DE7328984U - Leistungshalbleiterbauelement - Google Patents

Leistungshalbleiterbauelement

Info

Publication number
DE7328984U
DE7328984U DE19737328984U DE7328984U DE7328984U DE 7328984 U DE7328984 U DE 7328984U DE 19737328984 U DE19737328984 U DE 19737328984U DE 7328984 U DE7328984 U DE 7328984U DE 7328984 U DE7328984 U DE 7328984U
Authority
DE
Germany
Prior art keywords
power semiconductor
semiconductor component
zone
transitions
bevels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19737328984U
Other languages
German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CH987673A external-priority patent/CH560466A5/de
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of DE7328984U publication Critical patent/DE7328984U/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
DE19737328984U 1973-07-06 1973-08-08 Leistungshalbleiterbauelement Expired DE7328984U (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH987673A CH560466A5 (en) 1973-07-06 1973-07-06 Power semiconductor component with two opposite pn-junctions - has positive chamfers in surface junction region of 30 to 60 degs

Publications (1)

Publication Number Publication Date
DE7328984U true DE7328984U (de) 1975-05-15

Family

ID=4356542

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19737328984U Expired DE7328984U (de) 1973-07-06 1973-08-08 Leistungshalbleiterbauelement
DE19732340107 Granted DE2340107A1 (de) 1973-07-06 1973-08-08 Leistungshalbleiterbauelement

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19732340107 Granted DE2340107A1 (de) 1973-07-06 1973-08-08 Leistungshalbleiterbauelement

Country Status (7)

Country Link
US (1) US3987479A (en:Method)
JP (1) JPS5842626B2 (en:Method)
CA (1) CA1016269A (en:Method)
DE (2) DE7328984U (en:Method)
FR (1) FR2236273B1 (en:Method)
GB (1) GB1477179A (en:Method)
SE (1) SE419916B (en:Method)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
JPS5473583A (en) * 1977-11-24 1979-06-12 Hitachi Ltd High dielectric strength semiconductor device
DE3137695A1 (de) * 1981-09-22 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung
WO2000065661A1 (fr) * 1999-04-22 2000-11-02 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur
EP4006990B1 (en) * 2020-11-27 2023-04-05 Hitachi Energy Switzerland AG Semiconductor device with a side surface having different partial regions

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1259393A (fr) * 1960-02-13 1961-04-28 Dispositif à semi-conducteur dit tecnetron de puissance et procédé de fabrication
DE1250008B (en:Method) * 1961-04-22 1967-09-14
BE628619A (en:Method) * 1962-02-20
GB1052661A (en:Method) * 1963-01-30 1900-01-01
US3575644A (en) * 1963-01-30 1971-04-20 Gen Electric Semiconductor device with double positive bevel
SE323452B (en:Method) * 1964-05-15 1970-05-04 Asea Ab
NL6603372A (en:Method) * 1965-03-25 1966-09-26
GB1057214A (en) * 1965-05-11 1967-02-01 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
CH437538A (de) * 1965-12-22 1967-06-15 Bbc Brown Boveri & Cie Steuerbares Halbleiterelement
JPS4418910Y1 (en:Method) * 1966-11-07 1969-08-14
DE1764326A1 (de) * 1968-05-17 1971-07-01 Bbc Brown Boveri & Cie Verfahren zur Anbringung einer Hohlkehle an einem Halbleiterbauelement
GB1211627A (en) * 1968-08-06 1970-11-11 Westinghouse Brake & Signal Methods of manufacture of semiconductor elements and elements manufactured therby
US3588632A (en) * 1968-11-12 1971-06-28 Josuke Nakata Structurally reinforced semiconductor device
US3622724A (en) * 1970-02-24 1971-11-23 Gen Electric Vacuum-type circuit interrupter having contacts with improved arc-revolving means
US3742593A (en) * 1970-12-11 1973-07-03 Gen Electric Semiconductor device with positively beveled junctions and process for its manufacture
JPS4915669A (en:Method) * 1972-06-06 1974-02-12

Also Published As

Publication number Publication date
SE7408779L (en:Method) 1975-01-07
DE2340107A1 (de) 1975-01-23
CA1016269A (en) 1977-08-23
US3987479A (en) 1976-10-19
FR2236273A1 (en:Method) 1975-01-31
JPS5842626B2 (ja) 1983-09-21
DE2340107C2 (en:Method) 1991-03-14
JPS5039883A (en:Method) 1975-04-12
GB1477179A (en) 1977-06-22
SE419916B (sv) 1981-08-31
FR2236273B1 (en:Method) 1979-03-30

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