NL6603372A - - Google Patents

Info

Publication number
NL6603372A
NL6603372A NL6603372A NL6603372A NL6603372A NL 6603372 A NL6603372 A NL 6603372A NL 6603372 A NL6603372 A NL 6603372A NL 6603372 A NL6603372 A NL 6603372A NL 6603372 A NL6603372 A NL 6603372A
Authority
NL
Netherlands
Application number
NL6603372A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6603372A publication Critical patent/NL6603372A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
NL6603372A 1965-03-25 1966-03-15 NL6603372A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE384965 1965-03-25

Publications (1)

Publication Number Publication Date
NL6603372A true NL6603372A (en:Method) 1966-09-26

Family

ID=20262993

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6603372A NL6603372A (en:Method) 1965-03-25 1966-03-15

Country Status (5)

Country Link
US (1) US3437886A (en:Method)
CH (1) CH437539A (en:Method)
DE (1) DE1539636B1 (en:Method)
GB (1) GB1134019A (en:Method)
NL (1) NL6603372A (en:Method)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764326A1 (de) * 1968-05-17 1971-07-01 Bbc Brown Boveri & Cie Verfahren zur Anbringung einer Hohlkehle an einem Halbleiterbauelement
US3628106A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with protective peripheral junction portion
US3742593A (en) * 1970-12-11 1973-07-03 Gen Electric Semiconductor device with positively beveled junctions and process for its manufacture
US3943547A (en) * 1970-12-26 1976-03-09 Hitachi, Ltd. Semiconductor device
US3731159A (en) * 1971-05-19 1973-05-01 Anheuser Busch Microwave diode with low capacitance package
DE2340107A1 (de) * 1973-07-06 1975-01-23 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
DE2340128C3 (de) * 1973-08-08 1982-08-12 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement hoher Sperrfähigkeit
DE2358937C3 (de) * 1973-11-27 1976-07-15 Licentia Gmbh Thyristor fuer hochspannung im kilovoltbereich
JPS5624972A (en) * 1979-08-07 1981-03-10 Mitsubishi Electric Corp Thyristor
DE3137695A1 (de) * 1981-09-22 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung
DE102019105727B4 (de) * 2019-03-07 2020-10-15 Semikron Elektronik Gmbh & Co. Kg Thyristor oder Diode
EP4006990B1 (en) 2020-11-27 2023-04-05 Hitachi Energy Switzerland AG Semiconductor device with a side surface having different partial regions

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US3055776A (en) * 1960-12-12 1962-09-25 Pacific Semiconductors Inc Masking technique
BE628619A (en:Method) * 1962-02-20
GB1052661A (en:Method) * 1963-01-30 1900-01-01
GB1003654A (en) * 1964-04-24 1965-09-08 Standard Telephones Cables Ltd Semiconductor devices
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices

Also Published As

Publication number Publication date
US3437886A (en) 1969-04-08
GB1134019A (en) 1968-11-20
CH437539A (de) 1967-06-15
DE1539636B1 (de) 1971-01-14

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