DE69942327D1 - Siliziumeinkristall-integrierte Schaltkreise auf polykristallinem Silizium - Google Patents

Siliziumeinkristall-integrierte Schaltkreise auf polykristallinem Silizium

Info

Publication number
DE69942327D1
DE69942327D1 DE69942327T DE69942327T DE69942327D1 DE 69942327 D1 DE69942327 D1 DE 69942327D1 DE 69942327 T DE69942327 T DE 69942327T DE 69942327 T DE69942327 T DE 69942327T DE 69942327 D1 DE69942327 D1 DE 69942327D1
Authority
DE
Germany
Prior art keywords
silicon
single crystal
integrated circuits
crystal integrated
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69942327T
Other languages
English (en)
Inventor
George K Celler
Yves Jean Chabal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Application granted granted Critical
Publication of DE69942327D1 publication Critical patent/DE69942327D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
DE69942327T 1998-06-10 1999-05-26 Siliziumeinkristall-integrierte Schaltkreise auf polykristallinem Silizium Expired - Lifetime DE69942327D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/095,468 US6388290B1 (en) 1998-06-10 1998-06-10 Single crystal silicon on polycrystalline silicon integrated circuits

Publications (1)

Publication Number Publication Date
DE69942327D1 true DE69942327D1 (de) 2010-06-17

Family

ID=22252171

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69942327T Expired - Lifetime DE69942327D1 (de) 1998-06-10 1999-05-26 Siliziumeinkristall-integrierte Schaltkreise auf polykristallinem Silizium

Country Status (5)

Country Link
US (1) US6388290B1 (de)
EP (1) EP0969500B1 (de)
JP (1) JP3655497B2 (de)
KR (1) KR20000005952A (de)
DE (1) DE69942327D1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482725B1 (en) * 1999-08-18 2002-11-19 Advanced Micro Devices, Inc. Gate formation method for reduced poly-depletion and boron penetration
US6743697B2 (en) 2000-06-30 2004-06-01 Intel Corporation Thin silicon circuits and method for making the same
US20030234438A1 (en) * 2002-06-24 2003-12-25 Motorola, Inc. Integrated circuit structure for mixed-signal RF applications and circuits
US6743662B2 (en) * 2002-07-01 2004-06-01 Honeywell International, Inc. Silicon-on-insulator wafer for RF integrated circuit
US20040187767A1 (en) * 2002-10-24 2004-09-30 Intel Corporation Device and method for multicrystalline silicon wafers
US9741881B2 (en) * 2003-04-14 2017-08-22 S'tile Photovoltaic module including integrated photovoltaic cells
US7235461B2 (en) * 2003-04-29 2007-06-26 S.O.I.Tec Silicon On Insulator Technologies Method for bonding semiconductor structures together
FR2854493B1 (fr) * 2003-04-29 2005-08-19 Soitec Silicon On Insulator Traitement par brossage d'une plaquette semiconductrice avant collage
US20050045992A1 (en) * 2003-08-27 2005-03-03 Turley Alfred P. Bipolar/thin film SOI CMOS structure and method of making same
JP4497093B2 (ja) * 2003-08-28 2010-07-07 株式会社日立製作所 半導体装置及びその製造方法
US7259077B2 (en) * 2004-04-29 2007-08-21 Sychip Inc. Integrated passive devices
US7382056B2 (en) * 2004-04-29 2008-06-03 Sychip Inc. Integrated passive devices
US7560322B2 (en) * 2004-10-27 2009-07-14 Northrop Grumman Systems Corporation Method of making a semiconductor structure for high power semiconductor devices
US20070065964A1 (en) * 2005-09-22 2007-03-22 Yinon Degani Integrated passive devices
US7601271B2 (en) 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
JP2007173354A (ja) * 2005-12-20 2007-07-05 Shin Etsu Chem Co Ltd Ｓｏｉ基板およびｓｏｉ基板の製造方法
US20080122042A1 (en) * 2006-11-27 2008-05-29 Michael Goldstein Applications of polycrystalline wafers
FR2912839B1 (fr) * 2007-02-16 2009-05-15 Soitec Silicon On Insulator Amelioration de la qualite de l'interface de collage par nettoyage froid et collage a chaud
US7935607B2 (en) * 2007-04-09 2011-05-03 Freescale Semiconductor, Inc. Integrated passive device with a high resistivity substrate and method for forming the same
GB0716829D0 (en) * 2007-08-31 2007-10-10 Seereal Technologies Sa Holographic display
US20090236689A1 (en) * 2008-03-24 2009-09-24 Freescale Semiconductor, Inc. Integrated passive device and method with low cost substrate
US20100001355A1 (en) * 2008-07-07 2010-01-07 Honeywell International Inc. RF MEMS Switch
JP6278978B2 (ja) * 2013-01-23 2018-02-14 シーエスエムシー テクノロジーズ エフエイビー２ カンパニー リミテッド スクライビングスロットのストリップ幅を検査するための構造及び方法
JP2015088698A (ja) * 2013-11-01 2015-05-07 信越半導体株式会社 シリコンウェーハ及びその製造方法
FI130149B (en) * 2013-11-26 2023-03-15 Okmetic Oyj High Resistive Silicon Substrate with Reduced RF Loss for RF Integrated Passive Device
FR3029686A1 (fr) * 2014-12-08 2016-06-10 St Microelectronics Tours Sas Dispositif radiofrequence protege contre des surtensions
JP6527423B2 (ja) * 2015-08-11 2019-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179110A (ja) 1986-02-03 1987-08-06 Toshiba Corp 直接接着型半導体基板の製造方法
US5849627A (en) * 1990-02-07 1998-12-15 Harris Corporation Bonded wafer processing with oxidative bonding
CA2048339C (en) 1990-08-03 1997-11-25 Takao Yonehara Semiconductor member and process for preparing semiconductor member
US5449953A (en) * 1990-09-14 1995-09-12 Westinghouse Electric Corporation Monolithic microwave integrated circuit on high resistivity silicon
US5091330A (en) * 1990-12-28 1992-02-25 Motorola, Inc. Method of fabricating a dielectric isolated area
JPH0555359A (ja) 1991-08-29 1993-03-05 Fujitsu Ltd Ｓｏｉ型半導体基板およびその製造方法
JPH05152180A (ja) * 1991-11-26 1993-06-18 Hitachi Ltd 半導体装置及び製造方法
JPH0832038A (ja) * 1994-07-15 1996-02-02 Komatsu Electron Metals Co Ltd 貼り合わせｓｏｉ基板の製造方法および貼り合わせｓｏｉ基板
US5559359A (en) * 1994-07-29 1996-09-24 Reyes; Adolfo C. Microwave integrated circuit passive element structure and method for reducing signal propagation losses
JP3582890B2 (ja) * 1995-05-23 2004-10-27 株式会社日立製作所 半導体装置
US5773151A (en) 1995-06-30 1998-06-30 Harris Corporation Semi-insulating wafer
US5986331A (en) * 1996-05-30 1999-11-16 Philips Electronics North America Corp. Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate
US5736749A (en) * 1996-11-19 1998-04-07 Lucent Technologies Inc. Integrated circuit device with inductor incorporated therein
TW392392B (en) 1997-04-03 2000-06-01 Lucent Technologies Inc High frequency apparatus including a low loss substrate
US5934312A (en) * 1997-04-10 1999-08-10 Spillguard Development Llc Drop chute spill guard
JPH10335615A (ja) * 1997-05-22 1998-12-18 Harris Corp 半導体デバイスに関する改良

Also Published As

Publication number Publication date
EP0969500B1 (de) 2010-05-05
US6388290B1 (en) 2002-05-14
JP3655497B2 (ja) 2005-06-02
EP0969500A2 (de) 2000-01-05
JP2000036584A (ja) 2000-02-02
KR20000005952A (ko) 2000-01-25
EP0969500A3 (de) 2000-10-25

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