DE69940611D1 - Bearbeitungs-/reinigungsverfahren mit hilfe von hydroxyd-ionen in ultrareinem wasser - Google Patents

Bearbeitungs-/reinigungsverfahren mit hilfe von hydroxyd-ionen in ultrareinem wasser

Info

Publication number
DE69940611D1
DE69940611D1 DE69940611T DE69940611T DE69940611D1 DE 69940611 D1 DE69940611 D1 DE 69940611D1 DE 69940611 T DE69940611 T DE 69940611T DE 69940611 T DE69940611 T DE 69940611T DE 69940611 D1 DE69940611 D1 DE 69940611D1
Authority
DE
Germany
Prior art keywords
ultrareinate
iones
hydroxyde
machining
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69940611T
Other languages
English (en)
Inventor
Yuzo Mori
Toshio Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34759898A external-priority patent/JP3316461B2/ja
Priority claimed from JP34759998A external-priority patent/JP3635951B2/ja
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE69940611D1 publication Critical patent/DE69940611D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE69940611T 1998-12-07 1999-12-07 Bearbeitungs-/reinigungsverfahren mit hilfe von hydroxyd-ionen in ultrareinem wasser Expired - Lifetime DE69940611D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP34759898A JP3316461B2 (ja) 1998-12-07 1998-12-07 超純水中の水酸化物イオンによる加工方法
JP34759998A JP3635951B2 (ja) 1998-12-07 1998-12-07 超純水中の水酸化物イオンによる洗浄方法
PCT/JP1999/006829 WO2000034995A1 (fr) 1998-12-07 1999-12-07 Procede d'usinage/nettoyage avec des ions hydroxyde dans de l'eau ultrapure

Publications (1)

Publication Number Publication Date
DE69940611D1 true DE69940611D1 (de) 2009-04-30

Family

ID=26578556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940611T Expired - Lifetime DE69940611D1 (de) 1998-12-07 1999-12-07 Bearbeitungs-/reinigungsverfahren mit hilfe von hydroxyd-ionen in ultrareinem wasser

Country Status (4)

Country Link
US (1) US6652658B1 (de)
EP (1) EP1139400B1 (de)
DE (1) DE69940611D1 (de)
WO (1) WO2000034995A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001064799A (ja) * 1999-08-27 2001-03-13 Yuzo Mori 電解加工方法及び装置
EP1170083B1 (de) * 2000-07-05 2008-09-10 Ebara Corporation Verfahren und Vorrichtung zum elektrochemischen Bearbeiten
JP4141114B2 (ja) 2000-07-05 2008-08-27 株式会社荏原製作所 電解加工方法及び装置
CN1313648C (zh) * 2001-01-23 2007-05-02 株式会社荏原制作所 电化学加工方法及其设备
US7638030B2 (en) 2001-06-18 2009-12-29 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
JP4043234B2 (ja) * 2001-06-18 2008-02-06 株式会社荏原製作所 電解加工装置及び基板処理装置
TW592859B (en) * 2001-09-11 2004-06-21 Ebara Corp Electrolytic processing apparatus and method
TWI224531B (en) 2001-09-11 2004-12-01 Ebara Corp Substrate processing apparatus and method
JP2003113500A (ja) * 2001-10-03 2003-04-18 Toshiba Corp 電解研磨方法
EP1448811A4 (de) 2001-11-29 2008-10-01 Ebara Corp Verfahren und vorrichtung zur regeneration von ionenaustauschern und vorrichtung zur elektrolytischen verarbeitung
US20050051432A1 (en) * 2001-12-13 2005-03-10 Mitsuhiko Shirakashi Electrolytic processing apparatus and method
JP2003205428A (ja) * 2002-01-08 2003-07-22 Ebara Corp 電解加工装置及び方法
TWI277473B (en) * 2002-01-31 2007-04-01 Ebara Corp Electrolytic processing apparatus and method, fixing method, fixing structure for ion exchanging member
TWI275436B (en) 2002-01-31 2007-03-11 Ebara Corp Electrochemical machining device, and substrate processing apparatus and method
JPWO2003080898A1 (ja) * 2002-03-25 2005-07-28 株式会社荏原製作所 電解加工装置及び電解加工方法
KR20050004156A (ko) * 2002-05-17 2005-01-12 가부시키가이샤 에바라 세이사꾸쇼 기판처리장치 및 기판처리방법
JP3948377B2 (ja) * 2002-09-12 2007-07-25 株式会社豊田中央研究所 圧接型半導体装置
US20060091005A1 (en) * 2002-10-08 2006-05-04 Yasushi Toma Electolytic processing apparatus
WO2004033765A1 (en) * 2002-10-08 2004-04-22 Ebara Corporation Electrode for electrolytic processing
US20050183963A1 (en) * 2002-10-08 2005-08-25 Yuzo Mori Electrode for electrolytic processing
CN1723548A (zh) * 2003-06-16 2006-01-18 住友电气工业株式会社 加工氮化物半导体晶体表面的方法和由该方法得到的氮化物半导体晶体
CN100405555C (zh) * 2003-07-15 2008-07-23 株式会社荏原制作所 电解处理装置和电解处理方法
WO2005006425A1 (en) * 2003-07-15 2005-01-20 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
US7527723B2 (en) 2004-01-16 2009-05-05 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
DE102004038104A1 (de) * 2004-08-05 2006-02-23 Henkel Kgaa Verwendung von ortho-Phenylphenol und/oder dessen Derivaten zur Hemmung der asexuellen Vermehrung von Pilzen
EP2273200A1 (de) 2009-07-10 2011-01-12 Rational AG Gargerät mit Mehrfachwasseranschluss und automatischer Wasserwahl in Abhängigkeit eines Gar- oder Reinigungsprogramms
JP7312738B2 (ja) * 2020-12-11 2023-07-21 芝浦メカトロニクス株式会社 基板処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165923A (ja) * 1982-03-25 1983-10-01 Inoue Japax Res Inc 放電加工方法
US4599154A (en) * 1985-03-15 1986-07-08 Atlantic Richfield Company Electrically enhanced liquid jet processing
JPS63306630A (ja) * 1987-06-08 1988-12-14 Nec Corp 微粒子の除去方法
JPH0254800A (ja) * 1988-08-17 1990-02-23 Mitsubishi Electric Corp 半導体基板の洗浄方法および装置
KR100224929B1 (ko) 1995-07-12 1999-10-15 아베 아키라 습식처리방법 및 처리장치
JP3349299B2 (ja) * 1995-07-21 2002-11-20 アルプス電気株式会社 ウエット処理方法及び処理装置
JP3286539B2 (ja) * 1996-10-30 2002-05-27 信越半導体株式会社 洗浄装置および洗浄方法

Also Published As

Publication number Publication date
EP1139400A1 (de) 2001-10-04
US6652658B1 (en) 2003-11-25
WO2000034995A1 (fr) 2000-06-15
EP1139400A4 (de) 2007-01-10
EP1139400B1 (de) 2009-03-18

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Legal Events

Date Code Title Description
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