DE69940535D1 - Halbleiterbauelement und dessen Herstellungsverfahren - Google Patents

Halbleiterbauelement und dessen Herstellungsverfahren

Info

Publication number
DE69940535D1
DE69940535D1 DE69940535T DE69940535T DE69940535D1 DE 69940535 D1 DE69940535 D1 DE 69940535D1 DE 69940535 T DE69940535 T DE 69940535T DE 69940535 T DE69940535 T DE 69940535T DE 69940535 D1 DE69940535 D1 DE 69940535D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69940535T
Other languages
English (en)
Inventor
Hiroaki Ammo
Hiroyuki Miwa
Shigeru Kanematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69940535D1 publication Critical patent/DE69940535D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69940535T 1998-10-12 1999-10-11 Halbleiterbauelement und dessen Herstellungsverfahren Expired - Lifetime DE69940535D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10288984A JP2000124336A (ja) 1998-10-12 1998-10-12 半導体装置及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE69940535D1 true DE69940535D1 (de) 2009-04-23

Family

ID=17737343

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940535T Expired - Lifetime DE69940535D1 (de) 1998-10-12 1999-10-11 Halbleiterbauelement und dessen Herstellungsverfahren

Country Status (5)

Country Link
US (1) US6548873B2 (de)
EP (1) EP0994511B1 (de)
JP (1) JP2000124336A (de)
KR (1) KR100637825B1 (de)
DE (1) DE69940535D1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158304A (ja) * 2000-11-17 2002-05-31 Sanyo Electric Co Ltd 半導体集積回路装置およびその製造方法
SE0103036D0 (sv) 2001-05-04 2001-09-13 Ericsson Telefon Ab L M Semiconductor process and integrated circuit
JP4669246B2 (ja) * 2004-08-16 2011-04-13 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR200453755Y1 (ko) * 2010-09-02 2011-05-24 최영천 자동 또는 수동 변환식 밸런스 밸브를 갖는 압착식 도로 파쇄용 중장비의 파쇄장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4984200A (en) * 1987-11-30 1991-01-08 Hitachi, Ltd. Semiconductor circuit device having a plurality of SRAM type memory cell arrangement
JP2722506B2 (ja) * 1988-07-22 1998-03-04 ソニー株式会社 半導体装置及びその製造方法
JP3131982B2 (ja) 1990-08-21 2001-02-05 セイコーエプソン株式会社 半導体装置、半導体メモリ及び半導体装置の製造方法
DE69528683T2 (de) * 1994-04-15 2003-06-12 Kabushiki Kaisha Toshiba, Kawasaki Halbleiterbauteil und Verfahren zur Herstellung desselben
KR100204932B1 (ko) * 1996-11-20 1999-06-15 김충환 절연 게이트 바이폴라 트랜지스터
JP3700298B2 (ja) 1996-12-10 2005-09-28 ソニー株式会社 半導体装置およびその製造方法
FR2757683B1 (fr) 1996-12-20 1999-03-05 Sgs Thomson Microelectronics Transistor bipolaire et capacite
JPH10189752A (ja) 1996-12-27 1998-07-21 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2000124336A (ja) 2000-04-28
KR100637825B1 (ko) 2006-10-24
EP0994511A1 (de) 2000-04-19
US6548873B2 (en) 2003-04-15
US20020033509A1 (en) 2002-03-21
EP0994511B1 (de) 2009-03-11
KR20000028965A (ko) 2000-05-25

Similar Documents

Publication Publication Date Title
DE60045755D1 (de) Halbleiterbauelement und dessen Herstellungsverfahren
DE69935095D1 (de) Halbleiterbauelement und deren Herstellungsverfahren
DE69938767D1 (de) Halbleiterbauelement und dessen herstellungsverfahren, bauelementsubstrat, und elektronisches bauelement
DE69834561D1 (de) Halbleiteranordnung und herstellungsverfahren dafür
GB2359191B (en) Semiconductor device and method of manufacturing the same
DE60037057D1 (de) Halbleiterelement und Herstellungsverfahren dafür
DE69929456D1 (de) Nahfeldabtastkopf und herstellungsverfahren
DE69737588D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
SG74757A1 (en) Method of manufacturing semiconductor wafer method of using and utilizing the same
DE60045088D1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
DE69835941D1 (de) Lichtemittierender Halbleitervorrichtung und Herstellungsverfahren
DE69818185D1 (de) Halbleiterverpackung und deren Herstellungsmethode
SG100769A1 (en) Semiconductor device and method of manufacturing the same
DE60030931D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
EP1122769A4 (de) Halbleitervorrichtung und herstellungsverfahren
SG83189A1 (en) Semiconductor luminescent element and method of manufacturing the same
DE60020737D1 (de) Sic-einkristall und herstellungsverfahren dafür
DE69932686D1 (de) Halbleiterlichtstrahler und dessen Herstellungsverfahren
DE69941874D1 (de) Optielektronisches bauelement und herstellungsverfahren
DE69920640D1 (de) Nitrid-Halbleiterlaser und dessen Herstellungsverfahren
DE69936488D1 (de) Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
GB2336469B (en) Semiconductor device and manufacturing method of the same
GB2373635B (en) Semiconductor device and method of manufacturing the same
SG77707A1 (en) Semiconductor device and method for manufacturing the same
DE60210834D1 (de) Halbleiterbauelement und zugehöriges Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition