DE69938443D1 - Halbleiter-IGBT-Modul - Google Patents
Halbleiter-IGBT-ModulInfo
- Publication number
- DE69938443D1 DE69938443D1 DE69938443T DE69938443T DE69938443D1 DE 69938443 D1 DE69938443 D1 DE 69938443D1 DE 69938443 T DE69938443 T DE 69938443T DE 69938443 T DE69938443 T DE 69938443T DE 69938443 D1 DE69938443 D1 DE 69938443D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductors
- igbt module
- igbt
- module
- semiconductors igbt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21226298 | 1998-07-28 | ||
JP21226298A JP3494023B2 (ja) | 1998-07-28 | 1998-07-28 | 半導体装置および半導体装置の駆動方法並びに電力変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69938443D1 true DE69938443D1 (de) | 2008-05-15 |
DE69938443T2 DE69938443T2 (de) | 2009-07-02 |
Family
ID=16619676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69938443T Expired - Lifetime DE69938443T2 (de) | 1998-07-28 | 1999-07-21 | Halbleiter-IGBT-Modul |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0977271B1 (de) |
JP (1) | JP3494023B2 (de) |
DE (1) | DE69938443T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4788028B2 (ja) * | 2000-08-28 | 2011-10-05 | 富士電機株式会社 | 逆阻止型igbtを逆並列に接続した双方向igbt |
JP4843253B2 (ja) * | 2005-05-23 | 2011-12-21 | 株式会社東芝 | 電力用半導体装置 |
KR101335833B1 (ko) * | 2009-09-07 | 2013-12-03 | 도요타 지도샤(주) | 다이오드 영역과 igbt 영역을 갖는 반도체 기판을 구비하는 반도체 장치 |
JP6073092B2 (ja) * | 2012-09-07 | 2017-02-01 | 株式会社 日立パワーデバイス | ダイオード及び電力変換システム、並びにダイオードの製造方法 |
JP5932623B2 (ja) | 2012-12-05 | 2016-06-08 | 株式会社 日立パワーデバイス | 半導体装置およびそれを用いた電力変換装置 |
CN103065978B (zh) * | 2012-12-25 | 2015-04-08 | 佛山市蓝箭电子股份有限公司 | 一种igbt器件的复合装载连线方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5538058A (en) * | 1978-09-11 | 1980-03-17 | Toshiba Corp | Semiconductor device |
JPH0680820B2 (ja) * | 1989-10-16 | 1994-10-12 | 株式会社東芝 | 過電圧保護機能付半導体装置及びその製造方法 |
JP3074736B2 (ja) * | 1990-12-28 | 2000-08-07 | 富士電機株式会社 | 半導体装置 |
DE69507177T2 (de) * | 1994-02-18 | 1999-09-02 | Hitachi Ltd | Halbleiterbauelement mit mindestens einem IGBT und einer Diode |
JPH09121052A (ja) * | 1995-08-21 | 1997-05-06 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
-
1998
- 1998-07-28 JP JP21226298A patent/JP3494023B2/ja not_active Expired - Fee Related
-
1999
- 1999-07-21 DE DE69938443T patent/DE69938443T2/de not_active Expired - Lifetime
- 1999-07-21 EP EP99305767A patent/EP0977271B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0977271A2 (de) | 2000-02-02 |
DE69938443T2 (de) | 2009-07-02 |
JP2000049337A (ja) | 2000-02-18 |
EP0977271A3 (de) | 2001-02-28 |
EP0977271B1 (de) | 2008-04-02 |
JP3494023B2 (ja) | 2004-02-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |