DE69938443D1 - Halbleiter-IGBT-Modul - Google Patents

Halbleiter-IGBT-Modul

Info

Publication number
DE69938443D1
DE69938443D1 DE69938443T DE69938443T DE69938443D1 DE 69938443 D1 DE69938443 D1 DE 69938443D1 DE 69938443 T DE69938443 T DE 69938443T DE 69938443 T DE69938443 T DE 69938443T DE 69938443 D1 DE69938443 D1 DE 69938443D1
Authority
DE
Germany
Prior art keywords
semiconductors
igbt module
igbt
module
semiconductors igbt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69938443T
Other languages
English (en)
Other versions
DE69938443T2 (de
Inventor
Masahiro Nagasu
Hideo Kobayashi
Junichi Sakano
Mutsuhiro Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69938443D1 publication Critical patent/DE69938443D1/de
Publication of DE69938443T2 publication Critical patent/DE69938443T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
DE69938443T 1998-07-28 1999-07-21 Halbleiter-IGBT-Modul Expired - Lifetime DE69938443T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21226298 1998-07-28
JP21226298A JP3494023B2 (ja) 1998-07-28 1998-07-28 半導体装置および半導体装置の駆動方法並びに電力変換装置

Publications (2)

Publication Number Publication Date
DE69938443D1 true DE69938443D1 (de) 2008-05-15
DE69938443T2 DE69938443T2 (de) 2009-07-02

Family

ID=16619676

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69938443T Expired - Lifetime DE69938443T2 (de) 1998-07-28 1999-07-21 Halbleiter-IGBT-Modul

Country Status (3)

Country Link
EP (1) EP0977271B1 (de)
JP (1) JP3494023B2 (de)
DE (1) DE69938443T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4788028B2 (ja) * 2000-08-28 2011-10-05 富士電機株式会社 逆阻止型igbtを逆並列に接続した双方向igbt
JP4843253B2 (ja) * 2005-05-23 2011-12-21 株式会社東芝 電力用半導体装置
KR101335833B1 (ko) * 2009-09-07 2013-12-03 도요타 지도샤(주) 다이오드 영역과 igbt 영역을 갖는 반도체 기판을 구비하는 반도체 장치
JP6073092B2 (ja) * 2012-09-07 2017-02-01 株式会社 日立パワーデバイス ダイオード及び電力変換システム、並びにダイオードの製造方法
JP5932623B2 (ja) 2012-12-05 2016-06-08 株式会社 日立パワーデバイス 半導体装置およびそれを用いた電力変換装置
CN103065978B (zh) * 2012-12-25 2015-04-08 佛山市蓝箭电子股份有限公司 一种igbt器件的复合装载连线方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538058A (en) * 1978-09-11 1980-03-17 Toshiba Corp Semiconductor device
JPH0680820B2 (ja) * 1989-10-16 1994-10-12 株式会社東芝 過電圧保護機能付半導体装置及びその製造方法
JP3074736B2 (ja) * 1990-12-28 2000-08-07 富士電機株式会社 半導体装置
DE69507177T2 (de) * 1994-02-18 1999-09-02 Hitachi Ltd Halbleiterbauelement mit mindestens einem IGBT und einer Diode
JPH09121052A (ja) * 1995-08-21 1997-05-06 Fuji Electric Co Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP0977271A2 (de) 2000-02-02
DE69938443T2 (de) 2009-07-02
JP2000049337A (ja) 2000-02-18
EP0977271A3 (de) 2001-02-28
EP0977271B1 (de) 2008-04-02
JP3494023B2 (ja) 2004-02-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition