DE69938381D1 - Herstellung einer LDD Struktur für eine Schutzschaltung gegen elektrostatische Entladungen (ESD) - Google Patents

Herstellung einer LDD Struktur für eine Schutzschaltung gegen elektrostatische Entladungen (ESD)

Info

Publication number
DE69938381D1
DE69938381D1 DE69938381T DE69938381T DE69938381D1 DE 69938381 D1 DE69938381 D1 DE 69938381D1 DE 69938381 T DE69938381 T DE 69938381T DE 69938381 T DE69938381 T DE 69938381T DE 69938381 D1 DE69938381 D1 DE 69938381D1
Authority
DE
Germany
Prior art keywords
esd
preparation
protection circuit
electrostatic discharge
discharge protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69938381T
Other languages
English (en)
Other versions
DE69938381T2 (de
Inventor
Ronald B Hulfachor
Steven Leibiger
Michael Harley-Stead
Daniel J Hahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of DE69938381D1 publication Critical patent/DE69938381D1/de
Application granted granted Critical
Publication of DE69938381T2 publication Critical patent/DE69938381T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69938381T 1998-09-25 1999-09-21 Herstellung einer LDD Struktur für eine Schutzschaltung gegen elektrostatische Entladungen (ESD) Expired - Lifetime DE69938381T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/161,354 US6100125A (en) 1998-09-25 1998-09-25 LDD structure for ESD protection and method of fabrication
US161354 1998-09-25

Publications (2)

Publication Number Publication Date
DE69938381D1 true DE69938381D1 (de) 2008-04-30
DE69938381T2 DE69938381T2 (de) 2009-04-23

Family

ID=22580856

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69938381T Expired - Lifetime DE69938381T2 (de) 1998-09-25 1999-09-21 Herstellung einer LDD Struktur für eine Schutzschaltung gegen elektrostatische Entladungen (ESD)

Country Status (4)

Country Link
US (1) US6100125A (de)
EP (1) EP0994510B1 (de)
KR (1) KR100314895B1 (de)
DE (1) DE69938381T2 (de)

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US6277682B1 (en) * 1998-08-25 2001-08-21 Texas Instruments Incorporated Source drain implant process for mixed voltage CMOS devices
US6660603B2 (en) * 2000-09-21 2003-12-09 Texas Instruments Incorporated Higher voltage drain extended MOS transistors with self-aligned channel and drain extensions
US6730967B2 (en) * 2001-05-24 2004-05-04 Winbond Electronics Corp. Electrostatic discharge protection devices and methods for the formation thereof
US6504196B1 (en) * 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
JP2003133433A (ja) * 2001-10-25 2003-05-09 Toshiba Corp 半導体装置およびその製造方法
US6610585B1 (en) * 2002-02-26 2003-08-26 International Business Machines Corporation Method for forming a retrograde implant
US6830966B2 (en) * 2002-06-12 2004-12-14 Chartered Semiconductor Manufacturing Ltd. Fully silicided NMOS device for electrostatic discharge protection
US7224560B2 (en) * 2003-02-13 2007-05-29 Medtronic, Inc. Destructive electrical transient protection
JP2005109389A (ja) * 2003-10-02 2005-04-21 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR100532204B1 (ko) * 2004-03-04 2005-11-29 삼성전자주식회사 핀형 트랜지스터 및 이의 제조 방법
US20060097292A1 (en) * 2004-10-29 2006-05-11 Kabushiki Kaisha Toshiba Semiconductor device
JP2006165481A (ja) * 2004-12-10 2006-06-22 Toshiba Corp 半導体装置
US20060138597A1 (en) * 2004-12-24 2006-06-29 Johnson David A Combined high reliability contact metal/ ballast resistor/ bypass capacitor structure for power transistors
US7508038B1 (en) 2005-04-29 2009-03-24 Zilog, Inc. ESD protection transistor
US8354710B2 (en) 2008-08-08 2013-01-15 Infineon Technologies Ag Field-effect device and manufacturing method thereof
JP2011071329A (ja) * 2009-09-25 2011-04-07 Seiko Instruments Inc 半導体装置
US8610217B2 (en) * 2010-12-14 2013-12-17 International Business Machines Corporation Self-protected electrostatic discharge field effect transistor (SPESDFET), an integrated circuit incorporating the SPESDFET as an input/output (I/O) pad driver and associated methods of forming the SPESDFET and the integrated circuit
US8536648B2 (en) 2011-02-03 2013-09-17 Infineon Technologies Ag Drain extended field effect transistors and methods of formation thereof
US8569171B2 (en) * 2011-07-01 2013-10-29 Globalfoundries Inc. Mask-based silicidation for FEOL defectivity reduction and yield boost
US9159802B2 (en) 2012-05-14 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. MOS devices with mask layers and methods for forming the same
US9035380B2 (en) * 2012-11-27 2015-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage drain-extended MOSFET having extra drain-OD addition

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US4602267A (en) * 1981-02-17 1986-07-22 Fujitsu Limited Protection element for semiconductor device
US5389809A (en) * 1982-02-01 1995-02-14 Texas Instruments Incorporated Silicided MOS transistor
US4672419A (en) * 1984-06-25 1987-06-09 Texas Instruments Incorporated Metal gate, interconnect and contact system for VLSI devices
DE3728849C2 (de) * 1986-08-29 1995-07-13 Toshiba Kawasaki Kk MIS (Metallisolatorhalbleiter)-Halbleitervorrichtung und Verfahren zur Herstellung derselben
US5243212A (en) * 1987-12-22 1993-09-07 Siliconix Incorporated Transistor with a charge induced drain extension
US5208472A (en) * 1988-05-13 1993-05-04 Industrial Technology Research Institute Double spacer salicide MOS device and method
US4949136A (en) * 1988-06-09 1990-08-14 University Of Connecticut Submicron lightly doped field effect transistors
US5055896A (en) * 1988-12-15 1991-10-08 Siliconix Incorporated Self-aligned LDD lateral DMOS transistor with high-voltage interconnect capability
US5132753A (en) * 1990-03-23 1992-07-21 Siliconix Incorporated Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs
US5262344A (en) * 1990-04-27 1993-11-16 Digital Equipment Corporation N-channel clamp for ESD protection in self-aligned silicided CMOS process
DE69032937T2 (de) * 1990-07-24 1999-06-17 St Microelectronics Srl Verfahren zur Herstellung einer N-Kanal-EPROM-Zelle mit einer einzigen Polysiliziumschicht
US5091763A (en) * 1990-12-19 1992-02-25 Intel Corporation Self-aligned overlap MOSFET and method of fabrication
US5338960A (en) * 1992-08-05 1994-08-16 Harris Corporation Formation of dual polarity source/drain extensions in lateral complementary channel MOS architectures
WO1994005042A1 (en) * 1992-08-14 1994-03-03 International Business Machines Corporation Mos device having protection against electrostatic discharge
US5838033A (en) * 1993-09-08 1998-11-17 Lucent Technologies Inc. Integrated circuit with gate conductor defined resistor
US5498892A (en) * 1993-09-29 1996-03-12 Ncr Corporation Lightly doped drain ballast resistor
KR100320354B1 (ko) * 1994-01-12 2002-06-24 쥴리 와이. 마-스피놀라 최적화된정전방전보호성능을갖는입력/출력트랜지스터
DE4423591C2 (de) * 1994-07-06 1996-08-29 Itt Ind Gmbh Deutsche Schutzstruktur für integrierte Schaltungen
US5440162A (en) * 1994-07-26 1995-08-08 Rockwell International Corporation ESD protection for submicron CMOS circuits
EP0700089A1 (de) * 1994-08-19 1996-03-06 STMicroelectronics S.r.l. Schutzanordnung gegen elektrostatische Entladungen an den Eingangs-/Ausgangsanschlüssen einer integrierten MOS-Schaltung
US5472894A (en) * 1994-08-23 1995-12-05 United Microelectronics Corp. Method of fabricating lightly doped drain transistor device
US5517049A (en) * 1994-09-30 1996-05-14 Vlsi Technology, Inc. CMOS output buffer with enhanced ESD resistance
US5654860A (en) * 1995-08-16 1997-08-05 Micron Technology, Inc. Well resistor for ESD protection of CMOS circuits
US5637902A (en) * 1996-01-16 1997-06-10 Vlsi Technology, Inc. N-well resistor as a ballast resistor for output MOSFET
US5705441A (en) * 1996-03-19 1998-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Ion implant silicon nitride mask for a silicide free contact region in a self aligned silicide process

Also Published As

Publication number Publication date
KR20000023373A (ko) 2000-04-25
DE69938381T2 (de) 2009-04-23
EP0994510A2 (de) 2000-04-19
US6100125A (en) 2000-08-08
EP0994510A3 (de) 2003-03-26
KR100314895B1 (ko) 2001-11-23
EP0994510B1 (de) 2008-03-19

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