DE69935371D1 - Halbleiterphotodetektor mit erhöhter lichtempfänglicher Oberfläche und Hochgeschwindigkeitsleistung - Google Patents

Halbleiterphotodetektor mit erhöhter lichtempfänglicher Oberfläche und Hochgeschwindigkeitsleistung

Info

Publication number
DE69935371D1
DE69935371D1 DE69935371T DE69935371T DE69935371D1 DE 69935371 D1 DE69935371 D1 DE 69935371D1 DE 69935371 T DE69935371 T DE 69935371T DE 69935371 T DE69935371 T DE 69935371T DE 69935371 D1 DE69935371 D1 DE 69935371D1
Authority
DE
Germany
Prior art keywords
sensitive surface
speed performance
increased light
semiconductor photodetector
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69935371T
Other languages
English (en)
Other versions
DE69935371T2 (de
Inventor
Atsuhiko Kusakabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Application granted granted Critical
Publication of DE69935371D1 publication Critical patent/DE69935371D1/de
Publication of DE69935371T2 publication Critical patent/DE69935371T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
DE69935371T 1998-06-15 1999-06-15 Halbleiterphotodetektor mit erhöhter lichtempfänglicher Oberfläche und Hochgeschwindigkeitsleistung Expired - Lifetime DE69935371T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16667698A JP3555924B2 (ja) 1998-06-15 1998-06-15 半導体受光素子
JP16667698 1998-06-15

Publications (2)

Publication Number Publication Date
DE69935371D1 true DE69935371D1 (de) 2007-04-19
DE69935371T2 DE69935371T2 (de) 2007-11-15

Family

ID=15835670

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69935371T Expired - Lifetime DE69935371T2 (de) 1998-06-15 1999-06-15 Halbleiterphotodetektor mit erhöhter lichtempfänglicher Oberfläche und Hochgeschwindigkeitsleistung

Country Status (4)

Country Link
US (1) US6271546B1 (de)
EP (1) EP0966046B1 (de)
JP (1) JP3555924B2 (de)
DE (1) DE69935371T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4920879B2 (ja) 2004-08-06 2012-04-18 キヤノン株式会社 画像処理装置及びデータ処理装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130085A (ja) 1984-07-20 1986-02-12 Nec Corp 光伝導検出素子
JPS6330821A (ja) 1986-07-25 1988-02-09 Nippon Telegr & Teleph Corp <Ntt> 光変調器およびその製造方法
JPH02144983A (ja) 1988-11-25 1990-06-04 Agency Of Ind Science & Technol 複数の活性層を有する半導体レーザ装置
JP2933099B2 (ja) 1991-02-25 1999-08-09 日本電信電話株式会社 半導体導波路型受光素子
US5637883A (en) * 1995-02-27 1997-06-10 The United States Of America As Represented By The Secretary Of The Navy Optically addressed spatial light modulator using an intrinsic semiconductor active material and high resistivity cladding layers
FR2741483B1 (fr) * 1995-11-21 1998-01-02 Thomson Csf Dispositif optoelectronique a puits quantiques
JPH1090540A (ja) 1996-09-17 1998-04-10 Hitachi Ltd 半導体受光素子、半導体受光装置および半導体装置
US6075254A (en) * 1998-02-06 2000-06-13 The United States Of America As Represented By The Secretary Of The Army Polarization insensitive/independent semiconductor waveguide modulator using tensile stressors

Also Published As

Publication number Publication date
EP0966046B1 (de) 2007-03-07
DE69935371T2 (de) 2007-11-15
EP0966046A3 (de) 2000-02-02
JP2000004041A (ja) 2000-01-07
US6271546B1 (en) 2001-08-07
JP3555924B2 (ja) 2004-08-18
EP0966046A2 (de) 1999-12-22

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