DE69934494T2 - Infrarot-durchsichtiges deckelement für einen thermischen reaktor - Google Patents

Infrarot-durchsichtiges deckelement für einen thermischen reaktor Download PDF

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Publication number
DE69934494T2
DE69934494T2 DE69934494T DE69934494T DE69934494T2 DE 69934494 T2 DE69934494 T2 DE 69934494T2 DE 69934494 T DE69934494 T DE 69934494T DE 69934494 T DE69934494 T DE 69934494T DE 69934494 T2 DE69934494 T2 DE 69934494T2
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DE
Germany
Prior art keywords
central window
flange
window part
flange portion
curvature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69934494T
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German (de)
English (en)
Other versions
DE69934494D1 (de
Inventor
Roger N. San Jose Anderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69934494D1 publication Critical patent/DE69934494D1/de
Application granted granted Critical
Publication of DE69934494T2 publication Critical patent/DE69934494T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
DE69934494T 1998-07-23 1999-07-21 Infrarot-durchsichtiges deckelement für einen thermischen reaktor Expired - Fee Related DE69934494T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/122,620 US6406543B1 (en) 1998-07-23 1998-07-23 Infra-red transparent thermal reactor cover member
US122620 1998-07-23
PCT/US1999/016583 WO2000005753A1 (en) 1998-07-23 1999-07-21 Infra-red transparent thermal reactor cover member

Publications (2)

Publication Number Publication Date
DE69934494D1 DE69934494D1 (de) 2007-02-01
DE69934494T2 true DE69934494T2 (de) 2007-04-19

Family

ID=22403789

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69934494T Expired - Fee Related DE69934494T2 (de) 1998-07-23 1999-07-21 Infrarot-durchsichtiges deckelement für einen thermischen reaktor

Country Status (5)

Country Link
US (1) US6406543B1 (enExample)
EP (1) EP1097470B1 (enExample)
JP (1) JP2002521817A (enExample)
DE (1) DE69934494T2 (enExample)
WO (1) WO2000005753A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003022982A (ja) * 2001-07-09 2003-01-24 Tokyo Electron Ltd 熱処理装置
US7763548B2 (en) 2003-08-06 2010-07-27 Micron Technology, Inc. Microfeature workpiece processing system for, e.g., semiconductor wafer analysis
JP5169298B2 (ja) * 2008-02-22 2013-03-27 株式会社デンソー 半導体製造装置
JP5110649B2 (ja) * 2008-04-22 2012-12-26 株式会社Ｓｕｍｃｏ 半導体製造装置
DE102008034260B4 (de) * 2008-07-16 2014-06-26 Siltronic Ag Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD in einer Kammer und Kammer zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD
CN103337453B (zh) * 2008-10-07 2017-10-24 应用材料公司 用于从蚀刻基板有效地移除卤素残余物的设备
US8950470B2 (en) 2010-12-30 2015-02-10 Poole Ventura, Inc. Thermal diffusion chamber control device and method
US8097085B2 (en) * 2011-01-28 2012-01-17 Poole Ventura, Inc. Thermal diffusion chamber
US20140083360A1 (en) * 2012-09-26 2014-03-27 Applied Materials, Inc. Process chamber having more uniform gas flow
US9768043B2 (en) * 2013-01-16 2017-09-19 Applied Materials, Inc. Quartz upper and lower domes
US9322097B2 (en) * 2013-03-13 2016-04-26 Applied Materials, Inc. EPI base ring
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
JP6749954B2 (ja) * 2018-02-20 2020-09-02 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム
JP7717717B2 (ja) * 2020-04-01 2025-08-04 ラム リサーチ コーポレーション 熱エッチングのための急速かつ正確な温度制御
JP7038770B2 (ja) * 2020-08-12 2022-03-18 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、プログラム
US12134835B2 (en) 2021-09-01 2024-11-05 Applied Materials, Inc. Quartz susceptor for accurate non-contact temperature measurement

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920918A (en) 1989-04-18 1990-05-01 Applied Materials, Inc. Pressure-resistant thermal reactor system for semiconductor processing
US5194401A (en) 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
US5108792A (en) 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
US5085887A (en) 1990-09-07 1992-02-04 Applied Materials, Inc. Wafer reactor vessel window with pressure-thermal compensation
JPH05267228A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd 有磁場マイクロ波プラズマ処理装置
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5551982A (en) * 1994-03-31 1996-09-03 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
FR2763964B1 (fr) 1997-05-28 1999-08-13 Sgs Thomson Microelectronics Amelioration du flux gazeux dans un reacteur d'epitaxie
US6099648A (en) 1997-08-06 2000-08-08 Applied Materials, Inc. Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
US5916370A (en) 1998-06-12 1999-06-29 Applied Materials, Inc. Semiconductor processing chamber having diamond coated components

Also Published As

Publication number Publication date
WO2000005753A1 (en) 2000-02-03
US20020046704A1 (en) 2002-04-25
DE69934494D1 (de) 2007-02-01
EP1097470B1 (en) 2006-12-20
JP2002521817A (ja) 2002-07-16
EP1097470A1 (en) 2001-05-09
US6406543B1 (en) 2002-06-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee