WO2000005753A1 - Infra-red transparent thermal reactor cover member - Google Patents

Infra-red transparent thermal reactor cover member Download PDF

Info

Publication number
WO2000005753A1
WO2000005753A1 PCT/US1999/016583 US9916583W WO0005753A1 WO 2000005753 A1 WO2000005753 A1 WO 2000005753A1 US 9916583 W US9916583 W US 9916583W WO 0005753 A1 WO0005753 A1 WO 0005753A1
Authority
WO
WIPO (PCT)
Prior art keywords
cover member
window portion
central window
flange
flange portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1999/016583
Other languages
English (en)
French (fr)
Inventor
Roger N. Anderson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP99935833A priority Critical patent/EP1097470B1/en
Priority to DE69934494T priority patent/DE69934494T2/de
Priority to JP2000561650A priority patent/JP2002521817A/ja
Publication of WO2000005753A1 publication Critical patent/WO2000005753A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Definitions

  • the present invention relates to thermal reactors for processing semiconductor wafers, and more particularly to a reactor having a domed window with the center of mass equally distributed within the flange portion of the window.
  • the process of depositing layers on a semiconductor wafer usually involves placing the substrate within a thermal reactor chamber and holding the wafer within a stream of a reactant gas flowing across the surface of a wafer.
  • the thermal reactor is heated by external lamps which pass infra-red radiation into the reactor chamber through upper and lower heating ports.
  • the heating ports are covered by infrared transparent cover members.
  • the upper cover member is generally characterized by a central window portion and a flange portion.
  • the flange portion serves to support the central window portion in the thermal reactor.
  • a cover member for a semiconductor processing thermal reactor has a central quartz window portion and an outer flange portion.
  • the central window portion has either an inward bow defining a concave outside surface, or an outward bow defining a convex outside surface.
  • the centerline of the central window portion has a radius of curvature which when extended through the flange portion divides the flange portion into an upper flange section and a lower flange section.
  • the upper and lower flange portions having substantially equal masses.
  • Figure 1A is a cross-sectional view of a thermal reactor in one embodiment of the present invention.
  • Figure 1 B is a cross-sectional view of the infra-red transparent cover member of Figure 1 A.
  • Figure 1C is an enlarged view of the flange portion of the cover member shown in Figure 1 B.
  • Figure 2A is a thermal reactor cover member in another embodiment of the present invention.
  • Figure 2B is an enlarged view of the flange portion of the cover ⁇ member shown in Figure 2A.
  • a quartz window for a thermal reactor is disclosed.
  • numerous specific details are set forth, such as material types, dimensions, etc., in order to provide a thorough understanding of the present invention. However, it will be obvious to one of ordinary skill in the art that the invention may be practiced without these specific details. In other instances, well-known structures and processing steps have not been shown in particular detail in order to avoid unnecessarily obscuring the present invention.
  • Thermal reactor 100 is formed by a reactor vessel 102 defining a wafer reactor chamber 104.
  • Chamber 102 is defined, in part, by a cover member 106 mounted below an upper heating source 108, and a lower member 110 mounted above a lower heating source 112.
  • Cover member 106 and lower member 110 are generally made of quartz. Heating sources 108 and 112 provide infra-red radiant heat into the chamber through members 106 and 110 which are transparent to infra-red radiation.
  • Cover member 106 includes a central window portion 114 and a peripheral flange portion 116 for supporting the central window portion.
  • the window portion 106 generally has a spherical shape.
  • flange portion 116 generally has a circular shape.
  • Central window portion 114 is typically made of a clear fused silica quartz whereas the flange portion is made of an opaque quartz.
  • the flange is captured between a baseplate 118 and an upper clamp ring 120.
  • Clamp ring 120 is secured to baseplate 118 by a suitable clamping means such as locking bolts 122.
  • cover member 116 may be made entirely of a single material, such as fused silica quartz.
  • the present invention is not — limited to the manner in which the cover member is attached to the reactor housing.
  • central window portion 114 has an outward bow that forms a convex outside surface.
  • the central window portion 114 has a centerline 160 having a curvature of radius.
  • the centerline 160 divides the flange portion into an upper flange section 170 and a lower flange section 172.
  • the geometry's of central window portion 114 and flange portion 116 are configured such that the upper flange section 170 and the lower flange section 172 of flange portion 116 have substantially the same mass and/or cross-sectional area.
  • Cover member 106 is resiliently supported by a cushioning material such as base sealing rings 124 that are positioned between baseplate 118 and flange 116. Cover member 106 is further supported by clamp sealing o-rings 126 that are located between clamp ring 120 and flange 116. The o-rings are preloaded by the locking bolts 122 to provide a double seal for preventing the processing gas within chamber 104 from escaping into the ambient atmosphere.
  • Lower member 110 also has a window portion 128 and a flange portion 130 that is similarly mounted between baseplate 118 and a lower clamp ring 132 with locking bolts 134 and o-rings 136 and 138.
  • Process gas enters chamber 104 through a gas inlet port 140 and exits the chamber through an exit port 142.
  • the pressure of the gas within the chamber is maintained by metering the gas flow out of exit port 142.
  • a susceptor 144 is provided within chamber 104 for supporting a wafer 146.
  • Susceptor 144 includes a mounting shaft 148 that is coupled to a motor (not shown). In this manner, wafer 148 may be rotated during processing to permit a more uniform heating and deposition.
  • a - salient feature of the present invention lies in the construction of the cover member 106.
  • the domed or bowed configuration of central window portion 114 causes the stress within central window portion 114 to be transmitted into the flange portion 116.
  • the flange portion thus acts to resist the outward expansion of the domed cover member 106 due to a pressure differential across the cover and/or the thermal expansion due to heating of central window portion 114.
  • the upper flange section 170 and lower flange section 172 have substantially the same mass and/or cross-sectional area, the resisting force within flange portion 116 is equally distributed between the upper and lower flange sections.
  • the diameter of window portion 114 may vary significantly from one thermal reactor to another.
  • window portion 114 has a diameter of 17.5 inches and a radius of curvature of 35 inches. Depending upon the specific application, the radius of curvature typically is in the range of 15 to 100 inches.
  • the thickness of central window portion 114 is generally between of 0.1 to 0.2 inches.
  • the thickness of flange portion 116 is in the range of 0.5 to 1.5 inches.
  • Flange dimensions "A” and “B” are approximately 3.0 and 1.6 inches, respectively.
  • Flange dimension "A” may vary between 2.0 and 3.5 inches.
  • Flange dimension "B” may vary between 0.75 to 2.0 inches.
  • Cover member 206 includes a central window portion 214 and a flange portion 216.
  • the central window portion 214 has an inward bow that forms a concave outside surface. Cover member 206 is typically used in ambient pressure or above-ambient pressure thermal reactors.
  • the central window portion 214 has a — centerline 260 having a curvature of radius. When extended through the flange portion 216 of cover member 206, the centerline 260 divides the flange portion 216 into an upper flange section 270 and a lower flange section 272.
  • central window portion 214 and flange portion 216 are configured such that the upper flange section 270 and the lower flange section 272 of flange portion 216 have substantially the same mass and/or cross-sectional area. As previously discussed, since the upper and lower flange sections have substantially the same mass and/or cross-sectional area, the resisting force within flange portion 216 is equally distributed between the upper and lower flange sections.
  • window portion 214 has a diameter of 17.5 inches.
  • the radius of curvature of central window portion 114 is relatively large. In one embodiment, window portion 114 has a radius of curvature of 100 inches. Depending upon the specific application, the radius of curvature typically is in the range of 50 to 300 inches.
  • the thickness of central window portion 114 is generally between of 0.1 to 0.2 inches.
  • the thickness of flange portion 116 is in the range of 0.5 to 1.5 inches.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
PCT/US1999/016583 1998-07-23 1999-07-21 Infra-red transparent thermal reactor cover member Ceased WO2000005753A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP99935833A EP1097470B1 (en) 1998-07-23 1999-07-21 Infra-red transparent thermal reactor cover member
DE69934494T DE69934494T2 (de) 1998-07-23 1999-07-21 Infrarot-durchsichtiges deckelement für einen thermischen reaktor
JP2000561650A JP2002521817A (ja) 1998-07-23 1999-07-21 赤外線透過性熱リアクタカバー部材

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/122,620 US6406543B1 (en) 1998-07-23 1998-07-23 Infra-red transparent thermal reactor cover member
US09/122,620 1998-07-23

Publications (1)

Publication Number Publication Date
WO2000005753A1 true WO2000005753A1 (en) 2000-02-03

Family

ID=22403789

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/016583 Ceased WO2000005753A1 (en) 1998-07-23 1999-07-21 Infra-red transparent thermal reactor cover member

Country Status (5)

Country Link
US (1) US6406543B1 (enExample)
EP (1) EP1097470B1 (enExample)
JP (1) JP2002521817A (enExample)
DE (1) DE69934494T2 (enExample)
WO (1) WO2000005753A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7763548B2 (en) 2003-08-06 2010-07-27 Micron Technology, Inc. Microfeature workpiece processing system for, e.g., semiconductor wafer analysis

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003022982A (ja) * 2001-07-09 2003-01-24 Tokyo Electron Ltd 熱処理装置
JP5169298B2 (ja) * 2008-02-22 2013-03-27 株式会社デンソー 半導体製造装置
JP5110649B2 (ja) * 2008-04-22 2012-12-26 株式会社Ｓｕｍｃｏ 半導体製造装置
DE102008034260B4 (de) * 2008-07-16 2014-06-26 Siltronic Ag Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD in einer Kammer und Kammer zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD
CN103337453B (zh) * 2008-10-07 2017-10-24 应用材料公司 用于从蚀刻基板有效地移除卤素残余物的设备
US8950470B2 (en) 2010-12-30 2015-02-10 Poole Ventura, Inc. Thermal diffusion chamber control device and method
US8097085B2 (en) * 2011-01-28 2012-01-17 Poole Ventura, Inc. Thermal diffusion chamber
US20140083360A1 (en) * 2012-09-26 2014-03-27 Applied Materials, Inc. Process chamber having more uniform gas flow
US9768043B2 (en) * 2013-01-16 2017-09-19 Applied Materials, Inc. Quartz upper and lower domes
US9322097B2 (en) * 2013-03-13 2016-04-26 Applied Materials, Inc. EPI base ring
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
JP6749954B2 (ja) * 2018-02-20 2020-09-02 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム
JP7717717B2 (ja) * 2020-04-01 2025-08-04 ラム リサーチ コーポレーション 熱エッチングのための急速かつ正確な温度制御
JP7038770B2 (ja) * 2020-08-12 2022-03-18 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、プログラム
US12134835B2 (en) 2021-09-01 2024-11-05 Applied Materials, Inc. Quartz susceptor for accurate non-contact temperature measurement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0474251A1 (en) * 1990-09-07 1992-03-11 Applied Materials, Inc. Thermal reactor for processing semiconductor wafers and a method of operating such a reactor
EP0675524A1 (en) * 1994-03-31 1995-10-04 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
FR2763964A1 (fr) * 1997-05-28 1998-12-04 Sgs Thomson Microelectronics Amelioration du flux gazeux dans un reacteur d'epitaxie
WO1999007925A1 (en) * 1997-08-06 1999-02-18 Applied Materials, Inc. Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
US5916370A (en) * 1998-06-12 1999-06-29 Applied Materials, Inc. Semiconductor processing chamber having diamond coated components

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920918A (en) 1989-04-18 1990-05-01 Applied Materials, Inc. Pressure-resistant thermal reactor system for semiconductor processing
US5194401A (en) 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
US5108792A (en) 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
JPH05267228A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd 有磁場マイクロ波プラズマ処理装置
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0474251A1 (en) * 1990-09-07 1992-03-11 Applied Materials, Inc. Thermal reactor for processing semiconductor wafers and a method of operating such a reactor
EP0675524A1 (en) * 1994-03-31 1995-10-04 Applied Materials, Inc. Semiconductor wafer process chamber with susceptor back coating
FR2763964A1 (fr) * 1997-05-28 1998-12-04 Sgs Thomson Microelectronics Amelioration du flux gazeux dans un reacteur d'epitaxie
WO1999007925A1 (en) * 1997-08-06 1999-02-18 Applied Materials, Inc. Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
US5916370A (en) * 1998-06-12 1999-06-29 Applied Materials, Inc. Semiconductor processing chamber having diamond coated components

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7763548B2 (en) 2003-08-06 2010-07-27 Micron Technology, Inc. Microfeature workpiece processing system for, e.g., semiconductor wafer analysis
US8765000B2 (en) 2003-08-06 2014-07-01 Micron Technology, Inc. Microfeature workpiece processing system for, e.g., semiconductor wafer analysis

Also Published As

Publication number Publication date
US20020046704A1 (en) 2002-04-25
DE69934494D1 (de) 2007-02-01
DE69934494T2 (de) 2007-04-19
EP1097470B1 (en) 2006-12-20
JP2002521817A (ja) 2002-07-16
EP1097470A1 (en) 2001-05-09
US6406543B1 (en) 2002-06-18

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