US20020046704A1 - Infra-red transparent thermal reactor cover member - Google Patents
Infra-red transparent thermal reactor cover member Download PDFInfo
- Publication number
- US20020046704A1 US20020046704A1 US09/122,620 US12262098A US2002046704A1 US 20020046704 A1 US20020046704 A1 US 20020046704A1 US 12262098 A US12262098 A US 12262098A US 2002046704 A1 US2002046704 A1 US 2002046704A1
- Authority
- US
- United States
- Prior art keywords
- cover member
- window portion
- central window
- flange
- flange portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000010453 quartz Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000005350 fused silica glass Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
Definitions
- the present invention relates to thermal reactors for processing semiconductor wafers, and more particularly to a reactor having a domed window with the center of mass equally distributed within the flange portion of the window.
- the process of depositing layers on a semiconductor wafer usually involves placing the substrate within a thermal reactor chamber and holding the wafer within a stream of a reactant gas flowing across the surface of a wafer.
- the thermal reactor is heated by external lamps which pass infra-red radiation into the reactor chamber through upper and lower heating ports.
- the heating ports are covered by infra-red transparent cover members.
- the upper cover member is generally characterized by a central window portion and a flange portion.
- the flange portion serves to support the central window portion in the thermal reactor.
- a cover member for a semiconductor processing thermal reactor has a central quartz window portion and an outer flange portion.
- the central window portion has either an inward bow defining a concave outside surface, or an outward bow defining a convex outside surface.
- the centerline of the central window portion has a radius of curvature which when extended through the flange portion divides the flange portion into an upper flange section and a lower flange section.
- the upper and lower flange portions having substantially equal masses.
- FIG. 1A is a cross-sectional view of a thermal reactor in one embodiment of the present invention.
- FIG. 1B is a cross-sectional view of the infra-red transparent cover member of FIG. 1A.
- FIG. 1C is an enlarged view of the flange portion of the cover member shown in FIG. 1B.
- FIG. 2A is a thermal reactor cover member in another embodiment of the present invention.
- FIG. 2B is an enlarged view of the flange portion of the cover member shown in FIG. 2A.
- a quartz window for a thermal reactor is disclosed.
- numerous specific details are set forth, such as material types, dimensions, etc., in order to provide a thorough understanding of the present invention.
- the invention may be practiced without these specific details.
- well-known structures and processing steps have not been shown in particular detail in order to avoid unnecessarily obscuring the present invention.
- Thermal reactor 100 is formed by a reactor vessel 102 defining a wafer reactor chamber 104 .
- Chamber 102 is defined, in part, by a cover member 106 mounted below an upper heating source 108 , and a lower member 110 mounted above a lower heating source 112 .
- Cover member 106 and lower member 110 are generally made of quartz. Heating sources 108 and 112 provide infra-red radiant heat into the chamber through members 106 and 110 which are transparent to infra-red radiation.
- Cover member 106 includes a central window portion 114 and a peripheral flange portion 116 for supporting the central window portion.
- the window portion 106 generally has a spherical shape.
- flange portion 116 generally has a circular shape.
- Central window portion 114 is typically made of a clear fused silica quartz whereas the flange portion is made of an opaque quartz.
- the flange is captured between a baseplate 118 and an upper clamp ring 120 .
- Clamp ring 120 is secured to baseplate 118 by a suitable clamping means such as locking bolts 122 .
- cover member 116 may be made entirely of a single material, such as fused silica quartz.
- the present invention is not limited to the manner in which the cover member is attached to the reactor housing.
- central window portion 114 has an outward bow that forms a convex outside surface.
- the central window portion 114 has a centerline 160 having a curvature of radius.
- the centerline 160 divides the flange portion into an upper flange section 170 and a lower flange section 172 .
- the geometry's of central window portion 114 and flange portion 116 are configured such that the upper flange section 170 and the lower flange section 172 of flange portion 116 have substantially the same mass and/or cross-sectional area.
- Cover member 106 is resiliently supported by a cushioning material such as base sealing rings 124 that are positioned between baseplate 118 and flange 116 . Cover member 106 is further supported by clamp sealing o-rings 126 that are located between clamp ring 120 and flange 116 . The o-rings are preloaded by the locking bolts 122 to provide a double seal for preventing the processing gas within chamber 104 from escaping into the ambient atmosphere.
- Lower member 110 also has a window portion 128 and a flange portion 130 that is similarly mounted between baseplate 118 and a lower clamp ring 132 with locking bolts 134 and o-rings 136 and 138 .
- Process gas enters chamber 104 through a gas inlet port 140 and exits the chamber through an exit port 142 .
- the pressure of the gas within the chamber is maintained by metering the gas flow out of exit port 142 .
- a susceptor 144 is provided within chamber 104 for supporting a wafer 146 .
- Susceptor 144 includes a mounting shaft 148 that is coupled to a motor (not shown). In this manner, wafer 148 may be rotated during processing to permit a more uniform heating and deposition.
- the diameter of window portion 114 may vary significantly from one thermal reactor to another.
- window portion 114 has a diameter of 17.5 inches and a radius of curvature of 35 inches. Depending upon the specific application, the radius of curvature typically is in the range of 15 to 100 inches.
- the thickness of central window portion 114 is generally between of 0.1 to 0.2 inches.
- the thickness of flange portion 116 is in the range of 0.5 to 1.5 inches.
- Flange dimensions “A” and “B” are approximately 3.0 and 1.6 inches, respectively.
- Flange dimension “A” may vary between 2.0 and 3.5 inches.
- Flange dimension “B” may vary between 0.75 to 2.0 inches.
- Cover member 206 includes a central window portion 214 and a flange portion 216 .
- the central window portion 214 has an inward bow that forms a concave outside surface. Cover member 206 is typically used in ambient pressure or above-ambient pressure thermal reactors.
- the central window portion 214 has a centerline 260 having a curvature of radius. When extended through the flange portion 216 of cover member 206 , the centerline 260 divides the flange portion 216 into an upper flange section 270 and a lower flange section 272 .
- central window portion 214 and flange portion 216 are configured such that the upper flange section 270 and the lower flange section 272 of flange portion 216 have substantially the same mass and/or cross-sectional area. As previously discussed, since the upper and lower flange sections have substantially the same mass and/or cross-sectional area, the resisting force within flange portion 216 is equally distributed between the upper and lower flange sections.
- window portion 214 has a diameter of 17.5 inches.
- the radius of curvature of central window portion 114 is relatively large.
- window portion 114 has a radius of curvature of 100 inches. Depending upon the specific application, the radius of curvature typically is in the range of 50 to 300 inches.
- the thickness of central window portion 114 is generally between of 0.1 to 0.2 inches.
- the thickness of flange portion 116 is in the range of 0.5 to 1.5 inches.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A cover member for a semiconductor processing thermal reactor. The cover member has a central quartz window portion and an outer flange portion. The central window portion has either an inward bow defining a concave outside surface, or an outward bow defining a convex outside surface. The centerline of the central window portion has a radius of curvature which when extended through the flange portion divides the flange portion into an upper flange section and a lower flange section. The upper and lower flange portions having substantially equal masses.
Description
- The present invention relates to thermal reactors for processing semiconductor wafers, and more particularly to a reactor having a domed window with the center of mass equally distributed within the flange portion of the window.
- Recent technological progress is closely identified with the increasing miniaturization of electronic circuits made possible by advances in semiconductor processing. Certain advanced processing techniques require exposing a semiconductor structure to a reactant gas under carefully controlled conditions. Examples of such processes include chemical vapor deposition and etching processes. Of particular concern is the uniformity of temperature and gas flow to ensure uniform results, e.g., deposition thickness, across a wafer.
- The process of depositing layers on a semiconductor wafer (or substrates usually involves placing the substrate within a thermal reactor chamber and holding the wafer within a stream of a reactant gas flowing across the surface of a wafer. The thermal reactor is heated by external lamps which pass infra-red radiation into the reactor chamber through upper and lower heating ports. The heating ports are covered by infra-red transparent cover members. The upper cover member is generally characterized by a central window portion and a flange portion. The flange portion serves to support the central window portion in the thermal reactor. During wafer processing stresses are created in the cover member due to a pressure differential across the cover and/or the thermal expansion due to heating of the central window portion. These stresses tend to localize in the flange portion of the cover member.
- A cover member for a semiconductor processing thermal reactor is disclosed. The cover member has a central quartz window portion and an outer flange portion. The central window portion has either an inward bow defining a concave outside surface, or an outward bow defining a convex outside surface. The centerline of the central window portion has a radius of curvature which when extended through the flange portion divides the flange portion into an upper flange section and a lower flange section. The upper and lower flange portions having substantially equal masses.
- The present invention is illustrated by way of example and is not limited by the figures of the accompanying drawings, in which like references indicate similar elements, and in which:
- FIG. 1A is a cross-sectional view of a thermal reactor in one embodiment of the present invention.
- FIG. 1B is a cross-sectional view of the infra-red transparent cover member of FIG. 1A.
- FIG. 1C is an enlarged view of the flange portion of the cover member shown in FIG. 1B.
- FIG. 2A is a thermal reactor cover member in another embodiment of the present invention.
- FIG. 2B is an enlarged view of the flange portion of the cover member shown in FIG. 2A.
- A quartz window for a thermal reactor is disclosed. In the following description, numerous specific details are set forth, such as material types, dimensions, etc., in order to provide a thorough understanding of the present invention. However, it will be obvious to one of ordinary skill in the art that the invention may be practiced without these specific details. In other instances, well-known structures and processing steps have not been shown in particular detail in order to avoid unnecessarily obscuring the present invention.
- With reference to FIGS. 1A through 1C, a thermal reactor in one embodiment of the present invention is illustrated.
Thermal reactor 100 is formed by areactor vessel 102 defining awafer reactor chamber 104.Chamber 102 is defined, in part, by acover member 106 mounted below anupper heating source 108, and alower member 110 mounted above alower heating source 112.Cover member 106 andlower member 110 are generally made of quartz.Heating sources members Cover member 106 includes acentral window portion 114 and aperipheral flange portion 116 for supporting the central window portion. Thewindow portion 106 generally has a spherical shape. As viewed from above,flange portion 116 generally has a circular shape.Central window portion 114 is typically made of a clear fused silica quartz whereas the flange portion is made of an opaque quartz. The flange is captured between a baseplate 118 and anupper clamp ring 120.Clamp ring 120 is secured to baseplate 118 by a suitable clamping means such aslocking bolts 122. It is appreciated thatcover member 116 may be made entirely of a single material, such as fused silica quartz. Moreover, it is to be understood that the present invention is not limited to the manner in which the cover member is attached to the reactor housing. - In the embodiment illustrated in FIGS. 1A through 1C,
central window portion 114 has an outward bow that forms a convex outside surface. Thecentral window portion 114 has acenterline 160 having a curvature of radius. When extended through theflange portion 116 ofcover member 106, thecenterline 160 divides the flange portion into anupper flange section 170 and alower flange section 172. The geometry's ofcentral window portion 114 andflange portion 116 are configured such that theupper flange section 170 and thelower flange section 172 offlange portion 116 have substantially the same mass and/or cross-sectional area. -
Cover member 106 is resiliently supported by a cushioning material such asbase sealing rings 124 that are positioned between baseplate 118 andflange 116.Cover member 106 is further supported by clamp sealing o-rings 126 that are located betweenclamp ring 120 andflange 116. The o-rings are preloaded by thelocking bolts 122 to provide a double seal for preventing the processing gas withinchamber 104 from escaping into the ambient atmosphere.Lower member 110 also has awindow portion 128 and aflange portion 130 that is similarly mounted between baseplate 118 and alower clamp ring 132 withlocking bolts 134 and o-rings - Process gas enters
chamber 104 through agas inlet port 140 and exits the chamber through anexit port 142. The pressure of the gas within the chamber is maintained by metering the gas flow out ofexit port 142. - A
susceptor 144 is provided withinchamber 104 for supporting awafer 146.Susceptor 144 includes a mountingshaft 148 that is coupled to a motor (not shown). In this manner,wafer 148 may be rotated during processing to permit a more uniform heating and deposition. - As previously discussed, stresses in the
cover member 106 are generally localized in the outer flange portion of the cover member. A salient feature of the present invention lies in the construction of thecover member 106. The domed or bowed configuration ofcentral window portion 114 causes the stress withincentral window portion 114 to be transmitted into theflange portion 116. The flange portion thus acts to resist the outward expansion of thedomed cover member 106 due to a pressure differential across the cover and/or the thermal expansion due to heating ofcentral window portion 114. Since theupper flange section 170 andlower flange section 172 have substantially the same mass and/or cross-sectional area, the resisting force withinflange portion 116 is equally distributed between the upper and lower flange sections. By equally distributing the mass of the flange portion on opposing sides of thecenterline 160, the structural strength of the flange portion is effectively increased since the resisting forces are essentially equally divided between the upper and lower sections of the flange. - The diameter of
window portion 114 may vary significantly from one thermal reactor to another. In one exemplaryembodiment window portion 114 has a diameter of 17.5 inches and a radius of curvature of 35 inches. Depending upon the specific application, the radius of curvature typically is in the range of 15 to 100 inches. The thickness ofcentral window portion 114 is generally between of 0.1 to 0.2 inches. The thickness offlange portion 116 is in the range of 0.5 to 1.5 inches. Flange dimensions “A” and “B” are approximately 3.0 and 1.6 inches, respectively. Flange dimension “A” may vary between 2.0 and 3.5 inches. Flange dimension “B” may vary between 0.75 to 2.0 inches. - Turning now to FIGS. 2A and 2B, a thermal
reactor cover member 206 in accordance with another embodiment of the present invention is shown.Cover member 206 includes acentral window portion 214 and aflange portion 216. Thecentral window portion 214 has an inward bow that forms a concave outside surface.Cover member 206 is typically used in ambient pressure or above-ambient pressure thermal reactors. Thecentral window portion 214 has acenterline 260 having a curvature of radius. When extended through theflange portion 216 ofcover member 206, thecenterline 260 divides theflange portion 216 into anupper flange section 270 and alower flange section 272. The geometry's ofcentral window portion 214 andflange portion 216 are configured such that theupper flange section 270 and thelower flange section 272 offlange portion 216 have substantially the same mass and/or cross-sectional area. As previously discussed, since the upper and lower flange sections have substantially the same mass and/or cross-sectional area, the resisting force withinflange portion 216 is equally distributed between the upper and lower flange sections. - In one
embodiment window portion 214 has a diameter of 17.5 inches. The radius of curvature ofcentral window portion 114 is relatively large. In one embodiment,window portion 114 has a radius of curvature of 100 inches. Depending upon the specific application, the radius of curvature typically is in the range of 50 to 300 inches. The thickness ofcentral window portion 114 is generally between of 0.1 to 0.2 inches. The thickness offlange portion 116 is in the range of 0.5 to 1.5 inches. - It is appreciated that the methods and apparatus of the present invention may be used for multiple wafer processing and single wafer processing. It is further understood that the relative dimensions, geometric shapes, materials and process techniques set forth within the specification are exemplary of the disclosed embodiments only. Whereas many alterations and modifications to the present invention will no doubt become apparent to a person ordinarily skilled in the art having read the foregoing description, it is to be understood that the particular embodiments shown and described by way of illustration are in no way intended to be limiting. Therefore, reference to the details of the illustrated diagrams is not intended to limit the scope of the claims which themselves recite only those features regarded as essential to the invention.
Claims (14)
1. An infra-red transparent cover member for a thermal reactor comprising:
a central window portion having a centerline, the centerline having a radius of curvature; and
a flange portion, the centerline of the central window portion when extended through the flange portion dividing the flange portion into an upper flange section and a lower flange section, the upper and lower flange sections having substantially the same cross-sectional area.
2. The cover member of claim 1 wherein the central window portion has an outward bow defining a convex outside surface.
3. The cover member of claim 1 wherein the central window portion has an inward bow defining a concave outside surface.
4. The cover member of claim 1 wherein the central window portion is made of clear fused silica quartz.
5. The cover member of claim 1 wherein the flange portion is made of opaque silica quartz.
6. The cover member of claim 2 wherein the radius of curvature of the central window portion is in the range of 15 to 100 inches.
7. The cover member of claim 3 wherein the radius of curvature of the central window portion is in the range of 50 to 300 inches.
8. A thermal reactor for processing a semiconductor wafer comprising:
a wafer chamber for containing at least one semiconductor wafer during processing;
a window member at least partially defining the wafer chamber, the window member comprising a flange portion and a central window portion having a center line with a radius of curvature, the center line of the central window portion when extended through the flange portion dividing the flange portion into an upper flange section and a lower flange section, the upper and lower flange sections having substantially the same cross-section area.
9. The cover member of claim 8 wherein the central window portion has an outward bow defining a convex outside surface.
10. The cover member of claim 8 wherein the central window portion has an inward bow defining a concave outside surface.
11. The cover member of claim 8 wherein the central window portion is made of clear fused silica quartz.
12. The cover member of claim 8 wherein the flange portion is made of opaque silica quartz.
13. The cover member of claim 9 wherein the radius of curvature of the central window portion is in the range of 15 to 100 inches.
14. The cover member of claim 10 wherein the radius of curvature of the central window portion is in the range of 50 to 300 inches.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/122,620 US6406543B1 (en) | 1998-07-23 | 1998-07-23 | Infra-red transparent thermal reactor cover member |
EP99935833A EP1097470B1 (en) | 1998-07-23 | 1999-07-21 | Infra-red transparent thermal reactor cover member |
PCT/US1999/016583 WO2000005753A1 (en) | 1998-07-23 | 1999-07-21 | Infra-red transparent thermal reactor cover member |
JP2000561650A JP2002521817A (en) | 1998-07-23 | 1999-07-21 | Infrared transparent thermal reactor cover member |
DE69934494T DE69934494T2 (en) | 1998-07-23 | 1999-07-21 | INFRARED TRANSMITTER COVER FOR A THERMAL REACTOR |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/122,620 US6406543B1 (en) | 1998-07-23 | 1998-07-23 | Infra-red transparent thermal reactor cover member |
Publications (2)
Publication Number | Publication Date |
---|---|
US20020046704A1 true US20020046704A1 (en) | 2002-04-25 |
US6406543B1 US6406543B1 (en) | 2002-06-18 |
Family
ID=22403789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/122,620 Expired - Fee Related US6406543B1 (en) | 1998-07-23 | 1998-07-23 | Infra-red transparent thermal reactor cover member |
Country Status (5)
Country | Link |
---|---|
US (1) | US6406543B1 (en) |
EP (1) | EP1097470B1 (en) |
JP (1) | JP2002521817A (en) |
DE (1) | DE69934494T2 (en) |
WO (1) | WO2000005753A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20110143297A1 (en) * | 2011-01-28 | 2011-06-16 | Poole Ventura, Inc. | Thermal Diffusion Chamber |
CN102177571A (en) * | 2008-10-07 | 2011-09-07 | 应用材料公司 | Apparatus for efficient removal of halogen residues from etched substrates |
US20140083360A1 (en) * | 2012-09-26 | 2014-03-27 | Applied Materials, Inc. | Process chamber having more uniform gas flow |
US8950470B2 (en) | 2010-12-30 | 2015-02-10 | Poole Ventura, Inc. | Thermal diffusion chamber control device and method |
US11124872B2 (en) | 2018-02-20 | 2021-09-21 | Kokusai Electric Corporation | Substrate processing apparatus |
Families Citing this family (9)
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JP2003022982A (en) * | 2001-07-09 | 2003-01-24 | Tokyo Electron Ltd | Heat treatment device |
US7763548B2 (en) | 2003-08-06 | 2010-07-27 | Micron Technology, Inc. | Microfeature workpiece processing system for, e.g., semiconductor wafer analysis |
JP5169298B2 (en) * | 2008-02-22 | 2013-03-27 | 株式会社デンソー | Semiconductor manufacturing equipment |
JP5110649B2 (en) * | 2008-04-22 | 2012-12-26 | 株式会社Sumco | Semiconductor manufacturing equipment |
DE102008034260B4 (en) * | 2008-07-16 | 2014-06-26 | Siltronic Ag | Method for depositing a layer on a semiconductor wafer by means of CVD in a chamber and chamber for depositing a layer on a semiconductor wafer by means of CVD |
CN108364889A (en) * | 2013-01-16 | 2018-08-03 | 应用材料公司 | Quartzy upper arch and lower domes |
US9322097B2 (en) * | 2013-03-13 | 2016-04-26 | Applied Materials, Inc. | EPI base ring |
US10446420B2 (en) * | 2016-08-19 | 2019-10-15 | Applied Materials, Inc. | Upper cone for epitaxy chamber |
JP7038770B2 (en) * | 2020-08-12 | 2022-03-18 | 株式会社Kokusai Electric | Substrate processing equipment, semiconductor equipment manufacturing methods, programs |
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US4920918A (en) | 1989-04-18 | 1990-05-01 | Applied Materials, Inc. | Pressure-resistant thermal reactor system for semiconductor processing |
US5194401A (en) | 1989-04-18 | 1993-03-16 | Applied Materials, Inc. | Thermally processing semiconductor wafers at non-ambient pressures |
US5108792A (en) | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
US5179677A (en) * | 1990-08-16 | 1993-01-12 | Applied Materials, Inc. | Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity |
US5085887A (en) * | 1990-09-07 | 1992-02-04 | Applied Materials, Inc. | Wafer reactor vessel window with pressure-thermal compensation |
JPH05267228A (en) * | 1992-03-18 | 1993-10-15 | Hitachi Ltd | Magnetic field microwave plasma processor |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5551982A (en) * | 1994-03-31 | 1996-09-03 | Applied Materials, Inc. | Semiconductor wafer process chamber with susceptor back coating |
FR2763964B1 (en) | 1997-05-28 | 1999-08-13 | Sgs Thomson Microelectronics | IMPROVEMENT OF THE GAS FLOW IN AN EPITAXY REACTOR |
US6099648A (en) | 1997-08-06 | 2000-08-08 | Applied Materials, Inc. | Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures |
US5916370A (en) | 1998-06-12 | 1999-06-29 | Applied Materials, Inc. | Semiconductor processing chamber having diamond coated components |
-
1998
- 1998-07-23 US US09/122,620 patent/US6406543B1/en not_active Expired - Fee Related
-
1999
- 1999-07-21 EP EP99935833A patent/EP1097470B1/en not_active Expired - Lifetime
- 1999-07-21 DE DE69934494T patent/DE69934494T2/en not_active Expired - Fee Related
- 1999-07-21 JP JP2000561650A patent/JP2002521817A/en not_active Ceased
- 1999-07-21 WO PCT/US1999/016583 patent/WO2000005753A1/en active IP Right Grant
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102177571A (en) * | 2008-10-07 | 2011-09-07 | 应用材料公司 | Apparatus for efficient removal of halogen residues from etched substrates |
CN105895517A (en) * | 2008-10-07 | 2016-08-24 | 应用材料公司 | Apparatus for efficient removal of halogen residues from etched substrates |
US8950470B2 (en) | 2010-12-30 | 2015-02-10 | Poole Ventura, Inc. | Thermal diffusion chamber control device and method |
US20110143297A1 (en) * | 2011-01-28 | 2011-06-16 | Poole Ventura, Inc. | Thermal Diffusion Chamber |
US8097085B2 (en) | 2011-01-28 | 2012-01-17 | Poole Ventura, Inc. | Thermal diffusion chamber |
US20140083360A1 (en) * | 2012-09-26 | 2014-03-27 | Applied Materials, Inc. | Process chamber having more uniform gas flow |
US11124872B2 (en) | 2018-02-20 | 2021-09-21 | Kokusai Electric Corporation | Substrate processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP2002521817A (en) | 2002-07-16 |
DE69934494T2 (en) | 2007-04-19 |
DE69934494D1 (en) | 2007-02-01 |
WO2000005753A1 (en) | 2000-02-03 |
US6406543B1 (en) | 2002-06-18 |
EP1097470B1 (en) | 2006-12-20 |
EP1097470A1 (en) | 2001-05-09 |
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