JP7038770B2

JP7038770B2 - Substrate processing equipment, semiconductor equipment manufacturing methods, programs

Info

Publication number: JP7038770B2
Application number: JP2020136092A
Authority: JP
Inventors: 幹雄大野; 慧村田
Original assignee: Kokusai Electric Corp
Current assignee: Kokusai Electric Corp
Priority date: 2020-08-12
Filing date: 2020-08-12
Publication date: 2022-03-18
Anticipated expiration: 2038-02-20
Also published as: JP2020194972A

Description

本発明は、基板を処理する基板処理装置、半導体装置の製造方法、プログラムに関する。 The present invention relates to a substrate processing apparatus for processing a substrate, a method for manufacturing a semiconductor apparatus, and a program.

基板を処理する基板処理装置は、処理室にて基板上に様々な膜を形成することが可能である。一部の膜は、酸素等の大気成分の影響を少なくする必要がある。そのため、基板処理装置では大気成分の影響を低減するよう努める必要がある。基板を処理する装置としては、例えば特許文献１に開示の装置が存在する。 A substrate processing apparatus that processes a substrate can form various films on the substrate in a processing chamber. Some membranes need to reduce the effects of atmospheric components such as oxygen. Therefore, it is necessary to make efforts to reduce the influence of atmospheric components in the substrate processing equipment. As an apparatus for processing a substrate, for example, there is an apparatus disclosed in Patent Document 1.

特開２０１０-１９９１６０号公報Japanese Unexamined Patent Publication No. 2010-199160

処理室において、大気雰囲気の侵入を抑制可能な技術を提供することを目的とする。 It is an object of the present invention to provide a technology capable of suppressing the invasion of atmospheric atmosphere in a treatment room.

基板を支持する基板支持部と、前記基板が処理される第一空間を有する処理室と、前記第一空間の雰囲気を排気する排気部と、前記第一空間にガスを供給するガス導入管と、前記ガス導入管に連通される処理ガス搬送管と、前記第一空間の外側で、前記ガス導入管と前記処理ガス搬送管とが隣接する隣接部を覆うように構成すると共に、前記ガス導入管と前記処理ガス搬送管とを固定する継手部と、前記隣接部と前記第二空間との間に設けられた圧力調整部とを有する技術。 A substrate support portion that supports the substrate, a processing chamber having a first space in which the substrate is processed, an exhaust portion that exhausts the atmosphere of the first space, and a gas introduction pipe that supplies gas to the first space. The processed gas transfer pipe communicated with the gas introduction pipe and the gas introduction pipe and the processed gas transfer pipe are configured to cover adjacent adjacent portions on the outside of the first space, and the gas introduction. A technique having a joint portion for fixing a pipe and the processing gas transport pipe, and a pressure adjusting portion provided between the adjacent portion and the second space.

本技術によれば、処理室において、大気雰囲気の侵入を抑制可能となる。 According to this technology, it is possible to suppress the invasion of the atmospheric atmosphere in the processing chamber.

第一の実施形態に係る基板処理装置を説明する説明図である。It is explanatory drawing explaining the substrate processing apparatus which concerns on 1st Embodiment. 第一の実施形態に係る基板処理装置が備える処理炉の説明図である。It is explanatory drawing of the processing furnace provided in the substrate processing apparatus which concerns on 1st Embodiment. 第一の実施形態に係る継手部とその周辺を説明する説明図である。It is explanatory drawing explaining the joint part and its peripheral part which concerns on 1st Embodiment. 比較例に係る基板処理装置を説明する説明図である。It is explanatory drawing explaining the substrate processing apparatus which concerns on a comparative example. 第一の実施形態に係る基板処理装置のコントローラを説明する説明図である。It is explanatory drawing explaining the controller of the substrate processing apparatus which concerns on 1st Embodiment. 第二の実施形態にかかる継手部とその周辺を説明する説明図である。It is explanatory drawing explaining the joint part and its peripheral part concerning 2nd Embodiment. 第三の実施形態にかかる基板処理装置を説明する説明図である。It is explanatory drawing explaining the substrate processing apparatus which concerns on 3rd Embodiment.

（第一の実施形態）
（基板処理装置の構成）
（装置全体）
図１は、本発明の一実施形態にかかる基板処理装置の構成例を示す斜透視図である。
基板処理装置１０は、内部に処理炉４００等の主要部が配置される筐体１２を備えている。筐体１２の正面側には、ＯＨＴ（ＯｖｅｒｈｅａｄＨｏｉｓｔＴｒａｎｓｐｏｒｔ）ステージと呼ばれるポッドステージ１８が配置されている。ポッドステージ１８上には、ウエハ１４を収納する搬送容器としてのポッド１６が搬送されて載置される。ポッド１６は、その内部に例えば２５枚のウエハ１４が収納され、図示しない蓋が閉じられた状態でポッドステージ１８上に載置されるように構成されている。つまり、基板処理装置１０では、ポッド１６がウエハキャリアとして使用され、そのポッド１６が載置されるステージ部としてのポッドステージ１８を利用しつつ外部装置（例えばポッド搬送システム）とポッド１６の授受を行うようになっている。 (First embodiment)
(Configuration of board processing equipment)
(Whole device)
FIG. 1 is an oblique perspective view showing a configuration example of a substrate processing apparatus according to an embodiment of the present invention.
The substrate processing apparatus 10 includes a housing 12 in which a main portion such as a processing furnace 400 is arranged. A pod stage 18 called an OHT (Overhead Hoist Transport) stage is arranged on the front side of the housing 12. The pod 16 as a transport container for accommodating the wafer 14 is transported and placed on the pod stage 18. The pod 16 is configured such that, for example, 25 wafers 14 are housed inside the pod 16 and placed on the pod stage 18 with a lid (not shown) closed. That is, in the substrate processing device 10, the pod 16 is used as a wafer carrier, and the pod 16 is exchanged with an external device (for example, a pod transfer system) while using the pod stage 18 as a stage portion on which the pod 16 is placed. It is supposed to do.

筐体１２内の正面側であって、ポッドステージ１８に対向する位置には、ポッド１６を搬送する搬送容器移載ロボットとしてのポッド搬送装置２０が配置されている。ポッド搬送装置２０の近傍には、ポッド１６を格納可能な第一棚としての回転ポッド棚２２ａ、ポッド１６を格納可能な第二棚としての積層ポッド棚２２ｂおよびポッドオープナ２４がそれぞれ配置されている。 A pod transfer device 20 as a transfer container transfer robot for transporting the pod 16 is arranged at a position on the front side of the housing 12 facing the pod stage 18. In the vicinity of the pod transfer device 20, a rotating pod shelf 22a as a first shelf capable of storing the pod 16, a laminated pod shelf 22b as a second shelf capable of storing the pod 16, and a pod opener 24 are arranged. ..

ポッド搬送装置２０は、ポッドステージ１８と回転ポッド棚２２ａと積層ポッド棚２２ｂとポッドオープナ２４との間でポッド１６を搬送するように構成されている。 The pod transfer device 20 is configured to transfer the pod 16 between the pod stage 18, the rotating pod shelf 22a, the laminated pod shelf 22b, and the pod opener 24.

回転ポッド棚２２ａは、ポッドオープナ２４の上方の領域である第一の棚領域に配置され、ポッド１６を複数個載置した状態で保持するように構成されている。回転ポッド棚２２ａは、複数段（例えば五段）の棚板を有して、モータ等の図示せぬ間欠回転駆動装置によって一方向にピッチ送り回転される、いわゆる回転棚によって構成することが考えられる。ただし、回転機能は必須ではない。 The rotary pod shelf 22a is arranged in a first shelf area, which is an area above the pod opener 24, and is configured to hold a plurality of pods 16 in a mounted state. It is conceivable that the rotary pod shelf 22a is composed of a so-called rotary shelf having a shelf board having a plurality of stages (for example, five stages) and being pitch-fed and rotated in one direction by an intermittent rotation drive device (not shown) such as a motor. Be done. However, the rotation function is not essential.

積層ポッド棚２２ｂは、ポッドステージ１８の下方の領域である第二の棚領域に配置され、ポッド１６を複数個載置した状態で保持するように構成されている。積層ポッド棚２２ｂは、複数段（例えば三段）の棚板を有して、それぞれの棚板上にポッド１６が載置される、いわゆる積層棚によって構成することが考えられる。なお、積層ポッド棚２２ｂにおける複数段の棚板のうち、少なくとも一つ（例えば、最下段）の棚板は、筐体１２の正面側から手作業にてポッド１６を載置し得るように構成されていてもよい。 The laminated pod shelf 22b is arranged in a second shelf area, which is a region below the pod stage 18, and is configured to hold a plurality of pods 16 in a mounted state. It is conceivable that the laminated pod shelf 22b has a plurality of (for example, three) shelf boards, and is configured by a so-called laminated shelf in which the pod 16 is placed on each shelf board. Of the plurality of shelves in the laminated pod shelf 22b, at least one (for example, the lowest) shelf is configured so that the pod 16 can be manually placed from the front side of the housing 12. It may have been done.

ポッドオープナ２４は、ポッド１６の蓋を開けるように構成されている。なお、ポッドオープナ２４に対しては、蓋を開けられたポッド１６内のウエハ１４の枚数を検知する基板枚数検知器が隣接配置されていてもよい。 The pod opener 24 is configured to open the lid of the pod 16. A substrate number detector for detecting the number of wafers 14 in the pod 16 with the lid opened may be arranged adjacent to the pod opener 24.

ポッドオープナ２４よりも筐体１２内の背面側には、当該筐体１２内において一つの部屋として区画される、搬送領域としての移載室５０が形成されている。 On the back side of the housing 12 with respect to the pod opener 24, a transfer room 50 as a transport area, which is partitioned as one room in the housing 12, is formed.

移載室５０内には、基板移載機２８と、基板支持体としての基板支持部３０と、が配置されている。基板支持部３０はボートとも呼ぶ。基板移載機２８は、例えば５枚のウエハ１４を取り出すことができるアーム（ツィーザ）３２を有している。図示しない駆動手段によりアーム３２を上下回転動作させることにより、ポッドオープナ２４の位置に置かれたポッド１６と基板支持部３０との間にて、ウエハ１４を搬送させることが可能なように構成されている。 A substrate transfer machine 28 and a substrate support portion 30 as a substrate support are arranged in the transfer chamber 50. The board support portion 30 is also called a boat. The substrate transfer machine 28 has, for example, an arm (tweezer) 32 capable of taking out five wafers 14. By rotating the arm 32 up and down by a drive means (not shown), the wafer 14 can be conveyed between the pod 16 placed at the position of the pod opener 24 and the substrate support portion 30. ing.

基板支持部３０は、複数枚（例えば、５０枚～１７５枚程度）のウエハ１４を、水平姿勢で、かつ、その中心を揃えた状態で、鉛直方向に所定間隔を空けて整列積層させて、縦方向に多段支持するように構成されている。ウエハ１４を支持した基板支持部３０は、図示せぬ昇降機構としてのボートエレベータによって、昇降させることが可能なように構成されている。 The substrate support portion 30 is formed by aligning and laminating a plurality of wafers (for example, about 50 to 175 wafers) in a horizontal posture and with their centers aligned at predetermined intervals in the vertical direction. It is configured to support multiple stages in the vertical direction. The substrate support portion 30 that supports the wafer 14 is configured to be able to be raised and lowered by a boat elevator as a raising and lowering mechanism (not shown).

筐体１２内の背面側上部、すなわち移載室５０の上方側には、処理炉４００が配置されている。処理炉４００内には、複数枚のウエハ１４を装填した上述の基板支持部３０が、下方から搬入されるように構成されている。 The processing furnace 400 is arranged in the upper part on the back side in the housing 12, that is, on the upper side of the transfer chamber 50. The above-mentioned substrate support portion 30 loaded with a plurality of wafers 14 is configured to be carried into the processing furnace 400 from below.

（処理炉）
続いて、上述した処理炉４００について、図２、図３を用いて説明する。
図２は、本発明の一実施形態にかかる基板処理装置に用いられる処理炉の構成例を示す縦断面図である。図３は本発明の一実施形態にかかるガス導入管、処理ガス搬送管、それらの周辺の部分拡大図である。 (Processing furnace)
Subsequently, the above-mentioned processing furnace 400 will be described with reference to FIGS. 2 and 3.
FIG. 2 is a vertical sectional view showing a configuration example of a processing furnace used in the substrate processing apparatus according to the embodiment of the present invention. FIG. 3 is a partially enlarged view of a gas introduction pipe, a treated gas transfer pipe, and their surroundings according to an embodiment of the present invention.

処理炉４００は、反応管で構成される反応管４０１を備えている。反応管４０１は、例えば石英（ＳｉＯ_２）や炭化珪素（ＳｉＣ）等の耐熱性を有する非金属材料から構成され、上端部が閉塞され、下端部が開放された円筒形状となっている。図３に記載のように、下端部は後述するＯリング４１４を介して、マニホールド４０５によって支持される。反応管４０１とマニホールド４０５の内側に構成される空間を処理空間４０２と呼ぶ。また、反応管４０１とマニホールド４０５とをまとめて処理室と呼ぶ。処理空間４０２は第一空間とも呼ぶ。 The processing furnace 400 includes a reaction tube 401 composed of a reaction tube. The reaction tube 401 is made of a non-metal material having heat resistance such as quartz (SiO ₂ ) and silicon carbide (SiC), and has a cylindrical shape in which the upper end is closed and the lower end is open. As described in FIG. 3, the lower end is supported by the manifold 405 via an O-ring 414, which will be described later. The space formed inside the reaction tube 401 and the manifold 405 is called a processing space 402. Further, the reaction tube 401 and the manifold 405 are collectively referred to as a processing chamber. The processing space 402 is also referred to as a first space.

マニホールド４０５には炉口が形成される。炉口は、基板支持部３０が処理空間４０２に挿入される際に通過する入出口である。マニホールド、炉口等をまとめて炉口部とも呼ぶ。 A hearth is formed in the manifold 405. The furnace port is an inlet / outlet through which the substrate support portion 30 is inserted into the processing space 402. Manifolds, furnace openings, etc. are collectively referred to as the furnace opening section.

処理空間４０２には、基板支持部３０によって水平姿勢に支持されたウエハ１４が鉛直方向に多段に整列した状態で収容されるように構成されている。処理空間４０２に収容される基板支持部３０は、回転機構４０３によって回転軸４０４を回転させることで、処理空間４０２内の気密を保持したまま、複数のウエハ１４を搭載した状態で回転可能に構成されている。 The processing space 402 is configured to accommodate the wafers 14 supported in a horizontal posture by the substrate support portion 30 in a state of being arranged in multiple stages in the vertical direction. The substrate support portion 30 housed in the processing space 402 is configured to be rotatable with a plurality of wafers 14 mounted while maintaining the airtightness in the processing space 402 by rotating the rotation shaft 404 by the rotation mechanism 403. Has been done.

反応管４０１の下方には、この反応管４０１と同心円状にマニホールド４０５が配設される。マニホールド４０５は、例えばステンレス鋼等の金属材料から構成され、上端部および下端部が開放された円筒形状となっている。このマニホールド４０５により、反応管４０１は、下端部側から縦向きに支持される。つまり、処理空間４０２を形成する反応管４０１がマニホールド４０５を介して鉛直方向に立脚されて、処理炉４００が構成されることになる。 Below the reaction tube 401, a manifold 405 is arranged concentrically with the reaction tube 401. The manifold 405 is made of a metal material such as stainless steel, and has a cylindrical shape with open upper and lower ends. The reaction tube 401 is supported vertically from the lower end side by the manifold 405. That is, the reaction tube 401 forming the processing space 402 is erected in the vertical direction via the manifold 405 to form the processing furnace 400.

炉口は、図示せぬボートエレベータが上昇した際に、シールキャップ４０６により気密に封止されるように構成されている。マニホールド４０５の下端部とシールキャップ４０６との間には、処理空間４０２内を気密に封止するＯリング等の封止部材４０７が設けられている。 The hearth is configured to be hermetically sealed by a seal cap 406 when the boat elevator (not shown) rises. A sealing member 407 such as an O-ring that airtightly seals the inside of the processing space 402 is provided between the lower end portion of the manifold 405 and the seal cap 406.

また、マニホールド４０５には、処理空間４０２内に処理ガスやパージガス等を導入するためのガス導入管４０８と、処理空間４０２内のガスを排気するための排気部４１０とが、それぞれ接続されている。排気部４１０は排気管４１０ａとＡＰＣ（ＡｕｔｏＰｒｅｓｓｕｒｅＣｏｎｔｒｏｌｌｅｒ）４１０ｂを有する。 Further, the manifold 405 is connected to a gas introduction pipe 408 for introducing a processing gas, a purge gas, etc. into the processing space 402, and an exhaust unit 410 for exhausting the gas in the processing space 402, respectively. .. The exhaust unit 410 has an exhaust pipe 410a and an APC (Auto Pressure Controller) 410b.

ガス導入管４０８はノズルである。ガス導入管４０８の下流側には複数のガス供給孔が設けられ、ガス導入管４０８の管内は反応管４０１に連通するよう構成される。処理ガス等は、ガス供給孔から処理空間４０２に供給される。 The gas introduction pipe 408 is a nozzle. A plurality of gas supply holes are provided on the downstream side of the gas introduction pipe 408, and the inside of the gas introduction pipe 408 is configured to communicate with the reaction tube 401. The processing gas or the like is supplied to the processing space 402 from the gas supply hole.

ガス導入管４０８はたとえば二本設けられる。この場合、一本は原料ガスを供給する第一ガス導入管４０８ａであり、他方の管は原料ガスと反応する反応ガスを供給する第二供給管４０８ｂである。なお、ここでは二本の供給管について説明したが、それに限るものではなく、プロセスの種類によっては３本以上であってもよい。 For example, two gas introduction pipes 408 are provided. In this case, one is a first gas introduction pipe 408a for supplying the raw material gas, and the other pipe is a second supply pipe 408b for supplying the reaction gas that reacts with the raw material gas. Although two supply pipes have been described here, the number is not limited to the two, and may be three or more depending on the type of process.

ガス導入管４０８は上流側で処理ガス搬送管４０９に接続される。処理ガス搬送管４０９はガス源等からガス導入管４０８までガスを搬送するものである。第一ガス導入管４０８ａには第一処理ガス搬送管４０９ａが接続され、第二ガス導入管４０８ｂには第二処理ガス搬送管４０９ｂが接続される。ガス導入管４０８と処理ガス搬送管４０９の接続については後述する。 The gas introduction pipe 408 is connected to the processing gas transfer pipe 409 on the upstream side. The processing gas transfer pipe 409 conveys gas from a gas source or the like to a gas introduction pipe 408. The first treated gas transfer pipe 409a is connected to the first gas introduction pipe 408a, and the second treated gas transfer pipe 409b is connected to the second gas introduction pipe 408b. The connection between the gas introduction pipe 408 and the processing gas transfer pipe 409 will be described later.

処理ガス搬送管４０９には不活性ガス搬送管４１３が接続される。不活性ガス搬送管４１３は、処理ガス搬送管４０９に不活性ガスを供給する。不活性ガスは、例えば窒素（Ｎ２）ガスであり処理ガスのキャリアガスとして、もしくは反応管４０１、ガス導入管４０８、処理ガス搬送管４０９のパージガスとして作用する。 The inert gas transfer pipe 413 is connected to the processing gas transfer pipe 409. The inert gas transfer pipe 413 supplies the inert gas to the processing gas transfer pipe 409. The inert gas is, for example, nitrogen (N2) gas and acts as a carrier gas for the treatment gas, or as a purge gas for the reaction tube 401, the gas introduction pipe 408, and the treatment gas transfer pipe 409.

第一処理ガス搬送管４０９ａには第一不活性ガス搬送管４１３ａが接続され、第二処理ガス搬送管４０９ｂには第二不活性ガス搬送管４１３ｂが接続される。 The first inert gas transfer pipe 413a is connected to the first treatment gas transfer pipe 409a, and the second inert gas transfer pipe 413b is connected to the second treatment gas transfer pipe 409b.

処理ガス搬送管４０９には、処理ガスの供給量を制御するマスフローコントローラ４３１、バルブ４３２が設けられる。第一処理ガス搬送管４０９ａにはマスフローコントローラ４３１ａ、バルブ４３２ａが設けられる。第二処理ガス搬送管４０９ｂにはマスフローコントローラ４３１ｂ、バルブ４３２ｂが設けられる。マスフローコントローラ４３１、バルブ４３２をまとめて処理ガス供給制御部と呼ぶ。 The processing gas transfer pipe 409 is provided with a mass flow controller 431 and a valve 432 that control the supply amount of the processing gas. A mass flow controller 431a and a valve 432a are provided in the first processing gas transfer pipe 409a. The second processing gas transfer pipe 409b is provided with a mass flow controller 431b and a valve 432b. The mass flow controller 431 and the valve 432 are collectively referred to as a processing gas supply control unit.

不活性ガス搬送管４１３には、不活性ガスの供給量を制御するマスフローコントローラ４３３、バルブ４３４が設けられる。第一不活性ガス導入管４１３ａには、マスフローコントローラ４３３ａ、バルブ４３４ａが設けられる。第二不活性ガス導入管４１３ｂには、マスフローコントローラ４３３ｂ、バルブ４３４ｂが設けられる。マスフローコントローラ４３３、バルブ４３４をまとめて不活性ガス供給制御部と呼ぶ。 The inert gas transfer pipe 413 is provided with a mass flow controller 433 and a valve 434 that control the supply amount of the inert gas. The first inert gas introduction pipe 413a is provided with a mass flow controller 433a and a valve 434a. The second inert gas introduction pipe 413b is provided with a mass flow controller 433b and a valve 434b. The mass flow controller 433 and the valve 434 are collectively called the inert gas supply control unit.

処理ガス供給制御部と不活性ガス供給部とをまとめてガス供給制御部と呼ぶ。 The treated gas supply control unit and the inert gas supply unit are collectively referred to as a gas supply control unit.

反応管４０１の外周には、反応管４０１と同心円状に加熱手段（加熱機構）としてのヒータ４１１が配されている。ヒータ４１１は、処理空間４０２内が全体にわたって均一または所定の温度分布となるように、処理空間４０２内の雰囲気を加熱するように構成されている。 A heater 411 as a heating means (heating mechanism) is arranged concentrically with the reaction tube 401 on the outer periphery of the reaction tube 401. The heater 411 is configured to heat the atmosphere in the processing space 402 so that the inside of the processing space 402 has a uniform or predetermined temperature distribution throughout.

マニホールド４０５の外周には、炉口ボックス４１２が設けられる。 A hearth box 412 is provided on the outer periphery of the manifold 405.

続いて、図３を用いて、炉口ボックス４１２、ガス導入管４０８、処理ガス搬送管４０９との関係性について説明する。図３は本発明の一実施形態にかかるガス導入管４０８、処理ガス搬送管４０９、それら周辺の部分拡大図である。 Subsequently, with reference to FIG. 3, the relationship with the furnace opening box 412, the gas introduction pipe 408, and the processing gas transfer pipe 409 will be described. FIG. 3 is a partially enlarged view of a gas introduction pipe 408, a treated gas transfer pipe 409, and their surroundings according to an embodiment of the present invention.

ガス導入管４０８は、マニホールド４０５の側壁を水平姿勢で貫通しガス導入管の水平部を構成している。ガス導入管４０８とマニホールド４０５側壁との間にはＯリング４１６が設けられており、処理空間４０２内の気密が確保されるように構成されている。ここでは、マニホールド４０５のフランジ４０５ａとガス導入管４０８の間にＯリング４１６が設けられる。 The gas introduction pipe 408 penetrates the side wall of the manifold 405 in a horizontal posture to form a horizontal portion of the gas introduction pipe. An O-ring 416 is provided between the gas introduction pipe 408 and the side wall of the manifold 405, and is configured to ensure airtightness in the processing space 402. Here, an O-ring 416 is provided between the flange 405a of the manifold 405 and the gas introduction pipe 408.

ガス導入管４０８の上流側はマニホールド４０５の側壁外側に突出しており、処理ガス搬送管４０９の下流端に設けられた継手部４１５と気密に勘合している。ガス導入管４０８の下流端は、反応管４０１内にて垂直上方に向けて屈曲している。 The upstream side of the gas introduction pipe 408 projects to the outside of the side wall of the manifold 405, and is airtightly fitted with the joint portion 415 provided at the downstream end of the processing gas transfer pipe 409. The downstream end of the gas introduction pipe 408 is bent vertically upward in the reaction pipe 401.

反応管４０１、ガス導入管４０８の外周にはヒータ４１１が設けられている。ヒータ４１１はヒータベース４１３によって支持されている。ガス導入管４０８はヒータ４１１によって加熱されるので、例えば石英（ＳｉＯ_２）や炭化珪素（ＳｉＣ）等の耐熱性を有する非金属材料で構成される。 A heater 411 is provided on the outer periphery of the reaction tube 401 and the gas introduction tube 408. The heater 411 is supported by a heater base 413. Since the gas introduction pipe 408 is heated by the heater 411, it is made of a non-metal material having heat resistance such as quartz (SiO ₂ ) and silicon carbide (SiC).

また、ガス導入管４０８の屈曲部の下方には、マニホールド４０５内壁に設けられた台座４２１と、台座４２１に設けられたネジ孔を鉛直方向に貫通する傾き調整ネジ４２２と、を備えたノズル傾き調整機構が設けられている。傾き調整ネジ４２２の高さを調整してその上端をガス導入管４０８の屈曲部に下方から当接させることで、ガス導入管４０８の傾き（ガス導入管４０８のガス供給孔とウエハ１４との距離）を調整可能なように構成されている。 Further, below the bent portion of the gas introduction pipe 408, a nozzle tilt having a pedestal 421 provided on the inner wall of the manifold 405 and a tilt adjusting screw 422 that vertically penetrates a screw hole provided in the pedestal 421. An adjustment mechanism is provided. By adjusting the height of the inclination adjusting screw 422 and bringing its upper end into contact with the bent portion of the gas introduction pipe 408 from below, the inclination of the gas introduction pipe 408 (the gas supply hole of the gas introduction pipe 408 and the wafer 14 are brought into contact with each other. The distance) is configured to be adjustable.

マニホールド４０５側壁の外周であって、ヒータ４１１の下方には、炉口ボックス４１２が設けられる。炉口ボックス４１２は、主にヒータベース４１３、マニホールド４０５を囲む壁である炉口ボックス壁４２３、マニホールド４０５とで構成される。炉口ボックス４１２には排気口４２４が設けられる。炉口ボックス４１２内に構成される空間４１２ａは第二空間とも呼ぶ。 A hearth box 412 is provided on the outer periphery of the side wall of the manifold 405 and below the heater 411. The hearth box 412 is mainly composed of a heater base 413, a hearth box wall 423 which is a wall surrounding the manifold 405, and a manifold 405. The furnace port box 412 is provided with an exhaust port 424. The space 412a configured in the hearth box 412 is also called a second space.

炉口ボックス４１２は、炉口部で発生するガス漏れを局所的に捕獲して排気口４２４を介して装置外に排出するものである。なお、炉口ボックス４１２は雰囲気を排気できればよく、反応管４０１のように真空レベルにしたり、雰囲気をパージしたりすることもない。したがって、炉口ボックスは大気雰囲気である。 The hearth box 412 locally captures a gas leak generated at the hearth and discharges it to the outside of the device through the exhaust port 424. The hearth box 412 only needs to be able to exhaust the atmosphere, and unlike the reaction tube 401, it does not have a vacuum level or purge the atmosphere. Therefore, the hearth box has an atmospheric atmosphere.

炉口ボックス４１２内には継手部４１５が内包されている。継手部４１５は図示のように、ガス導入管４０８の上流端と処理ガス搬送管４０９の下流端とを覆うように設けられている。継手部４１５は金属で構成され、各管が連通するように固定する。継手部４１５は主に上方部と下方部の二つの部品で構成される。固定する際は上方部と下方部で各管を挟み込むと共に、ねじ等を用いて上方部と下方部とを固定する。 A joint portion 415 is included in the hearth box 412. As shown in the figure, the joint portion 415 is provided so as to cover the upstream end of the gas introduction pipe 408 and the downstream end of the processing gas transfer pipe 409. The joint portion 415 is made of metal, and each pipe is fixed so as to communicate with each other. The joint portion 415 is mainly composed of two parts, an upper portion and a lower portion. When fixing, sandwich each pipe between the upper part and the lower part, and fix the upper part and the lower part using screws or the like.

尚、図３においては、説明の便宜上、一組のガス導入管４０８と処理ガス搬送管４０９を記載しているが、ガス導入管４０８ａと処理ガス搬送管４０９ａ、ガス導入管４０８ｂと処理ガス搬送管４０９ｂの組み合わせそれぞれで図示の構成とする。それに限るものではなく、いずれか一方の組み合わせのみ図示のような構成としてもよい。 Although a set of gas introduction pipe 408 and processing gas transfer pipe 409 is shown in FIG. 3 for convenience of explanation, the gas introduction pipe 408a, the processing gas transfer pipe 409a, the gas introduction pipe 408b, and the processing gas transfer tube 409 are shown. Each combination of tubes 409b has the configuration shown in the figure. The configuration is not limited to this, and only one combination may be configured as shown in the figure.

続いて継手部４１５とその周辺の構造について説明する。
ガス導入管４０８はマニホールド４０５のＯリング４１６を介してフランジ４０５ａに固定される。ガス導入管４０８の上流端には処理ガス搬送管４０９の下流端が隣接される。処理ガス搬送管４０９は、搬送するガスに対する耐腐食性等を考慮して材質が選択される。例えば金属等で構成される。 Subsequently, the structure of the joint portion 415 and its surroundings will be described.
The gas introduction pipe 408 is fixed to the flange 405a via the O-ring 416 of the manifold 405. The downstream end of the processing gas transfer pipe 409 is adjacent to the upstream end of the gas introduction pipe 408. The material of the processing gas transfer pipe 409 is selected in consideration of corrosion resistance to the transferred gas and the like. For example, it is composed of metal or the like.

ガス導入管４０８と処理ガス搬送管４０９は隙間を介して隣接される。ここではその隙間を有する空間を隣接部４１９と呼ぶ。ガス導入管４０８は前述のように石英や炭化ケイ素等で構成されるが、高温に晒されるため部材が膨張してしまう。そこで遊び部分となる隣接部４１９を設けて、熱による膨張を吸収するよう構成している。なお、隣接部４１９は、第一の処理ガス搬送管４０９ａと第一のガス導入管４０８ａとの間では隣接部４１９ａと呼び、第二の処理ガス搬送管４０９ｂと第二のガス導入管４０８ｂとの間では隣接部４１９ｂと呼ぶ。 The gas introduction pipe 408 and the processing gas transfer pipe 409 are adjacent to each other via a gap. Here, the space having the gap is referred to as an adjacent portion 419. As described above, the gas introduction pipe 408 is made of quartz, silicon carbide, or the like, but the member expands because it is exposed to a high temperature. Therefore, an adjacent portion 419 that serves as a play portion is provided so as to absorb expansion due to heat. The adjacent portion 419 is referred to as an adjacent portion 419a between the first treated gas transfer pipe 409a and the first gas introduction pipe 408a, and the second treated gas transfer pipe 409b and the second gas introduction pipe 408b. It is called an adjacent portion 419b between them.

処理ガス搬送管４０９は金属で構成されるため、同じく金属製の継手部４１５を接触させた状態で固定可能である。一方、ガス導入管４０８は石英等の非金属部材であるため、継手部４１５はＯリング４１７を介して固定する。Ｏリング４１７は、非金属部材であるガス導入管４０８を傷つけにくく更には固定が容易なゴム等の弾性体で構成される。 Since the processing gas transfer pipe 409 is made of metal, it can be fixed in contact with the metal joint portion 415. On the other hand, since the gas introduction pipe 408 is a non-metal member such as quartz, the joint portion 415 is fixed via the O-ring 417. The O-ring 417 is made of an elastic body such as rubber that does not easily damage the gas introduction pipe 408, which is a non-metal member, and is easy to fix.

継手部４１５はフランジ４１５ａを有する。フランジ４１５ａ内にガス導入管４０８を挿入することで、ガス導入管４０８、処理ガス搬送管４０９の中心軸がずれないよう、位置合わせをしている。 The joint portion 415 has a flange 415a. By inserting the gas introduction pipe 408 into the flange 415a, the alignment is performed so that the central axes of the gas introduction pipe 408 and the processing gas transfer pipe 409 do not shift.

ここで、図４を用いて比較例について説明する。図４の構成は、後述する図３に記載のＯリング４１８、圧力調整空間４２０が存在しない。 Here, a comparative example will be described with reference to FIG. In the configuration of FIG. 4, the O-ring 418 and the pressure adjustment space 420 described in FIG. 3, which will be described later, do not exist.

前述のように、継手部４１５は大気雰囲気の炉口ボックス４１２中の空間４１２ａに存在するため、大気成分に晒される。例えば酸素成分に晒される。一方、処理空間４０２は後述する基板処理工程で真空レベルまで減圧される。すなわち、空間４１２ａと処理空間４０２の圧力差が大きくなる。このような状況の中、本発明者は、基板を処理する際に、大気成分がＯリングを透過し、隣接部４１９に侵入してしまうことを発見した。 As described above, since the joint portion 415 exists in the space 412a in the hearth box 412 in the atmospheric atmosphere, it is exposed to atmospheric components. For example, it is exposed to oxygen components. On the other hand, the processing space 402 is depressurized to the vacuum level in the substrate processing step described later. That is, the pressure difference between the space 412a and the processing space 402 becomes large. Under such circumstances, the present inventor has discovered that when the substrate is processed, atmospheric components permeate the O-ring and invade the adjacent portion 419.

鋭意研究の結果、発明者は大気成分の透過性は圧力差と比例することを見出した。ここでは、基板処理中は処理空間の圧力を真空レベルまで低下させる必要があり、そうすると処理空間４０２と連通する隣接部４１９も自ずと圧力が低下される。そのため、空間４１２ａと隣接部４１９との間の圧力差が大きくなり、空間４１２ａの大気成分がＯリング４１７を透過して処理空間４０２に侵入する。具体的には、大気成分中の酸素成分がＯリング４７１を透過して隣接部４１９に侵入する。侵入した大気成分は処理ガスに混入される恐れがある。 As a result of diligent research, the inventor found that the permeability of atmospheric components is proportional to the pressure difference. Here, it is necessary to reduce the pressure in the processing space to the vacuum level during the substrate processing, so that the pressure of the adjacent portion 419 communicating with the processing space 402 is naturally reduced. Therefore, the pressure difference between the space 412a and the adjacent portion 419 becomes large, and the atmospheric component of the space 412a permeates the O-ring 417 and invades the processing space 402. Specifically, the oxygen component in the atmospheric component permeates the O-ring 471 and invades the adjacent portion 419. Invading atmospheric components may be mixed into the processing gas.

処理ガスに酸素成分が混入すると、継手部４１５の周辺やガス導入管４０９の内部でガスが反応してしまうという問題がある。例えば、ガス導入管４０９や隣接部４１９に酸素成分と反応する処理ガスが存在する場合、それらが反応して反応物が生成されてしまう。また、継手部４１５においては、生成された反応物が隣接部４１９等において拡散し、パーティクルの原因となる。また、ガス導入管４０９や隣接部４１９で反応物が生成され堆積されるため、高頻度にクリーニングする必要がある。 When an oxygen component is mixed in the processing gas, there is a problem that the gas reacts around the joint portion 415 or inside the gas introduction pipe 409. For example, when a processing gas that reacts with an oxygen component is present in the gas introduction pipe 409 or the adjacent portion 419, they react with each other to generate a reactant. Further, in the joint portion 415, the generated reactant is diffused in the adjacent portion 419 or the like, which causes particles. Further, since the reactants are generated and deposited in the gas introduction pipe 409 and the adjacent portion 419, it is necessary to clean them frequently.

また、第二の比較例として、Ｏリング４１７を大気成分が透過しにくい材質、たとえば金属にすることが考えられる。金属製の場合、石英等の非金属性材質であるガス導入管４０８を支持しにくかったり、あるいはガス導入管４０８が膨張した場合に、その膨張を吸収できなかったりする。更には、金属製Ｏリングを設ける場合、特別な工具を使用する必要があり、それは作業スペースを確保する必要がある。このような据え付けの観点から考えも、金属製Ｏリングの使用は望ましくない。 Further, as a second comparative example, it is conceivable that the O-ring 417 is made of a material in which atmospheric components are difficult to permeate, for example, metal. In the case of a metal, it may be difficult to support the gas introduction pipe 408 which is a non-metallic material such as quartz, or when the gas introduction pipe 408 expands, the expansion cannot be absorbed. Furthermore, when providing a metal O-ring, it is necessary to use a special tool, which needs to secure a working space. From the viewpoint of such installation, the use of a metal O-ring is not desirable.

そこで、これら問題の少なくとも一つ、あるいはそれらの組み合わせに対応すべく、図３のようにＯリング４１８、圧力調整空間４２０を設けている。以下、Ｏリング４１８、圧力調整空間４２０の詳細について説明する。 Therefore, in order to deal with at least one of these problems or a combination thereof, an O-ring 418 and a pressure adjustment space 420 are provided as shown in FIG. Hereinafter, the details of the O-ring 418 and the pressure adjustment space 420 will be described.

Ｏリング４１８は、Ｏリング４１７を介して、空間４１２ａと隣接部４１９の間に設けられる。本実施形態においては、Ｏリング４１８はフランジ４１５ａとガス導入管４０８との間に設けられる。このような位置に配することで、圧力調整空間４２０を構成すると共に、圧力調整空間４２０と空間４１２ａとを隔離する。 The O-ring 418 is provided between the space 412a and the adjacent portion 419 via the O-ring 417. In this embodiment, the O-ring 418 is provided between the flange 415a and the gas introduction pipe 408. By arranging in such a position, the pressure adjusting space 420 is formed, and the pressure adjusting space 420 and the space 412a are separated from each other.

圧力調整空間４２０は、主にガス導入管４０８の外壁、フランジ４１５ａ、Ｏリング４１７、Ｏリング４１８で囲まれる空間である。 The pressure adjusting space 420 is a space mainly surrounded by the outer wall of the gas introduction pipe 408, the flange 415a, the O-ring 417, and the O-ring 418.

ここでは圧力調整空間４２０、第一のシール部材であるＯリング４１７、第二のシール部材であるＯリング４１８をまとめて圧力調整部と呼ぶ。 Here, the pressure adjustment space 420, the O-ring 417 which is the first seal member, and the O-ring 418 which is the second seal member are collectively referred to as a pressure adjustment unit.

圧力調整空間４２０は隣接部４１９や処理空間４０２と隔離されるため、後述する基板処理工程における処理空間４０２における圧力調整の影響が少ない。したがって、圧力調整空間４２０は炉口ボックス４１２の空間４１２ａと同程度の圧力を維持できる。 Since the pressure adjusting space 420 is isolated from the adjacent portion 419 and the processing space 402, the influence of the pressure adjustment in the processing space 402 in the substrate processing step described later is small. Therefore, the pressure adjusting space 420 can maintain the same pressure as the space 412a of the furnace opening box 412.

圧力調整空間４２０と空間４１２ａとが同程度の圧力なので、空間４１２ａから圧力調整空間４２０に向かう大気成分の流れが抑制される。圧力調整空間４２０の空間に酸素成分が流れないので、隣接部４１９への大気成分の侵入が抑制される。 Since the pressure adjustment space 420 and the space 412a have the same pressure, the flow of atmospheric components from the space 412a to the pressure adjustment space 420 is suppressed. Since the oxygen component does not flow in the space of the pressure adjusting space 420, the invasion of the atmospheric component into the adjacent portion 419 is suppressed.

なお、処理ガス搬送管４０９、ガス導入管４０８、継手部４１５、圧力調整部をまとめてガス供給系と呼ぶ。処理ガス搬送管４０９ａ、ガス導入管４０８ａ、継手部４１５ａ、それに関連する圧力調整部を有するガス供給系を第一ガス供給系と呼ぶ。処理ガス搬送管４０９ｂ、ガス導入管４０８ｂ、継手部４１５ｂ、それに関連する圧力調整部を有するガス供給系を第二ガス供給系と呼ぶ。 The processing gas transfer pipe 409, the gas introduction pipe 408, the joint portion 415, and the pressure adjusting portion are collectively referred to as a gas supply system. A gas supply system having a processing gas transfer pipe 409a, a gas introduction pipe 408a, a joint portion 415a, and a pressure adjusting portion related thereto is referred to as a first gas supply system. A gas supply system having a processing gas transfer pipe 409b, a gas introduction pipe 408b, a joint portion 415b, and a pressure adjusting portion related thereto is referred to as a second gas supply system.

また、圧力調整部は、少なくとも大気成分と反応するガスが搬送されるガス供給系に設けられればよい。例えば、第一ガス供給系で大気成分と反応するガスが搬送され、第二ガス供給系で大気成分と反応しないガスが搬送される場合、少なくとも第一ガス供給系に圧力調整部を設ける。 Further, the pressure adjusting unit may be provided at least in the gas supply system in which the gas that reacts with the atmospheric component is conveyed. For example, when a gas that reacts with an atmospheric component is conveyed in the first gas supply system and a gas that does not react with the atmospheric component is conveyed in the second gas supply system, a pressure adjusting unit is provided at least in the first gas supply system.

（コントローラ）
次に、上述した各部の動作を制御するコントローラ２６０について、図５を用いて説明する。コントローラ２６０は、基板処理装置１０の全体の動作を制御するためのものである。例えばガス供給制御部や排気部がコントローラ２６０によって制御される。 (controller)
Next, the controller 260 that controls the operation of each of the above-mentioned parts will be described with reference to FIG. The controller 260 is for controlling the overall operation of the substrate processing device 10. For example, the gas supply control unit and the exhaust unit are controlled by the controller 260.

図５は、本発明の一実施形態に係る基板処理装置が有するコントローラの構成例を模式的に示すブロック図である。
コントローラ２６０は、ＣＰＵ（ＣｅｎｔｒａｌＰｒｏｃｅｓｓｉｎｇＵｎｉｔ）２６０ａ、ＲＡＭ（ＲａｎｄｏｍＡｃｃｅｓｓＭｅｍｏｒｙ）２６０ｂ、記憶装置２６０ｃ、Ｉ／Ｏポート２６０ｄを備えたコンピュータとして構成されている。ＲＡＭ２６０ｂ、記憶装置２６０ｃ、Ｉ／Ｏポート２６０ｄは、内部バス２６０ｅを介して、ＣＰＵ２６０ａとデータ交換可能なように構成されている。コントローラ２６０には、例えばタッチパネル等として構成された入出力装置２６１や、外部記憶装置２６２が接続可能に構成されている。入出力装置２６１からは、コントローラ２６０に対して情報入力を行い得る。また、入出力装置２６１は、コントローラ２６０の制御に従って情報の表示出力を行うようになっている。さらに、コントローラ２６０には、受信部２８５を通じてネットワーク２６３が接続可能に構成されている。このことは、コントローラ２６０がネットワーク２６３上に存在するホストコンピュータ等の上位装置２９０とも接続可能であることを意味する。 FIG. 5 is a block diagram schematically showing a configuration example of a controller included in the substrate processing apparatus according to the embodiment of the present invention.
The controller 260 is configured as a computer including a CPU (Central Processing Unit) 260a, a RAM (Random Access Memory) 260b, a storage device 260c, and an I / O port 260d. The RAM 260b, the storage device 260c, and the I / O port 260d are configured so that data can be exchanged with the CPU 260a via the internal bus 260e. The controller 260 is configured to be connectable to an input / output device 261 configured as, for example, a touch panel or the like, or an external storage device 262. Information can be input to the controller 260 from the input / output device 261. Further, the input / output device 261 is adapted to display and output information according to the control of the controller 260. Further, the controller 260 is configured to be connectable to the network 263 through the receiving unit 285. This means that the controller 260 can also be connected to a higher-level device 290 such as a host computer existing on the network 263.

記憶装置２６０ｃは、例えばフラッシュメモリ、ＨＤＤ（ＨａｒｄＤｉｓｋＤｒｉｖｅ）等で構成されている。記憶装置２６０ｃ内には、基板処理装置１０の動作を制御する制御プログラムや、基板処理の手順や条件等が記載されたプロセスレシピ、ウエハ１４への処理に用いるプロセスレシピを設定するまでの過程で生じる演算データや処理データ等が、読み出し可能に格納されている。なお、プロセスレシピは、基板処理工程における各手順をコントローラ２６０に実行させ、所定の結果を得ることができるように組み合わされたものであり、プログラムとして機能する。以下、このプロセスレシピや制御プログラム等を総称して、単にプログラムともいう。なお、本明細書においてプログラムという言葉を用いた場合は、プロセスレシピ単体のみを含む場合、制御プログラム単体のみを含む場合、または、その両方を含む場合がある。また、ＲＡＭ２６０ｂは、ＣＰＵ２６０ａによって読み出されたプログラム、演算データ、処理データ等が一時的に保持されるメモリ領域（ワークエリア）として構成されている。 The storage device 260c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 260c, in the process of setting a control program for controlling the operation of the substrate processing apparatus 10, a process recipe describing the procedure and conditions for substrate processing, and a process recipe used for processing on the wafer 14. The generated calculation data, processing data, etc. are stored readable. The process recipes are combined so that the controller 260 can execute each procedure in the substrate processing step and obtain a predetermined result, and functions as a program. Hereinafter, this process recipe, control program, etc. are collectively referred to as a program. When the term program is used in the present specification, it may include only the process recipe alone, the control program alone, or both. Further, the RAM 260b is configured as a memory area (work area) in which a program, arithmetic data, processing data, etc. read by the CPU 260a are temporarily held.

演算部としてのＣＰＵ２６０ａは、記憶装置２６０ｃからの制御プログラムを読み出して実行するとともに、入出力装置２６１からの操作コマンドの入力等に応じて記憶装置２６０ｃからプロセスレシピを読み出すように構成されている。また、受信部２８５から入力された設定値と、記憶装置２６０ｃに記憶されたプロセスレシピや制御データとを比較・演算して、演算データを算出可能に構成されている。また、演算データから対応する処理データ（プロセスレシピ）の決定処理等を実行可能に構成されている。そして、ＣＰＵ２６０ａは、読み出されたプロセスレシピの内容に沿うように、基板処理装置１０における各部に対する動作制御を行うように構成されている。 The CPU 260a as a calculation unit is configured to read and execute a control program from the storage device 260c and read a process recipe from the storage device 260c in response to input of an operation command from the input / output device 261 or the like. Further, the calculated data can be calculated by comparing and calculating the set value input from the receiving unit 285 with the process recipe and control data stored in the storage device 260c. In addition, it is configured to be able to execute the determination process of the corresponding processing data (process recipe) from the calculation data. Then, the CPU 260a is configured to control the operation of each part of the substrate processing apparatus 10 so as to be in line with the contents of the read process recipe.

なお、コントローラ２６０は、専用のコンピュータとして構成されている場合に限らず、汎用のコンピュータとして構成されていてもよい。例えば、上述のプログラムを格納した外部記憶装置（例えば、磁気テープ、フレキシブルディスクやハードディスク等の磁気ディスク、ＣＤやＤＶＤ等の光ディスク、ＭＯ等の光磁気ディスク、ＵＳＢメモリやメモリカード等の半導体メモリ）２６２を用意し、かかる外部記憶装置２６２を用いて汎用のコンピュータにプログラムをインストールすること等により、本実施形態に係るコントローラ２６０を構成することができる。ただし、コンピュータにプログラムを供給するための手段は、外部記憶装置２６２を介して供給する場合に限らない。例えば、ネットワーク２６３（インターネットや専用回線）等の通信手段を用い、外部記憶装置２６２を介さずにプログラムを供給するようにしてもよい。なお、記憶装置２６０ｃや外部記憶装置２６２は、コンピュータ読み取り可能な記録媒体として構成される。以下、これらを総称して、単に記録媒体ともいう。なお、本明細書において、記録媒体という言葉を用いた場合は、記憶装置２６０ｃ単体のみを含む場合、外部記憶装置２６２単体のみを含む場合、または、それらの両方を含む場合がある。 The controller 260 is not limited to the case where it is configured as a dedicated computer, and may be configured as a general-purpose computer. For example, an external storage device (for example, a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or DVD, a magneto-optical disk such as MO, a semiconductor memory such as a USB memory or a memory card) in which the above-mentioned program is stored). The controller 260 according to the present embodiment can be configured by preparing the 262 and installing the program on a general-purpose computer using the external storage device 262. However, the means for supplying the program to the computer is not limited to the case of supplying the program via the external storage device 262. For example, a communication means such as a network 263 (Internet or a dedicated line) may be used to supply the program without going through the external storage device 262. The storage device 260c and the external storage device 262 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium. In the present specification, when the term recording medium is used, it may include only the storage device 260c alone, it may include only the external storage device 262 alone, or it may include both of them.

（基板処理工程）
続いて、本発明の一実施形態に係る基板処理工程について説明する。なお、本実施形態に係る基板処理工程は、例えばＣＶＤ（ＣｈｅｍｉｃａｌＶａｐｏｒＤｅｐｏｓｉｔｉｏｎ）法を用いてウエハ１４の表面に膜を形成する方法であり、半導体装置の製造工程の一工程として実施される。なお、以下の説明において、基板処理装置を構成する各部の動作はコントローラ２６０により制御される。 (Substrate processing process)
Subsequently, the substrate processing step according to the embodiment of the present invention will be described. The substrate processing step according to the present embodiment is a method of forming a film on the surface of the wafer 14 by using, for example, a CVD (Chemical Vapor Deposition) method, and is carried out as one step of a manufacturing process of a semiconductor device. In the following description, the operation of each part constituting the substrate processing device is controlled by the controller 260.

（基板搬入工程Ｓ１０）
基板搬入工程Ｓ１０を説明する。まず、複数枚のウエハ１４を基板支持部３０に装填（ウエハチャージ）する。そして、複数枚のウエハ１４を支持した基板支持部３０を、図示せぬボートエレベータによって持ち上げて処理空間４０２内に搬入（ボートローディング）する。この状態で、シールキャップ４０６はＯリング４０７を介してマニホールド４０５の下端をシールした状態となる。 (Substrate carry-in process S10)
The substrate loading step S10 will be described. First, a plurality of wafers 14 are loaded (wafer charged) into the substrate support portion 30. Then, the substrate support portion 30 that supports the plurality of wafers 14 is lifted by a boat elevator (not shown) and carried into the processing space 402 (boat loading). In this state, the seal cap 406 is in a state where the lower end of the manifold 405 is sealed via the O-ring 407.

（減圧及び昇温工程Ｓ２０）
続いて、減圧及び昇圧工程Ｓ２０を説明する。処理空間４０２内が所望の圧力（真空度）となるように、処理空間４０２内の雰囲気を排気部４１０から排気する。この際、処理空間４０２内の圧力を測定して、この測定された圧力に基づき、排気部４１０に設けられたＡＰＣバルブ４１０ｂの開度をフィードバック制御する。また、処理空間４０２内が所望の温度となるように、ヒータ４１１によって加熱する。この際、処理空間４０２内が所望の温度分布となるように、温度センサが検出した温度情報に基づきヒータ４１１への通電具合をフィードバック制御する。そして、回転機構４０３により基板支持部３０を回転させ、ウエハ１４を回転させる。 (Decompression and temperature rise step S20)
Subsequently, the depressurizing and boosting steps S20 will be described. The atmosphere in the processing space 402 is exhausted from the exhaust unit 410 so that the pressure in the processing space 402 becomes a desired pressure (vacuum degree). At this time, the pressure in the processing space 402 is measured, and the opening degree of the APC valve 410b provided in the exhaust unit 410 is feedback-controlled based on the measured pressure. Further, the inside of the processing space 402 is heated by the heater 411 so as to have a desired temperature. At this time, the state of energization to the heater 411 is feedback-controlled based on the temperature information detected by the temperature sensor so that the inside of the processing space 402 has a desired temperature distribution. Then, the substrate support portion 30 is rotated by the rotation mechanism 403, and the wafer 14 is rotated.

（成膜工程Ｓ３０）
続いて、成膜工程Ｓ３０を説明する。成膜工程では、ウエハ１４上にガスを供給して、所望の膜を形成する。 (Film formation step S30)
Subsequently, the film forming step S30 will be described. In the film forming step, gas is supplied onto the wafer 14 to form a desired film.

本実施形態においては、第一ガス導入管４０８ａから供給される第一の処理ガスとしてヘキサクロロジシラン（Ｓｉ_２Ｃｌ_６。ＨＣＤＳとも呼ぶ。）を用い、第二ガス導入管４０８ｂから供給される第二の処理ガスとしてアンモニア（ＮＨ_３）ガスを用いた例を説明する。 In the present embodiment, hexachlorodisilane (Si ₂ Cl ₆ ; also referred to as HCDS) is used as the first treatment gas supplied from the first gas introduction pipe 408a, and the second gas is supplied from the second gas introduction pipe 408b. An example in which ammonia (NH ₃ ) gas is used as the processing gas of the above will be described.

第一処理ガス搬送管４０９ａ、隣接部４１９ａ、第一ガス導入管４０８ａを介して、処理空間４０２にＨＣＤＳガスを供給する。更には、第二処理ガス搬送管４０９ｂ、隣接部４１９ｂ、第二ガス導入管４０８ｂを介して、処理空間４０２にＮＨ_３ガスを供給する。 HCDS gas is supplied to the processing space 402 via the first processing gas transfer pipe 409a, the adjacent portion 419a, and the first gas introduction pipe 408a. Further, _NH3 gas is supplied to the processing space 402 via the second processing gas transfer pipe 409b, the adjacent portion 419b, and the second gas introduction pipe 408b.

処理空間４０２に供給されたＨＣＤＳガスとＮＨ_３ガスは互いに反応し、ウエハ１４上にシリコン窒化膜を形成する。 The HCDS gas and the _NH3 gas supplied to the processing space 402 react with each other to form a silicon nitride film on the wafer 14.

第一の処理ガスとして酸素と反応するガスを用いたとしても、酸素成分が空間４１２ａから隣接部４１９ａに侵入しないので、第一処理ガス搬送管４０９ａ、隣接部４１９ａ、第一ガス導入管４０８ａにてシリコン酸化膜が生成されることがない。 Even if a gas that reacts with oxygen is used as the first treatment gas, the oxygen component does not enter the adjacent portion 419a from the space 412a, so that the first treatment gas transfer pipe 409a, the adjacent portion 419a, and the first gas introduction pipe 408a are used. No silicon oxide film is formed.

更には、酸素成分が隣接部４１９ｂに侵入しないので、第二ガス導入管４０８ｂから処理空間４０２に酸素成分が侵入することがない。 Further, since the oxygen component does not invade the adjacent portion 419b, the oxygen component does not invade the processing space 402 from the second gas introduction pipe 408b.

（昇圧工程Ｓ４０）
続いて、昇圧工程Ｓ４０を説明する。成膜工程Ｓ３０が終了したら、ＡＰＣバルブ４１０ｂの開度を小さくし、処理空間４０２内の圧力が大気圧になるまで処理空間４０２内にパージガスを供給する。パージガスは、例えばＮ２ガスであり、不活性ガス搬送管４１３ａ、４１３を介して処理空間に供給される。 (Pressure step S40)
Subsequently, the boosting step S40 will be described. When the film forming step S30 is completed, the opening degree of the APC valve 410b is reduced, and the purge gas is supplied into the processing space 402 until the pressure in the processing space 402 reaches atmospheric pressure. The purge gas is, for example, N2 gas, and is supplied to the processing space via the inert gas transfer pipes 413a and 413.

（基板搬出工程Ｓ５０）
続いて基板搬出工程Ｓ５０を説明する。ここでは、基板搬入工程Ｓ１０と逆の手順により、成膜済のウエハ１４を処理空間４０２内から搬出する。 (Substrate carry-out process S50)
Subsequently, the substrate unloading step S50 will be described. Here, the wafer 14 having been film-formed is carried out from the processing space 402 by the reverse procedure of the substrate carrying-in step S10.

（第二の実施形態）
続いて第二の実施形態を、図６を用いて説明する。第二の実施形態は、第一の実施形態と比べてＯリングの配置場所、圧力調整空間を構成する周辺構造が異なる。他の構成は同様であるため説明を省略する。 (Second embodiment)
Subsequently, the second embodiment will be described with reference to FIG. The second embodiment is different from the first embodiment in the arrangement location of the O-ring and the peripheral structure constituting the pressure adjustment space. Since the other configurations are the same, the description thereof will be omitted.

ここでは、図３のフランジ４１５ａに相当する構造がフランジ４１５ｂである。ガス導入管４０８はＯリング４２５で支持される。Ｏリング４２５は、フランジ４０５ａ、継手部４１５の本体部分である本体部４１５ｃとの間で挟まれ固定される。更には、Ｏリング４２５の一部がガス導入管４０８の外壁と接触するよう構成される。Ｏリング４２５とガス導入管４０８が接触されることで、ガス導入管４０８が固定される。 Here, the structure corresponding to the flange 415a in FIG. 3 is the flange 415b. The gas introduction pipe 408 is supported by an O-ring 425. The O-ring 425 is sandwiched and fixed between the flange 405a and the main body portion 415c which is the main body portion of the joint portion 415. Further, a part of the O-ring 425 is configured to come into contact with the outer wall of the gas introduction pipe 408. The gas introduction pipe 408 is fixed by the contact between the O-ring 425 and the gas introduction pipe 408.

フランジ４１５ｂはフランジ４０５ａを覆うように配される。フランジ４１５ｂとフランジ４０５ａとの間には、圧力調整空間４２６を構成するＯリング４２７が設けられる。 The flange 415b is arranged so as to cover the flange 405a. An O-ring 427 constituting a pressure adjusting space 426 is provided between the flange 415b and the flange 405a.

圧力調整空間４２６は、主に継手部４１５、フランジ４０５ａ、Ｏリング４２５、Ｏリング４２７によって構成される。圧力調整空間４２６の圧力は、第一の実施形態と同様に、炉口ボックス４１２の空間４１２ａと同程度となる。したがって、空間４１２ａ中に存在する大気成分が隣接部４１９に侵入することなく、更にはＯリング４２５経由で反応空間４０２に侵入することもない。このようにして、隣接部４１９に加え、より確実に反応室４０２に酸素の侵入を防ぐことができる。 The pressure adjustment space 426 is mainly composed of a joint portion 415, a flange 405a, an O-ring 425, and an O-ring 427. The pressure in the pressure adjusting space 426 is about the same as the space 412a in the hearth box 412, as in the first embodiment. Therefore, the atmospheric component existing in the space 412a does not invade the adjacent portion 419, and further does not invade the reaction space 402 via the O-ring 425. In this way, in addition to the adjacent portion 419, oxygen can be more reliably prevented from entering the reaction chamber 402.

なお、本実施形態においては、圧力調整空間４２６、第一のシール部材であるＯリング４２５、第二のシール部材であるＯリング４２７をまとめて圧力調整部と呼ぶ。 In the present embodiment, the pressure adjustment space 426, the O-ring 425 which is the first seal member, and the O-ring 427 which is the second seal member are collectively referred to as a pressure adjustment unit.

（第三の実施形態）
続いて、図７を用いて第三の実施形態を説明する。図７は一枚ずつウエハを処理する枚葉装置型の基板処理装置５００である。図７において、第一の実施形態と同番号は同様の構成であるため説明を省略する。図７（ａ）は枚葉装置５００の説明図であり、図７（ｂ）は図７（ａ）の点線部分を拡大した説明図である。なお、本装置においてもコントローラを有するが、第一の実施形態のコントローラ２６０と同様の構成であるため、説明を省略する。 (Third embodiment)
Subsequently, the third embodiment will be described with reference to FIG. 7. FIG. 7 is a sheet-fed device type substrate processing device 500 that processes wafers one by one. In FIG. 7, since the same numbers as those in the first embodiment have the same configuration, the description thereof will be omitted. 7 (a) is an explanatory view of the single-wafer device 500, and FIG. 7 (b) is an enlarged explanatory view of a dotted line portion of FIG. 7 (a). Although the present device also has a controller, the description thereof will be omitted because the configuration is the same as that of the controller 260 of the first embodiment.

基板処理装置５００は、ウエハ１４を処理する処理室５０１を有する。ウエハ１４は処理室５０１内に構成される処理空間５０２で処理される。処理室５０１内には、ウエハ１４を支持する基板支持部５０３が配される。基板支持部５０３はヒータ５０４を有し、ウエハ１４はヒータ５０４によって加熱される。ここでは、処理空間５０２を第一空間と呼ぶ。 The substrate processing apparatus 500 has a processing chamber 501 for processing the wafer 14. The wafer 14 is processed in the processing space 502 configured in the processing chamber 501. A substrate support portion 503 that supports the wafer 14 is arranged in the processing chamber 501. The substrate support portion 503 has a heater 504, and the wafer 14 is heated by the heater 504. Here, the processing space 502 is referred to as a first space.

処理室５０１の下方には、排気部４１０が接続される。排気部４１０は、処理空間５０２を所定の圧力に維持するためのＡＰＣ４１０ｂを有する。ＡＰＣ４１０ｂは、基板処理工程において真空レベルまで減圧する。 An exhaust section 410 is connected below the processing chamber 501. The exhaust section 410 has an APC 410b for maintaining the processing space 502 at a predetermined pressure. The APC410b is depressurized to a vacuum level in the substrate processing step.

処理室５０１の側面には、基板搬入出口５０５が設けられる。基板搬入出口５０５はゲートバルブ５０６と隣接する。基板搬入工程、基板搬出工程においてゲートバルブ５０６が解放され、ウエハ１４は基板搬入出口５０５を介して搬入/搬出される。 A substrate carry-in / outlet 505 is provided on the side surface of the processing chamber 501. The board carry-in outlet 505 is adjacent to the gate valve 506. The gate valve 506 is released in the substrate loading process and the substrate unloading process, and the wafer 14 is loaded / unloaded via the substrate loading / unloading port 505.

処理室５０１の天井である天井５０７にはガス導入管４０８が接続される。図７（ｂ）に記載のように、天井５０７には貫通孔５０７ａが設けられ、その周囲にはフランジ５０７ｂが設けられる。ガス導入管４０８は貫通孔５０７ａに挿入される。ガス導入管４０８はＯリング４１６を介してフランジ５０７ｂで支持され、処理室５０１が気密になるよう構成される。 A gas introduction pipe 408 is connected to the ceiling 507, which is the ceiling of the processing chamber 501. As described in FIG. 7B, the ceiling 507 is provided with a through hole 507a, and a flange 507b is provided around the through hole 507a. The gas introduction pipe 408 is inserted into the through hole 507a. The gas introduction pipe 408 is supported by the flange 507b via the O-ring 416, and the processing chamber 501 is configured to be airtight.

ガス導入管４０８は、隣接部４１９を介して処理ガス搬送管４０９に隣接する。処理ガス搬送管４０９は、第一の実施例と同様、不活性ガス導入管４１３、マスフローコントローラ４３１、バルブ４３２等、プロセスの種類に応じて様々な構成が接続される。 The gas introduction pipe 408 is adjacent to the processing gas transfer pipe 409 via the adjacent portion 419. Similar to the first embodiment, the processing gas transfer pipe 409 is connected with various configurations such as an inert gas introduction pipe 413, a mass flow controller 431, and a valve 432 depending on the type of process.

隣接部４１９、処理ガス搬送管４０９、ガス導入管４０８を覆うように継手部４１５が設けられる。ガス導入管４０８はＯリング４１７、Ｏリング４１８を介して継手部４１５に支持される。また、圧力調整空間４２０は、主にガス導入管４０８の外壁、フランジ４１５ａ、Ｏリング４１７、Ｏリング４１８で構成される。 A joint portion 415 is provided so as to cover the adjacent portion 419, the processing gas transfer pipe 409, and the gas introduction pipe 408. The gas introduction pipe 408 is supported by the joint portion 415 via the O-ring 417 and the O-ring 418. Further, the pressure adjusting space 420 is mainly composed of an outer wall of the gas introduction pipe 408, a flange 415a, an O-ring 417, and an O-ring 418.

継手部４１５はガス供給系ボックス５０８内に配される。ガス供給系ボックス５０８は処理室５０１の上方に設けられる。ガス供給系ボックス５０８は、ガスを供給する供給系の構成をまとめて収納するものであり、ガス供給系ボックス５０８の空間５０８ａは大気雰囲気と連通している。ガス供給系ボックス５０８はガス供給系の各構成を収納できればよく、処理室５０１のように真空レベルにしたり、雰囲気をパージしたりすることもない。したがって、空間５０８ａは大気雰囲気である。なお、空間５０８ａは、本実施形態における第二空間である。 The joint portion 415 is arranged in the gas supply system box 508. The gas supply system box 508 is provided above the processing chamber 501. The gas supply system box 508 collectively houses the configuration of the supply system for supplying gas, and the space 508a of the gas supply system box 508 communicates with the atmosphere. The gas supply system box 508 only needs to be able to accommodate each configuration of the gas supply system, and does not have a vacuum level or purge the atmosphere unlike the processing chamber 501. Therefore, the space 508a is an atmospheric atmosphere. The space 508a is the second space in the present embodiment.

圧力調整空間４２０と空間５０８ａとを同程度の圧力とすることで、ガス供給系ボックス５０８の雰囲気が圧力調整空間４２０に侵入することを抑制する。圧力調整空間４２０の空間に酸素成分等の大気雰囲気が侵入しないので、大気成分が隣接部４１９に侵入を抑制する。 By setting the pressure of the pressure adjusting space 420 and the space 508a to the same level, it is possible to prevent the atmosphere of the gas supply system box 508 from entering the pressure adjusting space 420. Since the atmospheric atmosphere such as oxygen components does not enter the space of the pressure adjusting space 420, the atmospheric components suppress the invasion into the adjacent portion 419.

なお、以上の説明においては、第二空間（例えば炉口ボックス４１２の空間４１２ａやガス供給系ボックス５０８の空間５０８ａ）と圧力調整空間４２０（もしくは圧力調整空間４２６）とを同圧にすると説明したが、第二空間の雰囲気が圧力調整空間に移動しない程度の圧力であればよく、必ずしも同圧である必要はない。 In the above description, it has been explained that the second space (for example, the space 412a of the furnace mouth box 412 and the space 508a of the gas supply system box 508) and the pressure adjustment space 420 (or the pressure adjustment space 426) have the same pressure. However, the pressure may be such that the atmosphere of the second space does not move to the pressure adjusting space, and the pressure does not necessarily have to be the same.

なお、以上の説明においては、第二空間を例えば炉口ボックス４１２やス供給系ボックス５０８で構成する例を示したが、継手部が格納された大気雰囲気を構成する容器であればよく、例えば筐体１２の空間であってもよい。圧力調整空間４２０を設けることで、圧力調整空間４２０の外部の第二空間から、隣接部４１９内へのガスの侵入を抑制できる。 In the above description, an example in which the second space is composed of, for example, a hearth box 412 or a space supply system box 508 has been shown, but any container may be used as long as it constitutes an atmospheric atmosphere in which the joint portion is stored, for example. It may be the space of the housing 12. By providing the pressure adjusting space 420, it is possible to suppress the intrusion of gas into the adjacent portion 419 from the second space outside the pressure adjusting space 420.

１４ウエハ
４０１処理室
４０８ガス導入管
４０９処理ガス搬送管
４１２炉口ボックス
４１５継手部
４１７Ｏリング
４１８Ｏリング
４１９隣接部
４２０圧力調整空間 14 Wafer 401 Processing chamber 408 Gas introduction pipe 409 Processing gas transfer pipe 412 Furnace port box
415 Joint part 417 O-ring 418 O-ring 419 Adjacent part 420 Pressure adjustment space

Claims

The board support part that supports the board and
A processing furnace having a first space for processing the substrate, and
An exhaust unit that exhausts the atmosphere of the first space to a vacuum level,
The first gas introduction pipe that supplies the first gas to the first space, the first treatment gas transfer pipe that is communicated with the first gas introduction pipe, and the outside of the first space and at the atmospheric pressure level. In the second space, the first gas introduction pipe and the first treatment gas transfer pipe are configured to be adjacent to each other and cover an adjacent portion having a space, and the first gas introduction pipe and the first treatment gas transfer pipe are formed. A first gas supply system having a joint portion for fixing and a pressure adjusting portion provided between the adjacent portion and the second space.
A second gas supply system having a second gas introduction pipe that supplies a second gas different from the first gas and a second treatment gas transfer pipe that communicates with the second gas introduction pipe in the first space. ,
Equipped with
The joint portion is configured to cover the adjacent portion in the second space outside the first space, and is fixed so as to sandwich the first gas introduction pipe and the first processing gas transfer pipe from above and below. A first flange into which the tip of the first gas introduction pipe is inserted and a main body are provided.
Moreover,
A second flange that supports the processing furnace and is provided on the main body of the manifold through which the first gas introduction pipe is penetrated, is covered by the first flange, and is penetrated by the first gas introduction pipe.
A first O-ring provided between the adjacent portion and the second space and configured to come into contact with the first gas introduction pipe and the second flange.
A second O-ring arranged at a position that does not overlap with the first O-ring in the gas flow direction, and is configured to be in contact with the first flange and the second flange. O-ring and
Substrate processing equipment with .

According to claim 1, the space in which the joint portion is arranged is the second space, and the pressure at the time of processing the substrate is the same between the second space and the pressure adjusting portion. The substrate processing apparatus described.

The board support part that supports the board and
A processing furnace having a first space for processing the substrate, and
An exhaust unit that exhausts the atmosphere of the first space to a vacuum level,
The first gas introduction pipe that supplies the first gas to the first space, the first treatment gas transfer pipe that is communicated with the first gas introduction pipe, and the outside of the first space and at the atmospheric pressure level. In the second space, the first gas introduction pipe and the first treatment gas transfer pipe are configured to be adjacent to each other and cover an adjacent portion having a space, and the first gas introduction pipe and the first treatment gas transfer pipe are formed. A first gas supply system having a joint portion for fixing and a pressure adjusting portion provided between the adjacent portion and the second space.
A second gas supply system having a second gas introduction pipe that supplies a second gas different from the first gas and a second treatment gas transfer pipe that communicates with the second gas introduction pipe in the first space. ,
Equipped with
The joint portion is configured to cover the adjacent portion in the second space outside the first space, and is fixed so as to sandwich the first gas introduction pipe and the first processing gas transfer pipe from above and below. A first flange into which the tip of the first gas introduction pipe is inserted and a main body are provided.
Moreover,
A second flange that supports the processing furnace and is provided on the manifold body through which the first gas introduction pipe is penetrated, is covered by the first flange, and is penetrated by the first gas introduction pipe.
A first O-ring provided between the adjacent portion and the second space and configured to come into contact with the first gas introduction pipe and the second flange.
A second O-ring having a diameter larger than that of the first O-ring, and a second O-ring configured to come into contact with the first flange and the second flange.
Substrate processing equipment with .

The first gas introduction pipe is made of quartz, the first O-ring and the second O-ring are made of an elastic body, and the first gas introduction pipe is supported by the first O-ring. The substrate processing apparatus according to claim 1 or claim 3 .

The substrate processing apparatus according to claim 1 or 3 , wherein the first O-ring is configured to be provided between the first space and the pressure adjusting unit.

The substrate processing apparatus according to any one of claims 1 to 5 , wherein the second gas is a gas that does not react with atmospheric components.

The process of bringing the substrate support part that supports the substrate into the processing furnace having the first space, and
The process of exhausting the atmosphere of the first space to the vacuum level,
The first gas introduction pipe that supplies the first gas to the first space, the first treatment gas transfer pipe that communicates with the first gas introduction pipe, and the outside of the first space and at the atmospheric pressure level. In the second space, the first gas introduction pipe and the first treatment gas transfer pipe are configured to be adjacent to each other and cover an adjacent portion having a space, and the first gas introduction pipe and the first treatment gas transfer pipe are formed. The first gas that reacts with an atmospheric component to generate a reactant from a first gas supply system having a joint portion for fixing the gas and a pressure adjusting portion provided between the adjacent portion and the second space. And the process of supplying
From a second gas supply system having a second gas introduction pipe that supplies a second gas different from the first gas to the first space and a second treatment gas transfer pipe that communicates with the second gas introduction pipe. , The process of supplying the second gas and
Have,
The joint portion is configured to cover the adjacent portion in the second space outside the first space, and is fixed so as to sandwich the first gas introduction pipe and the first processing gas transfer pipe from above and below. A first flange into which the tip of the first gas introduction pipe is inserted and a main body are provided.
Moreover,
A second flange that supports the processing furnace and is provided on the main body of the manifold through which the first gas introduction pipe is penetrated, is covered by the first flange, and is penetrated by the first gas introduction pipe.
A first O-ring provided between the adjacent portion and the second space and configured to come into contact with the first gas introduction pipe and the second flange.
A second O-ring arranged at a position that does not overlap with the first O-ring in the gas flow direction, and is configured to be in contact with the first flange and the second flange. Equipped with an O-ring
Manufacturing method of semiconductor devices.

The process of bringing the substrate support part that supports the substrate into the processing furnace having the first space, and
The process of exhausting the atmosphere of the first space to the vacuum level,
The first gas introduction pipe that supplies the first gas to the first space, the first treatment gas transfer pipe that communicates with the first gas introduction pipe, and the outside of the first space, at the atmospheric pressure level. In the second space, the first gas introduction pipe and the first treatment gas transfer pipe are configured to be adjacent to each other and cover an adjacent portion having a space, and the first gas introduction pipe and the first treatment gas transfer pipe are formed. The first gas that reacts with an atmospheric component to generate a reactant from a first gas supply system having a joint portion for fixing the gas and a pressure adjusting portion provided between the adjacent portion and the second space. And the process of supplying
From a second gas supply system having a second gas introduction pipe that supplies a second gas different from the first gas to the first space and a second treatment gas transfer pipe that communicates with the second gas introduction pipe. , The process of supplying the second gas and
Have,
The joint portion is configured to cover the adjacent portion in the second space outside the first space, and is fixed so as to sandwich the first gas introduction pipe and the first processing gas transfer pipe from above and below. A first flange into which the tip of the first gas introduction pipe is inserted and a main body are provided.
Moreover,
A second flange that supports the processing furnace and is provided on the manifold body through which the first gas introduction pipe is penetrated, is covered by the first flange, and is penetrated by the first gas introduction pipe.
A first O-ring provided between the adjacent portion and the second space and configured to come into contact with the first gas introduction pipe and the second flange.
A second O-ring having a diameter larger than that of the first O-ring and comprising a second O-ring configured to come into contact with the first flange and the second flange. ,
Manufacturing method of semiconductor devices.

The procedure for carrying the substrate support portion that supports the substrate into a processing furnace having a first space, and
The procedure for exhausting the atmosphere of the first space to the vacuum level and
The first gas introduction pipe that supplies the first gas to the first space, the first treatment gas transfer pipe that communicates with the first gas introduction pipe, and the outside of the first space, at the atmospheric pressure level. In the second space, the first gas introduction pipe and the first treatment gas transfer pipe are configured to be adjacent to each other and cover an adjacent portion having a space, and the first gas introduction pipe and the first treatment gas transfer pipe are formed. The first gas that reacts with an atmospheric component to generate a reactant from a first gas supply system having a joint portion for fixing the gas and a pressure adjusting portion provided between the adjacent portion and the second space. And the procedure to supply
From a second gas supply system having a second gas introduction pipe that supplies a second gas different from the first gas to the first space and a second treatment gas transfer pipe that communicates with the second gas introduction pipe. , The procedure for supplying the second gas and
Have,
The joint portion is configured to cover the adjacent portion in the second space outside the first space, and is fixed so as to sandwich the first gas introduction pipe and the first processing gas transfer pipe from above and below. A first flange into which the tip of the first gas introduction pipe is inserted and a main body are provided.
Moreover,
A second flange that supports the processing furnace and is provided on the main body of the manifold through which the first gas introduction pipe is penetrated, is covered by the first flange, and is penetrated by the first gas introduction pipe.
A first O-ring provided between the adjacent portion and the second space and configured to come into contact with the first gas introduction pipe and the second flange.
A second O-ring arranged at a position that does not overlap with the first O-ring in the gas flow direction, and is configured to be in contact with the first flange and the second flange. Equipped with an O-ring
A program that is executed by a computer on a board processing device.

The procedure for carrying the substrate support portion that supports the substrate into a processing furnace having a first space, and
The procedure for exhausting the atmosphere of the first space to the vacuum level and
The first gas introduction pipe that supplies the first gas to the first space, the first treatment gas transfer pipe that communicates with the first gas introduction pipe, and the outside of the first space and at the atmospheric pressure level. In the second space, the first gas introduction pipe and the first treatment gas transfer pipe are configured to be adjacent to each other and cover an adjacent portion having a space, and the first gas introduction pipe and the first treatment gas transfer pipe are formed. The first gas that reacts with an atmospheric component to generate a reactant from a first gas supply system having a joint portion for fixing the gas and a pressure adjusting portion provided between the adjacent portion and the second space. And the procedure to supply
From a second gas supply system having a second gas introduction pipe that supplies a second gas different from the first gas to the first space and a second treatment gas transfer pipe that communicates with the second gas introduction pipe. , The procedure for supplying the second gas and
Have,
The joint portion is configured to cover the adjacent portion in the second space outside the first space, and is fixed so as to sandwich the first gas introduction pipe and the first processing gas transfer pipe from above and below. A first flange into which the tip of the first gas introduction pipe is inserted and a main body are provided.
Moreover,
A second flange that supports the processing furnace and is provided on the manifold body through which the first gas introduction pipe is penetrated, is covered by the first flange, and is penetrated by the first gas introduction pipe.
A first O-ring provided between the adjacent portion and the second space and configured to come into contact with the first gas introduction pipe and the second flange.
A second O-ring having a diameter larger than that of the first O-ring and comprising a second O-ring configured to come into contact with the first flange and the second flange. ,
A program that is executed by a computer on a board processing device.