JP2009124105A - Substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provided a substrate processing apparatus in which undesired loads are not applied to penetration parts of a gas nozzle and a temperature detector even when a reaction tube is inclined. <P>SOLUTION: The substrate processing apparatus includes a reaction tube 47, a substrate holder 35, the gas nozzle 54 used for supplying a processing gas to the processing chamber, a heating unit operative to heat a substrate, a temperature detector 102, and an exhaust unit. The gas nozzle and temperature detector includes first parts 54b and 102b which are inserted into the reaction tube and parallel to a principal surface of the substrate, and second parts 54a and 102a which extend from the first parts in the stacked direction of the substrate along an internal wall surface of the reaction tube, and the gas nozzle and temperature detector are supported by narrow tube supporting members 55 and 112 respectively. Each of the narrow tube supporting members includes first and second parts. The first supporting part abuts on the first part, and the second supporting part is parallel with the second part and supports the second part by engaging the second part at least in three directions. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus for performing processes such as thin film generation, oxidation, impurity diffusion, annealing, and etching on a substrate such as a silicon wafer.

  As the substrate processing apparatus, there are a single-wafer type substrate processing apparatus that processes substrates one by one and a batch type substrate processing apparatus that processes a required number of substrates at a time.

  A batch type substrate processing apparatus has a vertical furnace, and a required number of substrates are stored in a processing chamber of the vertical furnace and processed.

  The reaction tube that defines the processing chamber of the vertical furnace has a cylindrical shape, and includes a heating device arranged so as to surround the reaction tube. In the processing chamber, substrates are held in multiple stages in a horizontal posture by a substrate holder (boat), the processing chamber is depressurized to a predetermined processing pressure, heated to a predetermined temperature, and further exhausted while introducing a processing gas. Thus, the required processing is performed on the substrate surface.

  A gas nozzle for introducing a processing gas into the processing chamber is set up along the wall surface of the reaction tube, and a temperature detector for detecting the temperature of the processing chamber is set up along the wall surface of the reaction tube.

  Conventionally, the gas nozzle and the temperature detector penetrate the lower part of the reaction tube from the horizontal direction, are bent vertically upward, and are provided along the wall of the reaction tube.

  FIG. 14 shows a support structure for a gas nozzle and a temperature detector in a conventional substrate processing apparatus.

  The reaction tube 1 is erected concentrically with a short cylindrical inlet flange 2, and a seal member, for example, an O-ring 3 is interposed between the inlet flange 2 and the reaction tube 1. The joint with the inlet flange 2 is hermetically sealed. The inlet flange 2 is supported by a structural member 4 such as a top plate of a load lock chamber, and an O-ring 5 is interposed between the structural member 4 and the inlet flange 2, and the inlet flange 2 and the structural member 4 is airtightly joined.

  The lower end opening of the inlet flange 2 forms a furnace port 6 from which the boat 7 is loaded into and removed from the processing chamber 8 by a boat elevator (not shown). In the state where the boat 7 is inserted into the processing chamber 8, the furnace port portion 6 is airtightly closed by a seal cap 9.

  In FIG. 14, 11 indicates a gas nozzle, and 12 indicates a temperature detector.

  The temperature detector 12 has a plurality of thermocouples inserted in a quartz protective tube, and each of the plurality of thermocouples has a height inside the protective tube so that temperatures in a plurality of processing chambers can be measured. It is supported so that the position in the direction is different. The gas nozzle 11 is constituted by a quartz tube or the like.

  Both the gas nozzle 11 and the temperature detector 12 bear the vertical load at the inlet flange 2 penetrating portion by the thin tube support members 13 and 14.

  Since the thin tube support member 13 and the thin tube support member 14 have the same structure, the following will describe the thin tube support member 13.

  An inner flange 15 protrudes horizontally from the inner peripheral surface of the lower portion of the inlet flange 2 toward the center, and an adjustment bolt 16 is threaded perpendicularly to the inner flange 15, and the adjustment bolt 16 is fixed by a lock nut 17. Is done. A nozzle receiving flange 18 is provided at the upper end of the adjustment bolt 16, and the nozzle receiving flange 18 comes into contact with the tip of the horizontal portion 11 a of the gas nozzle 11 from below.

  In addition, a flexible sealing ring (not shown) is fitted to the horizontal portion 11a, and the sealing ring is pressure-bonded to the horizontal portion 11a by a fixing tool such as a nut, whereby the horizontal portion The through portion is hermetically sealed, and the horizontal portion 11a is fixed to the inlet flange 2 by a pressing force.

  The support structure for the gas nozzle 11 and the temperature detector 12 in the conventional substrate processing apparatus described above needs to be along the inner wall surface of the reaction tube 1 so that the gas nozzle 11 and the temperature detector 12 do not fall down. There is.

  Accordingly, the height of the nozzle receiving flange 18 is adjusted so that the vertical portion 11 b of the gas nozzle 11 is vertical and along the inner wall surface of the reaction tube 1.

  However, when the pressure inside the reaction tube 1 is reduced, a load in the compression direction is applied to the O-ring 3 and the O-ring 3 is compressed and deformed. Further, when the compressive deformation of the O-ring 3 is not uniform in the circumferential direction, the reaction tube 1 is inclined with respect to the inlet flange 2.

  For this reason, a horizontal load may act on the vertical part of the gas nozzle 11 and the temperature detector 12 provided along the inner wall surface of the reaction tube 1 to damage the penetration part of the inlet flange 2. There is.

  Further, when the pressure in the reaction tube 1 is reduced, a horizontal force in the center direction acts on each horizontal portion of the gas nozzle 11 and the temperature detector 12, and the portion where the inlet flange 2 penetrates each horizontal portion is caused by frictional force. Since they are fixed, the gas nozzle 11 and the temperature detector 12 may shift to the center side. In this case, the vertical portions of the gas nozzle 11 and the temperature detector 12 are separated from the inner wall surface of the reaction tube 1 and the support of the vertical portions becomes unstable.

  In view of such circumstances, the present invention prevents damage even if the reaction tube is tilted so that unnecessary loads do not act on the gas nozzle and temperature sensor through-holes, and ensures that the through-holes are fixed. It is intended to prevent misalignment and to support the gas nozzle and temperature detector reliably and stably.

  The present invention includes a reaction tube that accommodates and processes substrates, a substrate holder that holds a plurality of substrates in a stacked manner at a predetermined interval, and a substrate stacking direction along the substrate stacking direction. A gas nozzle that supplies a desired processing gas; a heating unit that heats the substrate; a temperature detector that is provided along a direction in which the substrates are stacked; and an exhaust unit that exhausts the atmosphere in the reaction tube. The temperature detector is a portion inserted into the reaction tube and is parallel to the main surface of the substrate, and from the first portion along the inner wall surface of the reaction tube in the substrate stacking direction. A second portion extending, and each of the gas nozzle and the temperature detector is supported by a thin tube support member, the thin tube support member having a first support portion and a second support portion, respectively. 1 support part abuts on the first part and The second support part is related to a substrate processing apparatus which is parallel to the second part and is fitted to the second part in at least three directions to support the second part, and the present invention relates to the second part. The support unit relates to a substrate processing apparatus having a concave shape in cross section and parallel to the second part, and the present invention relates to the gas nozzle and the temperature detector as viewed from the insertion direction of the first part. The present invention relates to a substrate processing apparatus in which each back surface and left and right sides of the second portion of the gas nozzle and the temperature detector are supported, and the present invention is such that the reaction tube is erected on a cylindrical inlet flange, and the inlet flange Comprises an inner flange projecting horizontally toward the center, the thin tube support member is provided on the inner flange, the inner flange has a detachable ring seat, and the second support portion is the ring seat. Established Serial first support portion and the adjusting bolt threadedly through the ring seat, provided at the upper end of the adjustment bolt, which relates to a substrate processing apparatus having the thin tube receiving flange in contact with the first site.

  According to the present invention, a reaction tube that accommodates and processes a substrate, a substrate holder that holds a plurality of substrates in a stacked shape at a predetermined interval in the reaction tube, and the reaction tube are provided along the substrate stacking direction. A gas nozzle for supplying a desired processing gas into the tube, a heating means for heating the substrate, a temperature detector provided along the direction in which the substrates are laminated, and an exhaust means for exhausting the atmosphere in the reaction tube, The gas nozzle and the temperature detector are inserted into the reaction tube and are a first part parallel to the main surface of the substrate, and a substrate is laminated from the first part along the inner wall surface of the reaction tube. A second portion extending in a direction, and each of the gas nozzle and the temperature detector is supported by a thin tube support member, and each of the thin tube support members has a first support portion and a second support portion, The first support part contacts the first part The second support part is parallel to the second part and is fitted to the second part in at least three directions to support the second part. Therefore, even when the reaction tube is inclined, the gas nozzle In order to prevent the unnecessary load from acting on the first part of the temperature detector, the gas nozzle, the temperature detector, the inclined gas nozzle or the inner wall of the reaction tube contacting the temperature detector, the substrate, and the substrate holder are prevented from being damaged. In addition, the gas nozzle and the temperature detector can be securely fixed to prevent displacement and disconnection, and the gas nozzle and the temperature detector can be supported reliably and stably.

  According to the present invention, the reaction tube is erected on a cylindrical inlet flange, the inlet flange has an internal flange protruding horizontally toward the center, and the thin tube support member is provided on the internal flange. The inner flange has a detachable ring seat, the second support portion is erected on the ring seat, the first support portion is threaded through the ring seat, an adjustment bolt, Since it has a thin tube receiving flange provided at the upper end and abutting against the first part, it can be provided along the reaction chamber wall surface, and the occupied space can be reduced.

  According to the invention, the internal flange has a detachable ring seat, the second support portion is erected on the ring seat, and the first support portion is an adjustment bolt for threading the ring seat; Since it has the narrow tube receiving flange provided at the upper end of the adjustment bolt and abutting against the first part, the radial inclination of the narrow tube can be accurately adjusted.

  According to the invention, a support member holder is attached to the ring seat, the support member holder has an arc shape concentric with the ring seat, and has at least one standing piece standing vertically, Since the second support portion can be fixed to the upright piece, the vertical receiving portion can be easily attached, the number of parts can be reduced, and the manufacturing cost can be reduced.

  Further, according to the present invention, the ring seat can be fixed to the inner flange from below, and can be attached to and detached from the inner flange with at least the first support portion attached. The work can be reduced and the workability is improved.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  First, referring to FIG. 1, an example of a substrate processing apparatus in which the present invention is implemented will be described.

  In the following description, a case where a vertical substrate processing apparatus that performs oxidation, diffusion processing, CVD processing, or the like is applied to the substrate as the substrate processing apparatus will be described. In FIG. 1, the same components as those shown in FIG. 14 are denoted by the same reference numerals.

  In the substrate processing apparatus 20 according to the present invention, the wafer 21 made of silicon or the like is transported in a state where the wafer is loaded in a cassette 22 as a substrate container.

  In the figure, reference numeral 23 denotes a housing, and a cassette loading / unloading port 24 is opened on the front surface of the housing 23 so as to communicate between the inside and outside of the housing 23. The cassette loading / unloading port 24 has a front shutter ( (Not shown).

  A cassette stage (substrate container delivery table) 25 is installed adjacent to the cassette loading / unloading port 24. The cassette 22 is carried onto the cassette stage 25 by an in-process carrying device (not shown) and unloaded from the cassette stage 25.

  The cassette stage 25 is placed by the in-process transfer device so that the wafer 21 in the cassette 22 is in a vertical posture and the wafer inlet / outlet of the cassette 22 faces upward. The cassette stage 25 can be operated so that the cassette 22 is rotated 90 ° clockwise to the rear of the casing, the wafer 21 in the cassette 22 is in a horizontal posture, and the wafer inlet / outlet of the cassette 22 faces the rear of the casing. It is configured to be.

  A cassette shelf (substrate container mounting shelf) 26 is installed at a substantially central portion in the front-rear direction in the casing 23. The cassette shelf 26 stores a plurality of cassettes 22 in a plurality of rows and a plurality of rows. It is configured to do. The cassette shelf 26 is provided with a transfer shelf 28 in which the cassette 22 to be transferred by the wafer transfer mechanism (substrate transfer mechanism) 27 is stored.

  Further, a preliminary cassette shelf (not shown) is provided above the cassette stage 25, and is configured to store the cassette 22 preliminarily.

  A cassette transfer device (substrate container transfer device) 29 is installed between the cassette stage 25 and the cassette shelf 26. The cassette transport device 29 is composed of a cassette elevator (substrate container lifting mechanism) 31 that can be moved up and down while holding the cassette 22, and a cassette transport mechanism (substrate container transport mechanism) 32 as a horizontal transport mechanism. The cassette 22 is transported between the cassette stage 25, the cassette shelf 26, and the spare cassette shelf (not shown) by the cooperation of the cassette elevator 31 and the cassette transport mechanism 32. Yes.

  The wafer transfer mechanism 27 is installed behind the cassette shelf 26. The wafer transfer mechanism 27 is a wafer transfer device (substrate transfer) capable of rotating and linearly moving the wafer 21 in the horizontal direction. Device) 33 and a wafer transfer device elevator (substrate transfer device lifting mechanism) 34 for moving the wafer transfer device 33 up and down. By the cooperation of the wafer transfer device elevator 34 and the wafer transfer device 33, the wafer 21 is loaded and unloaded from the boat 35.

  A load lock chamber 71 (described later), which is an airtight pressure-resistant container, is provided at the rear of the housing 23, and a processing furnace 37 is provided above the load lock chamber 71. The lower end of the processing furnace 37 is opened, the opening forms a furnace port, and the furnace port is configured to be opened and closed by a furnace port shutter (furnace port opening / closing mechanism) 38.

  Inside the load lock chamber 71, a boat elevator (substrate holder lifting mechanism) 39 is provided as a lifting mechanism that lifts and lowers the boat 35 to and from the processing furnace 37. A boat arm 41 is provided from the boat elevator 39. The boat arm 41 is provided with a seal cap 42 that hermetically closes the furnace port, and the boat 35 is placed vertically on the seal cap 42.

  The boat 35 is made of a material that does not contaminate the wafers 21 such as quartz, and holds the wafers 21 in multiple stages in a horizontal posture.

  Above the cassette shelf 26, a clean unit 43 composed of a supply fan and a dustproof filter is provided so as to supply clean air, which is a cleaned atmosphere, and the clean air is circulated inside the housing 23. It is configured to make it.

  In addition, a clean unit 44 composed of a supply fan and a dustproof filter is installed so as to face the wafer transfer device elevator 34 and supply clean air toward the wafer transfer device elevator 34. Clean air blown out from the unit 44 flows through the wafer transfer device 33 and the boat 35, and then is sucked into an exhaust device (not shown) and exhausted to the outside of the housing 23.

  Next, the operation of the processing apparatus of the present invention will be described.

  The cassette loading / unloading port 24 is opened by a front shutter (not shown). Thereafter, the cassette 22 is loaded from the cassette loading / unloading port 24 and is placed on the cassette stage 25 so that the wafer 21 is in a vertical posture and the wafer loading / unloading port of the cassette 22 faces upward. The cassette stage 25 mounts the cassette 22 such that the wafer 21 in the cassette 22 is in a horizontal posture and the wafer inlet / outlet of the cassette 22 faces the rear of the casing.

  The cassette carrying device 29 carries the cassette 22 to a designated shelf position of the cassette shelf 26 or a spare cassette shelf (not shown). After the cassette 22 is temporarily stored in the cassette shelf 26 or the spare cassette shelf (not shown), the transfer shelf 29 moves the cassette 22 from the cassette shelf 26 or the spare cassette shelf (not shown). Or transferred directly from the cassette stage 25 to the transfer shelf 28.

  When the cassette 22 is transferred to the transfer shelf 28, the wafer 21 is loaded (charged) from the cassette 22 into the boat 35 in the lowered state by the wafer transfer device 33. When the wafer 21 is transferred to the boat 35, the wafer transfer device 33 returns to the cassette 22 and loads the next wafer 21 into the boat 35.

  When a predetermined number of wafers 21 are loaded into the boat 35, the furnace port shutter 38 opens the furnace port. Subsequently, the boat 35 holding the group of wafers 21 is loaded into the processing furnace 37 when the seal cap 42 is lifted by the boat elevator 39.

  After loading, the wafer 21 is subjected to arbitrary processing in the processing furnace 37.

  After the processing, the wafer 21 and the cassette 22 are dispensed to the outside of the housing 23 in the reverse order as described above.

  Next, an example of the processing furnace 37 used in the substrate processing apparatus 20 will be described with reference to FIG.

  The processing furnace 37 has a heater 46 as a heating means. The heater 46 has a cylindrical shape, is composed of a heater wire and a heat insulating member provided around the heater wire, and is vertically installed by being supported by a holding body (not shown).

  A reaction tube 47 is disposed inside the heater 46 concentrically with the heater 46. The reaction tube 47 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened.

  A processing chamber 48 is defined inside the reaction tube 47. The boat 35 is accommodated in the processing chamber 48.

  An inlet flange 49 is disposed below the reaction tube 47 on the same center line. The inlet flange 49 is made of, for example, stainless steel and is formed in a cylindrical shape with an upper end and a lower end opened.

  The inlet flange 49 is provided on the top plate of the load lock chamber 71, and the reaction tube 47 is erected on the inlet flange 49. Note that an O-ring 51 as a seal member is provided between the inlet flange 49 and the reaction tube 47. A reaction vessel is formed by the reaction tube 47 and the inlet flange 49.

  The inlet flange 49 is provided with a gas exhaust pipe 52 and a gas supply pipe 53, and a gas nozzle 54 is connected to the gas supply pipe 53. The gas nozzle 54 includes a vertical portion that extends vertically along the inner wall surface of the reaction tube 47 and a horizontal portion that penetrates the inlet flange 49 horizontally. A lower end portion of the gas nozzle 54 is supported by a thin tube support member 55 attached to the inlet flange 49.

  Although not shown, a temperature detector (described later) for measuring the temperature of the processing chamber 48 penetrates the inlet flange 49 horizontally and extends vertically along the inner wall surface of the reaction tube 47. Is provided.

  The gas supply pipe 53 is divided into three on the upstream side, and the first gas supply source 63 and the second gas supply source are provided via valves 56, 57, 58 and MFCs 59, 60, 61 as gas flow rate control devices. 64 and a third gas supply source 65, respectively.

  A gas flow rate controller 66 is electrically connected to the MFC 59, 60, 61 and the valves 56, 57, 58, and is controlled at a desired timing so that the flow rate of the supplied gas becomes a desired flow rate. It is configured like this.

  A vacuum exhaust device 68 such as a vacuum pump is connected to the downstream side of the gas exhaust pipe 52 via a pressure sensor (not shown) and an APC valve 67 as a pressure regulator. A pressure control unit 69 is electrically connected to the pressure sensor and the APC valve 67, and the pressure control unit 69 adjusts the opening degree of the APC valve 67 based on the pressure detected by the pressure sensor. Thus, the pressure is controlled at a desired timing so that the pressure in the processing chamber 48 becomes a desired pressure.

  The inlet flange 49 is airtightly connected to the upper surface of the load lock chamber 71, and an opening communicating with the inlet flange 49 is formed in the top plate of the load lock chamber 71. The furnace opening 70 is formed with the opening.

  The furnace port 70 is hermetically opened and closed by a seal cap 72. The seal cap 72 is made of a metal such as stainless steel and is formed in a disk shape. On the upper surface of the seal cap 72, an O-ring is provided as a seal member that contacts the lower surface of the furnace port 70.

  The seal cap 72 is provided with a rotation mechanism 73. A rotation shaft 74 of the rotation mechanism 73 passes through the seal cap 72 and is connected to the boat 35, and is configured to rotate the wafer 21 by rotating the boat 35.

  The seal cap 72 is configured to be lifted and lowered in the vertical direction by the boat elevator 39 as a lifting mechanism provided outside the processing furnace 37, thereby mounting the boat 35 to the processing chamber 48. It is possible to take off. A drive control unit 75 is electrically connected to the rotation mechanism 73 and the boat elevator 39, and is configured to control at a desired timing so as to perform a desired operation.

  The boat 35 is made of a heat-resistant material such as quartz or silicon carbide, and is configured to hold a plurality of wafers 21 in a horizontal posture and in a state where the centers are aligned with each other and held in multiple stages. A plurality of heat insulating plates 76 as a disk-shaped heat insulating member made of a heat resistant material such as quartz or silicon carbide are arranged in a multi-stage in a horizontal posture at the lower portion of the boat 35. It is configured such that the heat from the heat does not easily transfer to the inlet flange 49 side.

  A temperature control unit 77 is electrically connected to the heater 46 and the temperature detector, and the processing chamber 48 is adjusted by adjusting the power supply to the heater 46 based on temperature information detected by the temperature detector. The temperature is controlled at a desired timing so as to have a desired temperature distribution.

  In the above-described configuration of the processing furnace 37, the first processing gas is supplied from the first gas supply source 63, the flow rate is adjusted by the MFC 59, and then the gas supply is performed via the valve 56. The pipe 53 introduces the processing chamber 48. The second processing gas is supplied from the second gas supply source 64, the flow rate of which is adjusted by the MFC 60, and then introduced into the processing chamber 48 through the valve 57 through the gas supply pipe 53. The third processing gas is supplied from the third gas supply source 65, and the flow rate thereof is adjusted by the MFC 61. Then, the third processing gas is supplied to the processing chamber 48 from the gas supply pipe 53 and the gas nozzle 54 through the valve 58. be introduced. The gas in the processing chamber 48 is exhausted from the processing chamber 48 by the vacuum exhaust device 68 as an exhaust device connected to the gas exhaust pipe 52.

  Next, the configuration around the processing furnace of the substrate processing apparatus used in the present invention will be described.

  A lower substrate 81 is provided on the outer surface of the load lock chamber 71 as a spare chamber. A guide shaft 83 and a ball screw 84 are erected on the lower substrate 81, and an upper substrate 85 is fixed to the upper ends of the guide shaft 83 and the ball screw 84.

  The elevator 82 is slidably fitted to the guide shaft 83 and is screwed to the ball screw 84. The ball screw 84 is connected to an elevating motor 86 provided on the upper substrate 85, and the elevating table 82 is moved up and down when the ball screw 84 is rotated by the elevating motor 86.

  A hollow elevating shaft 87 is installed in an airtight manner on the elevating table 82, and the elevating shaft 87 moves up and down together with the elevating table 82. The elevating shaft 87 passes through the top plate 88 of the load lock chamber 71, and the through hole of the top plate 88 through which the elevating shaft 87 passes does not allow sufficient contact with the elevating shaft 87. There is.

  A bellows 89 as a hollow elastic body having elasticity is provided between the load lock chamber 71 and the lift 82 so as to cover the periphery of the lift shaft 87 in order to keep the load lock chamber 71 airtight. . The bellows 89 has a sufficient amount of expansion / contraction that can correspond to the amount of elevation of the elevator 82, and the inner diameter of the bellows 89 is sufficiently larger than the outer diameter of the lifting shaft 87 to contact with the expansion / contraction of the bellows 89. It is configured so that there is no.

  The boat arm 41 is horizontally provided at the lower end of the elevating shaft 87.

  The boat arm 41 has a hollow structure, and an upper / lower substrate 91 to which the lower end of the elevator shaft 87 is fixed is provided on the upper surface.

  A drive unit cover 93 is airtightly attached to the lower surface of the elevating substrate 91 via a seal member 92 such as an O-ring. The boat arm 41 is constituted by the drive unit cover 93 and the elevating board 91. With this configuration, the interior of the boat arm 41 is isolated from the atmosphere in the load lock chamber 71.

  Further, the rotation mechanism 73 of the boat 35 is provided inside the boat arm 41, and the periphery of the rotation mechanism 73 is cooled by a cooling mechanism 94.

  A power supply cable 95 is led from the upper end of the elevating shaft 87 through the hollow portion to the rotating mechanism 73 and connected thereto. A cooling flow path 96 is formed in the cooling mechanism 94 and the seal cap 72, and a cooling water pipe 97 for supplying cooling water is connected to the cooling flow path 96 from the upper end of the elevating shaft 87. It passes through the hollow portion of the lifting shaft 87.

  The lift motor 86 is driven, and the ball screw 84 is rotated to move the boat arm 41 up and down via the lift 82 and the lift shaft 87.

  As the boat arm 41 moves up, the boat 35 is inserted into the processing chamber 48 through the furnace port 70, and the seal cap 72 hermetically closes the furnace port 70 to enable wafer processing. Become. Further, when the boat arm 41 is lowered, the boat 35 is lowered. The lowering position of the boat 35 is opposed to the gate valve 98 provided on the side surface of the load lock chamber 71. When the gate valve 98 is opened, the wafer transfer mechanism 27 loads and unloads the wafer. (See FIG. 1).

  The gas flow control unit 66, the pressure control unit 69, the drive control unit 75, and the temperature control unit 77 also constitute an operation unit and an input / output unit, and are electrically connected to a main control unit 99 that controls the entire substrate processing apparatus. Connected. The gas flow rate control unit 66, the pressure control unit 69, the drive control unit 75, the temperature control unit 77, and the main control unit 99 are configured as a controller 100.

  Next, a method for forming an Epi-SiGe film on a substrate such as the wafer 21 using the processing furnace 37 as a step of the semiconductor device manufacturing process will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 100.

  When a predetermined number of wafers 21 are loaded into the boat 35, the boat arm 41 is lifted via the lift 82 and the lift shaft 87 by the rotation of the ball screw 84 by the lift motor 86, and the boat 35. Is charged into the processing chamber 48. In this state, the seal cap 72 hermetically closes the furnace port 70 through an O-ring.

  The processing chamber 48 is evacuated by the evacuation device 68 so as to have a desired pressure (degree of vacuum). At this time, the pressure in the processing chamber 48 is measured by a pressure sensor, and the APC valve 67 is feedback-controlled based on the measured pressure. Further, the processing chamber 48 is heated by the heater 46 so as to reach a desired temperature. At this time, the power supply to the heater 46 is feedback-controlled based on the temperature information detected by the temperature detector so that the processing chamber 48 has a desired temperature distribution. Subsequently, the wafer 21 is rotated by rotating the boat 35 by the rotation mechanism 73.

  The first gas supply source 63, the second gas supply source 64, and the third gas supply source 65 are filled with SiH4, Si2H6, GeH4, and H2, respectively, as processing gases. Each processing gas is supplied from a supply source. After the openings of the MFCs 59, 60, 61 are adjusted so as to obtain a desired flow rate, the valves 56, 57, 58 are opened, and each processing gas flows through the gas supply pipe 53, and the processing is performed. It is introduced into the processing chamber 48 from the upper part of the chamber 48. The introduced gas passes through the processing chamber 48 and is exhausted from the gas exhaust pipe 52. The processing gas comes into contact with the wafer 21 when passing through the processing chamber 48, and an Epi-SiGe film is deposited on the surface of the wafer 21.

  When a preset time elapses, an inert gas is supplied from an inert gas supply source (not shown), the processing chamber 48 is replaced with the inert gas, and the pressure in the processing chamber 48 is returned to normal pressure. The

  Thereafter, the seal cap 72 is lowered by the elevating motor 86 to open the furnace port 70, and the processed wafer 21 is pulled out of the processing chamber 48 while being held by the boat 35. . Thereafter, the gate valve 98 is opened, and the processed wafer 21 is discharged from the boat 35 by the wafer transfer mechanism 27.

  As an example, the processing conditions for processing a wafer by the substrate processing apparatus of the present embodiment are, for example, a processing temperature of 400 ° C. to 700 ° C. and a processing pressure of 1 Pa in the formation of an Epi-SiGe film. ˜200 Pa is exemplified, and the wafer is processed by maintaining each processing condition constant at a certain value within each range.

  As described above, the gas nozzle 54 is provided to introduce the processing gas into the processing chamber 48, and the temperature detector 102 (described later) is provided to detect the temperature of the processing chamber 48. 54, each of the temperature detectors 102 is an L-shaped narrow tube composed of a vertical portion and a horizontal portion, and the horizontal portion penetrates the inlet flange 49, and the inside of the penetrated portion passes through the narrow tube support members 55, 112 ( (To be described later).

  Hereinafter, the structure of the support portion of the gas nozzle 54 and the temperature detector 102 in the first embodiment will be described with reference to FIGS.

  The structure of the support part for the gas nozzle 54 and the temperature detector 102 is substantially the same. First, the structure of the support part for the gas nozzle 54 will be described.

  The gas nozzle 54 is an L-shaped tube made of quartz, and includes a vertical portion 54a extending vertically along the inner wall surface of the reaction tube 47 and a horizontal portion 54b welded horizontally to the lower end of the vertical portion 54a. Have.

  The horizontal portion 54b penetrates the inlet flange 49 horizontally, and is supported by the thin tube support member 55 across the insertion portion of the horizontal portion 54b into the processing chamber 48 and the lower end portion of the vertical portion 54a. Yes.

  The thin tube support member 55 will be described with reference to FIG.

  An inner flange 103 protruding from the inner peripheral surface toward the center is provided at the lower portion of the inlet flange 49, and the thin tube support member 55 is fixed to the inner flange 103 by a bolt 104.

  The thin tube support member 55 is made of Hastelloy, stainless steel, quartz, or SiC, and has a seat portion 105 that contacts the internal flange 103 and a leg portion 106 that is erected along the inlet flange 49. A horizontal receiving portion 107 formed horizontally at the upper end of the leg portion 106, and a vertical receiving portion 108 erected vertically from the inner end (end on the center side) of the horizontal receiving portion 107. It has become.

  The seat portion 105 has a bolt fixing hole 109 for fixing the bolt, and the stopper hole 109 has a shape in which a long hole or a part thereof is cut out so as to be adjustable in the radial direction. The leg portion 106 has a U-shaped cross section for improving the strength. Similarly, the horizontal cross section of the vertical receiving portion 108 is also U-shaped, and the vertical portion 54a of the gas nozzle 54 can be fitted into the concave portion of the cross section without a large backlash.

  Thus, when the insertion portion of the vertical portion 54a, that is, the bottom portion of the gas nozzle 54 is brought into contact with the horizontal receiving portion 107, a vertical load acting on the horizontal portion 54b due to its own weight is applied to the horizontal portion 54b. Supported by the receiving portion 107. Further, the vertical receiving portion 108 supports the two-way tilting of the vertical portion 54a, that is, the tilting toward the center side (radial direction) and the tilting in the circumferential direction. Further, the vertical receiving portion 108 restrains the displacement of the gas nozzle 54 in the center direction, and when the processing chamber 48 is set to a negative pressure, the gas nozzle 54 is displaced in the center direction of the processing chamber 48. To prevent it from coming off.

  Further, a stopper 111 is interposed between the inner peripheral surface of the upper flange 49a of the inlet flange 49 and the vertical portion 54a, and a gap is formed between the vertical portion 54a and the inner wall surface of the reaction tube 47. To do so. The stopper 111 may be provided on the vertical portion 54a or on the upper flange 49a.

  When provided in the vertical portion 54a, the same material as the vertical portion 54a, for example, quartz or SiC, is welded. When the upper flange 49a is provided, the same material as the upper flange 49a may be welded, or a protrusion may be formed on the inner circumference and the entire circumference of the upper flange 49a by machining. .

  The gas nozzle 54 is supported by the narrow tube support member 55 for a vertical load, and is restricted from falling in the radial direction and the circumferential direction. In particular, with respect to the tilting in the radial direction, a gap is formed between the stopper 111 and the reaction tube 47. Therefore, even when the vertical portion 54a is inclined, the vertical portion 54a and the reaction tube 47 are not inclined. When the reaction tube 47 is inclined with respect to the inlet flange 49, the contact between the vertical portion 54a and the reaction tube 47 is similarly avoided. Therefore, the contact between the vertical portion 54a and the reaction tube 47 can prevent the horizontal portion 54b from being loaded, and the horizontal portion 54b can be prevented from being damaged.

  Next, the thin tube support member 112 used in the support portion of the temperature detector 102 will be described with reference to FIG. The thin tube support member 55 and the thin tube support member 112 have the same basic structure, and the same parts are denoted by the same reference numerals.

  The narrow tube used for the temperature detector 102 has an R shape at the boundary between the vertical portion 102a and the horizontal portion 102b so that the thermocouple can be easily inserted and removed. Therefore, the stopper 111 has a shape that matches the lower shape of the temperature detector 102. That is, a part of the horizontal receiving portion 107 is inclined to form an inclined portion 107a, and the inclined portion 107a abuts on the boundary portion, thereby reducing the surface pressure between the horizontal portion 102b and the horizontal receiving portion 107. In addition, the bending load is prevented from being generated at the boundary portion.

  The vertical receiving portion 108 is fitted to the vertical portion 102a, restricts the tilting of the vertical portion 102a in the radial direction and the circumferential direction, and restricts the displacement of the vertical portion 102a in the center direction. Is the same as the thin tube support member 55.

  With reference to FIGS. 6 to 13, the structure of the support portion of the gas nozzle 54 and the temperature detector 102 in the second embodiment will be described.

  First, referring to FIGS. 6 and 8 to 11, the structure of the support portion for the gas nozzle 54 will be described. In addition, the same code | symbol is attached | subjected to the thing equivalent to above-mentioned 1st Embodiment, and the description is abbreviate | omitted.

  As shown in FIG. 6, an inner flange 103 that protrudes from the inner peripheral surface toward the center is provided at the lower portion of the inlet flange 49, and the inner flange 103 has a two-part structure. The inner flange 121 is formed integrally with the inlet flange 49, and a donut ring-shaped ring seat 122 is bolted to the inner flange 121 from below.

  As shown in FIGS. 8 and 9, the A support member holder 123 and the B support member holder 124 are fixed to the ring seat 122 with bolts (not shown). Each of the A support member holder 123 and the B support member holder 124 has an arc shape concentric with the ring seat 122, and has standing pieces 125 bent vertically at predetermined intervals. A semicircular nut relief portion 126 is formed corresponding to the upright piece 125. The ring seat 122, the A support member holder 123, and the B support member holder 124 are each made of Hastelloy or stainless steel.

  A vertical receiving portion 127 is attached to the upright piece 125. The vertical receiving portion 127 is screwed to the lower end portion 127a by a bolt 128 that is inserted horizontally from the center direction, and the lower end portion 127a projects from the head of the bolt 128 toward the center side (center side of the processing chamber 48). It has a concave shape so as not to contact the boat 35. A hole 129 through which the bolt 128 of the vertical receiving portion 127 is inserted is a long hole in the horizontal direction, and the vertical receiving portion 127 can be adjusted in the horizontal direction.

  As shown in FIGS. 10 and 11, the horizontal cross section of the vertical receiving portion 127 has a U-shape, and the vertical portion 54a of the gas nozzle 54 can be fitted into the recess of the cross section without a large backlash. . As shown in FIG. 8, the lower end of the lower end portion 127a is bent at a right angle, and the vertical receiving portion 127 is made vertical by bringing the lower end into contact with the upper surface of the ring seat 122.

  As shown in FIGS. 8 and 9, the adjustment bolt is adjusted to a position that matches the center position of the nut relief portion 126 in a state where the A support member holder 123 and the B support member holder 124 are attached to the ring seat 122. The adjustment screw 16 is threaded through the adjustment bolt screw hole 130. A lock nut 17 is screwed onto the adjustment bolt 16, and the adjustment bolt 16 has a disk-like nozzle receiving flange 18 at the upper end.

  A quartz lower surface seat 131 is fixed to the lower surface of the horizontal portion 54b of the gas nozzle 54 by welding. The lower surface seat 131 has a stopper 132 on the wall surface side of the inlet flange 49, and the stopper 132 can be engaged with the nozzle receiving flange 18.

  The vertical receiving portion 127, the adjustment bolt 16, and the lock nut 17 constitute a thin tube support member 55, and are made of Hastelloy or stainless steel.

  The upper end of the nozzle receiving flange 18 is brought into contact with the lower surface seat 131, the weight of the gas nozzle 54 is supported, and the adjusting bolt 16 is rotated to adjust the position of the nozzle receiving flange 18 to thereby adjust the vertical portion. The radial inclination is adjusted so that 54a is perpendicular to the reaction tube 47 while maintaining an appropriate gap. Further, the vertical receiving portion 127 is fitted to the vertical portion 54a, and the inclination in the circumferential direction is adjusted so that the vertical portion 54a becomes vertical, and is fixed to the standing piece 125 by the bolt 128. The vertical part 54a can be easily adjusted by making its lower end abutted against the upper surface of the ring seat 122. When a plurality of vertical receiving parts 127 are attached, the vertical piece 54a is already positioned. Since it is fixed to 125 with one bolt, workability is good.

  By making the nozzle receiving flange 18 engageable with the stopper 132, it is possible to prevent the gas nozzle 54 from being displaced to the center side or coming off when the processing chamber 48 has a negative pressure. The

  As an assembly procedure of the vertical receiving portion 127, the adjustment bolt 16, the A support member holder 123, and the B support member holder 124 are attached to the ring seat 122 in advance, and the ring seat 122 is attached to the inner flange 121. Install from below.

  The vertical receiving portion 127 is fixed to each of the upright pieces 125 by the bolts 128. In addition, the perpendicular | vertical with respect to the said ring seat 122 of the said vertical receiving part 127 is ensured by pressing the lower end of the said vertical receiving part 127 against the upper surface of the said ring seat 122. FIG.

  By attaching the adjustment bolt 16, the A support member holder 123, and the B support member holder 124 to the ring seat 122 in advance, the work in the narrow processing chamber 48 is reduced and workability is improved.

  Further, by forming the upright piece 125 on the A support member holder 123 and attaching the vertical receiving portion 127 to the upright piece 125, a plurality of the vertical receiving portions 127 can be attached at a small pitch. A plurality of gas nozzles 54 can be provided at narrow intervals.

  Next, in FIG. 7 to FIG. 9, FIG. 12, and FIG. 13, the thin tube support member 112 used for the support portion of the temperature detector 102 will be described.

  The thin tube used for the temperature detector 102 is made of quartz or SiC, and the boundary between the vertical portion 102a and the horizontal portion 102b has an R shape so that the thermocouple can be easily inserted and removed. The lower surface seat 133 is welded over the boundary portion and the horizontal portion 102b. The lower surface seat 133 is made of quartz or SiC made of the same material as the thin tube, and the lower surface is a horizontal plane.

  An adjustment bolt 16 for the temperature detector 102 is threaded through the ring seat 122, and a lock nut 17 is threaded into the adjustment bolt 16. The upper end of the adjustment bolt 16 is in contact with the lower surface of the lower surface seat 133, supports the weight of the temperature detector 102, and adjusts the position of the nozzle receiving flange 18 by rotating the adjustment bolt 16. The inclination in the radial direction of the portion 102a can be adjusted.

  The temperature detector holder 134 will be described with reference to FIGS.

  The temperature detector holder 134 has a seat portion 135 bent in the horizontal direction at the lower end, and is fixed to the upper surface of the ring seat 122 by a bolt 136 that passes through the seat portion 135. The hole 137 through which the bolt 136 is inserted is a long hole extending in the radial direction of the processing chamber 48, and the temperature detector holder 134 can adjust the radial position of the processing chamber 48. .

  The temperature detector holder 134 has a leg portion 138 and a vertical receiving portion 139 continuous with the leg portion 138. The upper end portion of the leg portion 138 and the lower end portion of the vertical receiving portion 139 overlap each other. The horizontal cross section of the vertical receiving portion 139 and the upper end portion of the leg portion 138 have a U-shaped horizontal cross section so that high rigidity can be obtained.

  Further, a notch 141 is formed in the lower portion of the leg portion 138. The notch 141 avoids interference with the nozzle receiving flange 18 and the lock nut 17, and is provided with the temperature detector holder 134 and the adjusting bolt 16. The adjustment bolt 16 can be adjusted in the attached state. Further, a horizontally bent tongue piece 142 is formed on the opposite side of the leg portion 138 from the seat portion 135 so as to suppress the temperature detector holder 134 from falling in the circumferential direction.

  The vertical receiving portion 139 is fitted with the vertical portion 102a of the temperature detector 102 to restrict the tilting in the radial direction and the circumferential direction of the vertical portion 102a and toward the center of the vertical portion 102a. The displacement of is restrained.

  The temperature detector holder 134 and the bolt 136 are made of Hastelloy or stainless steel.

  The temperature detector holder 134, the adjustment bolt 16, and the lock nut 17 constitute a thin tube support member 112.

  When attaching the thin tube support member 112, first, the adjustment bolt 16 screwed with the lock nut 17 is threaded through the ring seat 122, and the ring seat 122 is fixed to the inner flange 121 with a bolt from below. . The adjustment bolt 16 is rotated to bring the nozzle receiving flange 18 into contact with the lower surface seat 133, and the radial inclination of the vertical portion 102a is adjusted. Next, the temperature detector holder 134 is fixed to the upper surface of the ring seat 122 by the bolt 136, and the vertical receiving portion 139 is fitted to the vertical portion 102a to adjust the circumferential inclination of the vertical portion 102a. To do.

  In the thin tube support member 112, the vertical receiving portion 127 may be provided instead of the temperature detector holder 134. In this case, a convex portion similar to the stopper 132 may be formed on the lower surface of the lower surface seat 133 so that the convex portion can be engaged with the nozzle receiving flange 18.

  Further, the support member holder may be provided with a single standing piece 125 provided on the ring seat 122.

(Appendix)
The present invention includes the following embodiments.

  (Supplementary Note 1) A reaction tube that accommodates and processes substrates, a substrate holder that holds a plurality of substrates in a stacked shape at predetermined intervals, and a substrate stacking direction are provided along the substrate stacking direction. A gas nozzle that supplies a desired processing gas; a heating unit that heats the substrate; a temperature detector that is provided along a direction in which the substrates are stacked; and an exhaust unit that exhausts the atmosphere in the reaction tube. The temperature detector is a portion inserted into the reaction tube and is parallel to the main surface of the substrate, and from the first portion along the inner wall surface of the reaction tube in the substrate stacking direction. A second portion extending, and each of the gas nozzle and the temperature detector is supported by a thin tube support member, the thin tube support member having a first support portion and a second support portion, respectively. 1 support part abuts on the first part and The second supporting part substrate processing apparatus characterized by supporting a portion of the second fitted to the second portion at least three sides with a parallel to the second site.

  (Supplementary Note 2) The second support portion has a U-shaped cross section, and the second portion can be fitted therein. The second portion is displaced in the circumferential direction and in the central direction by the second support portion. The substrate processing apparatus according to appendix 1, wherein the displacement of is restricted.

  (Supplementary note 3) The gas nozzle and the temperature detector are supported by the stopper interposed between the processing chamber wall surface and the second portion with a predetermined distance from the processing chamber wall surface. 1. A substrate processing apparatus.

  (Supplementary note 4) The substrate processing apparatus according to supplementary note 1, wherein the gas nozzle support member and the temperature detector support member are made of Hastelloy or stainless steel that are resistant to Cl-containing gas.

  (Supplementary note 5) The substrate processing apparatus according to supplementary note 1, wherein the gas nozzle support member and the temperature detector support member are made of quartz or SiC having corrosion resistance.

  (Supplementary note 6) The substrate processing apparatus according to supplementary note 3, wherein the stopper is made of quartz or SiC.

  (Supplementary note 7) The substrate processing apparatus according to supplementary note 3, wherein the stopper is welded to the gas nozzle and the temperature detector, respectively.

  (Supplementary note 8) The substrate processing apparatus according to supplementary note 1 or 2, wherein the first support part is parallel to the first part, and the first support part and the second support part are integrated.

  (Supplementary note 9) The substrate processing apparatus according to supplementary note 1, wherein the first support part and the second support part have a separated structure, and the first support part is capable of adjusting a support position of the first part in a vertical direction. .

  (Additional remark 10) The said reaction tube is standingly arranged by the cylindrical inlet flange, This inlet flange is equipped with the internal flange which protrudes in a horizontal direction toward the center, and the internal diameter of the said inlet flange is larger than the internal diameter of the said reaction tube The substrate processing apparatus according to appendix 1, wherein the thin tube support member is formed in a crank shape by a leg portion parallel to an inner wall of the inlet flange, the first support portion, and the second support portion.

  (Additional remark 11) It has the seat part extended in a horizontal direction at the lower end of the said thin tube support member, this seat part is fixed to the said internal flange with the volt | bolt, and a bolt through-hole is a shape where a radial direction long hole or one part was notched The substrate processing apparatus according to appendix 10, wherein the position of the thin tube support member is adjustable in the radial direction.

  (Supplementary note 12) The substrate processing apparatus according to supplementary note 1, wherein the thin tube supporting member has an inclined portion that abuts against a bent portion of the thin tube between the first portion and the second portion.

  (Supplementary note 13) The second support part has a seat part at a lower end, the seat part is fixed to the ring seat with a bolt, and the bolt through hole of the seat part is a long hole in the radial direction, 2. The substrate processing apparatus according to appendix 1, wherein the support portion is adjustable in the radial direction.

  (Supplementary note 14) The substrate processing apparatus according to supplementary note 1, wherein a support member holder is fixed to the ring seat, the support member holder has a vertically bent stand piece, and the second support portion is fixed to the stand piece. .

  (Supplementary Note 15) A support member holder is attached to the ring seat, the support member holder has an arc shape concentric with the ring seat, and has at least one standing piece standing vertically, and the standing piece The substrate processing apparatus according to appendix 1, wherein the second support portion can be fixed to the substrate processing apparatus.

  (Supplementary note 16) The substrate processing apparatus according to supplementary note 14, wherein the support member holder has an arc shape concentric with the ring seat, has a plurality of standing pieces, and a plurality of the second support portions can be fixed.

  (Supplementary Note 17) The second support portion is fixed to the upright piece by a bolt, the bolt through hole of the second support portion is a long hole that is long in the horizontal direction, and the position of the second support portion can be adjusted in the horizontal direction. The substrate processing apparatus of appendix 14 thru | or appendix 16.

  (Supplementary note 18) The substrate processing apparatus according to supplementary note 15, wherein the support member holder is attachable to and detachable from the ring seat with a plurality of second support portions attached thereto.

  (Supplementary note 19) The substrate processing apparatus according to supplementary note 15, wherein the ring seat can be fixed to the inner flange from below, and is attachable to and detachable from the inner flange with at least the first support portion attached.

  (Appendix 20) The ring seat can be fixed to the inner flange from below, and can be attached to and detached from the inner flange with the first support portion and the second support portion attached. A substrate processing apparatus according to any one of Supplementary Note 16 and Supplementary Note 18.

  (Supplementary note 21) The substrate processing apparatus according to supplementary note 1, wherein the thin tube support member is any of Hastelloy, stainless steel, quartz, and SiC.

  (Supplementary note 22) The substrate processing apparatus according to supplementary note 16, wherein the support member holder is any of Hastelloy, stainless steel, quartz, and SiC.

1 is a perspective view of a substrate processing apparatus according to an embodiment of the present invention. It is a schematic sectional drawing of the processing furnace in this substrate processing apparatus. It is an expanded sectional view of the furnace port part of this processing furnace. It is a perspective view of the thin tube support member used with this processing furnace. It is a perspective view of the thin tube support member used with this processing furnace. It is sectional drawing of the thin tube support part in the substrate processing apparatus which concerns on the 2nd Embodiment of this invention. It is sectional drawing of the thin tube support part in this substrate processing apparatus. It is a perspective view of the thin tube support part in this substrate processing apparatus. It is a disassembled perspective view of the thin tube support part in this substrate processing apparatus. It is a perspective view of the thin tube support member about the gas nozzle in 2nd Embodiment. It is a back surface perspective view of the thin tube support member about this gas nozzle. It is a perspective view of the thin tube support member about the temperature detector in 2nd Embodiment. It is a back surface perspective view of the thin tube support member about this temperature detector. It is sectional drawing of the furnace port part of the conventional substrate processing apparatus.

Explanation of symbols

21 Wafer 35 Boat 46 Heater 47 Reaction tube 48 Processing chamber 49 Inlet flange 54 Gas nozzle 54a Vertical portion 54b Horizontal portion 55 Thin tube support member 72 Seal cap 102 Temperature detector 103 Internal flange 107 Horizontal receiving portion 107a Inclining portion 108 Vertical receiving portion 111 Stopper DESCRIPTION OF SYMBOLS 112 Thin tube support member 121 Inner collar 122 Ring seat 123 A Support member holder 124 B Support member holder 125 Standing piece 127 Vertical receiving part 134 Temperature detector holder 139 Vertical receiving part 141 Notch

Claims (4)

  A reaction tube for storing and processing a substrate, a substrate holder for holding a plurality of substrates in a stacked manner at a predetermined interval in the reaction tube, and a desired processing gas in the reaction tube. A gas nozzle, a heating means for heating the substrate, a temperature detector provided along the substrate stacking direction, and an exhaust means for exhausting the atmosphere in the reaction tube, the gas nozzle, the temperature detector Is a first portion that is inserted into the reaction tube and is parallel to the main surface of the substrate, and a first portion that extends from the first portion along the inner wall surface of the reaction tube in the stacking direction of the substrate. Each of the gas nozzle and the temperature detector is supported by a thin tube support member, and each of the thin tube support members includes a first support portion and a second support portion, and the first support portion is Abuts on the first part and the second support The substrate processing apparatus characterized by supporting a portion of the second fitted to the second portion at least three sides with a parallel to the second site.   The substrate processing apparatus according to claim 1, wherein the second support portion is parallel to the second portion and has a concave cross section.   2. The back and left and right sides of the gas nozzle and the second part of the temperature detector as viewed from the insertion direction of the first part of the gas nozzle and the temperature detector are supported. Substrate processing equipment.   The reaction tube is erected on a cylindrical inlet flange, the inlet flange has an inner flange protruding in a horizontal direction toward the center, the thin tube support member is provided on the inner flange, and the inner flange is detachable A ring seat, the second support portion is erected on the ring seat, the first support portion is provided on an adjustment bolt threaded through the ring seat, and an upper end of the adjustment bolt, The substrate processing apparatus according to claim 1, further comprising a thin tube receiving flange that abuts against one portion.

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