JPS61122196A - Gas-phase reactor - Google Patents

Abstract

PURPOSE:A gas-jetting means having a plurality of small nozzles are rotatably set so that it faces the surface on which wafers are placed to enable the layer to grow in a uniform thickness. CONSTITUTION:A couple of nozzles 6 is set as a means for jetting out the reaction gases in a vell jar 2. A plurality of small holes 7 are bored on the nozzles 6 in the whole parts opposing to the surface of the susceptor 3. The angle of the nozzles adjusted to the susceptors 3 and wafers 8 are heated through the base 1 and the susceptors 3 with the high-frequency induction coil 4. As the nozzles are allowed to rotate around the axis, the reaction gases are blown from the small holes 7. This mechanism enable the layer of high quality to grow in uniform thickness on the wafer 8.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a vapor phase reactor for vapor phase growth of single crystals.

2. Description of the Related Art As the above-mentioned gas phase reactors, vertical gas phase reactors and barrel-shaped gas phase reactors are most commonly used.

A vertical gas phase reactor has a susceptor placed horizontally in a bell jar, a high-frequency coil placed below the susceptor, and a nozzle for blowing out the reaction gas that passes through the center of the susceptor and coil. The gas phase reaction is carried out while rotating the susceptor relative to the nozzle.

In addition, a barrel-shaped gas phase reactor has a susceptor such as a hexagonal truncated pyramid inside the bell jar, a radiant heating lamp outside the bell jar, and a reactant gas outlet at the top of the bell jar. The gas phase reaction is carried out while rotating the bell jar with respect to the bell jar.

Problems to be Solved by the Invention By the way, in the conventional gas phase reactor as described above, the susceptor is only located in the gas flow of the reaction gas according to the pressure gradient inside the bell jar. A reactive gas is supplied to the wafer being heated by an air flow caused by a pressure gradient. However, the air pressure gradient within the bell jar is generally not uniform, and the airflow due to this air pressure gradient is also not uniform within the bell jar.

For this reason, even if the susceptor rotates relative to the nozzle or belljar, the reactive gas is not uniformly supplied to the wafer, making it impossible to manufacture high-quality products with uniform growth film thickness. .

Means for Solving the Problems A gas phase reaction apparatus according to the present invention has a wafer mounting means 3 having a wafer mounting surface, a large number of small holes 7 facing the wafer mounting surface, and a wafer mounting means 3 having a wafer mounting surface. Each reactor gas blowing means 6 is provided with a reaction gas blowing means 6 rotatable around an axis perpendicular to the plane.

Function: In the gas phase reaction apparatus according to the present invention, the reaction gas blowing means 6 has a large number of small holes 7 facing the wafer mounting surface.

For this reason, the reaction gas is supplied to the wafer 8 placed on the wafer placement surface not by non-uniform airflow but by blowing out from a large number of small holes 7, so that the reaction gas supplied to the wafer is uniform. Very sensitive.

Moreover, since the reactive gas blowing means 6 is rotatable, the reactive gas is supplied to the wafer more uniformly.

EXAMPLE Hereinafter, an example of the present invention will be described with reference to FIGS. 1 and 2.

As shown in FIGS. 1 and 2, in the gas phase reaction apparatus of this embodiment, a base 1 having a chevron-shaped cross section and serving both as a coil cover and a susceptor holder is placed inside a quartz belljar 2. .

A pair of plate-shaped susceptors 3, which are wafer mounting means, are attached to the outer surface of the nearly vertical portion of the base 1, and a spiral-shaped susceptor 3 is attached to the inside of the base 1, at a portion corresponding to the susceptors 3. A high frequency induction coil 4 is attached. Note that two bins 5 are provided near the lower end of each susceptor 3.

Furthermore, a pair of nozzles 6 serving as reaction gas blowing means are disposed within the quartz belljar 2. These nozzles 6 are
It has a large number of small holes 7 facing substantially the entire surface of the susceptor 3, and the angle with respect to the susceptor 6 can be adjusted.
Furthermore, it is rotatable around its axis.

In order to perform a gas phase reaction in the gas phase reaction apparatus of this embodiment as described above, the wafer 8 is first supported by the two pins 5 and the wafer 8 is placed against the susceptor 3. Close to.

Next, the angle of the nozzle 6 with respect to the susceptor 3 is adjusted so that the axis of the nozzle 6 is perpendicular to the susceptor 3. Then, the wafer 8 is heated via the base l and the susceptor 3 by the high-frequency induction coil. In this state, while rotating the nozzle 6 around its axis, the reaction gas and hydrogen gas as a carrier gas are blown out from the small holes 7.

Note that the reacted and unreacted reaction gases and hydrogen gas as a carrier gas are guided downward and discharged from the gap between the quartz bell jar 2 and the base 1.

Effects of the Invention As described above, in the gas phase reaction apparatus according to the present invention, a reaction gas is uniformly supplied to a wafer, so that a high-quality product with a uniform growth film thickness can be manufactured.

[Brief explanation of the drawing]

FIG. 1 is a side sectional view showing one embodiment of the present invention, and FIG. 2 is a sectional view taken along the line Ifn in FIG. 1. In addition, in the symbols used in the drawings, 3・−・−・・・−・−・−Susceptor 6−−−−−
−−−−−−−−−−−−−Nozzle? −−−−−・−
・−・−−−1−−Small hole 8・−−−1−・−−−−・・
-...-11- It is a wafer.

Claims (1)

[Claims] A wafer mounting means having a wafer mounting surface, and a reactive gas blowing means having a large number of small holes facing the wafer mounting surface and rotatable around an axis perpendicular to the wafer mounting surface. Gas phase reactor.