JP2002521817A - 赤外線透過性熱リアクタカバー部材 - Google Patents

赤外線透過性熱リアクタカバー部材

Info

Publication number
JP2002521817A
JP2002521817A JP2000561650A JP2000561650A JP2002521817A JP 2002521817 A JP2002521817 A JP 2002521817A JP 2000561650 A JP2000561650 A JP 2000561650A JP 2000561650 A JP2000561650 A JP 2000561650A JP 2002521817 A JP2002521817 A JP 2002521817A
Authority
JP
Japan
Prior art keywords
cover member
flange
central window
window
curvature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2000561650A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002521817A5 (enExample
Inventor
ロジャー， エヌ． アンダーソン，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2002521817A publication Critical patent/JP2002521817A/ja
Publication of JP2002521817A5 publication Critical patent/JP2002521817A5/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2000561650A 1998-07-23 1999-07-21 赤外線透過性熱リアクタカバー部材 Ceased JP2002521817A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/122,620 US6406543B1 (en) 1998-07-23 1998-07-23 Infra-red transparent thermal reactor cover member
US09/122,620 1998-07-23
PCT/US1999/016583 WO2000005753A1 (en) 1998-07-23 1999-07-21 Infra-red transparent thermal reactor cover member

Publications (2)

Publication Number Publication Date
JP2002521817A true JP2002521817A (ja) 2002-07-16
JP2002521817A5 JP2002521817A5 (enExample) 2010-03-25

Family

ID=22403789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000561650A Ceased JP2002521817A (ja) 1998-07-23 1999-07-21 赤外線透過性熱リアクタカバー部材

Country Status (5)

Country Link
US (1) US6406543B1 (enExample)
EP (1) EP1097470B1 (enExample)
JP (1) JP2002521817A (enExample)
DE (1) DE69934494T2 (enExample)
WO (1) WO2000005753A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003022982A (ja) * 2001-07-09 2003-01-24 Tokyo Electron Ltd 熱処理装置
JP2009200329A (ja) * 2008-02-22 2009-09-03 Denso Corp 半導体製造装置
JP2009266887A (ja) * 2008-04-22 2009-11-12 Sumco Corp 半導体製造装置
JP2010062535A (ja) * 2008-07-16 2010-03-18 Siltronic Ag Ｃｖｄを用いて半導体ウェハに層を堆積させる方法及び前記方法を実施するためのチャンバ
JP2016509751A (ja) * 2013-01-16 2016-03-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 石英の上部ドーム及び下部ドーム
US10119192B2 (en) 2013-03-13 2018-11-06 Applied Materials, Inc. EPI base ring
JP2019145655A (ja) * 2018-02-20 2019-08-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム
JP2020194972A (ja) * 2020-08-12 2020-12-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム
JP2023520217A (ja) * 2020-04-01 2023-05-16 ラム リサーチ コーポレーション 熱エッチングのための急速かつ正確な温度制御

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7763548B2 (en) 2003-08-06 2010-07-27 Micron Technology, Inc. Microfeature workpiece processing system for, e.g., semiconductor wafer analysis
CN103337453B (zh) * 2008-10-07 2017-10-24 应用材料公司 用于从蚀刻基板有效地移除卤素残余物的设备
US8950470B2 (en) 2010-12-30 2015-02-10 Poole Ventura, Inc. Thermal diffusion chamber control device and method
US8097085B2 (en) * 2011-01-28 2012-01-17 Poole Ventura, Inc. Thermal diffusion chamber
US20140083360A1 (en) * 2012-09-26 2014-03-27 Applied Materials, Inc. Process chamber having more uniform gas flow
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
US12134835B2 (en) 2021-09-01 2024-11-05 Applied Materials, Inc. Quartz susceptor for accurate non-contact temperature measurement

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04245420A (ja) * 1990-09-07 1992-09-02 Applied Materials Inc 圧力−熱補償機能を備えたウエハ反応容器窓
JPH04255214A (ja) * 1990-08-16 1992-09-10 Applied Materials Inc 半導体処理の基板加熱装置および方法
JPH05267228A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd 有磁場マイクロ波プラズマ処理装置
JPH07505261A (ja) * 1993-01-21 1995-06-08 ムーア・エピタキシャル・インコーポレイテッド 半導体基板を処理するための高速熱処理反応炉
JPH0855842A (ja) * 1994-03-31 1996-02-27 Applied Materials Inc 裏面を被覆したサセプタを有する半導体ウエ−ハ処理チャンバ
FR2763964A1 (fr) * 1997-05-28 1998-12-04 Sgs Thomson Microelectronics Amelioration du flux gazeux dans un reacteur d'epitaxie

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920918A (en) 1989-04-18 1990-05-01 Applied Materials, Inc. Pressure-resistant thermal reactor system for semiconductor processing
US5194401A (en) 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
US5108792A (en) 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US6099648A (en) 1997-08-06 2000-08-08 Applied Materials, Inc. Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
US5916370A (en) 1998-06-12 1999-06-29 Applied Materials, Inc. Semiconductor processing chamber having diamond coated components

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04255214A (ja) * 1990-08-16 1992-09-10 Applied Materials Inc 半導体処理の基板加熱装置および方法
JPH04245420A (ja) * 1990-09-07 1992-09-02 Applied Materials Inc 圧力−熱補償機能を備えたウエハ反応容器窓
JPH05267228A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd 有磁場マイクロ波プラズマ処理装置
JPH07505261A (ja) * 1993-01-21 1995-06-08 ムーア・エピタキシャル・インコーポレイテッド 半導体基板を処理するための高速熱処理反応炉
JPH0855842A (ja) * 1994-03-31 1996-02-27 Applied Materials Inc 裏面を被覆したサセプタを有する半導体ウエ−ハ処理チャンバ
FR2763964A1 (fr) * 1997-05-28 1998-12-04 Sgs Thomson Microelectronics Amelioration du flux gazeux dans un reacteur d'epitaxie

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003022982A (ja) * 2001-07-09 2003-01-24 Tokyo Electron Ltd 熱処理装置
JP2009200329A (ja) * 2008-02-22 2009-09-03 Denso Corp 半導体製造装置
JP2009266887A (ja) * 2008-04-22 2009-11-12 Sumco Corp 半導体製造装置
JP2010062535A (ja) * 2008-07-16 2010-03-18 Siltronic Ag Ｃｖｄを用いて半導体ウェハに層を堆積させる方法及び前記方法を実施するためのチャンバ
US8283262B2 (en) 2008-07-16 2012-10-09 Siltronic Ag Method for depositing a layer on a semiconductor wafer by means of CVD and chamber for carrying out the method
JP2016509751A (ja) * 2013-01-16 2016-03-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 石英の上部ドーム及び下部ドーム
US10119192B2 (en) 2013-03-13 2018-11-06 Applied Materials, Inc. EPI base ring
KR101931541B1 (ko) * 2013-03-13 2018-12-24 어플라이드 머티어리얼스, 인코포레이티드 Ｅｐｉ 베이스 링
JP2019145655A (ja) * 2018-02-20 2019-08-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム
US11124872B2 (en) 2018-02-20 2021-09-21 Kokusai Electric Corporation Substrate processing apparatus
JP2023520217A (ja) * 2020-04-01 2023-05-16 ラム リサーチ コーポレーション 熱エッチングのための急速かつ正確な温度制御
JP7717717B2 (ja) 2020-04-01 2025-08-04 ラム リサーチ コーポレーション 熱エッチングのための急速かつ正確な温度制御
JP2020194972A (ja) * 2020-08-12 2020-12-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム
JP7038770B2 (ja) 2020-08-12 2022-03-18 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、プログラム

Also Published As

Publication number Publication date
WO2000005753A1 (en) 2000-02-03
US20020046704A1 (en) 2002-04-25
DE69934494D1 (de) 2007-02-01
DE69934494T2 (de) 2007-04-19
EP1097470B1 (en) 2006-12-20
EP1097470A1 (en) 2001-05-09
US6406543B1 (en) 2002-06-18

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