DE69931778T2 - Mehrpunktesonde - Google Patents
Mehrpunktesonde Download PDFInfo
- Publication number
- DE69931778T2 DE69931778T2 DE69931778T DE69931778T DE69931778T2 DE 69931778 T2 DE69931778 T2 DE 69931778T2 DE 69931778 T DE69931778 T DE 69931778T DE 69931778 T DE69931778 T DE 69931778T DE 69931778 T2 DE69931778 T2 DE 69931778T2
- Authority
- DE
- Germany
- Prior art keywords
- probe
- actuator
- proximal end
- movable part
- cylindrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000523 sample Substances 0.000 title abstract description 167
- 230000033001 locomotion Effects 0.000 claims abstract description 31
- 230000008602 contraction Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 32
- 238000012360 testing method Methods 0.000 abstract description 18
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000000313 electron-beam-induced deposition Methods 0.000 abstract description 10
- 238000001465 metallisation Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 6
- 230000001815 facial effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 22
- 238000005259 measurement Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000001247 metal acetylides Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 230000004323 axial length Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 235000011118 potassium hydroxide Nutrition 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06716—Elastic
- G01R1/06727—Cantilever beams
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP99610052A EP1085327B1 (en) | 1999-09-15 | 1999-09-15 | Multi-point probe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69931778D1 DE69931778D1 (de) | 2006-07-20 |
| DE69931778T2 true DE69931778T2 (de) | 2007-06-14 |
Family
ID=8242558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69931778T Expired - Lifetime DE69931778T2 (de) | 1999-09-15 | 1999-09-15 | Mehrpunktesonde |
Country Status (7)
| Country | Link |
|---|---|
| EP (2) | EP1085327B1 (https=) |
| JP (1) | JP4685309B2 (https=) |
| AT (2) | ATE329272T1 (https=) |
| CA (1) | CA2381803A1 (https=) |
| DE (1) | DE69931778T2 (https=) |
| DK (1) | DK1085327T3 (https=) |
| WO (1) | WO2001020347A1 (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2002242148A1 (en) * | 2001-02-06 | 2002-08-19 | Parallel Synthesis Technologies | Microfabricated spotting apparatus for producing low cost microarrays |
| IL162847A0 (en) * | 2002-01-07 | 2005-11-20 | Capres As | Electrical feedback detection system for multi-point probes |
| US6924653B2 (en) | 2002-08-26 | 2005-08-02 | Micron Technology, Inc. | Selectively configurable microelectronic probes |
| EP1780550A1 (en) * | 2005-10-31 | 2007-05-02 | Capres A/S | A probe for testing electrical properties of test samples |
| US7511510B2 (en) * | 2005-11-30 | 2009-03-31 | International Business Machines Corporation | Nanoscale fault isolation and measurement system |
| JP5030624B2 (ja) * | 2007-03-13 | 2012-09-19 | 株式会社ヒューモラボラトリー | 回転式電極子装置 |
| WO2009004721A1 (ja) * | 2007-07-03 | 2009-01-08 | Advantest Corporation | プローブ、プローブカード及びプローブの製造方法 |
| KR101106971B1 (ko) | 2007-07-03 | 2012-01-20 | 가부시키가이샤 아드반테스트 | 프로브 및 프로브 카드 |
| EP2237052A1 (en) * | 2009-03-31 | 2010-10-06 | Capres A/S | Automated multi-point probe manipulation |
| TWI497084B (zh) * | 2010-09-30 | 2015-08-21 | Ismeca Semiconductor Holding | 電性接點及測試平台 |
| EP2677324A1 (en) | 2012-06-20 | 2013-12-25 | Capres A/S | Deep-etched multipoint probe |
| EP3262425B1 (en) | 2015-02-26 | 2025-04-02 | Xallent Inc. | Nano-electro-mechanical-system probes |
| CN111413519B (zh) * | 2015-02-26 | 2023-11-07 | 沙朗特有限责任公司 | 多集成尖端扫描探针显微镜 |
| WO2017156245A1 (en) | 2016-03-09 | 2017-09-14 | Xallent, LLC | Functional prober chip |
| CN105785083B (zh) * | 2016-04-12 | 2019-01-15 | 义乌臻格科技有限公司 | 一种耙状悬臂梁结构的微探针及其制备方法 |
| WO2018187525A1 (en) | 2017-04-06 | 2018-10-11 | Kwame Amponsah | Nanoelectromechanical devices with metal-to-metal contacts |
| US10663484B2 (en) | 2018-02-14 | 2020-05-26 | Xallent, LLC | Multiple integrated tips scanning probe microscope with pre-alignment components |
| US11740279B2 (en) * | 2020-04-24 | 2023-08-29 | Kla Corporation | Measuring temperature-modulated properties of a test sample |
| US20210333228A1 (en) * | 2020-04-24 | 2021-10-28 | Kla Corporation | Micro-Four-Point Metrology of Joule-Heating-Induced Modulation of Test Sample Properties |
| CN114387902B (zh) * | 2022-01-05 | 2024-01-12 | 蚌埠高华电子股份有限公司 | 一种lcd电阻标识测试配合装置及使用方法 |
| CN115015649B (zh) * | 2022-05-27 | 2025-06-27 | 国网智能电网研究院有限公司 | 不规则电压激励下电场分布的计算方法、调控方法及设备 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0078339B1 (de) * | 1981-10-30 | 1986-07-30 | Ibm Deutschland Gmbh | Tastkopfanordnung für Leiterzugüberprüfung mit mindestens einem, eine Vielzahl von federnden Kontakten aufweisenden Tastkopf |
| GB8511169D0 (en) * | 1985-05-02 | 1985-06-12 | Plessey Co Plc | Probes |
| EP0640829B1 (en) * | 1987-08-12 | 2004-11-17 | Olympus Optical Co., Ltd. | Scanning probe microscope |
| JPH081382B2 (ja) * | 1990-10-31 | 1996-01-10 | インターナショナル・ビジネス・マシーンズ・コーポレイション | ナノメートル・スケールのプローブ及びその製造方法 |
| US5172050A (en) * | 1991-02-15 | 1992-12-15 | Motorola, Inc. | Micromachined semiconductor probe card |
| US5347226A (en) * | 1992-11-16 | 1994-09-13 | National Semiconductor Corporation | Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction |
| US5321977A (en) * | 1992-12-31 | 1994-06-21 | International Business Machines Corporation | Integrated tip strain sensor for use in combination with a single axis atomic force microscope |
| JP2875128B2 (ja) * | 1993-01-22 | 1999-03-24 | シャープ株式会社 | 梁およびその製造方法 |
| US5475318A (en) * | 1993-10-29 | 1995-12-12 | Robert B. Marcus | Microprobe |
| JP2599895B2 (ja) * | 1994-06-23 | 1997-04-16 | 山一電機株式会社 | プローブユニットとその製法 |
| DE4440758A1 (de) * | 1994-11-15 | 1996-05-23 | Klocke Volker | Elektromechanische Positioniereinheit |
| JPH08330369A (ja) * | 1995-05-31 | 1996-12-13 | Hewlett Packard Japan Ltd | プローバ用インターフェースカード |
| KR100202998B1 (ko) * | 1995-12-02 | 1999-06-15 | 남재우 | 마이크로 팁을 갖는 웨이퍼 프로브 카드 및 그 제조방법 |
| JP3022312B2 (ja) * | 1996-04-15 | 2000-03-21 | 日本電気株式会社 | プローブカードの製造方法 |
| JPH1019971A (ja) * | 1996-07-04 | 1998-01-23 | Mitsubishi Electric Corp | ロードプル測定システム，ソースプル測定システム，及びインピーダンスチューナ |
-
1999
- 1999-09-15 DE DE69931778T patent/DE69931778T2/de not_active Expired - Lifetime
- 1999-09-15 AT AT99610052T patent/ATE329272T1/de not_active IP Right Cessation
- 1999-09-15 EP EP99610052A patent/EP1085327B1/en not_active Expired - Lifetime
- 1999-09-15 DK DK99610052T patent/DK1085327T3/da active
- 1999-09-15 EP EP06009611A patent/EP1698905B9/en not_active Revoked
- 1999-09-15 AT AT06009611T patent/ATE517352T1/de not_active IP Right Cessation
-
2000
- 2000-09-15 CA CA002381803A patent/CA2381803A1/en not_active Abandoned
- 2000-09-15 WO PCT/DK2000/000513 patent/WO2001020347A1/en not_active Ceased
- 2000-09-15 JP JP2001523882A patent/JP4685309B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1698905B9 (en) | 2012-01-18 |
| WO2001020347A1 (en) | 2001-03-22 |
| DK1085327T3 (da) | 2006-10-09 |
| DE69931778D1 (de) | 2006-07-20 |
| CA2381803A1 (en) | 2001-03-22 |
| EP1698905B1 (en) | 2011-07-20 |
| EP1085327A1 (en) | 2001-03-21 |
| JP2003509695A (ja) | 2003-03-11 |
| EP1698905A2 (en) | 2006-09-06 |
| JP4685309B2 (ja) | 2011-05-18 |
| ATE517352T1 (de) | 2011-08-15 |
| EP1698905A3 (en) | 2007-07-18 |
| ATE329272T1 (de) | 2006-06-15 |
| EP1085327B1 (en) | 2006-06-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |