DE69931629T2 - Aktivpixel-cmos-sensor mit mehreren speicherkondensator - Google Patents

Aktivpixel-cmos-sensor mit mehreren speicherkondensator Download PDF

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Publication number
DE69931629T2
DE69931629T2 DE69931629T DE69931629T DE69931629T2 DE 69931629 T2 DE69931629 T2 DE 69931629T2 DE 69931629 T DE69931629 T DE 69931629T DE 69931629 T DE69931629 T DE 69931629T DE 69931629 T2 DE69931629 T2 DE 69931629T2
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DE
Germany
Prior art keywords
strobe signal
sense
sample
period
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69931629T
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German (de)
English (en)
Other versions
DE69931629D1 (de
Inventor
Jr. Lawrence Phoenix BOOTH
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Intel Corp
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Intel Corp
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Filing date
Publication date
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Publication of DE69931629D1 publication Critical patent/DE69931629D1/de
Application granted granted Critical
Publication of DE69931629T2 publication Critical patent/DE69931629T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE69931629T 1998-04-16 1999-03-03 Aktivpixel-cmos-sensor mit mehreren speicherkondensator Expired - Lifetime DE69931629T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/061,303 US6078037A (en) 1998-04-16 1998-04-16 Active pixel CMOS sensor with multiple storage capacitors
US61303 1998-04-16
PCT/US1999/004582 WO1999054912A1 (en) 1998-04-16 1999-03-03 Active pixel cmos sensor with multiple storage capacitors

Publications (2)

Publication Number Publication Date
DE69931629D1 DE69931629D1 (de) 2006-07-06
DE69931629T2 true DE69931629T2 (de) 2007-05-10

Family

ID=22034925

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69931629T Expired - Lifetime DE69931629T2 (de) 1998-04-16 1999-03-03 Aktivpixel-cmos-sensor mit mehreren speicherkondensator

Country Status (9)

Country Link
US (1) US6078037A (enExample)
EP (1) EP1078390B1 (enExample)
JP (1) JP2002512461A (enExample)
KR (1) KR100379017B1 (enExample)
AU (1) AU2978799A (enExample)
DE (1) DE69931629T2 (enExample)
TW (1) TW421957B (enExample)
WO (1) WO1999054912A1 (enExample)
ZA (1) ZA992744B (enExample)

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JP4744828B2 (ja) 2004-08-26 2011-08-10 浜松ホトニクス株式会社 光検出装置
JP2009153167A (ja) * 2005-02-04 2009-07-09 Canon Inc 撮像装置
JP2007166581A (ja) * 2005-11-16 2007-06-28 Matsushita Electric Ind Co Ltd 高速撮影用固体撮像装置
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US7538304B2 (en) * 2006-03-30 2009-05-26 Aptina Imaging Corporation Reducing noise in an imager by sampling signals with a plurality of capacitances connected to an output line
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US8558929B2 (en) * 2006-12-20 2013-10-15 Carestream Health, Inc. Imaging array for multiple frame capture
JP4778567B2 (ja) * 2007-02-08 2011-09-21 富士通株式会社 信号読み出し方法、信号読み出し回路及びイメージセンサ
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JP6727938B2 (ja) * 2016-06-10 2020-07-22 キヤノン株式会社 撮像装置、撮像装置の制御方法、及び撮像システム
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Also Published As

Publication number Publication date
EP1078390A4 (en) 2001-08-08
JP2002512461A (ja) 2002-04-23
EP1078390A1 (en) 2001-02-28
AU2978799A (en) 1999-11-08
DE69931629D1 (de) 2006-07-06
TW421957B (en) 2001-02-11
US6078037A (en) 2000-06-20
WO1999054912A1 (en) 1999-10-28
KR100379017B1 (ko) 2003-04-08
ZA992744B (en) 2000-10-16
KR20010042768A (ko) 2001-05-25
EP1078390B1 (en) 2006-05-31

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8328 Change in the person/name/address of the agent

Representative=s name: HEYER, V., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 806