KR100379017B1 - 다수의 저장 캐패시터를 구비한 능동 픽셀 시모스 센서 - Google Patents

다수의 저장 캐패시터를 구비한 능동 픽셀 시모스 센서 Download PDF

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Publication number
KR100379017B1
KR100379017B1 KR10-2000-7011502A KR20007011502A KR100379017B1 KR 100379017 B1 KR100379017 B1 KR 100379017B1 KR 20007011502 A KR20007011502 A KR 20007011502A KR 100379017 B1 KR100379017 B1 KR 100379017B1
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South Korea
Prior art keywords
sampling
sampling signal
assertion
photosensitive element
photosensitive
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KR10-2000-7011502A
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Korean (ko)
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KR20010042768A (ko
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부스로랜스쥬니어
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인텔 코오퍼레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
KR10-2000-7011502A 1998-04-16 1999-03-03 다수의 저장 캐패시터를 구비한 능동 픽셀 시모스 센서 Expired - Fee Related KR100379017B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/061,303 1998-04-16
US09/061,303 US6078037A (en) 1998-04-16 1998-04-16 Active pixel CMOS sensor with multiple storage capacitors

Publications (2)

Publication Number Publication Date
KR20010042768A KR20010042768A (ko) 2001-05-25
KR100379017B1 true KR100379017B1 (ko) 2003-04-08

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KR10-2000-7011502A Expired - Fee Related KR100379017B1 (ko) 1998-04-16 1999-03-03 다수의 저장 캐패시터를 구비한 능동 픽셀 시모스 센서

Country Status (9)

Country Link
US (1) US6078037A (enExample)
EP (1) EP1078390B1 (enExample)
JP (1) JP2002512461A (enExample)
KR (1) KR100379017B1 (enExample)
AU (1) AU2978799A (enExample)
DE (1) DE69931629T2 (enExample)
TW (1) TW421957B (enExample)
WO (1) WO1999054912A1 (enExample)
ZA (1) ZA992744B (enExample)

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US7009636B2 (en) * 2001-11-13 2006-03-07 The Board Of Trustees Of The Leland Stanford Junior University Photocurrent estimation from multiple captures for simultaneous SNR and dynamic range improvement in CMOS image sensors
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US7586074B2 (en) * 2003-02-17 2009-09-08 Raytheon Company Multi-mode high capacity dual integration direct injection detector input circuit
US20050157194A1 (en) * 2004-01-06 2005-07-21 Altice Peter P.Jr. Imager device with dual storage nodes
JP4744828B2 (ja) 2004-08-26 2011-08-10 浜松ホトニクス株式会社 光検出装置
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JP2007166581A (ja) * 2005-11-16 2007-06-28 Matsushita Electric Ind Co Ltd 高速撮影用固体撮像装置
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JP2008042826A (ja) * 2006-08-10 2008-02-21 Matsushita Electric Ind Co Ltd 固体撮像素子およびカメラ
US8558929B2 (en) * 2006-12-20 2013-10-15 Carestream Health, Inc. Imaging array for multiple frame capture
JP4778567B2 (ja) * 2007-02-08 2011-09-21 富士通株式会社 信号読み出し方法、信号読み出し回路及びイメージセンサ
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US9052497B2 (en) 2011-03-10 2015-06-09 King Abdulaziz City For Science And Technology Computing imaging data using intensity correlation interferometry
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KR102591008B1 (ko) * 2016-05-23 2023-10-19 에스케이하이닉스 주식회사 이미지 센서
JP6727938B2 (ja) * 2016-06-10 2020-07-22 キヤノン株式会社 撮像装置、撮像装置の制御方法、及び撮像システム
DE102016212765A1 (de) * 2016-07-13 2018-01-18 Robert Bosch Gmbh Pixeleinheit für einen Bildsensor, Bildsensor, Verfahren zum Sensieren eines Lichtsignals, Verfahren zum Ansteuern einer Pixeleinheit und Verfahren zum Generieren eines Bildes unter Verwendung einer Pixeleinheit
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Also Published As

Publication number Publication date
EP1078390A4 (en) 2001-08-08
JP2002512461A (ja) 2002-04-23
EP1078390A1 (en) 2001-02-28
AU2978799A (en) 1999-11-08
DE69931629D1 (de) 2006-07-06
TW421957B (en) 2001-02-11
US6078037A (en) 2000-06-20
WO1999054912A1 (en) 1999-10-28
ZA992744B (en) 2000-10-16
KR20010042768A (ko) 2001-05-25
DE69931629T2 (de) 2007-05-10
EP1078390B1 (en) 2006-05-31

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