DE69525535T2 - Adaptiver optischer Sensor - Google Patents

Adaptiver optischer Sensor

Info

Publication number
DE69525535T2
DE69525535T2 DE69525535T DE69525535T DE69525535T2 DE 69525535 T2 DE69525535 T2 DE 69525535T2 DE 69525535 T DE69525535 T DE 69525535T DE 69525535 T DE69525535 T DE 69525535T DE 69525535 T2 DE69525535 T2 DE 69525535T2
Authority
DE
Germany
Prior art keywords
optical sensor
adaptive optical
adaptive
sensor
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525535T
Other languages
English (en)
Other versions
DE69525535D1 (de
Inventor
Alfredo Tomasini
Gianluca Colli
Ernestina Chioffi
Danilo Gerna
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69525535D1 publication Critical patent/DE69525535D1/de
Publication of DE69525535T2 publication Critical patent/DE69525535T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69525535T 1995-11-21 1995-11-21 Adaptiver optischer Sensor Expired - Fee Related DE69525535T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830485A EP0777379B1 (de) 1995-11-21 1995-11-21 Adaptiver optischer Sensor

Publications (2)

Publication Number Publication Date
DE69525535D1 DE69525535D1 (de) 2002-03-28
DE69525535T2 true DE69525535T2 (de) 2002-11-28

Family

ID=8222060

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525535T Expired - Fee Related DE69525535T2 (de) 1995-11-21 1995-11-21 Adaptiver optischer Sensor

Country Status (3)

Country Link
US (1) US5978025A (de)
EP (1) EP0777379B1 (de)
DE (1) DE69525535T2 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3918248B2 (ja) * 1997-09-26 2007-05-23 ソニー株式会社 固体撮像素子およびその駆動方法
US6369853B1 (en) * 1997-11-13 2002-04-09 Foveon, Inc. Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications
US6452633B1 (en) 1998-02-26 2002-09-17 Foveon, Inc. Exposure control in electronic cameras by detecting overflow from active pixels
US6069376A (en) * 1998-03-26 2000-05-30 Foveonics, Inc. Intra-pixel frame storage element, array, and electronic shutter method including speed switch suitable for electronic still camera applications
US6160282A (en) * 1998-04-21 2000-12-12 Foveon, Inc. CMOS image sensor employing silicide exclusion mask to reduce leakage and improve performance
US6580455B1 (en) * 1998-05-05 2003-06-17 Pixart Technology, Inc. High definition image sensor
US6512544B1 (en) 1998-06-17 2003-01-28 Foveon, Inc. Storage pixel sensor and array with compression
US6410899B1 (en) 1998-06-17 2002-06-25 Foveon, Inc. Active pixel sensor with bootstrap amplification and reduced leakage during readout
US6097022A (en) * 1998-06-17 2000-08-01 Foveon, Inc. Active pixel sensor with bootstrap amplification
US6054704A (en) * 1998-06-30 2000-04-25 Foveon, Inc. Driven capacitor storage pixel sensor and array
US6512858B2 (en) 1998-07-21 2003-01-28 Foveon, Inc. Image scanning circuitry with row and column addressing for use in electronic cameras
FR2781929B1 (fr) * 1998-07-28 2002-08-30 St Microelectronics Sa Capteur d'image a reseau de photodiodes
US6246043B1 (en) 1998-09-22 2001-06-12 Foveon, Inc. Method and apparatus for biasing a CMOS active pixel sensor above the nominal voltage maximums for an IC process
US6803958B1 (en) 1999-03-09 2004-10-12 Micron Technology, Inc. Apparatus and method for eliminating artifacts in active pixel sensor (APS) imagers
DE19922650A1 (de) * 1999-05-18 2000-11-23 Philips Corp Intellectual Pty Sensormatrix
US6697114B1 (en) 1999-08-13 2004-02-24 Foveon, Inc. Triple slope pixel sensor and arry
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6809768B1 (en) 2000-02-14 2004-10-26 Foveon, Inc. Double slope pixel sensor and array
US6882367B1 (en) 2000-02-29 2005-04-19 Foveon, Inc. High-sensitivity storage pixel sensor having auto-exposure detection
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6952226B2 (en) * 2000-12-22 2005-10-04 Texas Instruments Incorporated Stray-insensitive, leakage-independent image sensing with reduced sensitivity to device mismatch and parasitic routing capacitance
FR2820882B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodetecteur a trois transistors
FR2820883B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodiode a grande capacite
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
FR2824665B1 (fr) * 2001-05-09 2004-07-23 St Microelectronics Sa Photodetecteur de type cmos
US20020181826A1 (en) * 2001-06-01 2002-12-05 Motorola, Inc. Structure and method for fabricating a high-speed interface in semiconductor structures
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
FR2846490B1 (fr) * 2002-10-24 2005-01-14 Suisse Electronique Microtech Systeme d'analyse spatiale d'une grandeur physique
EP1463306B8 (de) * 2003-03-25 2009-11-11 Panasonic Corporation Bildaufnahmevorrichtung, die Detailverlust schattiger Bereiche vermeidet
JP4144535B2 (ja) * 2004-03-03 2008-09-03 ソニー株式会社 固体撮像装置、画素信号読出方法
DE102004035494A1 (de) * 2004-07-22 2006-02-09 Giesecke & Devrient Gmbh Vorrichtung und Verfahren zur Prüfung von Wertdokumenten
US7624080B1 (en) 2005-02-25 2009-11-24 The United States Of America As Represented By The Secretary Of The Navy Smart sensor continuously adapting to a data stream in real time using both permanent and temporary knowledge bases to recognize sensor measurements
US8558929B2 (en) * 2006-12-20 2013-10-15 Carestream Health, Inc. Imaging array for multiple frame capture
KR101700363B1 (ko) * 2010-09-08 2017-01-26 삼성전자주식회사 적절한 밝기를 갖는 입체 영상을 생성하는 디지털 영상 촬영 장치 및 이의 제어 방법
US9052497B2 (en) 2011-03-10 2015-06-09 King Abdulaziz City For Science And Technology Computing imaging data using intensity correlation interferometry
US9099214B2 (en) 2011-04-19 2015-08-04 King Abdulaziz City For Science And Technology Controlling microparticles through a light field having controllable intensity and periodicity of maxima thereof
US11182670B2 (en) * 2017-11-16 2021-11-23 International Business Machines Corporation Thin-film large-area classifier
CN111366534A (zh) * 2020-02-28 2020-07-03 天津大学 用于混浊水中主动视觉测量的激光光强自适应调节方法
DE102020113512A1 (de) 2020-05-19 2021-11-25 Ifm Electronic Gmbh Kapazitive Sensorschaltung mit Sende- und Empfangselektrode und Verfahren zum Betreiben einer solchen
CN114187870B (zh) * 2020-09-14 2023-05-09 京东方科技集团股份有限公司 光电检测电路及其驱动方法、显示装置及其制作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4479062A (en) * 1981-02-06 1984-10-23 Asahi Kogaku Kogyo Kabushiki Kaisha Photo-electric conversion device with accumulation time control
JPS57190469A (en) * 1981-05-19 1982-11-24 Victor Co Of Japan Ltd Solid state image pickup plate
US4775798A (en) * 1985-05-30 1988-10-04 Thomson-Csf Device for detection with time delay and phase integration
EP0576104B1 (de) * 1985-11-15 1998-02-25 Canon Kabushiki Kaisha Photoelektrische Wandlervorrichtung
US5576762A (en) * 1990-11-07 1996-11-19 Canon Kabushiki Kaisha Solid-state image pickup device
DE4118154A1 (de) * 1991-06-03 1992-12-10 Philips Patentverwaltung Anordnung mit einer sensormatrix und einer ruecksetzanordnung
EP0616464B1 (de) * 1993-03-15 1999-06-02 Canon Kabushiki Kaisha Signalprozessor
JPH0767152B2 (ja) * 1993-03-25 1995-07-19 日本電気株式会社 イメージセンサとその駆動方法
JP3278243B2 (ja) * 1993-06-18 2002-04-30 キヤノン株式会社 光電変換装置
ES2211937T3 (es) * 1995-08-02 2004-07-16 Canon Kabushiki Kaisha Dispositivo sensor de imagenes de estado solido con linea de salida comun.
US5781233A (en) * 1996-03-14 1998-07-14 Tritech Microelectronics, Ltd. MOS FET camera chip and methods of manufacture and operation thereof

Also Published As

Publication number Publication date
DE69525535D1 (de) 2002-03-28
US5978025A (en) 1999-11-02
EP0777379A1 (de) 1997-06-04
EP0777379B1 (de) 2002-02-20

Similar Documents

Publication Publication Date Title
DE69525535T2 (de) Adaptiver optischer Sensor
DE59609158D1 (de) Optischer abstandssensor
FI953888A (fi) Anturi
DE59700293D1 (de) Optischer sensor
DE69531483D1 (de) Optisches Abtastgerät
DK0762143T3 (da) Chromatisk optisk afstandsføler
DE69637258D1 (de) Elektrooptischer Sensor
BR9607782A (pt) Disposição de sensor
DE69529116D1 (de) Optischer Verschiebungssensor
BR9609682A (pt) Foto-desinfetantes de baixa nuança
DE69630654D1 (de) Optischer Abtaster
DE59608120D1 (de) Positionssensor
DE69619850D1 (de) Sensoranordnung
DE69630275D1 (de) Nichtinvasiver optischer Sensor
DE69600298D1 (de) Optisches Abtastgerät
DE69625867D1 (de) Optisches Abtastgerät
DE69636205D1 (de) Optischer Abtaster
DE69528866T2 (de) Optischer Sensor
DE69527498T2 (de) Optischer Sensor
DE69626256T2 (de) Optisches Gerät
DE69528208D1 (de) Optischer Verschiebungssensor
DE59600923D1 (de) Sensoranordnung
DE69626748T2 (de) Optischer Scanner
PT839024E (pt) Formulacoes de monensina
DK0811279T3 (da) Dæmpningsfri optisk forbindelse

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee