DE69911869T2 - Toroidförmiges Filament zur Plasmaerzeugung - Google Patents
Toroidförmiges Filament zur Plasmaerzeugung Download PDFInfo
- Publication number
- DE69911869T2 DE69911869T2 DE69911869T DE69911869T DE69911869T2 DE 69911869 T2 DE69911869 T2 DE 69911869T2 DE 69911869 T DE69911869 T DE 69911869T DE 69911869 T DE69911869 T DE 69911869T DE 69911869 T2 DE69911869 T2 DE 69911869T2
- Authority
- DE
- Germany
- Prior art keywords
- filament
- plasma
- arc chamber
- ion
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 30
- 210000002414 leg Anatomy 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 238000010884 ion-beam technique Methods 0.000 description 11
- 210000000689 upper leg Anatomy 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
- H05H1/20—Ohmic heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/15—Cathodes heated directly by an electric current
- H01J1/16—Cathodes heated directly by an electric current characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/130,662 US6204508B1 (en) | 1998-08-07 | 1998-08-07 | Toroidal filament for plasma generation |
| US130662 | 1998-08-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69911869D1 DE69911869D1 (de) | 2003-11-13 |
| DE69911869T2 true DE69911869T2 (de) | 2004-08-19 |
Family
ID=22445746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69911869T Expired - Fee Related DE69911869T2 (de) | 1998-08-07 | 1999-08-05 | Toroidförmiges Filament zur Plasmaerzeugung |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6204508B1 (https=) |
| EP (1) | EP0980088B1 (https=) |
| JP (1) | JP2000077005A (https=) |
| KR (1) | KR100479372B1 (https=) |
| DE (1) | DE69911869T2 (https=) |
| SG (1) | SG74159A1 (https=) |
| TW (1) | TW430853B (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100672835B1 (ko) * | 2001-05-21 | 2007-01-22 | 삼성전자주식회사 | 이온 임플랜터의 이온 발생 장치 |
| JP3842159B2 (ja) | 2002-03-26 | 2006-11-08 | 株式会社半導体エネルギー研究所 | ドーピング装置 |
| KR100505040B1 (ko) * | 2003-12-19 | 2005-07-29 | 삼성전자주식회사 | 이온 소스 및 이를 갖는 이온 주입 장치 |
| US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
| KR100706799B1 (ko) * | 2005-10-07 | 2007-04-12 | 삼성전자주식회사 | 필라멘트 부재 및 이를 가지는 이온 주입 장치의 이온 소스 |
| JP2010153095A (ja) * | 2008-12-24 | 2010-07-08 | Showa Shinku:Kk | イオンガン |
| JP6219594B2 (ja) * | 2013-05-15 | 2017-10-25 | Hoya株式会社 | 薄膜形成装置、及び薄膜形成方法 |
| US9070538B2 (en) * | 2013-10-25 | 2015-06-30 | Varian Semiconductor Equipment Associates, Inc. | Pinched plasma bridge flood gun for substrate charge neutralization |
| US9401266B2 (en) * | 2014-07-25 | 2016-07-26 | Bruker Daltonics, Inc. | Filament for mass spectrometric electron impact ion source |
| CN217933703U (zh) * | 2022-09-05 | 2022-11-29 | 台湾积体电路制造股份有限公司 | 离子源灯丝结构、离子源装置及离子注入设备 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR777482A (fr) * | 1933-09-14 | 1935-02-21 | Philips Nv | Cathode à oxyde plus particulièrement destinée aux tubes à décharges à atmosphère gazeuse |
| US2479193A (en) * | 1946-07-08 | 1949-08-16 | Gen Electric | Articulated cathode |
| FR1175593A (fr) * | 1957-05-21 | 1959-03-27 | Radio Electr Soc Fr | Perfectionnements aux filaments des tubes électroniques |
| US4176293A (en) * | 1978-02-17 | 1979-11-27 | Varian Associates, Inc. | Thermionic cathode heater having reduced magnetic field |
| GB2192751B (en) * | 1986-07-14 | 1991-02-13 | Denki Kagaku Kogyo Kk | Method of making a thermionic cathode structure. |
| JPH0697603B2 (ja) | 1987-04-02 | 1994-11-30 | 東芝ライテック株式会社 | 希ガス放電灯 |
| US4918354A (en) | 1987-12-18 | 1990-04-17 | Gte Products Corporation | Compact coiled coil incandescent filament with supports and pitch control |
| US4804837A (en) | 1988-01-11 | 1989-02-14 | Eaton Corporation | Ion implantation surface charge control method and apparatus |
| US4935662A (en) | 1988-08-31 | 1990-06-19 | Gte Products Corporation | Electric lamp having a coiled incandescent filament and filament movement restraint means |
| GB2246854B (en) * | 1990-08-09 | 1993-07-21 | Strand Lighting Ltd | Lamps |
| US5256947A (en) * | 1990-10-10 | 1993-10-26 | Nec Electronics, Inc. | Multiple filament enhanced ion source |
| US5262652A (en) * | 1991-05-14 | 1993-11-16 | Applied Materials, Inc. | Ion implantation apparatus having increased source lifetime |
| GB9304462D0 (en) * | 1993-03-04 | 1993-04-21 | Kore Tech Ltd | Mass spectrometer |
| US5497006A (en) | 1994-11-15 | 1996-03-05 | Eaton Corporation | Ion generating source for use in an ion implanter |
| US5680003A (en) | 1995-05-19 | 1997-10-21 | General Electric Company | Coiled-coil filament design for an incandescent lamp |
| US5808308A (en) * | 1996-05-03 | 1998-09-15 | Leybold Inficon Inc. | Dual ion source |
| US5856674A (en) * | 1997-09-16 | 1999-01-05 | Eaton Corporation | Filament for ion implanter plasma shower |
-
1998
- 1998-08-07 US US09/130,662 patent/US6204508B1/en not_active Expired - Fee Related
-
1999
- 1999-08-04 JP JP11220978A patent/JP2000077005A/ja not_active Ceased
- 1999-08-04 KR KR10-1999-0031960A patent/KR100479372B1/ko not_active Expired - Fee Related
- 1999-08-05 EP EP99306209A patent/EP0980088B1/en not_active Expired - Lifetime
- 1999-08-05 DE DE69911869T patent/DE69911869T2/de not_active Expired - Fee Related
- 1999-08-06 SG SG1999003846A patent/SG74159A1/en unknown
- 1999-08-07 TW TW088113509A patent/TW430853B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US6204508B1 (en) | 2001-03-20 |
| SG74159A1 (en) | 2000-07-18 |
| JP2000077005A (ja) | 2000-03-14 |
| EP0980088B1 (en) | 2003-10-08 |
| KR100479372B1 (ko) | 2005-03-28 |
| EP0980088A1 (en) | 2000-02-16 |
| KR20000017070A (ko) | 2000-03-25 |
| DE69911869D1 (de) | 2003-11-13 |
| TW430853B (en) | 2001-04-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |