DE69906923D1 - Lichtempfänger mit integrierter Schaltung - Google Patents

Lichtempfänger mit integrierter Schaltung

Info

Publication number
DE69906923D1
DE69906923D1 DE69906923T DE69906923T DE69906923D1 DE 69906923 D1 DE69906923 D1 DE 69906923D1 DE 69906923 T DE69906923 T DE 69906923T DE 69906923 T DE69906923 T DE 69906923T DE 69906923 D1 DE69906923 D1 DE 69906923D1
Authority
DE
Germany
Prior art keywords
integrated circuit
light receiver
receiver
light
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69906923T
Other languages
English (en)
Other versions
DE69906923T2 (de
Inventor
Isamu Ohkubo
Masaru Kubo
Naoki Fukunaga
Takahiro Takimoto
Mutsumi Oka
Toshimitsu Kasamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP37482498A external-priority patent/JP3592115B2/ja
Priority claimed from JP32475099A external-priority patent/JP2001144317A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69906923D1 publication Critical patent/DE69906923D1/de
Publication of DE69906923T2 publication Critical patent/DE69906923T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69906923T 1998-12-28 1999-12-27 Lichtempfänger mit integrierter Schaltung Expired - Fee Related DE69906923T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP37482498 1998-12-28
JP37482498A JP3592115B2 (ja) 1998-12-28 1998-12-28 回路内蔵型受光素子
JP32475099A JP2001144317A (ja) 1999-11-15 1999-11-15 回路内蔵型受光素子
JP32475099 1999-11-15

Publications (2)

Publication Number Publication Date
DE69906923D1 true DE69906923D1 (de) 2003-05-22
DE69906923T2 DE69906923T2 (de) 2004-02-26

Family

ID=26571594

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69906923T Expired - Fee Related DE69906923T2 (de) 1998-12-28 1999-12-27 Lichtempfänger mit integrierter Schaltung

Country Status (5)

Country Link
US (1) US6313484B1 (de)
EP (1) EP1017105B1 (de)
KR (2) KR20000048459A (de)
DE (1) DE69906923T2 (de)
TW (1) TW439286B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002203954A (ja) * 2000-10-31 2002-07-19 Sharp Corp 回路内蔵受光素子
JP4919370B2 (ja) * 2005-03-31 2012-04-18 ルネサスエレクトロニクス株式会社 半導体受光装置及び半導体受光装置の製造方法
JP2007180243A (ja) * 2005-12-27 2007-07-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US20080217716A1 (en) * 2007-03-09 2008-09-11 Mauritzson Richard A Imaging apparatus, method, and system having reduced dark current
US20080283605A1 (en) * 2007-05-16 2008-11-20 Sik Piu Kwan Device and system for a low noise photodiode in a barcode scanner
JP4979513B2 (ja) * 2007-08-22 2012-07-18 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US9762890B2 (en) * 2013-11-08 2017-09-12 Samsung Electronics Co., Ltd. Distance sensor and image processing system including the same
JP2020009790A (ja) * 2016-11-09 2020-01-16 シャープ株式会社 アバランシェフォトダイオード
DE102017121693B4 (de) * 2017-09-19 2022-12-08 Infineon Technologies Ag Dotierungsverfahren

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184170A (en) * 1977-02-11 1980-01-15 Xerox Corporation Light emitting diode
JPS61154063A (ja) 1984-12-26 1986-07-12 Toshiba Corp 光半導体装置およびその製造方法
JPS61154163A (ja) 1984-12-27 1986-07-12 Nec Corp 接合破壊型ｐｒｏｍ
JP2568074B2 (ja) 1986-11-11 1996-12-25 パイオニア株式会社 光センサ集積回路
JP2800827B2 (ja) * 1988-02-12 1998-09-21 浜松ホトニクス株式会社 光半導体装置およびその製造方法
US5156989A (en) * 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
US5410175A (en) * 1989-08-31 1995-04-25 Hamamatsu Photonics K.K. Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate
JPH04271172A (ja) 1991-02-27 1992-09-28 Sanyo Electric Co Ltd 光半導体装置
JP2557750B2 (ja) * 1991-02-27 1996-11-27 三洋電機株式会社 光半導体装置
JP2793085B2 (ja) * 1992-06-25 1998-09-03 三洋電機株式会社 光半導体装置とその製造方法
JP2957837B2 (ja) * 1993-04-02 1999-10-06 シャープ株式会社 受光素子および回路内蔵受光素子
JP2731115B2 (ja) * 1994-07-14 1998-03-25 シャープ株式会社 分割型受光素子
JP2828244B2 (ja) * 1995-09-26 1998-11-25 シャープ株式会社 受光素子
EP0778621B1 (de) * 1995-12-06 2008-08-13 Sony Corporation Aus einer Fotodiode und einem bipolaren Element bestehende Halbleitervorrichtung und Verfahren zur Herstellung
JPH09283788A (ja) * 1996-04-17 1997-10-31 Sanyo Electric Co Ltd 光半導体集積回路
TW423103B (en) * 1997-01-27 2001-02-21 Sharp Kk Divided photodiode

Also Published As

Publication number Publication date
KR20000048459A (ko) 2000-07-25
DE69906923T2 (de) 2004-02-26
KR100375160B1 (ko) 2003-03-08
EP1017105B1 (de) 2003-04-16
KR20020092293A (ko) 2002-12-11
EP1017105A1 (de) 2000-07-05
US6313484B1 (en) 2001-11-06
TW439286B (en) 2001-06-07

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee