DE69904074D1 - Verfahren und vorrichtung zum polieren von halbleiterscheiben - Google Patents

Verfahren und vorrichtung zum polieren von halbleiterscheiben

Info

Publication number
DE69904074D1
DE69904074D1 DE69904074T DE69904074T DE69904074D1 DE 69904074 D1 DE69904074 D1 DE 69904074D1 DE 69904074 T DE69904074 T DE 69904074T DE 69904074 T DE69904074 T DE 69904074T DE 69904074 D1 DE69904074 D1 DE 69904074D1
Authority
DE
Germany
Prior art keywords
polishing semiconductor
semiconductor discs
discs
polishing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69904074T
Other languages
English (en)
Other versions
DE69904074T2 (de
Inventor
J Yellitz
A Burke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE69904074D1 publication Critical patent/DE69904074D1/de
Application granted granted Critical
Publication of DE69904074T2 publication Critical patent/DE69904074T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/12Lapping plates for working plane surfaces
    • B24B37/16Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/08Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving liquid or pneumatic means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/14Zonally-graded wheels; Composite wheels comprising different abrasives
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S451/00Abrading
    • Y10S451/921Pad for lens shaping tool

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
DE69904074T 1998-09-08 1999-03-12 Verfahren und vorrichtung zum polieren von halbleiterscheiben Expired - Fee Related DE69904074T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/149,166 US6093085A (en) 1998-09-08 1998-09-08 Apparatuses and methods for polishing semiconductor wafers
PCT/US1999/005353 WO2000013852A1 (en) 1998-09-08 1999-03-12 Apparatuses and methods for polishing semiconductor wafers

Publications (2)

Publication Number Publication Date
DE69904074D1 true DE69904074D1 (de) 2003-01-02
DE69904074T2 DE69904074T2 (de) 2003-10-02

Family

ID=22529059

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69904074T Expired - Fee Related DE69904074T2 (de) 1998-09-08 1999-03-12 Verfahren und vorrichtung zum polieren von halbleiterscheiben

Country Status (6)

Country Link
US (1) US6093085A (de)
EP (1) EP1126950B1 (de)
JP (1) JP2002524863A (de)
KR (1) KR20010073048A (de)
DE (1) DE69904074T2 (de)
WO (1) WO2000013852A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6217426B1 (en) * 1999-04-06 2001-04-17 Applied Materials, Inc. CMP polishing pad
US20040072518A1 (en) * 1999-04-02 2004-04-15 Applied Materials, Inc. Platen with patterned surface for chemical mechanical polishing
US20040053566A1 (en) * 2001-01-12 2004-03-18 Applied Materials, Inc. CMP platen with patterned surface
US20020077037A1 (en) * 1999-05-03 2002-06-20 Tietz James V. Fixed abrasive articles
US6722963B1 (en) * 1999-08-03 2004-04-20 Micron Technology, Inc. Apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane
US6287172B1 (en) * 1999-12-17 2001-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improvement of tungsten chemical-mechanical polishing process
US6616513B1 (en) 2000-04-07 2003-09-09 Applied Materials, Inc. Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile
KR100394572B1 (ko) * 2000-12-28 2003-08-14 삼성전자주식회사 복합특성을 가지는 씨엠피 패드구조와 그 제조방법
US6544107B2 (en) * 2001-02-16 2003-04-08 Agere Systems Inc. Composite polishing pads for chemical-mechanical polishing
US6857941B2 (en) * 2001-06-01 2005-02-22 Applied Materials, Inc. Multi-phase polishing pad
US7121919B2 (en) * 2001-08-30 2006-10-17 Micron Technology, Inc. Chemical mechanical polishing system and process
US6663472B2 (en) 2002-02-01 2003-12-16 Chartered Semiconductor Manufacturing Ltd. Multiple step CMP polishing
US6761625B1 (en) 2003-05-20 2004-07-13 Intel Corporation Reclaiming virgin test wafers
JP4292025B2 (ja) * 2003-05-23 2009-07-08 Jsr株式会社 研磨パッド
KR100546355B1 (ko) * 2003-07-28 2006-01-26 삼성전자주식회사 국부 단차 형성용 삽입 패드를 구비하는 cmp 장치
US7160178B2 (en) * 2003-08-07 2007-01-09 3M Innovative Properties Company In situ activation of a three-dimensional fixed abrasive article
US8066552B2 (en) * 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
KR100578133B1 (ko) * 2003-11-04 2006-05-10 삼성전자주식회사 화학적 기계적 연마 장치 및 이에 사용되는 연마 패드
JP4641781B2 (ja) * 2003-11-04 2011-03-02 三星電子株式会社 不均一強度を有する研磨面を使用した化学的機械的研磨装置および方法
US20050148289A1 (en) * 2004-01-06 2005-07-07 Cabot Microelectronics Corp. Micromachining by chemical mechanical polishing
US6951509B1 (en) * 2004-03-09 2005-10-04 3M Innovative Properties Company Undulated pad conditioner and method of using same
JP5389543B2 (ja) * 2009-06-19 2014-01-15 株式会社ディスコ 研磨パッド
DE102013201663B4 (de) * 2012-12-04 2020-04-23 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
CN103707178A (zh) * 2013-02-26 2014-04-09 任靖日 加工表面高平坦化方法及其装置
CN109075054B (zh) * 2016-03-25 2023-06-09 应用材料公司 具有局部区域速率控制及振荡模式的研磨系统
CN110087809B (zh) * 2016-12-21 2020-12-01 3M创新有限公司 具有垫片的垫调节器和晶片平面化系统
US10879077B2 (en) * 2017-10-30 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Planarization apparatus and planarization method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03259520A (ja) * 1990-03-08 1991-11-19 Nec Corp 回転研磨装置
US5435772A (en) * 1993-04-30 1995-07-25 Motorola, Inc. Method of polishing a semiconductor substrate
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5897424A (en) * 1995-07-10 1999-04-27 The United States Of America As Represented By The Secretary Of Commerce Renewable polishing lap
US5899799A (en) * 1996-01-19 1999-05-04 Micron Display Technology, Inc. Method and system to increase delivery of slurry to the surface of large substrates during polishing operations
US5800248A (en) * 1996-04-26 1998-09-01 Ontrak Systems Inc. Control of chemical-mechanical polishing rate across a substrate surface
US5733176A (en) * 1996-05-24 1998-03-31 Micron Technology, Inc. Polishing pad and method of use
JP2865061B2 (ja) * 1996-06-27 1999-03-08 日本電気株式会社 研磨パッドおよび研磨装置ならびに半導体装置の製造方法
US5645469A (en) * 1996-09-06 1997-07-08 Advanced Micro Devices, Inc. Polishing pad with radially extending tapered channels
US5899745A (en) * 1997-07-03 1999-05-04 Motorola, Inc. Method of chemical mechanical polishing (CMP) using an underpad with different compression regions and polishing pad therefor
JP2001513452A (ja) * 1997-08-06 2001-09-04 ローデル ホールディングス インコーポレイテッド 連続的に変化し得る平坦化及び研磨パッドシステム
US5931719A (en) * 1997-08-25 1999-08-03 Lsi Logic Corporation Method and apparatus for using pressure differentials through a polishing pad to improve performance in chemical mechanical polishing

Also Published As

Publication number Publication date
US6093085A (en) 2000-07-25
JP2002524863A (ja) 2002-08-06
EP1126950B1 (de) 2002-11-20
WO2000013852A1 (en) 2000-03-16
KR20010073048A (ko) 2001-07-31
DE69904074T2 (de) 2003-10-02
WO2000013852A8 (en) 2001-08-16
EP1126950A1 (de) 2001-08-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee