DE69904000D1 - Dünnfilm-Herstellungsvorrichtung zur Herstellung eines dünnen kristallinen Silicium-Films - Google Patents
Dünnfilm-Herstellungsvorrichtung zur Herstellung eines dünnen kristallinen Silicium-FilmsInfo
- Publication number
- DE69904000D1 DE69904000D1 DE69904000T DE69904000T DE69904000D1 DE 69904000 D1 DE69904000 D1 DE 69904000D1 DE 69904000 T DE69904000 T DE 69904000T DE 69904000 T DE69904000 T DE 69904000T DE 69904000 D1 DE69904000 D1 DE 69904000D1
- Authority
- DE
- Germany
- Prior art keywords
- thin
- producing
- manufacturing apparatus
- crystalline silicon
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10142274A JP2990668B2 (ja) | 1998-05-08 | 1998-05-08 | 薄膜形成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69904000D1 true DE69904000D1 (de) | 2003-01-02 |
DE69904000T2 DE69904000T2 (de) | 2003-03-27 |
Family
ID=15311552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69904000T Expired - Fee Related DE69904000T2 (de) | 1998-05-08 | 1999-05-07 | Dünnfilm-Herstellungsvorrichtung zur Herstellung eines dünnen kristallinen Silicium-Films |
Country Status (4)
Country | Link |
---|---|
US (1) | US6192828B1 (de) |
EP (1) | EP0976846B1 (de) |
JP (1) | JP2990668B2 (de) |
DE (1) | DE69904000T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000003566A1 (fr) * | 1998-07-13 | 2000-01-20 | Toshiyuki Takamatsu | Appareil a decharge pour micro-ondes |
KR100762754B1 (ko) * | 1999-11-30 | 2007-10-09 | 동경 엘렉트론 주식회사 | 플라즈마 처리 장치 |
DE10060002B4 (de) * | 1999-12-07 | 2016-01-28 | Komatsu Ltd. | Vorrichtung zur Oberflächenbehandlung |
KR20020037995A (ko) * | 2000-11-16 | 2002-05-23 | 구자홍 | 플라즈마 중합 처리장치의 전극 구조 |
JP3555084B2 (ja) * | 2001-06-11 | 2004-08-18 | Necエレクトロニクス株式会社 | 半導体基板に対するプラズマ処理方法及び半導体基板のためのプラズマ処理装置 |
AU2002363972A1 (en) * | 2001-11-21 | 2003-06-10 | The Regents Of The University Of California | Low temperature compatible wide-pressure-range plasma flow device |
KR100453578B1 (ko) * | 2002-01-04 | 2004-10-20 | 주성엔지니어링(주) | 실리콘 에피택셜층 성장공정 전의 기판 사전 세정방법 |
JP2004200113A (ja) * | 2002-12-20 | 2004-07-15 | Hamamatsu Kagaku Gijutsu Kenkyu Shinkokai | マイクロ波プラズマ発生装置 |
CN101451237B (zh) | 2007-11-30 | 2012-02-08 | 中微半导体设备(上海)有限公司 | 具有多个等离子体反应区域的包括多个处理平台的等离子体反应室 |
JP6002522B2 (ja) * | 2012-09-27 | 2016-10-05 | 株式会社Screenホールディングス | 薄膜形成装置、薄膜形成方法 |
JP6431303B2 (ja) * | 2014-07-03 | 2018-11-28 | 株式会社Screenホールディングス | エッチング装置およびエッチング方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4828369A (en) * | 1986-05-28 | 1989-05-09 | Minolta Camera Kabushiki Kaisha | Electrochromic device |
JPH0525648A (ja) * | 1991-07-15 | 1993-02-02 | Matsushita Electric Ind Co Ltd | プラズマcvd成膜方法 |
JPH0645254A (ja) | 1992-03-13 | 1994-02-18 | Limes:Kk | アモルファスシリコン膜の製造方法及び製造装置 |
JP3024543B2 (ja) | 1996-03-18 | 2000-03-21 | 日新電機株式会社 | 結晶性シリコン膜及びその製造方法 |
US5968275A (en) * | 1997-06-25 | 1999-10-19 | Lam Research Corporation | Methods and apparatus for passivating a substrate in a plasma reactor |
JP3301357B2 (ja) * | 1997-08-26 | 2002-07-15 | 株式会社村田製作所 | 平行平板型プラズマcvd装置 |
-
1998
- 1998-05-08 JP JP10142274A patent/JP2990668B2/ja not_active Expired - Fee Related
-
1999
- 1999-05-07 EP EP99109083A patent/EP0976846B1/de not_active Expired - Fee Related
- 1999-05-07 US US09/306,990 patent/US6192828B1/en not_active Expired - Fee Related
- 1999-05-07 DE DE69904000T patent/DE69904000T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0976846B1 (de) | 2002-11-20 |
JP2990668B2 (ja) | 1999-12-13 |
EP0976846A1 (de) | 2000-02-02 |
US6192828B1 (en) | 2001-02-27 |
DE69904000T2 (de) | 2003-03-27 |
JPH11323562A (ja) | 1999-11-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |