DE69904000D1 - Dünnfilm-Herstellungsvorrichtung zur Herstellung eines dünnen kristallinen Silicium-Films - Google Patents

Dünnfilm-Herstellungsvorrichtung zur Herstellung eines dünnen kristallinen Silicium-Films

Info

Publication number
DE69904000D1
DE69904000D1 DE69904000T DE69904000T DE69904000D1 DE 69904000 D1 DE69904000 D1 DE 69904000D1 DE 69904000 T DE69904000 T DE 69904000T DE 69904000 T DE69904000 T DE 69904000T DE 69904000 D1 DE69904000 D1 DE 69904000D1
Authority
DE
Germany
Prior art keywords
thin
producing
manufacturing apparatus
crystalline silicon
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69904000T
Other languages
English (en)
Other versions
DE69904000T2 (de
Inventor
Eiji Takahashi
Hiroya Kirimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Publication of DE69904000D1 publication Critical patent/DE69904000D1/de
Application granted granted Critical
Publication of DE69904000T2 publication Critical patent/DE69904000T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE69904000T 1998-05-08 1999-05-07 Dünnfilm-Herstellungsvorrichtung zur Herstellung eines dünnen kristallinen Silicium-Films Expired - Fee Related DE69904000T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10142274A JP2990668B2 (ja) 1998-05-08 1998-05-08 薄膜形成装置

Publications (2)

Publication Number Publication Date
DE69904000D1 true DE69904000D1 (de) 2003-01-02
DE69904000T2 DE69904000T2 (de) 2003-03-27

Family

ID=15311552

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69904000T Expired - Fee Related DE69904000T2 (de) 1998-05-08 1999-05-07 Dünnfilm-Herstellungsvorrichtung zur Herstellung eines dünnen kristallinen Silicium-Films

Country Status (4)

Country Link
US (1) US6192828B1 (de)
EP (1) EP0976846B1 (de)
JP (1) JP2990668B2 (de)
DE (1) DE69904000T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562079B1 (en) * 1998-07-13 2003-05-13 Toshiyuki Takamatsu Microwave discharge apparatus
US6622650B2 (en) * 1999-11-30 2003-09-23 Tokyo Electron Limited Plasma processing apparatus
DE10060002B4 (de) * 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
KR20020037995A (ko) * 2000-11-16 2002-05-23 구자홍 플라즈마 중합 처리장치의 전극 구조
JP3555084B2 (ja) * 2001-06-11 2004-08-18 Ｎｅｃエレクトロニクス株式会社 半導体基板に対するプラズマ処理方法及び半導体基板のためのプラズマ処理装置
AU2002363972A1 (en) * 2001-11-21 2003-06-10 The Regents Of The University Of California Low temperature compatible wide-pressure-range plasma flow device
KR100453578B1 (ko) * 2002-01-04 2004-10-20 주성엔지니어링(주) 실리콘 에피택셜층 성장공정 전의 기판 사전 세정방법
JP2004200113A (ja) * 2002-12-20 2004-07-15 Hamamatsu Kagaku Gijutsu Kenkyu Shinkokai マイクロ波プラズマ発生装置
CN101451237B (zh) 2007-11-30 2012-02-08 中微半导体设备(上海)有限公司 具有多个等离子体反应区域的包括多个处理平台的等离子体反应室
JP6002522B2 (ja) * 2012-09-27 2016-10-05 株式会社Ｓｃｒｅｅｎホールディングス 薄膜形成装置、薄膜形成方法
JP6431303B2 (ja) * 2014-07-03 2018-11-28 株式会社Ｓｃｒｅｅｎホールディングス エッチング装置およびエッチング方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3717985A1 (de) * 1986-05-28 1987-12-03 Minolta Camera Kk Elektrochrome vorrichtung
JPH0525648A (ja) * 1991-07-15 1993-02-02 Matsushita Electric Ind Co Ltd プラズマｃｖｄ成膜方法
JPH0645254A (ja) 1992-03-13 1994-02-18 Limes:Kk アモルファスシリコン膜の製造方法及び製造装置
JP3024543B2 (ja) 1996-03-18 2000-03-21 日新電機株式会社 結晶性シリコン膜及びその製造方法
US5968275A (en) * 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
JP3301357B2 (ja) * 1997-08-26 2002-07-15 株式会社村田製作所 平行平板型プラズマｃｖｄ装置

Also Published As

Publication number Publication date
EP0976846A1 (de) 2000-02-02
JPH11323562A (ja) 1999-11-26
DE69904000T2 (de) 2003-03-27
US6192828B1 (en) 2001-02-27
EP0976846B1 (de) 2002-11-20
JP2990668B2 (ja) 1999-12-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee