DE69840480D1 - Herstellung von mikro- oder nanostrukturen auf einem träger - Google Patents
Herstellung von mikro- oder nanostrukturen auf einem trägerInfo
- Publication number
- DE69840480D1 DE69840480D1 DE69840480T DE69840480T DE69840480D1 DE 69840480 D1 DE69840480 D1 DE 69840480D1 DE 69840480 T DE69840480 T DE 69840480T DE 69840480 T DE69840480 T DE 69840480T DE 69840480 D1 DE69840480 D1 DE 69840480D1
- Authority
- DE
- Germany
- Prior art keywords
- nanostructures
- micro
- carrier
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002086 nanomaterial Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9709264A FR2766620B1 (fr) | 1997-07-22 | 1997-07-22 | Realisation de microstructures ou de nanostructures sur un support |
PCT/FR1998/001585 WO1999005711A1 (fr) | 1997-07-22 | 1998-07-20 | Realisation de microstructures ou de nanostructures sur un support |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69840480D1 true DE69840480D1 (de) | 2009-03-05 |
Family
ID=9509456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69840480T Expired - Lifetime DE69840480D1 (de) | 1997-07-22 | 1998-07-20 | Herstellung von mikro- oder nanostrukturen auf einem träger |
Country Status (6)
Country | Link |
---|---|
US (1) | US6261928B1 (de) |
EP (1) | EP1008169B1 (de) |
JP (1) | JP4920131B2 (de) |
DE (1) | DE69840480D1 (de) |
FR (1) | FR2766620B1 (de) |
WO (1) | WO1999005711A1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19853023A1 (de) | 1998-11-18 | 2000-05-31 | Forschungszentrum Juelich Gmbh | Verfahren zur Herstellung von Nanostrukturen in dünnen Filmen |
US6329070B1 (en) * | 1999-12-09 | 2001-12-11 | Cornell Research Foundation, Inc. | Fabrication of periodic surface structures with nanometer-scale spacings |
FR2815026B1 (fr) * | 2000-10-06 | 2004-04-09 | Commissariat Energie Atomique | Procede d'auto-organisation de microstructures ou de nanostructures et dispositif a microstructures ou a nanostructures |
FR2815121B1 (fr) * | 2000-10-06 | 2002-12-13 | Commissariat Energie Atomique | Procede de revelation de defauts cristallins et/ou de champs de contraintes a l'interface d'adhesion moleculaire de deux materiaux solides |
FR2819099B1 (fr) * | 2000-12-28 | 2003-09-26 | Commissariat Energie Atomique | Procede de realisation d'une structure empilee |
US6913697B2 (en) | 2001-02-14 | 2005-07-05 | Science & Technology Corporation @ Unm | Nanostructured separation and analysis devices for biological membranes |
US6699770B2 (en) * | 2001-03-01 | 2004-03-02 | John Tarje Torvik | Method of making a hybride substrate having a thin silicon carbide membrane layer |
JP2002265831A (ja) * | 2001-03-13 | 2002-09-18 | Ricoh Co Ltd | インク組成物及びそれを使用する記録方法 |
US6956268B2 (en) | 2001-05-18 | 2005-10-18 | Reveo, Inc. | MEMS and method of manufacturing MEMS |
US7045878B2 (en) | 2001-05-18 | 2006-05-16 | Reveo, Inc. | Selectively bonded thin film layer and substrate layer for processing of useful devices |
KR100425092B1 (ko) * | 2001-05-29 | 2004-03-30 | 엘지전자 주식회사 | 실리콘 컴플라이언트 기판 제조방법 |
CN1164488C (zh) * | 2001-07-25 | 2004-09-01 | 中山大学 | 一种纳米碳化硅材料的制备方法 |
US7163826B2 (en) | 2001-09-12 | 2007-01-16 | Reveo, Inc | Method of fabricating multi layer devices on buried oxide layer substrates |
US6875671B2 (en) | 2001-09-12 | 2005-04-05 | Reveo, Inc. | Method of fabricating vertical integrated circuits |
WO2003044383A1 (de) * | 2001-11-23 | 2003-05-30 | Alcove Surfaces Gmbh | Lager und verbundaufbau |
JP2005279843A (ja) * | 2004-03-29 | 2005-10-13 | Univ Of Tokyo | 細線を含む結晶材料とその製造方法、およびこれを用いたナノ細線デバイス |
FR2876498B1 (fr) * | 2004-10-12 | 2008-03-14 | Commissariat Energie Atomique | Procede de realisation d'heterostructures resonnantes a transport planaire |
FR2877662B1 (fr) | 2004-11-09 | 2007-03-02 | Commissariat Energie Atomique | Reseau de particules et procede de realisation d'un tel reseau. |
FR2895419B1 (fr) | 2005-12-27 | 2008-02-22 | Commissariat Energie Atomique | Procede de realisation simplifiee d'une structure epitaxiee |
FR2895391B1 (fr) | 2005-12-27 | 2008-01-25 | Commissariat Energie Atomique | Procede d'elaboration de nanostructures ordonnees |
FR2895571B1 (fr) * | 2005-12-28 | 2008-04-18 | Commissariat Energie Atomique | Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire |
FR2896493B1 (fr) * | 2006-01-23 | 2008-02-22 | Commissariat Energie Atomique | Procede d'elaboration d'un support pour la croissance de nanostructures allongees localisees |
FR2903810B1 (fr) * | 2006-07-13 | 2008-10-10 | Commissariat Energie Atomique | Procede de nanostructuration de la surface d'un substrat |
JP2008060355A (ja) * | 2006-08-31 | 2008-03-13 | Sumco Corp | 貼り合わせウェーハの製造方法および貼り合わせウェーハ |
FR2925748B1 (fr) | 2007-12-21 | 2010-01-29 | Commissariat Energie Atomique | Support de stockage de donnees et procede associe |
FR2937797B1 (fr) * | 2008-10-28 | 2010-12-24 | S O I Tec Silicon On Insulator Tech | Procede de fabrication et de traitement d'une structure de type semi-conducteur sur isolant, permettant de deplacer des dislocations, et structure correspondante |
FR2978600B1 (fr) | 2011-07-25 | 2014-02-07 | Soitec Silicon On Insulator | Procede et dispositif de fabrication de couche de materiau semi-conducteur |
JP6355540B2 (ja) * | 2014-12-04 | 2018-07-11 | 株式会社ディスコ | ウエーハの生成方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
DE4133820A1 (de) * | 1991-10-12 | 1993-04-15 | Bosch Gmbh Robert | Verfahren zur herstellung von halbleiterelementen |
JP3237888B2 (ja) * | 1992-01-31 | 2001-12-10 | キヤノン株式会社 | 半導体基体及びその作製方法 |
JP3192000B2 (ja) * | 1992-08-25 | 2001-07-23 | キヤノン株式会社 | 半導体基板及びその作製方法 |
JP2908150B2 (ja) * | 1992-11-27 | 1999-06-21 | 日本電気株式会社 | Soi基板構造及びその製造方法 |
FR2714524B1 (fr) | 1993-12-23 | 1996-01-26 | Commissariat Energie Atomique | Procede de realisation d'une structure en relief sur un support en materiau semiconducteur |
FR2715502B1 (fr) | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Structure présentant des cavités et procédé de réalisation d'une telle structure. |
FR2715501B1 (fr) | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Procédé de dépôt de lames semiconductrices sur un support. |
JPH07263721A (ja) * | 1994-03-25 | 1995-10-13 | Nippondenso Co Ltd | 半導体装置及びその製造方法 |
FR2725074B1 (fr) * | 1994-09-22 | 1996-12-20 | Commissariat Energie Atomique | Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat |
US5932048A (en) * | 1995-04-06 | 1999-08-03 | Komatsu Electronic Metals Co., Ltd. | Method of fabricating direct-bonded semiconductor wafers |
JP3441277B2 (ja) * | 1995-12-26 | 2003-08-25 | 株式会社東芝 | 半導体装置およびその製造方法 |
FR2756973B1 (fr) | 1996-12-09 | 1999-01-08 | Commissariat Energie Atomique | Procede d'introduction d'une phase gazeuse dans une cavite fermee |
US6146979A (en) * | 1997-05-12 | 2000-11-14 | Silicon Genesis Corporation | Pressurized microbubble thin film separation process using a reusable substrate |
US5877070A (en) * | 1997-05-31 | 1999-03-02 | Max-Planck Society | Method for the transfer of thin layers of monocrystalline material to a desirable substrate |
US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
US5981400A (en) * | 1997-09-18 | 1999-11-09 | Cornell Research Foundation, Inc. | Compliant universal substrate for epitaxial growth |
US5897362A (en) * | 1998-04-17 | 1999-04-27 | Lucent Technologies Inc. | Bonding silicon wafers |
-
1997
- 1997-07-22 FR FR9709264A patent/FR2766620B1/fr not_active Expired - Fee Related
-
1998
- 1998-07-20 JP JP2000504598A patent/JP4920131B2/ja not_active Expired - Lifetime
- 1998-07-20 US US09/463,226 patent/US6261928B1/en not_active Expired - Lifetime
- 1998-07-20 DE DE69840480T patent/DE69840480D1/de not_active Expired - Lifetime
- 1998-07-20 EP EP98939717A patent/EP1008169B1/de not_active Expired - Lifetime
- 1998-07-20 WO PCT/FR1998/001585 patent/WO1999005711A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2001511599A (ja) | 2001-08-14 |
EP1008169A1 (de) | 2000-06-14 |
WO1999005711A1 (fr) | 1999-02-04 |
FR2766620A1 (fr) | 1999-01-29 |
US6261928B1 (en) | 2001-07-17 |
JP4920131B2 (ja) | 2012-04-18 |
FR2766620B1 (fr) | 2000-12-01 |
EP1008169B1 (de) | 2009-01-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |