DE69837730D1 - Verfahren zur Entfernung von einem Oxyd-Film und Einrichtung dafür - Google Patents

Verfahren zur Entfernung von einem Oxyd-Film und Einrichtung dafür

Info

Publication number
DE69837730D1
DE69837730D1 DE69837730T DE69837730T DE69837730D1 DE 69837730 D1 DE69837730 D1 DE 69837730D1 DE 69837730 T DE69837730 T DE 69837730T DE 69837730 T DE69837730 T DE 69837730T DE 69837730 D1 DE69837730 D1 DE 69837730D1
Authority
DE
Germany
Prior art keywords
oxide film
means therefor
therefor
oxide
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69837730T
Other languages
English (en)
Other versions
DE69837730T2 (de
Inventor
Yasuo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of DE69837730D1 publication Critical patent/DE69837730D1/de
Application granted granted Critical
Publication of DE69837730T2 publication Critical patent/DE69837730T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
DE69837730T 1997-06-04 1998-05-29 Verfahren zur Entfernung von einem Oxyd-Film und Einrichtung dafür Expired - Lifetime DE69837730T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16188197A JP3627451B2 (ja) 1997-06-04 1997-06-04 表面処理方法及びその装置
JP16188197 1997-06-04

Publications (2)

Publication Number Publication Date
DE69837730D1 true DE69837730D1 (de) 2007-06-14
DE69837730T2 DE69837730T2 (de) 2008-01-10

Family

ID=15743770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69837730T Expired - Lifetime DE69837730T2 (de) 1997-06-04 1998-05-29 Verfahren zur Entfernung von einem Oxyd-Film und Einrichtung dafür

Country Status (5)

Country Link
EP (4) EP2043138A3 (de)
JP (1) JP3627451B2 (de)
KR (1) KR100566472B1 (de)
DE (1) DE69837730T2 (de)
TW (1) TW408371B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
TW448499B (en) * 1998-11-11 2001-08-01 Tokyo Electron Ltd Surface treatment method and surface treatment apparatus
JP4057198B2 (ja) 1999-08-13 2008-03-05 東京エレクトロン株式会社 処理装置及び処理方法
JP2001110785A (ja) * 1999-10-12 2001-04-20 Tokyo Electron Ltd 処理方法
KR100573929B1 (ko) * 2001-12-14 2006-04-26 (주)에이피엘 플라즈마를 이용한 표면 세정 장치 및 방법
US7111629B2 (en) 2001-01-08 2006-09-26 Apl Co., Ltd. Method for cleaning substrate surface
KR101025323B1 (ko) 2004-01-13 2011-03-29 가부시키가이샤 아루박 에칭 장치 및 에칭 방법
KR100617068B1 (ko) * 2005-07-12 2006-08-30 동부일렉트로닉스 주식회사 반도체 소자의 제조방법
US7494545B2 (en) * 2006-02-03 2009-02-24 Applied Materials, Inc. Epitaxial deposition process and apparatus
JP5425404B2 (ja) * 2008-01-18 2014-02-26 東京エレクトロン株式会社 アモルファスカーボン膜の処理方法およびそれを用いた半導体装置の製造方法
KR101620053B1 (ko) 2009-12-22 2016-05-26 주식회사 원익아이피에스 기판처리장치
US8501629B2 (en) * 2009-12-23 2013-08-06 Applied Materials, Inc. Smooth SiConi etch for silicon-containing films
KR101495288B1 (ko) * 2012-06-04 2015-02-24 피에스케이 주식회사 기판 처리 장치 및 방법
JP5916909B1 (ja) * 2015-02-06 2016-05-11 株式会社日立国際電気 基板処理装置、ガス整流部、半導体装置の製造方法およびプログラム
KR102381238B1 (ko) * 2018-11-26 2022-04-01 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 방법
TW202208075A (zh) 2020-04-28 2022-03-01 日商東京威力科創股份有限公司 半導體裝置之製造方法、半導體製造裝置及系統
US20240191354A1 (en) * 2022-12-09 2024-06-13 Applied Materials, Inc. Method of Selective Metal Deposition Using Separated Reactant Activation and Plasma Discharging Zone

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961930A (ja) * 1982-10-01 1984-04-09 Hitachi Ltd ウエハ処理装置
US4689112A (en) * 1985-05-17 1987-08-25 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
US5030319A (en) * 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
JP2981243B2 (ja) 1988-12-27 1999-11-22 株式会社東芝 表面処理方法
JPH03261138A (ja) * 1990-03-09 1991-11-21 Mitsubishi Electric Corp 半導体装置のクリーニング方法およびクリーニング装置
US5273609A (en) * 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
JPH05109683A (ja) * 1991-03-27 1993-04-30 Mitsubishi Materials Corp 半導体シリコンウエーハ洗浄液の金属不純物除去方法
JP3084497B2 (ja) * 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP2804700B2 (ja) * 1993-03-31 1998-09-30 富士通株式会社 半導体装置の製造装置及び半導体装置の製造方法
JP3328416B2 (ja) * 1994-03-18 2002-09-24 富士通株式会社 半導体装置の製造方法と製造装置

Also Published As

Publication number Publication date
KR100566472B1 (ko) 2006-08-30
JP3627451B2 (ja) 2005-03-09
EP1909314A1 (de) 2008-04-09
EP1542262A1 (de) 2005-06-15
EP2043138A2 (de) 2009-04-01
EP1542262B1 (de) 2007-05-02
TW408371B (en) 2000-10-11
EP2043138A3 (de) 2009-04-22
JPH10335316A (ja) 1998-12-18
EP0887845A3 (de) 1999-03-03
KR19990006635A (ko) 1999-01-25
DE69837730T2 (de) 2008-01-10
EP0887845A2 (de) 1998-12-30

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