DE69827608D1 - Ausrichtungsvorrichtung und lithographischer apparat mit einer solchen vorrichtung - Google Patents

Ausrichtungsvorrichtung und lithographischer apparat mit einer solchen vorrichtung

Info

Publication number
DE69827608D1
DE69827608D1 DE69827608T DE69827608T DE69827608D1 DE 69827608 D1 DE69827608 D1 DE 69827608D1 DE 69827608 T DE69827608 T DE 69827608T DE 69827608 T DE69827608 T DE 69827608T DE 69827608 D1 DE69827608 D1 DE 69827608D1
Authority
DE
Germany
Prior art keywords
lithographic apparatus
alignment
alignment device
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69827608T
Other languages
English (en)
Other versions
DE69827608T2 (de
Inventor
Peter Dirksen
Maarten Nuijs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE69827608D1 publication Critical patent/DE69827608D1/de
Application granted granted Critical
Publication of DE69827608T2 publication Critical patent/DE69827608T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7069—Alignment mark illumination, e.g. darkfield, dual focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69827608T 1997-12-29 1998-12-07 Ausrichtungsvorrichtung und lithographischer apparat mit einer solchen vorrichtung Expired - Fee Related DE69827608T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP97204127 1997-12-29
EP97204127 1997-12-29
PCT/IB1998/001976 WO1999034258A1 (en) 1997-12-29 1998-12-07 Alignment device and lithographic apparatus comprising such a device

Publications (2)

Publication Number Publication Date
DE69827608D1 true DE69827608D1 (de) 2004-12-23
DE69827608T2 DE69827608T2 (de) 2005-11-24

Family

ID=8229139

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69827608T Expired - Fee Related DE69827608T2 (de) 1997-12-29 1998-12-07 Ausrichtungsvorrichtung und lithographischer apparat mit einer solchen vorrichtung

Country Status (5)

Country Link
US (1) US6160622A (de)
EP (1) EP0963573B1 (de)
JP (1) JP3996212B2 (de)
DE (1) DE69827608T2 (de)
WO (1) WO1999034258A1 (de)

Families Citing this family (32)

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US6417922B1 (en) * 1997-12-29 2002-07-09 Asml Netherlands B.V. Alignment device and lithographic apparatus comprising such a device
US6469793B1 (en) * 1999-08-10 2002-10-22 Svg Lithography Systems, Inc. Multi-channel grating interference alignment sensor
TWI231405B (en) * 1999-12-22 2005-04-21 Asml Netherlands Bv Lithographic projection apparatus, position detection device, and method of manufacturing a device using a lithographic projection apparatus
TWI282909B (en) * 1999-12-23 2007-06-21 Asml Netherlands Bv Lithographic apparatus and a method for manufacturing a device
US6462818B1 (en) 2000-06-22 2002-10-08 Kla-Tencor Corporation Overlay alignment mark design
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US6486954B1 (en) 2000-09-01 2002-11-26 Kla-Tencor Technologies Corporation Overlay alignment measurement mark
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
CN100337089C (zh) * 2002-09-20 2007-09-12 Asml荷兰有限公司 器件检验
US7440105B2 (en) 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
US7075639B2 (en) * 2003-04-25 2006-07-11 Kla-Tencor Technologies Corporation Method and mark for metrology of phase errors on phase shift masks
US7608468B1 (en) * 2003-07-02 2009-10-27 Kla-Tencor Technologies, Corp. Apparatus and methods for determining overlay and uses of same
US7346878B1 (en) 2003-07-02 2008-03-18 Kla-Tencor Technologies Corporation Apparatus and methods for providing in-chip microtargets for metrology or inspection
US7629697B2 (en) * 2004-11-12 2009-12-08 Asml Netherlands B.V. Marker structure and method for controlling alignment of layers of a multi-layered substrate
US7271907B2 (en) * 2004-12-23 2007-09-18 Asml Netherlands B.V. Lithographic apparatus with two-dimensional alignment measurement arrangement and two-dimensional alignment measurement method
US7557921B1 (en) 2005-01-14 2009-07-07 Kla-Tencor Technologies Corporation Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools
US7687925B2 (en) * 2005-09-07 2010-03-30 Infineon Technologies Ag Alignment marks for polarized light lithography and method for use thereof
NL1036179A1 (nl) * 2007-11-20 2009-05-25 Asml Netherlands Bv Lithographic apparatus and method.
DE102008029970A1 (de) 2008-06-26 2009-12-31 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie sowie Verfahren zum Überwachen einer lateralen Abbildungsstabilität
NL2005414A (en) 2009-10-28 2011-05-02 Asml Netherlands Bv Lithographic apparatus and patterning device.
US9122172B2 (en) 2010-06-04 2015-09-01 Advantech Global, Ltd Reflection shadow mask alignment using coded apertures
US9580792B2 (en) 2010-06-04 2017-02-28 Advantech Global, Ltd Shadow mask alignment using variable pitch coded apertures
US9157148B2 (en) 2010-06-04 2015-10-13 Advantech Global, Ltd Shadow mask alignment using coded apertures
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
KR101215094B1 (ko) * 2010-10-25 2012-12-24 삼성전자주식회사 피측정체 정렬장치
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
CN109901359A (zh) * 2017-12-11 2019-06-18 长鑫存储技术有限公司 用于掩膜的对准图形、掩膜及晶圆
EP3629086A1 (de) * 2018-09-25 2020-04-01 ASML Netherlands B.V. Verfahren und vorrichtung zum bestimmen eines strahlungsintensitätsprofils

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Publication number Priority date Publication date Assignee Title
NL7606548A (nl) * 1976-06-17 1977-12-20 Philips Nv Werkwijze en inrichting voor het uitrichten van een i.c.-patroon ten opzichte van een halfgelei- dend substraat.
NL186353C (nl) * 1979-06-12 1990-11-01 Philips Nv Inrichting voor het afbeelden van een maskerpatroon op een substraat voorzien van een opto-elektronisch detektiestelsel voor het bepalen van een afwijking tussen het beeldvlak van een projektielenzenstelsel en het substraatvlak.
NL8401710A (nl) * 1984-05-29 1985-12-16 Philips Nv Inrichting voor het afbeelden van een maskerpatroon op een substraat.
NL8600639A (nl) * 1986-03-12 1987-10-01 Asm Lithography Bv Werkwijze voor het ten opzichte van elkaar uitrichten van een masker en een substraat en inrichting voor het uitvoeren van de werkwijze.
NL8601547A (nl) * 1986-06-16 1988-01-18 Philips Nv Optisch litografische inrichting met verplaatsbaar lenzenstelsel en werkwijze voor het regelen van de afbeeldingseigenschappen van een lenzenstelsel in een dergelijke inrichting.
JPS6329540A (ja) * 1986-07-23 1988-02-08 Hitachi Ltd 位置合わせ方法および装置
JPS6340316A (ja) * 1986-08-05 1988-02-20 Mitsubishi Electric Corp 半導体製造装置
NL8900991A (nl) * 1989-04-20 1990-11-16 Asm Lithography Bv Apparaat voor het afbeelden van een maskerpatroon op een substraat.
DE69120989D1 (de) * 1990-03-12 1996-08-29 Fujitsu Ltd Ausrichtungsmarke, insbesondere für Halbleiter
NL9001611A (nl) * 1990-07-16 1992-02-17 Asm Lithography Bv Apparaat voor het afbeelden van een maskerpatroon op een substraat.
NL9100215A (nl) * 1991-02-07 1992-09-01 Asm Lithography Bv Inrichting voor het repeterend afbeelden van een maskerpatroon op een substraat.
NL9100410A (nl) * 1991-03-07 1992-10-01 Asm Lithography Bv Afbeeldingsapparaat voorzien van een focusfout- en/of scheefstandsdetectie-inrichting.
US5530552A (en) * 1992-12-09 1996-06-25 The United States Of America As Represented By The Secretary Of The Army Double sided wafer, alignment technique
WO1997032241A1 (en) * 1996-02-15 1997-09-04 Philips Electronics N.V. Method of determining the radiation dose in a lithographic apparatus, and test mask and apparatus for performing the method
DE69704998T2 (de) * 1996-03-15 2001-09-27 Asm Lithography Bv Ausrichtungsvorrichtung und lithographischer apparat mit einer solchen vorrichtung

Also Published As

Publication number Publication date
EP0963573A1 (de) 1999-12-15
EP0963573B1 (de) 2004-11-17
JP2001514804A (ja) 2001-09-11
WO1999034258A1 (en) 1999-07-08
JP3996212B2 (ja) 2007-10-24
DE69827608T2 (de) 2005-11-24
US6160622A (en) 2000-12-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee