DE69819935T2 - Halbleiter-bildaufnahmevorrichtung - Google Patents
Halbleiter-bildaufnahmevorrichtung Download PDFInfo
- Publication number
- DE69819935T2 DE69819935T2 DE69819935T DE69819935T DE69819935T2 DE 69819935 T2 DE69819935 T2 DE 69819935T2 DE 69819935 T DE69819935 T DE 69819935T DE 69819935 T DE69819935 T DE 69819935T DE 69819935 T2 DE69819935 T2 DE 69819935T2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- charge storage
- contacts
- contact
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 60
- 238000003384 imaging method Methods 0.000 claims description 26
- 108700005085 Switch Genes Proteins 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000009518 sodium iodide Nutrition 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000002591 computed tomography Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000009206 nuclear medicine Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/IB1998/000386 WO1999045411A1 (en) | 1997-02-18 | 1998-03-06 | Semiconductor imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69819935D1 DE69819935D1 (de) | 2003-12-24 |
| DE69819935T2 true DE69819935T2 (de) | 2004-11-11 |
Family
ID=11004701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69819935T Expired - Lifetime DE69819935T2 (de) | 1998-03-06 | 1998-03-06 | Halbleiter-bildaufnahmevorrichtung |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4315593B2 (https=) |
| AT (1) | ATE254770T1 (https=) |
| DE (1) | DE69819935T2 (https=) |
| IL (1) | IL137978A0 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005045895B3 (de) * | 2005-09-26 | 2007-06-14 | Siemens Ag | CMOS Röntgenflachdetektor |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1554760B1 (en) * | 2002-10-25 | 2009-08-19 | Ipl Intellectual Property Licensing Limited | Circuit substrate and method |
| WO2020109668A1 (en) * | 2018-11-29 | 2020-06-04 | Oy Ajat Ltd. | Detector circuit |
-
1998
- 1998-03-06 IL IL13797898A patent/IL137978A0/xx unknown
- 1998-03-06 AT AT98905592T patent/ATE254770T1/de not_active IP Right Cessation
- 1998-03-06 DE DE69819935T patent/DE69819935T2/de not_active Expired - Lifetime
- 1998-03-06 JP JP2000534893A patent/JP4315593B2/ja not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005045895B3 (de) * | 2005-09-26 | 2007-06-14 | Siemens Ag | CMOS Röntgenflachdetektor |
| US7622719B2 (en) | 2005-09-26 | 2009-11-24 | Siemens Aktiengesellschaft | CMOS flat X-ray detector |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002506213A (ja) | 2002-02-26 |
| ATE254770T1 (de) | 2003-12-15 |
| JP4315593B2 (ja) | 2009-08-19 |
| IL137978A0 (en) | 2001-10-31 |
| DE69819935D1 (de) | 2003-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: GOLDPOWER LTD., TORTOLA, VG |
|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: IPL INTELLECTUAL PROPERTY LICENSING LTD., LIMA, CY |