JP4315593B2 - 半導体撮像装置および撮像システム - Google Patents

半導体撮像装置および撮像システム Download PDF

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JP4315593B2
JP4315593B2 JP2000534893A JP2000534893A JP4315593B2 JP 4315593 B2 JP4315593 B2 JP 4315593B2 JP 2000534893 A JP2000534893 A JP 2000534893A JP 2000534893 A JP2000534893 A JP 2000534893A JP 4315593 B2 JP4315593 B2 JP 4315593B2
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charge collection
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imaging device
charge
substrate
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JP2002506213A (ja
JP2002506213A5 (https=
Inventor
スパルテイオテイス,コンスタンテイノス,イー
ピユーステイア,ヨウニ,イラリ
カウング,テイエラング
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アイピーエル・インテレクチュアル・プロパティ・ライセンシング・リミテッド
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Priority claimed from PCT/IB1998/000386 external-priority patent/WO1999045411A1/en
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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
JP2000534893A 1998-03-06 1998-03-06 半導体撮像装置および撮像システム Expired - Lifetime JP4315593B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB1998/000386 WO1999045411A1 (en) 1997-02-18 1998-03-06 Semiconductor imaging device

Publications (3)

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JP2002506213A JP2002506213A (ja) 2002-02-26
JP2002506213A5 JP2002506213A5 (https=) 2005-12-22
JP4315593B2 true JP4315593B2 (ja) 2009-08-19

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JP2000534893A Expired - Lifetime JP4315593B2 (ja) 1998-03-06 1998-03-06 半導体撮像装置および撮像システム

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JP (1) JP4315593B2 (https=)
AT (1) ATE254770T1 (https=)
DE (1) DE69819935T2 (https=)
IL (1) IL137978A0 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1554760B1 (en) * 2002-10-25 2009-08-19 Ipl Intellectual Property Licensing Limited Circuit substrate and method
DE102005045895B3 (de) * 2005-09-26 2007-06-14 Siemens Ag CMOS Röntgenflachdetektor
WO2020109668A1 (en) * 2018-11-29 2020-06-04 Oy Ajat Ltd. Detector circuit

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JP2002506213A (ja) 2002-02-26
ATE254770T1 (de) 2003-12-15
IL137978A0 (en) 2001-10-31
DE69819935T2 (de) 2004-11-11
DE69819935D1 (de) 2003-12-24

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