DE69818183D1 - SOI-MOSFET und Verfahren zu dessen Herstellung - Google Patents
SOI-MOSFET und Verfahren zu dessen HerstellungInfo
- Publication number
- DE69818183D1 DE69818183D1 DE69818183T DE69818183T DE69818183D1 DE 69818183 D1 DE69818183 D1 DE 69818183D1 DE 69818183 T DE69818183 T DE 69818183T DE 69818183 T DE69818183 T DE 69818183T DE 69818183 D1 DE69818183 D1 DE 69818183D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- soi mosfet
- soi
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24148297 | 1997-09-05 | ||
JP24148297A JP3337953B2 (ja) | 1997-09-05 | 1997-09-05 | Soi・mosfet及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69818183D1 true DE69818183D1 (de) | 2003-10-23 |
DE69818183T2 DE69818183T2 (de) | 2004-06-03 |
Family
ID=17074977
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69818183T Expired - Fee Related DE69818183T2 (de) | 1997-09-05 | 1998-06-29 | SOI-MOSFET und Verfahren zu dessen Herstellung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6288425B1 (de) |
EP (1) | EP0902482B1 (de) |
JP (1) | JP3337953B2 (de) |
KR (1) | KR100329055B1 (de) |
DE (1) | DE69818183T2 (de) |
TW (1) | TW500258U (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6156589A (en) * | 1998-09-03 | 2000-12-05 | Micron Technology, Inc. | Compact SOI body contact link |
US6740912B1 (en) * | 1999-06-24 | 2004-05-25 | Agere Systems Inc. | Semiconductor device free of LLD regions |
US6362082B1 (en) * | 1999-06-28 | 2002-03-26 | Intel Corporation | Methodology for control of short channel effects in MOS transistors |
JP3573056B2 (ja) * | 1999-07-16 | 2004-10-06 | セイコーエプソン株式会社 | 半導体装置、半導体ゲートアレイおよび電気光学装置および電子機器 |
JP2001036092A (ja) | 1999-07-23 | 2001-02-09 | Mitsubishi Electric Corp | 半導体装置 |
KR100343288B1 (ko) * | 1999-10-25 | 2002-07-15 | 윤종용 | 에스오아이 모스 트랜지스터의 플로팅 바디 효과를제거하기 위한 에스오아이 반도체 집적회로 및 그 제조방법 |
US6521959B2 (en) | 1999-10-25 | 2003-02-18 | Samsung Electronics Co., Ltd. | SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same |
JP3608456B2 (ja) * | 1999-12-08 | 2005-01-12 | セイコーエプソン株式会社 | Soi構造のmis電界効果トランジスタの製造方法 |
JP3504212B2 (ja) * | 2000-04-04 | 2004-03-08 | シャープ株式会社 | Soi構造の半導体装置 |
KR100365411B1 (ko) * | 2000-06-30 | 2002-12-18 | 주식회사 하이닉스반도체 | 절연층상의 실리콘 금속 산화물 전계 효과 트랜지스터의제조 방법 |
US6512269B1 (en) * | 2000-09-07 | 2003-01-28 | International Business Machines Corporation | High-voltage high-speed SOI MOSFET |
US6479866B1 (en) * | 2000-11-14 | 2002-11-12 | Advanced Micro Devices, Inc. | SOI device with self-aligned selective damage implant, and method |
CN1147935C (zh) * | 2000-12-18 | 2004-04-28 | 黄敞 | 互补偶载场效应晶体管及其片上系统 |
JP2002185008A (ja) * | 2000-12-19 | 2002-06-28 | Hitachi Ltd | 薄膜トランジスタ |
US6538284B1 (en) * | 2001-02-02 | 2003-03-25 | Advanced Micro Devices, Inc. | SOI device with body recombination region, and method |
US6509613B1 (en) * | 2001-05-04 | 2003-01-21 | Advanced Micro Devices, Inc. | Self-aligned floating body control for SOI device through leakage enhanced buried oxide |
US7122863B1 (en) | 2001-05-07 | 2006-10-17 | Advanced Micro Devices, Inc. | SOI device with structure for enhancing carrier recombination and method of fabricating same |
US6528851B1 (en) * | 2001-05-31 | 2003-03-04 | Advanced Micro Devices, Inc. | Post-silicidation implant for introducing recombination center in body of SOI MOSFET |
US6407428B1 (en) * | 2001-06-15 | 2002-06-18 | Advanced Micro Devices, Inc. | Field effect transistor with a buried and confined metal plate to control short channel effects |
JP4134545B2 (ja) | 2001-10-02 | 2008-08-20 | 日本電気株式会社 | 半導体装置 |
US6828632B2 (en) * | 2002-07-18 | 2004-12-07 | Micron Technology, Inc. | Stable PD-SOI devices and methods |
KR100985581B1 (ko) | 2003-04-30 | 2010-10-06 | 매그나칩 반도체 유한회사 | 반도체 소자 및 그 제조방법 |
EP1739738A3 (de) * | 2005-06-30 | 2009-04-01 | STMicroelectronics (Crolles 2) SAS | Speicherzelle mit einem MOS-Transistor mit isoliertem Körper mit verstärktem Speichereffekt |
KR100650901B1 (ko) * | 2005-12-29 | 2006-11-28 | 동부일렉트로닉스 주식회사 | 매립 게이트를 갖는 금속 산화물 반도체 트랜지스터 |
DE102005063092B3 (de) * | 2005-12-30 | 2007-07-19 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement mit einer Kontaktstruktur mit erhöhter Ätzselektivität |
US7704844B2 (en) * | 2007-10-04 | 2010-04-27 | International Business Machines Corporation | High performance MOSFET |
GB201202128D0 (en) * | 2012-02-08 | 2012-03-21 | Univ Leeds | Novel material |
CN113363323B (zh) * | 2020-03-05 | 2023-08-18 | 苏州大学 | 单栅场效应晶体管器件及调控其驱动电流的方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5678156A (en) | 1979-11-30 | 1981-06-26 | Fujitsu Ltd | Charge pump semiconductor memory |
US4563805A (en) * | 1984-03-08 | 1986-01-14 | Standard Telephones And Cables, Plc | Manufacture of MOSFET with metal silicide contact |
JPH0626252B2 (ja) | 1985-12-06 | 1994-04-06 | 株式会社日立製作所 | 半導体装置 |
US4965213A (en) | 1988-02-01 | 1990-10-23 | Texas Instruments Incorporated | Silicon-on-insulator transistor with body node to source node connection |
JPH02178965A (ja) | 1988-12-29 | 1990-07-11 | Nippondenso Co Ltd | 絶縁分離型電界効果半導体装置 |
US5296727A (en) | 1990-08-24 | 1994-03-22 | Fujitsu Limited | Double gate FET and process for manufacturing same |
JPH05218425A (ja) | 1992-01-31 | 1993-08-27 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果型半導体装置およびその製造方法 |
TW222345B (en) * | 1992-02-25 | 1994-04-11 | Semicondustor Energy Res Co Ltd | Semiconductor and its manufacturing method |
US5463237A (en) | 1993-11-04 | 1995-10-31 | Victor Company Of Japan, Ltd. | MOSFET device having depletion layer |
JP3222380B2 (ja) | 1996-04-25 | 2001-10-29 | シャープ株式会社 | 電界効果トランジスタ、および、cmosトランジスタ |
-
1997
- 1997-09-05 JP JP24148297A patent/JP3337953B2/ja not_active Expired - Fee Related
-
1998
- 1998-06-18 TW TW090216904U patent/TW500258U/zh not_active IP Right Cessation
- 1998-06-18 US US09/099,107 patent/US6288425B1/en not_active Expired - Lifetime
- 1998-06-29 EP EP98305138A patent/EP0902482B1/de not_active Expired - Lifetime
- 1998-06-29 DE DE69818183T patent/DE69818183T2/de not_active Expired - Fee Related
- 1998-07-02 KR KR1019980026541A patent/KR100329055B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6288425B1 (en) | 2001-09-11 |
JP3337953B2 (ja) | 2002-10-28 |
JPH1187719A (ja) | 1999-03-30 |
KR100329055B1 (ko) | 2002-08-21 |
KR19990029240A (ko) | 1999-04-26 |
EP0902482B1 (de) | 2003-09-17 |
TW500258U (en) | 2002-08-21 |
EP0902482A1 (de) | 1999-03-17 |
DE69818183T2 (de) | 2004-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69818183D1 (de) | SOI-MOSFET und Verfahren zu dessen Herstellung | |
DE69711138D1 (de) | Feldeffekttransistor und Verfahren zu dessen Herstellung | |
DE69811010D1 (de) | Photovoltaisches Bauelement und Verfahren zu dessen Herstellung | |
DE69838817D1 (de) | Disinfektionsmittel und verfahren zu dessen herstellung | |
DE69630732D1 (de) | Mehrzelliges Dämpfungselement und Verfahren zur dessen Herstellung | |
DE69636166D1 (de) | Klebstoffzusammensetzung und verfahren zu ihrer herstellung | |
ATE372570T1 (de) | Umgossener transponder und verfahren zu dessen herstellung | |
DE69829780D1 (de) | Optischer film und verfahren zu dessen herstellung | |
DE69723439D1 (de) | Display und verfahren für digitaloszilloskop | |
DE69720293D1 (de) | Fingergriff für einbefestigunssystem und verfahren zu dessen herstellung | |
DE69834401D1 (de) | Businterfacesystem und verfahren | |
DE69941054D1 (de) | Isosorbid enthaltende poyester und verfahren zu deren herstellung | |
DE69529493D1 (de) | Anzeigevorrichtung und Verfahren zu ihrer Herstellung | |
DE19781684T1 (de) | Flachkabel und Verfahren zu dessen Herstellung | |
DE69942382D1 (de) | Sensor und verfahren zu dessen herstellung | |
DE60018049D1 (de) | Ionisationsstab und verfahren zu dessen herstellung | |
DE60009385D1 (de) | Elektro-optischer Modulator und Verfahren zu dessen Herstellung | |
DE69918466D1 (de) | Beleuchtungsvorrichtung und verfahren zu ihrer herstellung | |
DE59914950D1 (de) | Feldeffektgesteuerter transistor und verfahren zu dessen herstellung | |
DE69905326D1 (de) | Sollerschlitz und Verfahren zu dessen Herstellung | |
DE59804240D1 (de) | Entlüftungsvorrichtung und verfahren zu ihrer herstellung | |
DE69818720D1 (de) | Heteroübergangsfeldeffekttransistor und Verfahren zu dessen Herstellung | |
DE69708336D1 (de) | Luftreifen und verfahren zu deren herstellung | |
DE69801795D1 (de) | Indolyl-pyrrolylidenmethylpyrrol-derivate und verfahren zu ihrer herstellung | |
DE59913422D1 (de) | Femfet-vorrichtung und verfahren zu deren herstellung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |