DE69817518D1 - Verfahren zur Herstellung einer integrieten Schaltungsstruktur durch Entfernung einer Opferschicht - Google Patents

Verfahren zur Herstellung einer integrieten Schaltungsstruktur durch Entfernung einer Opferschicht

Info

Publication number
DE69817518D1
DE69817518D1 DE69817518T DE69817518T DE69817518D1 DE 69817518 D1 DE69817518 D1 DE 69817518D1 DE 69817518 T DE69817518 T DE 69817518T DE 69817518 T DE69817518 T DE 69817518T DE 69817518 D1 DE69817518 D1 DE 69817518D1
Authority
DE
Germany
Prior art keywords
producing
integrated circuit
sacrificial layer
circuit structure
sacrificial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69817518T
Other languages
English (en)
Inventor
Pietro Montanini
Marco Ferrera
Laura Castoldi
Ilaria Gelmi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP97830345A external-priority patent/EP0890978B1/de
Priority claimed from EP97830406A external-priority patent/EP0895276A1/de
Priority claimed from EP97830407A external-priority patent/EP0895090B1/de
Priority claimed from EP97830537A external-priority patent/EP0911606A1/de
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69817518D1 publication Critical patent/DE69817518D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
    • B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/033—Trenches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/05—Temporary protection of devices or parts of the devices during manufacturing
    • B81C2201/053—Depositing a protective layers

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
DE69817518T 1997-07-10 1998-04-30 Verfahren zur Herstellung einer integrieten Schaltungsstruktur durch Entfernung einer Opferschicht Expired - Lifetime DE69817518D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP97830345A EP0890978B1 (de) 1997-07-10 1997-07-10 Verfahren zur Herstellung von hochempfindlichen, kapazitiven und resonierenden integrierten Sensoren, insbesondere Beschleunigungsmesser und Kreisel, und damit hergestellte Sensoren
EP97830406A EP0895276A1 (de) 1997-07-31 1997-07-31 Verfahren zum Herstellen integrierter Mikrostrukturen von Einkristall-Halbleitermaterialien
EP97830407A EP0895090B1 (de) 1997-07-31 1997-07-31 Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden
EP97830537A EP0911606A1 (de) 1997-10-23 1997-10-23 Integrierter Winkelgeschwindigkeitssensor und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
DE69817518D1 true DE69817518D1 (de) 2003-10-02

Family

ID=27808693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69817518T Expired - Lifetime DE69817518D1 (de) 1997-07-10 1998-04-30 Verfahren zur Herstellung einer integrieten Schaltungsstruktur durch Entfernung einer Opferschicht

Country Status (4)

Country Link
US (1) US6197655B1 (de)
EP (1) EP0922944B1 (de)
JP (1) JPH11150096A (de)
DE (1) DE69817518D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0915513A1 (de) * 1997-10-23 1999-05-12 STMicroelectronics S.r.l. Integrierte Spule mit hohem Gütefaktor und deren Herstellungsverfahren
DE19752208A1 (de) * 1997-11-25 1999-06-02 Bosch Gmbh Robert Thermischer Membransensor und Verfahren zu seiner Herstellung
JP3214441B2 (ja) * 1998-04-10 2001-10-02 日本電気株式会社 半導体装置及びその製造方法
EP1039529B1 (de) 1999-03-22 2006-12-13 STMicroelectronics S.r.l. Verfahren zur Herstellung einer mikrointegrierten Struktur mit vergrabener Verdrahtung, speziell eines Mikroaktuators für ein Festplattenlaufwerk
JP3430091B2 (ja) * 1999-12-01 2003-07-28 Ｎｅｃエレクトロニクス株式会社 エッチングマスク及びエッチングマスクを用いたコンタクトホールの形成方法並びにその方法で形成した半導体装置
DE10244785A1 (de) * 2002-09-26 2004-04-08 Robert Bosch Gmbh Verfahren und mikromechanisches Bauelement
US6693355B1 (en) 2003-05-27 2004-02-17 Motorola, Inc. Method of manufacturing a semiconductor device with an air gap formed using a photosensitive material
EP1617178B1 (de) * 2004-07-12 2017-04-12 STMicroelectronics Srl Mikroelektromechanische Struktur mit elektrisch isolierten Gebieten und Verfahren zu ihrer Herstellung
FR2887243B1 (fr) 2005-06-15 2008-02-15 Altis Semiconductor Snc Procede de fabrication d'objets sub-micrometriques suspendus et application a la caracterisation mecanique desdits objets
JP4774902B2 (ja) * 2005-10-17 2011-09-21 セイコーエプソン株式会社 Ｍｅｍｓ素子の製造方法
CN103983276B (zh) * 2014-04-29 2017-01-04 北京航天控制仪器研究所 一种基于导航基准系的三框架四轴惯性平台误差标定方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1548520A (en) * 1976-08-27 1979-07-18 Tokyo Shibaura Electric Co Method of manufacturing a semiconductor device
US5369544A (en) * 1993-04-05 1994-11-29 Ford Motor Company Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
US5438015A (en) * 1994-05-11 1995-08-01 United Microelectronics Corp. Silicon-on-insulator technique with buried gap
US5516710A (en) * 1994-11-10 1996-05-14 Northern Telecom Limited Method of forming a transistor
DE69632950T2 (de) * 1996-07-31 2005-08-25 Stmicroelectronics S.R.L., Agrate Brianza Integrierte Mikrostrukturen aus Halbleitermaterial und ein Verfahren zu deren Herstellung

Also Published As

Publication number Publication date
EP0922944A2 (de) 1999-06-16
EP0922944B1 (de) 2003-08-27
EP0922944A3 (de) 1999-11-10
JPH11150096A (ja) 1999-06-02
US6197655B1 (en) 2001-03-06

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Legal Events

Date Code Title Description
8332 No legal effect for de