DE69813787D1 - Verfahren und vorrichtung zum aktivieren von verunreinigungen in einem halbleiter - Google Patents
Verfahren und vorrichtung zum aktivieren von verunreinigungen in einem halbleiterInfo
- Publication number
- DE69813787D1 DE69813787D1 DE69813787T DE69813787T DE69813787D1 DE 69813787 D1 DE69813787 D1 DE 69813787D1 DE 69813787 T DE69813787 T DE 69813787T DE 69813787 T DE69813787 T DE 69813787T DE 69813787 D1 DE69813787 D1 DE 69813787D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- activating impurities
- activating
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003213 activating effect Effects 0.000 title 1
- 239000012535 impurity Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32777197 | 1997-11-28 | ||
PCT/JP1998/005383 WO1999028960A1 (fr) | 1997-11-28 | 1998-11-30 | Procede et dispositif d'activation d'impuretes dans des semi-conducteurs |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69813787D1 true DE69813787D1 (de) | 2003-05-28 |
DE69813787T2 DE69813787T2 (de) | 2003-10-23 |
Family
ID=18202809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69813787T Expired - Fee Related DE69813787T2 (de) | 1997-11-28 | 1998-11-30 | Verfahren und vorrichtung zum aktivieren von verunreinigungen in einem halbleiter |
Country Status (7)
Country | Link |
---|---|
US (2) | US6255201B1 (de) |
EP (1) | EP0971397B1 (de) |
KR (1) | KR100413569B1 (de) |
CN (1) | CN1110068C (de) |
CA (1) | CA2278578A1 (de) |
DE (1) | DE69813787T2 (de) |
WO (1) | WO1999028960A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7749910B2 (en) * | 2001-07-04 | 2010-07-06 | S.O.I.Tec Silicon On Insulator Technologies | Method of reducing the surface roughness of a semiconductor wafer |
US7883628B2 (en) * | 2001-07-04 | 2011-02-08 | S.O.I.Tec Silicon On Insulator Technologies | Method of reducing the surface roughness of a semiconductor wafer |
FR2827078B1 (fr) * | 2001-07-04 | 2005-02-04 | Soitec Silicon On Insulator | Procede de diminution de rugosite de surface |
US6767799B2 (en) * | 2001-12-28 | 2004-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Laser beam irradiation method |
JP2004158627A (ja) * | 2002-11-06 | 2004-06-03 | Renesas Technology Corp | 半導体装置の製造方法 |
KR20040046644A (ko) * | 2002-11-28 | 2004-06-05 | 이형규 | 레이저 활성화를 이용한 화합물 반도체 소자의 제조방법 |
DE10308646B4 (de) * | 2003-01-31 | 2008-07-10 | Osram Opto Semiconductors Gmbh | Halbleitersubstrat für optoelektronische Bauelemente und Verfahren zu dessen Herstellung |
US20050104072A1 (en) * | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
US20050106876A1 (en) * | 2003-10-09 | 2005-05-19 | Taylor Charles A.Ii | Apparatus and method for real time measurement of substrate temperatures for use in semiconductor growth and wafer processing |
KR100610016B1 (ko) * | 2004-11-18 | 2006-08-08 | 삼성전자주식회사 | 반도체 디바이스 제조를 위한 불순물 원자 활성화 장치 및그 방법 |
US7951632B1 (en) * | 2005-01-26 | 2011-05-31 | University Of Central Florida | Optical device and method of making |
US20060267021A1 (en) * | 2005-05-27 | 2006-11-30 | General Electric Company | Power devices and methods of manufacture |
US7851343B2 (en) * | 2007-06-14 | 2010-12-14 | Cree, Inc. | Methods of forming ohmic layers through ablation capping layers |
TWI543264B (zh) * | 2010-03-31 | 2016-07-21 | 應用材料股份有限公司 | 雷射光束定位系統 |
JP5569376B2 (ja) * | 2010-12-07 | 2014-08-13 | 住友電気工業株式会社 | 半導体装置の製造方法 |
CN102501077B (zh) * | 2011-11-15 | 2014-05-14 | 吉林大学 | 一种仿生耐磨高可靠性铸铁滚动机床导轨及其制作方法 |
CN106469647B (zh) * | 2015-08-21 | 2019-03-19 | 南京励盛半导体科技有限公司 | 一种碳化硅半导体器件的掺杂制造工艺 |
CN106469646B (zh) * | 2015-08-21 | 2019-08-06 | 南京励盛半导体科技有限公司 | 一种碳化硅器件用离子注入来形成高掺杂的制造方法 |
KR20240095343A (ko) | 2021-11-10 | 2024-06-25 | 실라나 유브이 테크놀로지스 피티이 리미티드 | 에피택셜 산화물 물질, 구조 및 소자 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3792379A (en) * | 1972-03-07 | 1974-02-12 | Bell Telephone Labor Inc | Millimeter wave devices utilizing electrically polarized media |
JPS4963419A (de) * | 1972-10-18 | 1974-06-19 | ||
JPS57102016A (en) * | 1980-12-17 | 1982-06-24 | Hitachi Ltd | Pattern generator |
US4379727A (en) | 1981-07-08 | 1983-04-12 | International Business Machines Corporation | Method of laser annealing of subsurface ion implanted regions |
US4439245A (en) * | 1982-01-25 | 1984-03-27 | Rca Corporation | Electromagnetic radiation annealing of semiconductor material |
USRE33274E (en) * | 1985-09-13 | 1990-07-24 | Xerox Corporation | Selective disordering of well structures by laser annealing |
JPH0824104B2 (ja) | 1991-03-18 | 1996-03-06 | 株式会社半導体エネルギー研究所 | 半導体材料およびその作製方法 |
JP3118307B2 (ja) * | 1992-04-20 | 2000-12-18 | 株式会社トクヤマ | α−メチル−2−フリルアクリル酸無水物 |
JP3437863B2 (ja) | 1993-01-18 | 2003-08-18 | 株式会社半導体エネルギー研究所 | Mis型半導体装置の作製方法 |
EP0652308B1 (de) * | 1993-10-14 | 2002-03-27 | Neuralsystems Corporation | Verfahren und Vorrichtung zur Herstellung eines Einkristallinen dünnen Films |
JPH08148443A (ja) * | 1994-11-24 | 1996-06-07 | Agency Of Ind Science & Technol | 不純物のイオン注入方法 |
US5930591A (en) * | 1997-04-23 | 1999-07-27 | Litton Systems Canada Limited | High resolution, low voltage flat-panel radiation imaging sensors |
US6201253B1 (en) * | 1998-10-22 | 2001-03-13 | Lsi Logic Corporation | Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system |
-
1998
- 1998-11-30 CA CA002278578A patent/CA2278578A1/en not_active Abandoned
- 1998-11-30 EP EP98955993A patent/EP0971397B1/de not_active Expired - Lifetime
- 1998-11-30 CN CN98802095A patent/CN1110068C/zh not_active Expired - Fee Related
- 1998-11-30 KR KR10-1999-7006520A patent/KR100413569B1/ko not_active IP Right Cessation
- 1998-11-30 WO PCT/JP1998/005383 patent/WO1999028960A1/ja active IP Right Grant
- 1998-11-30 US US09/341,464 patent/US6255201B1/en not_active Expired - Fee Related
- 1998-11-30 DE DE69813787T patent/DE69813787T2/de not_active Expired - Fee Related
-
2001
- 2001-05-11 US US09/852,656 patent/US6577386B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69813787T2 (de) | 2003-10-23 |
US6577386B2 (en) | 2003-06-10 |
EP0971397A4 (de) | 2000-08-30 |
EP0971397B1 (de) | 2003-04-23 |
US20010027001A1 (en) | 2001-10-04 |
CN1244948A (zh) | 2000-02-16 |
CA2278578A1 (en) | 1999-06-10 |
KR20000070291A (ko) | 2000-11-25 |
WO1999028960A1 (fr) | 1999-06-10 |
KR100413569B1 (ko) | 2003-12-31 |
EP0971397A1 (de) | 2000-01-12 |
US6255201B1 (en) | 2001-07-03 |
CN1110068C (zh) | 2003-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |