DE69810948D1 - Fulleren enthaltende struktur und verfahren zu deren herstellung - Google Patents

Fulleren enthaltende struktur und verfahren zu deren herstellung

Info

Publication number
DE69810948D1
DE69810948D1 DE69810948T DE69810948T DE69810948D1 DE 69810948 D1 DE69810948 D1 DE 69810948D1 DE 69810948 T DE69810948 T DE 69810948T DE 69810948 T DE69810948 T DE 69810948T DE 69810948 D1 DE69810948 D1 DE 69810948D1
Authority
DE
Germany
Prior art keywords
production
containing structure
full containing
full
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69810948T
Other languages
English (en)
Other versions
DE69810948T2 (de
Inventor
Shun-Ichiro Tanaka
Bingshe Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Toshiba Corp
Japan Science and Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Japan Science and Technology Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69810948D1 publication Critical patent/DE69810948D1/de
Publication of DE69810948T2 publication Critical patent/DE69810948T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/152—Fullerenes
    • C01B32/154—Preparation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/102—Fullerene type base or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Laminated Bodies (AREA)
DE69810948T 1997-03-24 1998-03-20 Fulleren enthaltende struktur und verfahren zu deren herstellung Expired - Lifetime DE69810948T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9069426A JPH10265207A (ja) 1997-03-24 1997-03-24 フラーレン含有構造体およびその製造方法
PCT/JP1998/001206 WO1998042619A1 (fr) 1997-03-24 1998-03-20 Structure contenant du fullerene et son procede de production

Publications (2)

Publication Number Publication Date
DE69810948D1 true DE69810948D1 (de) 2003-02-27
DE69810948T2 DE69810948T2 (de) 2003-11-27

Family

ID=13402293

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69810948T Expired - Lifetime DE69810948T2 (de) 1997-03-24 1998-03-20 Fulleren enthaltende struktur und verfahren zu deren herstellung

Country Status (7)

Country Link
US (1) US6251522B1 (de)
EP (1) EP1018487B1 (de)
JP (1) JPH10265207A (de)
KR (1) KR100356426B1 (de)
CN (1) CN1099374C (de)
DE (1) DE69810948T2 (de)
WO (1) WO1998042619A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100385867B1 (ko) * 1999-06-15 2003-06-02 일진나노텍 주식회사 고순도의 탄소나노튜브를 합성하는 방법
US6793967B1 (en) 1999-06-25 2004-09-21 Sony Corporation Carbonaceous complex structure and manufacturing method therefor
US6599961B1 (en) * 2000-02-01 2003-07-29 University Of Kentucky Research Foundation Polymethylmethacrylate augmented with carbon nanotubes
JP2002105623A (ja) * 2000-09-27 2002-04-10 Kobe Steel Ltd カーボンオニオン薄膜およびその製造方法
JP2002193606A (ja) * 2000-12-22 2002-07-10 Nec Corp 超伝導材料及びその製造方法
AU2002334784A1 (en) * 2001-10-01 2003-04-14 Tda Research, Inc. Derivatization and solubilization of insoluble classes of fullerenes
KR100466159B1 (ko) * 2001-11-21 2005-01-14 재단법인서울대학교산학협력재단 탄소 나노튜브의 밴드 갭 변형방법과 이를 이용한 나노양자소자 및 그의 제조방법
KR100519418B1 (ko) * 2002-02-28 2005-10-07 재단법인서울대학교산학협력재단 신규한 구조와 물성을 보유한 탄소 미세 입자
JP3829789B2 (ja) * 2002-10-22 2006-10-04 トヨタ自動車株式会社 多重管カーボンナノチューブ製造方法
JP4409192B2 (ja) * 2003-03-25 2010-02-03 独立行政法人科学技術振興機構 非晶質炭素膜成形体及びその製造方法
US7097906B2 (en) 2003-06-05 2006-08-29 Lockheed Martin Corporation Pure carbon isotropic alloy of allotropic forms of carbon including single-walled carbon nanotubes and diamond-like carbon
KR101103470B1 (ko) * 2004-02-27 2012-01-09 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 탄소계 박막 및 그 제조 방법, 및 이 박막을 이용한 부재
US20070292698A1 (en) * 2004-03-26 2007-12-20 Luna Innovations Incorporated Trimetaspheres as Dry Lubricants, Wet Lubricants, Lubricant Additives, Lubricant Coatings, Corrosion-Resistant Coatings and Thermally-Conductive Materials
JP5131603B2 (ja) * 2005-01-12 2013-01-30 独立行政法人科学技術振興機構 炭素系薄膜の製造方法
US20060275564A1 (en) * 2005-06-01 2006-12-07 Michael Grah Method of activating the shrink characteristic of a film
US20070025918A1 (en) * 2005-07-28 2007-02-01 General Electric Company Magnetic resonance imaging (MRI) agents: water soluble carbon-13 enriched fullerene and carbon nanotubes for use with dynamic nuclear polarization
US7678841B2 (en) * 2005-08-19 2010-03-16 Cryovac, Inc. Increasing the gas transmission rate of a film comprising fullerenes
US8377419B2 (en) * 2005-09-28 2013-02-19 The President And Fellows Of Harvard College Hyperpolarized solid materials with long spin relaxation times for use as imaging agents in magnetic resonance imaging
US20080284429A1 (en) * 2005-12-10 2008-11-20 The President And Fellows Of Harvard College Situ Hyperpolarization of Imaging Agents
US20090252686A1 (en) * 2006-01-11 2009-10-08 President And Fellows Of Harvard College Ex Vivo Hyperpolarization of Imaging Agents
US8759811B2 (en) * 2006-02-14 2014-06-24 Raytheon Company Particle encapsulated nanoswitch
JP5205672B2 (ja) * 2007-08-29 2013-06-05 独立行政法人物質・材料研究機構 フラーレン細線付き基盤とその製造方法
CN101553084B (zh) * 2008-04-01 2010-12-08 富葵精密组件(深圳)有限公司 线路基板及线路基板的制作方法
JP2010030854A (ja) * 2008-07-30 2010-02-12 Toyota Central R&D Labs Inc カーボンオニオン粒子分散膜及びその製造方法
US20100092390A1 (en) * 2008-10-09 2010-04-15 President And Fellows Of Harvard College Methods for Making Particles Having Long Spin-Lattice Relaxation Times
CN102001646B (zh) * 2010-12-16 2012-06-27 中国科学院高能物理研究所 碳纳米材料合成装置及方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5543378A (en) * 1993-10-13 1996-08-06 E. I. Du Pont De Nemours And Company Carbon nanostructures encapsulating palladium
JP3544237B2 (ja) * 1995-02-09 2004-07-21 独立行政法人 科学技術振興機構 巨大フラーレンの製造方法
JP3434926B2 (ja) 1995-02-09 2003-08-11 科学技術振興事業団 巨大フラーレンの製造方法
JP3544267B2 (ja) * 1996-05-22 2004-07-21 独立行政法人 科学技術振興機構 巨大フラーレンの製造方法
US6017630A (en) * 1996-05-22 2000-01-25 Research Development Corporation Ultrafine particle and production method thereof, production method of ultrafine particle bonded body, and fullerene and production method thereof

Also Published As

Publication number Publication date
DE69810948T2 (de) 2003-11-27
KR20010005564A (ko) 2001-01-15
EP1018487A4 (de) 2000-07-12
KR100356426B1 (ko) 2002-10-19
CN1099374C (zh) 2003-01-22
CN1257458A (zh) 2000-06-21
WO1998042619A1 (fr) 1998-10-01
JPH10265207A (ja) 1998-10-06
US6251522B1 (en) 2001-06-26
EP1018487A1 (de) 2000-07-12
EP1018487B1 (de) 2003-01-22

Similar Documents

Publication Publication Date Title
DE69810948D1 (de) Fulleren enthaltende struktur und verfahren zu deren herstellung
DE69720523D1 (de) Polyolefin-polyethylenoxid-mischungen und verfahren zu deren herstellung
DE69736009D1 (de) Poröse strukturen und verfahren zu deren herstellung
DE59809806D1 (de) Chemische mikroreaktoren und verfahren zu deren herstellung
DE19680763T1 (de) Mikroelektromechanische Struktur und Verfahren zu deren Herstellung
DE59603890D1 (de) Bürste und verfahren zu deren herstellung
DE69830510D1 (de) Verbundwerkstoffe und verfahren zu deren herstellung
DE69941054D1 (de) Isosorbid enthaltende poyester und verfahren zu deren herstellung
DE69839964D1 (de) Einseitige leiterplatte und verfahren zu deren herstellung
DE69804217D1 (de) Dekorfolie und verfahren zu deren herstellung
DE69705222D1 (de) Gitteranordnung und verfahren zu deren herstellung
DE59807086D1 (de) Cholesterische effektschichten und verfahren zu deren herstellung
DE69523596D1 (de) Verbesserte verbundwerkstoffe und verfahren zu deren herstellung
DE69710484D1 (de) Übergezogene süsswaren und verfahren zu deren herstellung
DE59502879D1 (de) Ausweiskarte und verfahren zu deren herstellung
DE69608403D1 (de) Elektronenemittierende elektrode und verfahren zu deren herstellung
ATE279506T1 (de) Tabletten und verfahren zu deren herstellung
DE69818644D1 (de) Silikonzusammensetzungen und verfahren zu deren herstellung
DE69815126D1 (de) Pyrimidinderivate und verfahren zu deren herstellung
DE69826317D1 (de) Progesterontablette und verfahren zu deren herstellung
DE69616516D1 (de) Wasserschutzzusammensetzungen und verfahren zu deren herstellung
DE69932361D1 (de) Trennschicht und verfahren zu deren herstellung
DE69721989D1 (de) Trennfolie und verfahren zu deren herstellung
DE59608456D1 (de) Photodiode und verfahren zu deren herstellung
DE69608359D1 (de) Hexaazaisowurtzitan-derivate und verfahren zu deren herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JAPAN SCIENCE AND TECHNOLOGY AGENCY, KAWAGUCHI, JP