DE69810374D1 - Vorrichtung und Verfahren zur Verhinderung von Kondensation in einer Abgasleitung - Google Patents

Vorrichtung und Verfahren zur Verhinderung von Kondensation in einer Abgasleitung

Info

Publication number
DE69810374D1
DE69810374D1 DE69810374T DE69810374T DE69810374D1 DE 69810374 D1 DE69810374 D1 DE 69810374D1 DE 69810374 T DE69810374 T DE 69810374T DE 69810374 T DE69810374 T DE 69810374T DE 69810374 D1 DE69810374 D1 DE 69810374D1
Authority
DE
Germany
Prior art keywords
exhaust pipe
preventing condensation
condensation
preventing
exhaust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69810374T
Other languages
English (en)
Inventor
Paul B Comita
David K Carlson
Norma B Riley
Doria W Fan
Rekha Ranganathan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69810374D1 publication Critical patent/DE69810374D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DE69810374T 1997-04-11 1998-04-14 Vorrichtung und Verfahren zur Verhinderung von Kondensation in einer Abgasleitung Expired - Lifetime DE69810374D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/835,955 US6153260A (en) 1997-04-11 1997-04-11 Method for heating exhaust gas in a substrate reactor

Publications (1)

Publication Number Publication Date
DE69810374D1 true DE69810374D1 (de) 2003-02-06

Family

ID=25270882

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69810374T Expired - Lifetime DE69810374D1 (de) 1997-04-11 1998-04-14 Vorrichtung und Verfahren zur Verhinderung von Kondensation in einer Abgasleitung

Country Status (5)

Country Link
US (2) US6153260A (de)
EP (1) EP0870852B1 (de)
JP (1) JP4219441B2 (de)
KR (1) KR19980081271A (de)
DE (1) DE69810374D1 (de)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1082625C (zh) * 1999-07-07 2002-04-10 张建辉 一种带有三通式出入口的压电陶瓷泵
US6494959B1 (en) 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
US6802906B2 (en) * 2000-07-21 2004-10-12 Applied Materials, Inc. Emissivity-change-free pumping plate kit in a single wafer chamber
US6455814B1 (en) * 2001-11-07 2002-09-24 Applied Materials, Inc. Backside heating chamber for emissivity independent thermal processes
JP3758579B2 (ja) * 2002-01-23 2006-03-22 信越半導体株式会社 熱処理装置および熱処理方法
JP4379585B2 (ja) * 2003-12-17 2009-12-09 信越半導体株式会社 気相成長装置およびエピタキシャルウェーハの製造方法
KR100865580B1 (ko) * 2004-06-15 2008-10-28 가부시키가이샤 히다치 고쿠사이 덴키 기판처리장치 및 반도체장치의 제조방법
WO2005124845A1 (ja) * 2004-06-15 2005-12-29 Hitachi Kokusai Electric Inc. 基板処理装置及び半導体装置の製造方法
GB0521944D0 (en) * 2005-10-27 2005-12-07 Boc Group Plc Method of treating gas
JP4779644B2 (ja) * 2005-12-27 2011-09-28 株式会社Ｓｕｍｃｏ エピタキシャル装置
US20070267143A1 (en) * 2006-05-16 2007-11-22 Applied Materials, Inc. In situ cleaning of CVD system exhaust
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
KR101353334B1 (ko) 2006-11-22 2014-02-18 소이텍 갈륨 질화물 증착에서의 반응 가스 감소
EP2066496B1 (de) 2006-11-22 2013-04-10 Soitec Anlage zur massenherstellung von gruppe-iii-v-halbleitermaterialien
WO2008064077A2 (en) 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies Methods for high volume manufacture of group iii-v semiconductor materials
JP5244814B2 (ja) 2006-11-22 2013-07-24 ソイテック 化学気相成長チャンバ用の温度制御されたパージゲート弁を使用した方法、アセンブリ及びシステム
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
KR101330156B1 (ko) 2006-11-22 2013-12-20 소이텍 삼염화 갈륨 주입 구조
US20080220150A1 (en) * 2007-03-05 2008-09-11 Applied Materials, Inc. Microbatch deposition chamber with radiant heating
JP5104250B2 (ja) * 2007-11-27 2012-12-19 住友電気工業株式会社 半導体製造装置
JP5195175B2 (ja) * 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5276388B2 (ja) * 2008-09-04 2013-08-28 東京エレクトロン株式会社 成膜装置及び基板処理装置
JP5276387B2 (ja) * 2008-09-04 2013-08-28 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
US8425977B2 (en) * 2008-09-29 2013-04-23 Applied Materials, Inc. Substrate processing chamber with off-center gas delivery funnel
KR101537215B1 (ko) * 2008-10-27 2015-07-20 주성엔지니어링(주) 기판처리장치
JP5218148B2 (ja) * 2009-02-26 2013-06-26 住友電気工業株式会社 半導体製造装置
CN102422394B (zh) * 2009-03-16 2015-10-14 奥塔装置公司 用于气相沉积的反应器盖子组件
JP5276679B2 (ja) * 2011-02-01 2013-08-28 東京エレクトロン株式会社 成膜装置
KR101884003B1 (ko) * 2011-03-22 2018-07-31 어플라이드 머티어리얼스, 인코포레이티드 화학 기상 증착 챔버를 위한 라이너 조립체
DE102011007632B3 (de) 2011-04-18 2012-02-16 Siltronic Ag Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe
US9512520B2 (en) * 2011-04-25 2016-12-06 Applied Materials, Inc. Semiconductor substrate processing system
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
US9682398B2 (en) 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
US9870919B2 (en) 2012-04-25 2018-01-16 Applied Materials, Inc. Process chamber having separate process gas and purge gas regions
US20130284097A1 (en) * 2012-04-25 2013-10-31 Joseph M. Ranish Gas distribution module for insertion in lateral flow chambers
US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
US9322097B2 (en) * 2013-03-13 2016-04-26 Applied Materials, Inc. EPI base ring
KR102264053B1 (ko) * 2013-05-01 2021-06-11 어플라이드 머티어리얼스, 인코포레이티드 Ｅｐｉ 챔버 유동 조작을 위한 주입구 및 배기구 설계
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
US10053777B2 (en) * 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
WO2015195256A1 (en) * 2014-06-18 2015-12-23 Applied Materials, Inc. One-piece injector assembly
US10446420B2 (en) * 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN109811406B (zh) * 2017-11-20 2021-09-17 北京北方华创微电子装备有限公司 石英件、工艺腔室和半导体处理设备
JP6998839B2 (ja) * 2018-06-25 2022-01-18 グローバルウェーハズ・ジャパン株式会社 エピタキシャルシリコンウェーハの製造方法
KR102607844B1 (ko) * 2020-07-10 2023-11-30 세메스 주식회사 기판 처리 장치 및 기판 지지 유닛
EP3957776A1 (de) 2020-08-17 2022-02-23 Siltronic AG Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe
EP3996130B1 (de) 2020-11-09 2023-03-08 Siltronic AG Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe
US20220322492A1 (en) * 2021-04-06 2022-10-06 Applied Materials, Inc. Epitaxial deposition chamber
CN113249707A (zh) * 2021-04-21 2021-08-13 拓荆科技股份有限公司 一种薄膜沉积装置和薄膜沉积方法
US12091749B2 (en) * 2021-05-11 2024-09-17 Applied Materials, Inc. Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet
KR20230012803A (ko) * 2021-07-16 2023-01-26 주성엔지니어링(주) 기판처리장치용 상부돔 및 기판처리장치
US20240141493A1 (en) * 2022-10-27 2024-05-02 Applied Materials, Inc. Single piece or two piece susceptor

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133073A (ja) * 1985-12-05 1987-06-16 Anelva Corp 減圧気相成長装置
JPS62224677A (ja) * 1986-03-26 1987-10-02 Toshiba Corp 薄膜形成装置及び薄膜形成方法
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US5094885A (en) * 1990-10-12 1992-03-10 Genus, Inc. Differential pressure cvd chuck
US5447570A (en) 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
US5578532A (en) * 1990-07-16 1996-11-26 Novellus Systems, Inc. Wafer surface protection in a gas deposition process
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
US5275976A (en) * 1990-12-27 1994-01-04 Texas Instruments Incorporated Process chamber purge module for semiconductor processing equipment
DE4142877A1 (de) * 1990-12-28 1992-07-02 Mitsubishi Electric Corp Cvd-verfahren und vorrichtung zu dessen durchfuehrung
SE469079B (sv) * 1992-03-17 1993-05-10 Kamyr Ab Silanordning med backspolningsorgan
EP0606751B1 (de) * 1993-01-13 2002-03-06 Applied Materials, Inc. Verfahren zur Abscheidung von Polysiliziumschichten mit einer verbesserten Uniformität und dazugehörige Vorrichtung
US5326725A (en) * 1993-03-11 1994-07-05 Applied Materials, Inc. Clamping ring and susceptor therefor
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
JP2934565B2 (ja) * 1993-05-21 1999-08-16 三菱電機株式会社 半導体製造装置及び半導体製造方法
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
US5614247A (en) * 1994-09-30 1997-03-25 International Business Machines Corporation Apparatus for chemical vapor deposition of aluminum oxide

Also Published As

Publication number Publication date
JP4219441B2 (ja) 2009-02-04
EP0870852B1 (de) 2003-01-02
US6153260A (en) 2000-11-28
JPH1145861A (ja) 1999-02-16
KR19980081271A (ko) 1998-11-25
US6254686B1 (en) 2001-07-03
EP0870852A1 (de) 1998-10-14

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