DE69802856T2 - Vorrichtung und Methode zur Detektion von elektromagnetischer Strahlung oder ionisierender Teilchen - Google Patents
Vorrichtung und Methode zur Detektion von elektromagnetischer Strahlung oder ionisierender TeilchenInfo
- Publication number
- DE69802856T2 DE69802856T2 DE69802856T DE69802856T DE69802856T2 DE 69802856 T2 DE69802856 T2 DE 69802856T2 DE 69802856 T DE69802856 T DE 69802856T DE 69802856 T DE69802856 T DE 69802856T DE 69802856 T2 DE69802856 T2 DE 69802856T2
- Authority
- DE
- Germany
- Prior art keywords
- detection
- electromagnetic radiation
- ionizing particles
- ionizing
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 title 1
- 230000005670 electromagnetic radiation Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000002245 particle Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measurement Of Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT97MI000423A IT1290553B1 (it) | 1997-02-27 | 1997-02-27 | Rivelatore dell'energia e della posizione di incidenza di radiazioni elettromagnetiche o di particelle ionizzanti a deriva controllata |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69802856D1 DE69802856D1 (de) | 2002-01-24 |
DE69802856T2 true DE69802856T2 (de) | 2002-08-14 |
Family
ID=11376194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69802856T Expired - Lifetime DE69802856T2 (de) | 1997-02-27 | 1998-02-24 | Vorrichtung und Methode zur Detektion von elektromagnetischer Strahlung oder ionisierender Teilchen |
Country Status (4)
Country | Link |
---|---|
US (1) | US6249033B1 (de) |
EP (1) | EP0862226B1 (de) |
DE (1) | DE69802856T2 (de) |
IT (1) | IT1290553B1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11719636B2 (en) | 2014-08-08 | 2023-08-08 | Quantum-Si Incorporated | Integrated device for temporal binning of received photons |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1583150A1 (de) | 2004-03-31 | 2005-10-05 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Bildsensor mit grossflächigen, hochgeschwindigen, hochempfindlichen Pixeln |
US20070072332A1 (en) * | 2005-09-26 | 2007-03-29 | Josef Kemmer | Semiconductor radiation detectors and method for fabrication thereof |
EP1873834B1 (de) * | 2006-06-29 | 2008-12-10 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Löschbarriere, insbesondere für einem Halbleiterdetektor, und zugehöriges Betriebsverfahren |
GB2446429A (en) | 2006-12-08 | 2008-08-13 | E2V Tech | Photosensor with variable sensing area |
US8698091B2 (en) | 2009-06-10 | 2014-04-15 | Moxtek, Inc. | Semiconductor MOS entrance window for radiation detectors |
US8314468B2 (en) * | 2009-06-10 | 2012-11-20 | Moxtek, Inc. | Variable ring width SDD |
US20110192984A1 (en) * | 2010-02-09 | 2011-08-11 | Weinberg Medical Physics Llc | Method and equipment for producing drift detectors |
WO2013063032A1 (en) * | 2011-10-25 | 2013-05-02 | Brookhaven Science Associates, Llc | Spiral biasing adaptor for use in si drift detectors and si drift detector arrays |
US9530902B2 (en) * | 2012-06-20 | 2016-12-27 | Oxford Instruments Analytical Oy | Two-dimensional guard structure and a radiation detector with the same |
DE102013015403B4 (de) | 2012-09-20 | 2021-11-25 | Infineon Technologies Ag | Herstellung eines Bildwandlergeräts und Bildwandlergerät |
ITUB20159390A1 (it) * | 2015-12-24 | 2017-06-24 | Fond Bruno Kessler | Rivelatore a semiconduttore, rivelatore di radiazione e apparecchiatura di rivelazione di radiazione. |
MX2019007530A (es) * | 2016-12-22 | 2019-08-16 | Quantum Si Inc | Fotodetector integrado con agrupamiento de pixeles directo. |
IT201700122669A1 (it) * | 2017-10-27 | 2019-04-27 | Lfoundry Srl | Sensore integrato di radiazione ionizzante e di particelle ionizzanti |
US20210335866A1 (en) * | 2020-04-28 | 2021-10-28 | Lawrence Livermore National Security, Llc | High temporal resolution solid-state x-ray detection system |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2118846A1 (en) * | 1970-12-22 | 1972-08-04 | Radiotechnique Compelec | Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material |
EP0179102B1 (de) * | 1984-04-25 | 1992-07-01 | KEMMER, Josef, Dr. | Verarmtes halbleiterelement mit einem potential-minimum für majoritätsträger |
JP2557750B2 (ja) * | 1991-02-27 | 1996-11-27 | 三洋電機株式会社 | 光半導体装置 |
US5466954A (en) * | 1994-12-21 | 1995-11-14 | Honeywell Inc. | Shunt phototransistor with reverse bias protection |
US5889313A (en) * | 1996-02-08 | 1999-03-30 | University Of Hawaii | Three-dimensional architecture for solid state radiation detectors |
-
1997
- 1997-02-27 IT IT97MI000423A patent/IT1290553B1/it active IP Right Grant
-
1998
- 1998-02-24 DE DE69802856T patent/DE69802856T2/de not_active Expired - Lifetime
- 1998-02-24 EP EP98830089A patent/EP0862226B1/de not_active Expired - Lifetime
- 1998-02-27 US US09/032,130 patent/US6249033B1/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11719636B2 (en) | 2014-08-08 | 2023-08-08 | Quantum-Si Incorporated | Integrated device for temporal binning of received photons |
Also Published As
Publication number | Publication date |
---|---|
US6249033B1 (en) | 2001-06-19 |
IT1290553B1 (it) | 1998-12-10 |
EP0862226A3 (de) | 1999-04-07 |
ITMI970423A1 (it) | 1998-08-27 |
EP0862226B1 (de) | 2001-12-12 |
EP0862226A2 (de) | 1998-09-02 |
DE69802856D1 (de) | 2002-01-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |