DE69739349D1 - Gas für trocknerätzung - Google Patents

Gas für trocknerätzung

Info

Publication number
DE69739349D1
DE69739349D1 DE69739349T DE69739349T DE69739349D1 DE 69739349 D1 DE69739349 D1 DE 69739349D1 DE 69739349 T DE69739349 T DE 69739349T DE 69739349 T DE69739349 T DE 69739349T DE 69739349 D1 DE69739349 D1 DE 69739349D1
Authority
DE
Germany
Prior art keywords
drying
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69739349T
Other languages
English (en)
Inventor
Akira Sekiya
Tetsuya Takagaki
Shinsuke Morikawa
Shunichi Yamashita
Tsuyoshi Takaichi
Yasuo Hibino
Yasuhisa Furutaka
Masami Iwasaki
Norifumi Ohtsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JAPAN ELECTRONICS AND INFORMAT
Daikin Industries Ltd
Mechanical Social Systems Foundation
National Institute of Advanced Industrial Science and Technology AIST
AGC Inc
Original Assignee
JAPAN ELECTRONICS AND INFORMAT
Daikin Industries Ltd
Asahi Glass Co Ltd
Mechanical Social Systems Foundation
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JAPAN ELECTRONICS AND INFORMAT, Daikin Industries Ltd, Asahi Glass Co Ltd, Mechanical Social Systems Foundation, National Institute of Advanced Industrial Science and Technology AIST filed Critical JAPAN ELECTRONICS AND INFORMAT
Application granted granted Critical
Publication of DE69739349D1 publication Critical patent/DE69739349D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
DE69739349T 1996-11-05 1997-11-05 Gas für trocknerätzung Expired - Lifetime DE69739349D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8308742A JP2972786B2 (ja) 1996-11-05 1996-11-05 ドライエッチング用ガス
PCT/JP1997/004028 WO1998020526A1 (fr) 1996-11-05 1997-11-05 Gaz d'attaque chimique a sec

Publications (1)

Publication Number Publication Date
DE69739349D1 true DE69739349D1 (de) 2009-05-20

Family

ID=17984747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69739349T Expired - Lifetime DE69739349D1 (de) 1996-11-05 1997-11-05 Gas für trocknerätzung

Country Status (6)

Country Link
US (1) US6514425B1 (de)
EP (1) EP1014433B1 (de)
JP (1) JP2972786B2 (de)
KR (1) KR100563796B1 (de)
DE (1) DE69739349D1 (de)
WO (1) WO1998020526A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4112198B2 (ja) * 2000-09-11 2008-07-02 財団法人地球環境産業技術研究機構 クリーニングガス及びエッチングガス、並びにチャンバークリーニング方法及びエッチング方法
KR100451656B1 (ko) * 2000-12-02 2004-10-08 정성도 식초콩의 제조방법
KR20020045898A (ko) * 2000-12-11 2002-06-20 박종섭 불화 에테르 계 식각가스를 이용한 식각방법
US8691372B2 (en) * 2007-02-15 2014-04-08 E I Du Pont De Nemours And Company Articles comprising high melt flow ionomeric compositions
US20080196760A1 (en) 2007-02-15 2008-08-21 Richard Allen Hayes Articles such as safety laminates and solar cell modules containing high melt flow acid copolymer compositions
EP2286465B1 (de) 2008-06-02 2019-08-14 E. I. du Pont de Nemours and Company Solarzellenmodul mit einer einkapselungsschicht von geringer opazität
US20100154867A1 (en) * 2008-12-19 2010-06-24 E. I. Du Pont De Nemours And Company Mechanically reliable solar cell modules
CN102741987B (zh) 2010-02-01 2016-03-02 中央硝子株式会社 干蚀刻剂以及使用其的干蚀刻方法
JP5434970B2 (ja) 2010-07-12 2014-03-05 セントラル硝子株式会社 ドライエッチング剤
JP2013030531A (ja) 2011-07-27 2013-02-07 Central Glass Co Ltd ドライエッチング剤
TWI670768B (zh) * 2014-10-30 2019-09-01 日商日本瑞翁股份有限公司 電漿蝕刻方法
JP6788176B2 (ja) * 2015-04-06 2020-11-25 セントラル硝子株式会社 ドライエッチングガスおよびドライエッチング方法
CN108780749B (zh) * 2016-03-16 2022-10-14 日本瑞翁株式会社 等离子体蚀刻方法
WO2018159368A1 (ja) 2017-02-28 2018-09-07 セントラル硝子株式会社 ドライエッチング剤、ドライエッチング方法及び半導体装置の製造方法
US10304692B1 (en) * 2017-11-28 2019-05-28 International Business Machines Corporation Method of forming field effect transistor (FET) circuits, and forming integrated circuit (IC) chips with the FET circuits
KR102104240B1 (ko) * 2018-08-13 2020-04-24 아주대학교 산학협력단 플라즈마 식각 방법
KR102327416B1 (ko) * 2019-08-20 2021-11-16 아주대학교산학협력단 플라즈마 식각 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3000954C2 (de) * 1980-01-12 1982-04-22 Standard Elektrik Lorenz Ag, 7000 Stuttgart Verfahren zum Ätzen von Glasoberflächen, insbesondere bei der Glasfaser-Lichtleiter-Herstellung
JPS6077429A (ja) * 1983-10-04 1985-05-02 Asahi Glass Co Ltd ドライエツチング方法
US5213621A (en) 1991-10-11 1993-05-25 Air Products And Chemicals, Inc. Halogenated carboxylic acid cleaning agents for fabricating integrated circuits and a process for using the same
JP3256707B2 (ja) * 1992-12-28 2002-02-12 川崎マイクロエレクトロニクス株式会社 銅薄膜のドライエッチング方法
US5368687A (en) 1993-03-15 1994-11-29 Micron Technology, Inc. Semiconductor processing method of etching insulating inorganic metal oxide materials and method of cleaning metals from the surface of semiconductor wafers
JP3329038B2 (ja) * 1993-12-13 2002-09-30 ソニー株式会社 ドライエッチング方法
JP2904723B2 (ja) * 1995-04-21 1999-06-14 セントラル硝子株式会社 クリーニングガス
IL119598A0 (en) 1995-11-17 1997-02-18 Air Prod & Chem Plasma etch with trifluoroacetic acid or its derivatives
US5626775A (en) * 1996-05-13 1997-05-06 Air Products And Chemicals, Inc. Plasma etch with trifluoroacetic acid and derivatives
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6159859A (en) * 1998-06-09 2000-12-12 Air Products And Chemicals, Inc. Gas phase removal of SiO2 /metals from silicon

Also Published As

Publication number Publication date
JP2972786B2 (ja) 1999-11-08
KR20000053068A (ko) 2000-08-25
JPH10140151A (ja) 1998-05-26
EP1014433A4 (de) 2000-07-12
KR100563796B1 (ko) 2006-03-28
WO1998020526A1 (fr) 1998-05-14
EP1014433B1 (de) 2009-04-08
EP1014433A1 (de) 2000-06-28
US6514425B1 (en) 2003-02-04

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Legal Events

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