DE69738590T2 - Waferelektroentladungskontrolle durch eine Waferhebevorrichtung - Google Patents

Waferelektroentladungskontrolle durch eine Waferhebevorrichtung Download PDF

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Publication number
DE69738590T2
DE69738590T2 DE69738590T DE69738590T DE69738590T2 DE 69738590 T2 DE69738590 T2 DE 69738590T2 DE 69738590 T DE69738590 T DE 69738590T DE 69738590 T DE69738590 T DE 69738590T DE 69738590 T2 DE69738590 T2 DE 69738590T2
Authority
DE
Germany
Prior art keywords
substrate
assembly
lift
engaging element
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69738590T
Other languages
German (de)
English (en)
Other versions
DE69738590D1 (de
Inventor
Rajinder Dhindsa
Steven Franchuk
Carlos Manzanilla
Ken E. Tokunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE69738590D1 publication Critical patent/DE69738590D1/de
Application granted granted Critical
Publication of DE69738590T2 publication Critical patent/DE69738590T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dowels (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69738590T 1996-12-19 1997-12-18 Waferelektroentladungskontrolle durch eine Waferhebevorrichtung Expired - Lifetime DE69738590T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US769433 1985-08-26
US08/769,433 US5904779A (en) 1996-12-19 1996-12-19 Wafer electrical discharge control by wafer lifter system

Publications (2)

Publication Number Publication Date
DE69738590D1 DE69738590D1 (de) 2008-04-30
DE69738590T2 true DE69738590T2 (de) 2009-04-23

Family

ID=25085430

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69738590T Expired - Lifetime DE69738590T2 (de) 1996-12-19 1997-12-18 Waferelektroentladungskontrolle durch eine Waferhebevorrichtung
DE69733697T Expired - Lifetime DE69733697T2 (de) 1996-12-19 1997-12-18 Waferelektronenentladungskontrolle

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69733697T Expired - Lifetime DE69733697T2 (de) 1996-12-19 1997-12-18 Waferelektronenentladungskontrolle

Country Status (7)

Country Link
US (1) US5904779A (https=)
EP (2) EP0948805B1 (https=)
JP (1) JP4101299B2 (https=)
KR (1) KR20000057603A (https=)
AT (2) ATE389946T1 (https=)
DE (2) DE69738590T2 (https=)
WO (1) WO1998027577A1 (https=)

Families Citing this family (26)

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Publication number Priority date Publication date Assignee Title
US5955858A (en) 1997-02-14 1999-09-21 Applied Materials, Inc. Mechanically clamping robot wrist
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US6177023B1 (en) * 1997-07-11 2001-01-23 Applied Komatsu Technology, Inc. Method and apparatus for electrostatically maintaining substrate flatness
JP3374743B2 (ja) * 1998-03-05 2003-02-10 日本電気株式会社 基板熱処理装置及び同装置からの基板の分離方法
US6146504A (en) * 1998-05-21 2000-11-14 Applied Materials, Inc. Substrate support and lift apparatus and method
JP4394778B2 (ja) * 1999-09-22 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR100503897B1 (ko) * 2000-02-19 2005-07-25 엘지.필립스 엘시디 주식회사 건식식각 장치의 기판 파손방지 방법 및 건식식각 장치
JP3549188B2 (ja) * 2000-03-27 2004-08-04 日本エー・エス・エム株式会社 半導体基板への薄膜成膜方法
KR100378187B1 (ko) 2000-11-09 2003-03-29 삼성전자주식회사 정전척을 구비한 웨이퍼 지지대 및 이를 이용한 웨이퍼 디척킹 방법
US6646857B2 (en) * 2001-03-30 2003-11-11 Lam Research Corporation Semiconductor wafer lifting device and methods for implementing the same
US6673636B2 (en) * 2001-05-18 2004-01-06 Applied Materails Inc. Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers
KR100995715B1 (ko) * 2002-04-09 2010-11-19 파나소닉 주식회사 플라즈마 처리 방법 및 장치와 플라즈마 처리용 트레이
JP2005064284A (ja) * 2003-08-14 2005-03-10 Asm Japan Kk 半導体基板保持装置
US7013956B2 (en) 2003-09-02 2006-03-21 Thermal Corp. Heat pipe evaporator with porous valve
US20050067147A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Loop thermosyphon for cooling semiconductors during burn-in testing
US20050067146A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Two phase cooling system method for burn-in testing
US7129731B2 (en) * 2003-09-02 2006-10-31 Thermal Corp. Heat pipe with chilled liquid condenser system for burn-in testing
WO2006049085A1 (ja) * 2004-11-04 2006-05-11 Ulvac, Inc. 静電チャック装置
CN100362645C (zh) * 2005-12-07 2008-01-16 北京北方微电子基地设备工艺研究中心有限责任公司 顶针装置
US8270142B2 (en) * 2008-12-10 2012-09-18 Axcelis Technologies, Inc. De-clamping wafers from an electrostatic chuck
US8360844B2 (en) * 2010-03-13 2013-01-29 Marc B Schwartz Multiple wager, multiple potential winning outcome gaming platform
US9595464B2 (en) 2014-07-19 2017-03-14 Applied Materials, Inc. Apparatus and method for reducing substrate sliding in process chambers
US11387135B2 (en) * 2016-01-28 2022-07-12 Applied Materials, Inc. Conductive wafer lift pin o-ring gripper with resistor
US20190088518A1 (en) * 2017-09-20 2019-03-21 Applied Materials, Inc. Substrate support with cooled and conducting pins
KR102547860B1 (ko) 2020-08-10 2023-06-23 세메스 주식회사 기판 지지 부재 및 이를 구비하는 기판 처리 장치 및 방법
CN115250648B (zh) 2021-02-25 2025-11-11 株式会社日立高新技术 等离子处理装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69103915T2 (de) * 1990-01-25 1995-05-11 Applied Materials Inc Elektrostatische Klemmvorrichtung und Verfahren.
JP3230821B2 (ja) * 1991-01-28 2001-11-19 株式会社東芝 プッシャーピン付き静電チャック
JP3182615B2 (ja) * 1991-04-15 2001-07-03 アネルバ株式会社 プラズマ処理方法および装置
JP3027781B2 (ja) * 1992-02-13 2000-04-04 東京エレクトロン株式会社 プラズマ処理方法
JPH05275517A (ja) * 1992-03-30 1993-10-22 Fujitsu Ltd 基板離脱方法
JP3264391B2 (ja) * 1993-05-17 2002-03-11 東京エレクトロン株式会社 静電吸着体の離脱装置
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
JPH06338463A (ja) * 1993-05-28 1994-12-06 Toshiba Corp 半導体製造装置
JPH077072A (ja) * 1993-06-17 1995-01-10 Anelva Corp 静電チャック装置における基板の脱着方法および脱着機構
JP2817585B2 (ja) * 1993-09-10 1998-10-30 住友金属工業株式会社 試料の離脱方法
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
US5467249A (en) * 1993-12-20 1995-11-14 International Business Machines Corporation Electrostatic chuck with reference electrode
US5535507A (en) * 1993-12-20 1996-07-16 International Business Machines Corporation Method of making electrostatic chuck with oxide insulator
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
JP3608121B2 (ja) * 1994-03-18 2005-01-05 アネルバ株式会社 基板の機械的脱離機構およびその機構を用いた脱離方法
JPH08107139A (ja) * 1994-10-05 1996-04-23 Hitachi Ltd 絶縁性リング部材およびそれを用いた半導体製造装置
JPH08236601A (ja) * 1995-02-22 1996-09-13 Mitsubishi Electric Corp 静電チャック装置

Also Published As

Publication number Publication date
EP1435646A3 (en) 2006-05-10
DE69738590D1 (de) 2008-04-30
DE69733697T2 (de) 2006-05-24
US5904779A (en) 1999-05-18
WO1998027577A1 (en) 1998-06-25
DE69733697D1 (de) 2005-08-11
EP1435646B1 (en) 2008-03-19
EP1435646A2 (en) 2004-07-07
JP4101299B2 (ja) 2008-06-18
KR20000057603A (ko) 2000-09-25
JP2001506808A (ja) 2001-05-22
ATE389946T1 (de) 2008-04-15
EP0948805A1 (en) 1999-10-13
ATE299293T1 (de) 2005-07-15
EP0948805B1 (en) 2005-07-06

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