DE69737434D1 - Niedrigtemperatur-Aluminiumaufschmelzen für mehrschichtige Metallisierung - Google Patents
Niedrigtemperatur-Aluminiumaufschmelzen für mehrschichtige MetallisierungInfo
- Publication number
- DE69737434D1 DE69737434D1 DE69737434T DE69737434T DE69737434D1 DE 69737434 D1 DE69737434 D1 DE 69737434D1 DE 69737434 T DE69737434 T DE 69737434T DE 69737434 T DE69737434 T DE 69737434T DE 69737434 D1 DE69737434 D1 DE 69737434D1
- Authority
- DE
- Germany
- Prior art keywords
- low temperature
- temperature aluminum
- multilayer metallization
- aluminum reflow
- reflow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76882—Reflowing or applying of pressure to better fill the contact hole
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/741,255 US5926736A (en) | 1996-10-30 | 1996-10-30 | Low temperature aluminum reflow for multilevel metallization |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69737434D1 true DE69737434D1 (de) | 2007-04-19 |
Family
ID=24979981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69737434T Expired - Lifetime DE69737434D1 (de) | 1996-10-30 | 1997-10-30 | Niedrigtemperatur-Aluminiumaufschmelzen für mehrschichtige Metallisierung |
Country Status (4)
Country | Link |
---|---|
US (2) | US5926736A (de) |
EP (1) | EP0840370B1 (de) |
JP (1) | JP4799715B2 (de) |
DE (1) | DE69737434D1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5994217A (en) * | 1996-12-16 | 1999-11-30 | Chartered Semiconductor Manufacturing Ltd. | Post metallization stress relief annealing heat treatment for ARC TiN over aluminum layers |
US7510961B2 (en) * | 1997-02-14 | 2009-03-31 | Micron Technology, Inc. | Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure |
US6218277B1 (en) * | 1998-01-26 | 2001-04-17 | Texas Instruments Incorporated | Method for filling a via opening or contact opening in an integrated circuit |
JP2000133712A (ja) * | 1998-08-18 | 2000-05-12 | Seiko Epson Corp | 半導体装置の製造方法 |
US6399486B1 (en) * | 1999-11-22 | 2002-06-04 | Taiwan Semiconductor Manufacturing Company | Method of improved copper gap fill |
KR100390822B1 (ko) * | 1999-12-28 | 2003-07-10 | 주식회사 하이닉스반도체 | 이미지센서에서의 암전류 감소 방법 |
US6509274B1 (en) * | 2000-08-04 | 2003-01-21 | Applied Materials, Inc. | Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate |
US6903000B2 (en) * | 2001-12-28 | 2005-06-07 | Texas Instruments Incorporated | System for improving thermal stability of copper damascene structure |
CN101305454B (zh) * | 2005-11-07 | 2010-05-19 | 应用材料股份有限公司 | 形成光致电压接点和连线的方法 |
DE102007035837A1 (de) * | 2007-07-31 | 2009-02-05 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement mit einer Kornorientierungsschicht |
US20130045595A1 (en) * | 2011-08-16 | 2013-02-21 | Tsun-Min Cheng | Method for processing metal layer |
CN103187361A (zh) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | 铜互连层的制造方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62205792A (ja) | 1986-03-04 | 1987-09-10 | Lion Corp | アルカロイドの製造方法 |
US4782380A (en) * | 1987-01-22 | 1988-11-01 | Advanced Micro Devices, Inc. | Multilayer interconnection for integrated circuit structure having two or more conductive metal layers |
JPS6447051A (en) * | 1987-08-18 | 1989-02-21 | Fujitsu Ltd | Formation of multilayer interconnection |
EP0307272A3 (de) * | 1987-09-09 | 1989-07-12 | STMicroelectronics, Inc. | Halbleiterverbindungen aus einer Aluminiumlegierung mit einer Barriere-Schicht aus Titan oder Niobium hoher Reinheit |
JPH0316130A (ja) * | 1989-03-31 | 1991-01-24 | Oki Electric Ind Co Ltd | レーザフロー技術を用いた電極配線の形成方法 |
US4997518A (en) * | 1989-03-31 | 1991-03-05 | Oki Electric Industry Co., Ltd. | Method for forming an electrode layer by a laser flow technique |
US5658828A (en) * | 1989-11-30 | 1997-08-19 | Sgs-Thomson Microelectronics, Inc. | Method for forming an aluminum contact through an insulating layer |
US5066611A (en) * | 1990-08-31 | 1991-11-19 | Micron Technology, Inc. | Method for improving step coverage of a metallization layer on an integrated circuit by use of molybdenum as an anti-reflective coating |
KR960001601B1 (ko) * | 1992-01-23 | 1996-02-02 | 삼성전자주식회사 | 반도체 장치의 접촉구 매몰방법 및 구조 |
DE4200809C2 (de) * | 1991-03-20 | 1996-12-12 | Samsung Electronics Co Ltd | Verfahren zur Bildung einer metallischen Verdrahtungsschicht in einem Halbleiterbauelement |
JPH05267471A (ja) * | 1991-04-05 | 1993-10-15 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US5124780A (en) * | 1991-06-10 | 1992-06-23 | Micron Technology, Inc. | Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization |
JP3142310B2 (ja) * | 1991-07-05 | 2001-03-07 | 沖電気工業株式会社 | 半導体素子の製造方法 |
US5610105A (en) * | 1992-10-23 | 1997-03-11 | Vlsi Technology, Inc. | Densification in an intermetal dielectric film |
KR960010056B1 (ko) * | 1992-12-10 | 1996-07-25 | 삼성전자 주식회사 | 반도체장치 및 그 제조 방법 |
JPH06244287A (ja) * | 1993-02-15 | 1994-09-02 | Matsushita Electron Corp | 半導体装置の製造方法 |
JPH0774247A (ja) * | 1993-06-14 | 1995-03-17 | Sony Corp | 半導体装置及びその作製方法 |
JPH0758199A (ja) * | 1993-08-11 | 1995-03-03 | Kawasaki Steel Corp | 半導体装置の製造方法 |
KR0140646B1 (ko) * | 1994-01-12 | 1998-07-15 | 문정환 | 반도체장치의 제조방법 |
JPH0822966A (ja) * | 1994-07-05 | 1996-01-23 | Hitachi Ltd | 半導体装置及びその製造方法 |
JPH08153794A (ja) * | 1994-09-30 | 1996-06-11 | Ricoh Co Ltd | 半導体装置 |
TW290717B (en) * | 1994-10-28 | 1996-11-11 | Advanced Micro Devices Inc | Method to prevent formation of defects during multilayer interconnect processing |
US5523259A (en) * | 1994-12-05 | 1996-06-04 | At&T Corp. | Method of forming metal layers formed as a composite of sub-layers using Ti texture control layer |
JPH08241923A (ja) * | 1995-03-02 | 1996-09-17 | Sony Corp | 配線形成方法およびこれに用いる配線形成装置 |
US5668055A (en) * | 1995-05-05 | 1997-09-16 | Applied Materials, Inc. | Method of filling of contact openings and vias by self-extrusion of overlying compressively stressed matal layer |
JPH0917785A (ja) * | 1995-06-30 | 1997-01-17 | Sony Corp | 半導体装置のアルミニウム系金属配線 |
US5604155A (en) * | 1995-07-17 | 1997-02-18 | Winbond Electronics Corp. | Al-based contact formation process using Ti glue layer to prevent nodule-induced bridging |
-
1996
- 1996-10-30 US US08/741,255 patent/US5926736A/en not_active Expired - Lifetime
-
1997
- 1997-10-30 EP EP97308709A patent/EP0840370B1/de not_active Expired - Lifetime
- 1997-10-30 JP JP29822697A patent/JP4799715B2/ja not_active Expired - Lifetime
- 1997-10-30 DE DE69737434T patent/DE69737434D1/de not_active Expired - Lifetime
- 1997-12-03 US US08/984,596 patent/US6215188B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0840370A1 (de) | 1998-05-06 |
JPH10135212A (ja) | 1998-05-22 |
US6215188B1 (en) | 2001-04-10 |
JP4799715B2 (ja) | 2011-10-26 |
EP0840370B1 (de) | 2007-03-07 |
US5926736A (en) | 1999-07-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |