DE69734151T2 - Feststofftemperaturgeregelter substrathalter - Google Patents

Feststofftemperaturgeregelter substrathalter Download PDF

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Publication number
DE69734151T2
DE69734151T2 DE69734151T DE69734151T DE69734151T2 DE 69734151 T2 DE69734151 T2 DE 69734151T2 DE 69734151 T DE69734151 T DE 69734151T DE 69734151 T DE69734151 T DE 69734151T DE 69734151 T2 DE69734151 T2 DE 69734151T2
Authority
DE
Germany
Prior art keywords
substrate
thermoelectric modules
temperature
wafer
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69734151T
Other languages
German (de)
English (en)
Other versions
DE69734151D1 (de
Inventor
Rajinder Dhindsa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE69734151D1 publication Critical patent/DE69734151D1/de
Application granted granted Critical
Publication of DE69734151T2 publication Critical patent/DE69734151T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
DE69734151T 1996-03-29 1997-03-27 Feststofftemperaturgeregelter substrathalter Expired - Lifetime DE69734151T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/623,713 US5740016A (en) 1996-03-29 1996-03-29 Solid state temperature controlled substrate holder
US623713 1996-03-29
PCT/US1997/004960 WO1997037375A1 (en) 1996-03-29 1997-03-27 Solid state temperature controlled substrate holder

Publications (2)

Publication Number Publication Date
DE69734151D1 DE69734151D1 (de) 2005-10-13
DE69734151T2 true DE69734151T2 (de) 2006-06-29

Family

ID=24499133

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69734151T Expired - Lifetime DE69734151T2 (de) 1996-03-29 1997-03-27 Feststofftemperaturgeregelter substrathalter

Country Status (5)

Country Link
US (1) US5740016A (enExample)
EP (1) EP0890185B1 (enExample)
JP (1) JP4297976B2 (enExample)
DE (1) DE69734151T2 (enExample)
WO (1) WO1997037375A1 (enExample)

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DE10059665C1 (de) * 2000-12-01 2002-07-11 Steag Hamatech Ag Verfahren zum thermischen Behandeln von Substraten
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US8600543B2 (en) * 2008-11-10 2013-12-03 Kelk Ltd. Apparatus and method for controlling temperature of semiconductor wafers
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RU2393270C1 (ru) * 2008-12-03 2010-06-27 Учреждение Российской академии наук Институт прикладной физики РАН Свч плазменный реактор
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US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US8640714B2 (en) * 2009-11-12 2014-02-04 Philip Morris Usa Inc. Oral chewable tobacco product and method of manufacture thereof
CN105428295B (zh) * 2009-12-15 2020-08-11 朗姆研究公司 调节基板温度来改进关键尺寸（cd）的均匀性
JP5437910B2 (ja) * 2010-05-18 2014-03-12 株式会社Ｋｅｌｋ 温調装置
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US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
JP5715444B2 (ja) * 2011-02-28 2015-05-07 東京エレクトロン株式会社 載置装置
US9673037B2 (en) 2011-05-31 2017-06-06 Law Research Corporation Substrate freeze dry apparatus and method
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JP2015514661A (ja) 2012-02-29 2015-05-21 ハリス，ジョナサン・エイチ 過渡液相、窒化アルミニウム製部品の常圧接合
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US20140356985A1 (en) * 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
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JP6993297B2 (ja) * 2018-06-28 2022-01-13 株式会社日立製作所 電力変換装置
KR20220032616A (ko) 2019-07-16 2022-03-15 램 리써치 코포레이션 기판 프로세싱 시스템들을 위한 열전 냉각 페데스탈 (thermoelectric cooling pedestal)
JP7316179B2 (ja) 2019-10-04 2023-07-27 東京エレクトロン株式会社 基板支持台、及びプラズマ処理装置
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Also Published As

Publication number Publication date
JP2000508119A (ja) 2000-06-27
EP0890185B1 (en) 2005-09-07
US5740016A (en) 1998-04-14
DE69734151D1 (de) 2005-10-13
WO1997037375A1 (en) 1997-10-09
EP0890185A1 (en) 1999-01-13
JP4297976B2 (ja) 2009-07-15

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