DE69734011D1 - Verfahren und vorrichtung zur behandlung einer halbleiteroberfläche - Google Patents

Verfahren und vorrichtung zur behandlung einer halbleiteroberfläche

Info

Publication number
DE69734011D1
DE69734011D1 DE69734011T DE69734011T DE69734011D1 DE 69734011 D1 DE69734011 D1 DE 69734011D1 DE 69734011 T DE69734011 T DE 69734011T DE 69734011 T DE69734011 T DE 69734011T DE 69734011 D1 DE69734011 D1 DE 69734011D1
Authority
DE
Germany
Prior art keywords
molecules
treating
semiconductor
external bonds
saturating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69734011T
Other languages
English (en)
Other versions
DE69734011T2 (de
Inventor
Jean-Pierre Briand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite Pierre et Marie Curie Paris 6
Original Assignee
Universite Pierre et Marie Curie Paris 6
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universite Pierre et Marie Curie Paris 6 filed Critical Universite Pierre et Marie Curie Paris 6
Publication of DE69734011D1 publication Critical patent/DE69734011D1/de
Application granted granted Critical
Publication of DE69734011T2 publication Critical patent/DE69734011T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00841—Cleaning during or after manufacture
    • B81C1/00849—Cleaning during or after manufacture during manufacture
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69734011T 1996-12-31 1997-12-29 Verfahren und vorrichtung zur behandlung einer halbleiteroberfläche Expired - Lifetime DE69734011T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9616288A FR2757881B1 (fr) 1996-12-31 1996-12-31 Procede de traitement d'une surface d'un semi-conducteur, dispositif correspondant et semi-conducteur associe
PCT/FR1997/002441 WO1998029901A1 (fr) 1996-12-31 1997-12-29 Procede et dispositif de traitement d'une surface d'un semi-conducteur

Publications (2)

Publication Number Publication Date
DE69734011D1 true DE69734011D1 (de) 2005-09-22
DE69734011T2 DE69734011T2 (de) 2006-06-14

Family

ID=9499362

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69734011T Expired - Lifetime DE69734011T2 (de) 1996-12-31 1997-12-29 Verfahren und vorrichtung zur behandlung einer halbleiteroberfläche

Country Status (8)

Country Link
US (1) US6355574B1 (de)
EP (1) EP0950258B1 (de)
JP (1) JP2001508598A (de)
KR (1) KR20000062399A (de)
AT (1) ATE302471T1 (de)
DE (1) DE69734011T2 (de)
FR (1) FR2757881B1 (de)
WO (1) WO1998029901A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2793264B1 (fr) * 1999-05-07 2001-06-15 X Ion Procede de nettoyage d'une surface de substrat de silicium et application a la fabrication de composants electroniques integres
FR2793349B1 (fr) * 1999-05-07 2003-06-27 X Ion Procede de croissance d'une couche d'oxyde de silicium de faible epaisseur sur une surface de substrat de silicium et machine a deux reacteurs de mise en oeuvre
FR2804623B1 (fr) * 2000-02-09 2002-05-03 Univ Paris Curie Procede de traitement d'une surface de diamant et surface de diamant correspondante
RU2164718C1 (ru) * 2000-07-04 2001-03-27 Общество с ограниченной ответственностью "Агентство маркетинга научных разработок" Установка для формирования наноструктур на поверхности полупроводниковых пластин ионными пучками
FR2815770A1 (fr) * 2000-10-23 2002-04-26 X Ion Procede de lithographie ionique a haute selectivite
FR2849266A1 (fr) * 2002-12-18 2004-06-25 Gilles Borsoni Machine de traitement uniforme de surfaces d'echantillons par projection d'ions multicharges
FR2890231B1 (fr) * 2005-08-29 2009-10-09 Jean Pierre Briand Methode de fabrication de cathodes froides fonctionnant sous faibles tensions par irradiation de films minces de dlc avec des ions multicharges et surfaces emettrices correspondantes
US20080128641A1 (en) * 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
US20090124159A1 (en) * 2007-03-02 2009-05-14 Jean Pierre Briand Method of fabrication of cold cathodes on thin diamondlike carbon films irradiated with multicharged ions and field emissive corresponding surfaces
WO2013009698A1 (en) * 2011-07-08 2013-01-17 Medias Llc Devices for receiving periodic charging

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138918A (ja) * 1983-12-27 1985-07-23 Toshiba Corp 半導体装置の製造方法
JPH0712015B2 (ja) * 1988-11-18 1995-02-08 新技術事業団 シリコン固体表面へのパターン形成法
US5010040A (en) * 1988-12-30 1991-04-23 Mobil Solar Energy Corporation Method of fabricating solar cells
US5231055A (en) * 1989-01-13 1993-07-27 Texas Instruments Incorporated Method of forming composite interconnect system
FR2668642B1 (fr) * 1990-10-25 1993-11-05 Commissariat A Energie Atomique Source d'ions fortement charges a sonde polarisable et a resonance cyclotronique electronique.
JP3168593B2 (ja) * 1991-03-13 2001-05-21 株式会社島津製作所 高輝度集束イオンビームを用いた化合物の薄膜パターン生成方法
JP2920850B2 (ja) * 1991-03-25 1999-07-19 東京エレクトロン株式会社 半導体の表面処理方法及びその装置
JP3048749B2 (ja) * 1992-04-28 2000-06-05 キヤノン株式会社 薄膜形成方法
JP3334911B2 (ja) * 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法

Also Published As

Publication number Publication date
WO1998029901A1 (fr) 1998-07-09
FR2757881A1 (fr) 1998-07-03
EP0950258A1 (de) 1999-10-20
ATE302471T1 (de) 2005-09-15
KR20000062399A (ko) 2000-10-25
JP2001508598A (ja) 2001-06-26
US6355574B1 (en) 2002-03-12
DE69734011T2 (de) 2006-06-14
EP0950258B1 (de) 2005-08-17
FR2757881B1 (fr) 1999-04-09

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