DE69733859D1 - Layout-Struktur kapazitiver Elemente und deren Verbindungsleitungen auf einem Halbleiter - Google Patents

Layout-Struktur kapazitiver Elemente und deren Verbindungsleitungen auf einem Halbleiter

Info

Publication number
DE69733859D1
DE69733859D1 DE69733859T DE69733859T DE69733859D1 DE 69733859 D1 DE69733859 D1 DE 69733859D1 DE 69733859 T DE69733859 T DE 69733859T DE 69733859 T DE69733859 T DE 69733859T DE 69733859 D1 DE69733859 D1 DE 69733859D1
Authority
DE
Germany
Prior art keywords
semiconductor
connection lines
capacitive elements
layout structure
layout
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69733859T
Other languages
English (en)
Other versions
DE69733859T2 (de
Inventor
Yoshihiro Hirota
Matsumoto
Guoliang Shou
Kazunori Motohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69733859D1 publication Critical patent/DE69733859D1/de
Publication of DE69733859T2 publication Critical patent/DE69733859T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/919—Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69733859T 1996-05-30 1997-05-28 Layout-Struktur kapazitiver Elemente und deren Verbindungsleitungen auf einem Halbleiter Expired - Lifetime DE69733859T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15901996 1996-05-30
JP15901996A JP3182079B2 (ja) 1996-05-30 1996-05-30 半導体装置の容量素子の配線構造

Publications (2)

Publication Number Publication Date
DE69733859D1 true DE69733859D1 (de) 2005-09-08
DE69733859T2 DE69733859T2 (de) 2006-03-23

Family

ID=15684483

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69733859T Expired - Lifetime DE69733859T2 (de) 1996-05-30 1997-05-28 Layout-Struktur kapazitiver Elemente und deren Verbindungsleitungen auf einem Halbleiter

Country Status (5)

Country Link
US (1) US5892266A (de)
EP (1) EP0810663B1 (de)
JP (1) JP3182079B2 (de)
KR (1) KR100459017B1 (de)
DE (1) DE69733859T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW383414B (en) * 1997-03-05 2000-03-01 Tokyo Electron Ltd Photoresist agent processing method and photoresist agent processing system and evaluation method and processing apparatus for photoresist agent film
US6225678B1 (en) * 1998-12-23 2001-05-01 Microchip Technology Incorporated Layout technique for a matching capacitor array using a continuous top electrode
JP2005038883A (ja) * 2003-07-15 2005-02-10 Sanyo Electric Co Ltd 半導体装置、及び分圧回路
US7009276B2 (en) * 2003-09-26 2006-03-07 Kyocera Corporation Thin film capacitor, thin film capacitor array and electronic component
US11928412B2 (en) * 2020-09-30 2024-03-12 Changxin Memory Technologies, Inc. Method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192359A (ja) * 1984-03-14 1985-09-30 Nec Corp 半導体メモリ装置
JPS6134951A (ja) * 1984-07-26 1986-02-19 Toshiba Corp 半導体装置の容量評価用モニタ部
NL8403932A (nl) * 1984-12-24 1986-07-16 Philips Nv Geintegreerde schakeling met kapaciteiten van verschillende kapaciteitswaarden.
US4870541A (en) * 1987-12-16 1989-09-26 Ford Micro Electronics Shielded bar-cap
JPH01206642A (ja) * 1988-02-15 1989-08-18 Fujitsu Ltd 半導体装置における容量測定パターン及び容量測定方法
JPH02213159A (ja) * 1989-02-13 1990-08-24 Mitsubishi Electric Corp キャパシタ
JPH0438862A (ja) * 1990-06-04 1992-02-10 Nec Corp 半導体集積回路装置
JP2752832B2 (ja) * 1992-02-24 1998-05-18 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置
US5322438A (en) * 1993-06-18 1994-06-21 Silicon Systems, Inc. Layout scheme for precise capacitance ratios
GB9317530D0 (en) * 1993-08-21 1993-10-06 Westland Helicopters Fusible support devices for rotating shafts

Also Published As

Publication number Publication date
KR970077627A (ko) 1997-12-12
KR100459017B1 (ko) 2005-02-02
JPH09321228A (ja) 1997-12-12
DE69733859T2 (de) 2006-03-23
EP0810663B1 (de) 2005-08-03
US5892266A (en) 1999-04-06
EP0810663A1 (de) 1997-12-03
JP3182079B2 (ja) 2001-07-03

Similar Documents

Publication Publication Date Title
GB9822941D0 (en) Layout structure of semicondutor device
DE69637488D1 (de) Halbleiter und Halbleitermodul
DE69531571D1 (de) Verbesserungen in Bezug auf Halbleitervorrichtungen
KR970004021A (ko) 반도체 기억장치 및 반도체 집적회로장치
DE69615233D1 (de) Halbleiterspeicheranordnung mit einer Peripherieschaltung und einer Schnittstellenschaltung in einem Massivgebiet und mit Speicherzellen in einem Halbleiter-auf-Isolator-Gebiet
DE69832359D1 (de) Halbleitervorrichtung -anordnung und -schaltungen
DE69626485D1 (de) Schnittstellenbildung zwischen Direktspeicherzugriffsvorrichtung und einem nicht-ISA-Bus
DE59502357D1 (de) Modular aufgebaute und erweiterbare elektronische arbeitsfläche
GB9511567D0 (en) Wiring structure of semiconductor device and method for manufacturing the same
DE69530222D1 (de) Embolieelemente und gerät für ihre verabreichung
DE69839535D1 (de) D/A-Wandlerschaltung und Halbleiterbauelement
DE69613056D1 (de) Schnittstelleneinrichtung zwischen einem Rechner redundanter Architektur und einem Kommunikationsmittel
DE69628902D1 (de) Halbleitervorrichtung und Halbleitermodul
DE69709826D1 (de) Mehrere IDDQ Monitore auf einem Chip
AU9806998A (en) Integrated circuit layout methods and layout structures
DE69733859D1 (de) Layout-Struktur kapazitiver Elemente und deren Verbindungsleitungen auf einem Halbleiter
DE69631612D1 (de) Elektronische Geräte und deren Betriebsartsteuerung
DE69224827D1 (de) Auf einem Halbleitersubstrat integrierter Spiralwiderstand
DE69737189D1 (de) Elektronische geräte und deren herstellung
DE69632178D1 (de) Leistungshalbleitermodul und zusammengeschaltetes Leistungsmodul
DE68927598D1 (de) Potentialtopfstruktur und Halbleiteranordnung
DE69630556D1 (de) Halbleiteranordnung und Verdrahtungsverfahren
DE69836947D1 (de) Verbindung zwischen MOS-Transistor und Kapazität
DE69720685D1 (de) Einheit bestehend aus zwei elemente einer hoch- oder tiefbaustruktur und einer verbindungsvorrichtung
DE69812506D1 (de) Erdungsvorrichtung und deren Kabelerdungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition