DE69732650D1 - Halbleiter brückenelement mit oberflächenverbindung, vorrichtungen und verfahren - Google Patents

Halbleiter brückenelement mit oberflächenverbindung, vorrichtungen und verfahren

Info

Publication number
DE69732650D1
DE69732650D1 DE69732650T DE69732650T DE69732650D1 DE 69732650 D1 DE69732650 D1 DE 69732650D1 DE 69732650 T DE69732650 T DE 69732650T DE 69732650 T DE69732650 T DE 69732650T DE 69732650 D1 DE69732650 D1 DE 69732650D1
Authority
DE
Germany
Prior art keywords
devices
surface connection
bridge element
semiconductor bridge
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69732650T
Other languages
English (en)
Other versions
DE69732650T2 (de
Inventor
Bernardo Martinez-Tovar
A Montoya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ensign Bickford Aerospace and Defense Co
Original Assignee
SCB Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SCB Technologies Inc filed Critical SCB Technologies Inc
Application granted granted Critical
Publication of DE69732650D1 publication Critical patent/DE69732650D1/de
Publication of DE69732650T2 publication Critical patent/DE69732650T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F42—AMMUNITION; BLASTING
    • F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
    • F42B3/00—Blasting cartridges, i.e. case and explosive
    • F42B3/10—Initiators therefor
    • F42B3/12—Bridge initiators
    • F42B3/13—Bridge initiators with semiconductive bridge
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F42—AMMUNITION; BLASTING
    • F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
    • F42B3/00—Blasting cartridges, i.e. case and explosive
    • F42B3/10—Initiators therefor
    • F42B3/195—Manufacture
    • F42B3/198—Manufacture of electric initiator heads e.g., testing, machines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
  • Bridges Or Land Bridges (AREA)
DE69732650T 1996-12-23 1997-12-03 Halbleiter brückenelement mit oberflächenverbindung, vorrichtungen und verfahren Expired - Fee Related DE69732650T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US771536 1996-12-23
US08/771,536 US6054760A (en) 1996-12-23 1996-12-23 Surface-connectable semiconductor bridge elements and devices including the same
PCT/US1997/022426 WO1998028792A1 (en) 1996-12-23 1997-12-03 Surface connectable semiconductor bridge elements, devices and methods

Publications (2)

Publication Number Publication Date
DE69732650D1 true DE69732650D1 (de) 2005-04-07
DE69732650T2 DE69732650T2 (de) 2005-07-21

Family

ID=25092149

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69732650T Expired - Fee Related DE69732650T2 (de) 1996-12-23 1997-12-03 Halbleiter brückenelement mit oberflächenverbindung, vorrichtungen und verfahren

Country Status (9)

Country Link
US (1) US6054760A (de)
EP (1) EP0948812B1 (de)
JP (1) JP4326027B2 (de)
AU (1) AU717944B2 (de)
BR (1) BR9714516A (de)
CA (1) CA2274167A1 (de)
DE (1) DE69732650T2 (de)
NO (1) NO993048L (de)
WO (1) WO1998028792A1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100462980B1 (ko) * 1999-09-13 2004-12-23 비쉐이 메저먼츠 그룹, 인코포레이티드 반도체장치용 칩 스케일 표면 장착 패키지 및 그 제조공정
US7211877B1 (en) 1999-09-13 2007-05-01 Vishay-Siliconix Chip scale surface mount package for semiconductor device and process of fabricating the same
US6271060B1 (en) * 1999-09-13 2001-08-07 Vishay Intertechnology, Inc. Process of fabricating a chip scale surface mount package for semiconductor device
JP2001199787A (ja) * 2000-01-12 2001-07-24 Asahi Kasei Corp 起爆装置ならびに起爆方法
FR2807157B1 (fr) * 2000-04-04 2003-01-31 Vishay Sa Element resistif pour initiateur pyrotechnique
US6772692B2 (en) 2000-05-24 2004-08-10 Lifesparc, Inc. Electro-explosive device with laminate bridge
FR2809806B1 (fr) * 2000-05-30 2003-01-10 Livbag Snc Initiateur electro-pyrotechnique a pont en couche mince et a tres basse energie de fonctionnement
SG139508A1 (en) * 2001-09-10 2008-02-29 Micron Technology Inc Wafer dicing device and method
SG102639A1 (en) * 2001-10-08 2004-03-26 Micron Technology Inc Apparatus and method for packing circuits
TW504815B (en) * 2001-11-16 2002-10-01 Advanced Semiconductor Eng Packaging mold device with ESD protection
US7204425B2 (en) * 2002-03-18 2007-04-17 Precision Dynamics Corporation Enhanced identification appliance
TWI232560B (en) * 2002-04-23 2005-05-11 Sanyo Electric Co Semiconductor device and its manufacture
SG142115A1 (en) * 2002-06-14 2008-05-28 Micron Technology Inc Wafer level packaging
TWI229435B (en) 2002-06-18 2005-03-11 Sanyo Electric Co Manufacture of semiconductor device
TWI227550B (en) * 2002-10-30 2005-02-01 Sanyo Electric Co Semiconductor device manufacturing method
TWI229890B (en) * 2003-04-24 2005-03-21 Sanyo Electric Co Semiconductor device and method of manufacturing same
SG119185A1 (en) 2003-05-06 2006-02-28 Micron Technology Inc Method for packaging circuits and packaged circuits
FR2857738B1 (fr) 2003-07-17 2006-01-20 Giat Ind Sa Composant pyrotechnique et procede de fabrication et de montage d'un tel composant
JP4401181B2 (ja) 2003-08-06 2010-01-20 三洋電機株式会社 半導体装置及びその製造方法
FR2875594B1 (fr) * 2004-09-21 2007-03-16 Ncs Pyrotechnie & Tech Initiateur electro-pyrotechnique
EP1798512B1 (de) * 2004-10-04 2011-08-10 Nipponkayaku Kabushikikaisha Halbleiterbrückenschaltungsvorrichtung und diese enthaltende zündvorrichtung
JP2006138510A (ja) * 2004-11-10 2006-06-01 Nippon Kayaku Co Ltd 無起爆薬電気雷管
TWI324800B (en) * 2005-12-28 2010-05-11 Sanyo Electric Co Method for manufacturing semiconductor device
KR100745399B1 (ko) * 2006-07-14 2007-08-02 삼성전자주식회사 라디칼 산화 공정을 이용한 반도체 장치의 제조 방법
US7719096B2 (en) * 2006-08-11 2010-05-18 Vishay General Semiconductor Llc Semiconductor device and method for manufacturing a semiconductor device
JP4653718B2 (ja) * 2006-10-26 2011-03-16 日本化薬株式会社 スクイブならびにエアバッグ用ガス発生装置およびシートベルトプリテンショナー用ガス発生装置
JP4705550B2 (ja) 2006-10-26 2011-06-22 日本化薬株式会社 スクイブならびにエアバッグ用ガス発生装置およびシートベルトプリテンショナー用ガス発生装置
US8080862B2 (en) 2008-09-09 2011-12-20 Qualcomm Incorporate Systems and methods for enabling ESD protection on 3-D stacked devices
US8399995B2 (en) * 2009-01-16 2013-03-19 Infineon Technologies Ag Semiconductor device including single circuit element for soldering
US20100207227A1 (en) * 2009-02-16 2010-08-19 Georg Meyer-Berg Electronic Device and Method of Manufacturing Same
US9134100B2 (en) * 2009-04-13 2015-09-15 Ensign-Bickford Aerospace & Defense Company Surface mountable semiconductor bridge die
US20110089557A1 (en) * 2009-10-19 2011-04-21 Jeng-Jye Shau Area reduction for die-scale surface mount package chips
US9568288B2 (en) * 2014-02-05 2017-02-14 Battelle Memorial Institute Surface mount exploding foil initiator

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE556596A (de) * 1956-04-30
US3196041A (en) * 1960-11-25 1965-07-20 Gen Lab Associates Inc Method of making a semiconductor gap for an initiator
US3292537A (en) * 1965-06-15 1966-12-20 Jr Frank A Goss Multi-signal explosive detonator
US3366055A (en) * 1966-11-15 1968-01-30 Green Mansions Inc Semiconductive explosive igniter
DE2020016C3 (de) * 1970-04-24 1974-12-12 Dynamit Nobel Ag, 5210 Troisdorf Metallschichtzündmittel
US4044222A (en) * 1976-01-16 1977-08-23 Western Electric Company, Inc. Method of forming tapered apertures in thin films with an energy beam
US4381692A (en) * 1977-05-11 1983-05-03 Quantic Industries, Inc. Method of making an incendiary munition
DE2747163A1 (de) * 1977-10-20 1979-04-26 Dynamit Nobel Ag Elektrisches anzuendelement
US4405933A (en) * 1981-02-04 1983-09-20 Rca Corporation Protective integrated circuit device utilizing back-to-back zener diodes
US4559875A (en) * 1984-03-19 1985-12-24 Quantic Industries, Inc. High energy switching circuit for initiator means or the like and method therefor
IT8454108V0 (it) * 1984-12-04 1984-12-04 Riv Officine Di Villar Perosa Punteria idraulica a tenuta stagna per il comando del moto di una valvola di un motore endotermico
US4708060A (en) * 1985-02-19 1987-11-24 The United States Of America As Represented By The United States Department Of Energy Semiconductor bridge (SCB) igniter
US4700263A (en) * 1985-10-01 1987-10-13 Quantic Industries, Inc. Safe-arm system with electrical charge transfer circuit
US4649821A (en) * 1986-01-03 1987-03-17 Quantic Industries, Inc. Electrical circuit continuity test apparatus for firing unit
US4729315A (en) * 1986-12-17 1988-03-08 Quantic Industries, Inc. Thin film bridge initiator and method therefor
US4843964A (en) * 1988-02-01 1989-07-04 The United States Of America As Represented By The United States Department Of Energy Smart explosive igniter
US4976200A (en) * 1988-12-30 1990-12-11 The United States Of America As Represented By The United States Department Of Energy Tungsten bridge for the low energy ignition of explosive and energetic materials
US4978639A (en) * 1989-01-10 1990-12-18 Avantek, Inc. Method for the simultaneous formation of via-holes and wraparound plating on semiconductor chips
US4934804A (en) * 1989-01-13 1990-06-19 Whittaker Ordnance, Inc. Focusing optical explosive initiator and initiator window
US4930418A (en) * 1989-06-23 1990-06-05 Whittaker Ordnance, Inc. Method for sealing optical windows in explosive initiators
US5029529A (en) * 1989-09-25 1991-07-09 Olin Corporation Semiconductor bridge (SCB) packaging system
US5113764A (en) * 1989-09-25 1992-05-19 Olin Corporation Semiconductor bridge (SCB) packaging system
US5010822A (en) * 1990-02-02 1991-04-30 Whittaker Ordnance, Inc. Explosive initiator with angled fiber optic input
US5036767A (en) * 1990-07-02 1991-08-06 Whittaker Ordnance, Inc. Optical window for laser-initiated explosive devices
US5148265A (en) * 1990-09-24 1992-09-15 Ist Associates, Inc. Semiconductor chip assemblies with fan-in leads
US5080016A (en) * 1991-03-20 1992-01-14 The United States Of America As Represented By The Department Of Energy Hydrogen loaded metal for bridge-foils for enhanced electric gun/slapper detonator operation
US5206455A (en) * 1991-03-28 1993-04-27 Quantic Industries, Inc. Laser initiated ordnance systems
US5230287A (en) * 1991-04-16 1993-07-27 Thiokol Corporation Low cost hermetically sealed squib
DE4229624C2 (de) * 1991-09-05 2000-12-07 Trw Inc Aufblasvorrichtung für eine Fahrzeuginsassen-Rückhaltevorrichtung
US5255277A (en) * 1991-09-30 1993-10-19 Whittaker Ordnance, Inc. Electronic pulse width controller for flashlamp pumped lasers
US5179248A (en) * 1991-10-08 1993-01-12 Scb Technologies, Inc. Zener diode for protection of semiconductor explosive bridge
US5309841A (en) * 1991-10-08 1994-05-10 Scb Technologies, Inc. Zener diode for protection of integrated circuit explosive bridge
US5334306A (en) * 1991-12-11 1994-08-02 At&T Bell Laboratories Metallized paths on diamond surfaces
US5173958A (en) * 1992-01-17 1992-12-22 Whittaker Ordnance, Inc. Beam distributor for laser-to-optical fiber application
US5285727A (en) * 1992-04-02 1994-02-15 The United States Of America As Represented By The Secretary Of The Army Semiconductor ignitor
US5327834A (en) * 1992-05-28 1994-07-12 Thiokol Corporation Integrated field-effect initiator
US5359192A (en) * 1992-06-10 1994-10-25 Quantic Industries Inc. Dual-wavelength low-power built-in-test for a laser-initiated ordnance system
US5243492A (en) * 1992-08-27 1993-09-07 Coors Ceramics Company Process for fabricating a hermetic coaxial feedthrough
US5454320A (en) * 1992-10-23 1995-10-03 Quantic Industries, Inc. Air bag initiator
US5294567A (en) * 1993-01-08 1994-03-15 E. I. Du Pont De Nemours And Company Method for forming via holes in multilayer circuits
JP3484517B2 (ja) * 1993-02-26 2004-01-06 エヌ・ケイ・エヌ・エム・リミテッド 改良された半導体ブリッジ起爆装置
JP3152834B2 (ja) * 1993-06-24 2001-04-03 株式会社東芝 電子回路装置
US5385097A (en) * 1993-07-16 1995-01-31 At&T Corp. Electroexplosive device
US5473623A (en) * 1993-12-17 1995-12-05 Quantic Industries, Inc. Laser diode driver circuit
US5500546A (en) * 1994-09-16 1996-03-19 Texas Instruments Incorporated ESD protection circuits using Zener diodes

Also Published As

Publication number Publication date
EP0948812A1 (de) 1999-10-13
EP0948812B1 (de) 2005-03-02
AU717944B2 (en) 2000-04-06
AU5376498A (en) 1998-07-17
JP4326027B2 (ja) 2009-09-02
JP2001508941A (ja) 2001-07-03
DE69732650T2 (de) 2005-07-21
BR9714516A (pt) 2001-11-20
US6054760A (en) 2000-04-25
NO993048D0 (no) 1999-06-21
CA2274167A1 (en) 1998-07-02
EP0948812A4 (de) 2000-11-15
WO1998028792A1 (en) 1998-07-02
NO993048L (no) 1999-08-23

Similar Documents

Publication Publication Date Title
DE69732650D1 (de) Halbleiter brückenelement mit oberflächenverbindung, vorrichtungen und verfahren
KR960009110A (ko) 반도체 장치 및 그 제조방법
DE69721411D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69737588D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69534700D1 (de) Halbleiteranordnungen und verfahren
DE69838597D1 (de) Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
KR960009107A (ko) 반도체장치와 그 제조방법
KR960012575A (ko) 반도체 장치 제조 방법
DE69842052D1 (de) Gan einkristall-substrat und herstellungsmethode
ID29013A (id) Ligan-ligan reseptor novel thiroid dan metode ii
DE69814710D1 (de) Beschichtungs-Vorrichtung und Verfahren
DE69810485D1 (de) Kommunikationssysteme und verfahren mit paralleler verschachtelungsloser kodierung
KR960015900A (ko) 반도체 장치 및 그 제조방법
DE69633775D1 (de) Halbleiterbauteil, Verbindungsmethode und Halbleiterbauteil-Verbinder
DE69413602D1 (de) Halbleiteranordnung und Herstellungsverfahren
ID16570A (id) Pembuatan amina-amina dan aminonitril-aminonitril
DE69424728D1 (de) Halbleiteranordnung und zugehörige Herstellungsmethode
KR960012574A (ko) 반도체장치 제조방법
DE69738012D1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
DE69637537D1 (de) Halbleiteranordnung mit verbessertem Verbindungsmuster und Herstellungsverfahren dafür
KR970004015A (ko) 반도체장치 및 그의 제조방법
DE69712234T2 (de) Kodierungsverfahren und -gerät
KR960012313A (ko) 반도체 장치 및 그 제조방법
DE69839635D1 (de) s und ein mit diesem Verfahren behandelter Siliziumwafer
DE69816818D1 (de) Mehrheitsentscheidungsvorrichtung und entsprechendes verfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ENSIGN-BICKFORD AEROSPACE & DEFENSE COMPANY, S, US

8339 Ceased/non-payment of the annual fee