DE69730246D1 - Verfahren zur herstellung von diamantschichten mittels gasphasensynthese - Google Patents

Verfahren zur herstellung von diamantschichten mittels gasphasensynthese

Info

Publication number
DE69730246D1
DE69730246D1 DE69730246T DE69730246T DE69730246D1 DE 69730246 D1 DE69730246 D1 DE 69730246D1 DE 69730246 T DE69730246 T DE 69730246T DE 69730246 T DE69730246 T DE 69730246T DE 69730246 D1 DE69730246 D1 DE 69730246D1
Authority
DE
Germany
Prior art keywords
gas phase
phase synthesis
diamond layers
producing diamond
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69730246T
Other languages
English (en)
Other versions
DE69730246T2 (de
Inventor
Alexandr Tursunovich Rakhimov
Mikhail Arkadievich Timofeev
Nikolaiy Vladislavovich Suetin
Valentin Akimovich Tugarev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OOO VYSOKIE T MOSKAU MOSKVA
Original Assignee
OOO VYSOKIE T MOSKAU MOSKVA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OOO VYSOKIE T MOSKAU MOSKVA filed Critical OOO VYSOKIE T MOSKAU MOSKVA
Publication of DE69730246D1 publication Critical patent/DE69730246D1/de
Application granted granted Critical
Publication of DE69730246T2 publication Critical patent/DE69730246T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69730246T 1997-04-16 1997-04-16 Verfahren zur herstellung von diamantschichten mittels gasphasensynthese Expired - Fee Related DE69730246T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU1997/000115 WO1998046812A1 (fr) 1997-04-16 1997-04-16 Procede de production de pellicules de diamant selon la methode de synthese en phase vapeur

Publications (2)

Publication Number Publication Date
DE69730246D1 true DE69730246D1 (de) 2004-09-16
DE69730246T2 DE69730246T2 (de) 2005-08-04

Family

ID=20130108

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69730246T Expired - Fee Related DE69730246T2 (de) 1997-04-16 1997-04-16 Verfahren zur herstellung von diamantschichten mittels gasphasensynthese

Country Status (5)

Country Link
EP (1) EP0989211B1 (de)
JP (1) JP2002501469A (de)
AU (1) AU2716797A (de)
DE (1) DE69730246T2 (de)
WO (1) WO1998046812A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004012044A1 (de) * 2004-03-11 2005-09-29 Infineon Technologies Ag Verfahren zum Herstellen einer im Wesentlichen aus Kohlenstoff bestehenden Schicht, eine Sondeneinheit, ein Verfahren zum Herstellen einer Sondeneinheit und ein Rasterkraftmikroskop mit einer Sondeneinheit
JP6112485B2 (ja) 2013-09-19 2017-04-12 国立研究開発法人産業技術総合研究所 単結晶ダイヤモンドの製造方法
JP6394641B2 (ja) * 2016-04-25 2018-09-26 トヨタ自動車株式会社 プラズマ装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU411037A1 (ru) * 1971-10-28 1974-08-05 В. М. Гол ЯНОВ , А. П. Демидов Способ получения искусственных алмазов
DE3690606C2 (de) * 1985-11-25 1995-09-21 Yoichi Hirose Verfahren zur Synthese von Diamant
JP2597497B2 (ja) * 1988-01-14 1997-04-09 洋一 広瀬 気相法ダイヤモンドの合成法
JPH02248397A (ja) * 1989-03-20 1990-10-04 Onoda Cement Co Ltd ダイヤモンドの製造装置および製造方法
DE3927136A1 (de) * 1989-08-17 1991-02-21 Philips Patentverwaltung Verfahren zur herstellung polykristalliner diamantschichten
US5174983A (en) * 1990-09-24 1992-12-29 The United States Of America, As Represented By The Secretary Of The Navy Flame or plasma synthesis of diamond under turbulent and transition flow conditions
JP3774904B2 (ja) * 1994-01-27 2006-05-17 住友電気工業株式会社 平坦なダイヤモンド膜の合成法とダイヤモンド自立膜及びダイヤモンド膜の研磨方法

Also Published As

Publication number Publication date
WO1998046812A1 (fr) 1998-10-22
EP0989211A4 (de) 2000-07-05
EP0989211B1 (de) 2004-08-11
DE69730246T2 (de) 2005-08-04
JP2002501469A (ja) 2002-01-15
EP0989211A1 (de) 2000-03-29
AU2716797A (en) 1998-11-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee