DE69725770D1 - Chemischer Halbleitersensor - Google Patents

Chemischer Halbleitersensor

Info

Publication number
DE69725770D1
DE69725770D1 DE69725770T DE69725770T DE69725770D1 DE 69725770 D1 DE69725770 D1 DE 69725770D1 DE 69725770 T DE69725770 T DE 69725770T DE 69725770 T DE69725770 T DE 69725770T DE 69725770 D1 DE69725770 D1 DE 69725770D1
Authority
DE
Germany
Prior art keywords
semiconductor sensor
chemical semiconductor
chemical
sensor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69725770T
Other languages
English (en)
Other versions
DE69725770T2 (de
Inventor
Lionel Lescouzeres
Alain Seube
Anne-Marie Gue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Publication of DE69725770D1 publication Critical patent/DE69725770D1/de
Application granted granted Critical
Publication of DE69725770T2 publication Critical patent/DE69725770T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Recrystallisation Techniques (AREA)
  • Pressure Sensors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
DE69725770T 1996-03-14 1997-02-19 Chemischer Halbleitersensor Expired - Lifetime DE69725770T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9603216A FR2746183B1 (fr) 1996-03-14 1996-03-14 Dispositif capteur chimique a semiconducteur et procede de formation d'un dispositif capteur chimique a semiconducteur
FR9603216 1996-03-14

Publications (2)

Publication Number Publication Date
DE69725770D1 true DE69725770D1 (de) 2003-12-04
DE69725770T2 DE69725770T2 (de) 2004-05-13

Family

ID=9490185

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69725770T Expired - Lifetime DE69725770T2 (de) 1996-03-14 1997-02-19 Chemischer Halbleitersensor

Country Status (7)

Country Link
US (1) US5786608A (de)
EP (1) EP0795747B1 (de)
JP (1) JP3949771B2 (de)
KR (1) KR970067765A (de)
DE (1) DE69725770T2 (de)
FR (1) FR2746183B1 (de)
TW (1) TW359888B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3553613B2 (ja) * 1996-10-10 2004-08-11 サムソン・エレクトロニクス・カンパニー・リミテッド ガスセンサのハイブリッド集積回路
DE69731604D1 (de) 1997-01-31 2004-12-23 St Microelectronics Srl Herstellungsverfahren für integrierte Halbleitervorrichtung mit einem chemoresistiven Gasmikrosensor
FR2765967B1 (fr) * 1997-07-11 1999-08-20 Commissariat Energie Atomique Dispositif d'analyse a puce comprenant des electrodes a chauffage localise
EP0947245B1 (de) 1998-02-05 2004-04-07 Motorola Semiconducteurs S.A. Verfahren zur Herstellung von Metallenthaltenden Kolloidalen und Verfahren zur Herstellung von Metalloxyden enthaltenden empfindlichen Schichten für chemisches Sensorgerät
US6387724B1 (en) * 1999-02-26 2002-05-14 Dynamics Research Corporation Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface
DE10011562C2 (de) * 2000-03-09 2003-05-22 Daimler Chrysler Ag Gassensor
DE10119405A1 (de) * 2001-04-20 2002-10-24 Bosch Gmbh Robert Gassensor und Verfahren zu dessen Herstellung
EP1273908B1 (de) * 2001-07-05 2004-04-07 Microchemical Systems S.A. Chemischer Gassensor
KR100529233B1 (ko) * 2003-09-06 2006-02-24 한국전자통신연구원 센서 및 그 제조 방법
DE102004017750B4 (de) * 2004-04-06 2006-03-16 Flechsig, Gerd-Uwe, Dr. rer. nat. Analyse-Array mit heizbaren Elektroden
DE102006006347B3 (de) 2006-02-07 2007-08-23 Universität Rostock Sensorvorrichtung für ein elektrochemisches Messgerät und Verfahren zur Durchführung elektrochemischer Messungen
US7759957B2 (en) * 2007-07-27 2010-07-20 United Microelectronics Corp. Method for fabricating a test structure
US9863901B2 (en) 2013-12-06 2018-01-09 Robert Bosch Gmbh Semiconductor sensor having a suspended structure and method of forming a semiconductor sensor having a suspended structure
WO2017205146A1 (en) * 2016-05-27 2017-11-30 Carrier Corporation Gas detection device and method of manufacturing the same
US10094802B2 (en) 2016-06-01 2018-10-09 EXIAS Medical GmbH Heating system for a measurement cell
TWI679782B (zh) * 2017-12-19 2019-12-11 財團法人工業技術研究院 感測裝置及其製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5618750A (en) * 1979-07-25 1981-02-21 Ricoh Co Ltd Gas detector
CA1216330A (en) * 1983-02-07 1987-01-06 Junji Manaka Low power gas detector
US4967589A (en) * 1987-12-23 1990-11-06 Ricoh Company, Ltd. Gas detecting device
FI82774C (fi) * 1988-06-08 1991-04-10 Vaisala Oy Integrerad uppvaermbar sensor.
DE3941837C2 (de) * 1989-12-19 1994-01-13 Bosch Gmbh Robert Widerstandsmeßfühler zur Erfassung des Sauerstoffgehaltes in Gasgemischen und Verfahren zu seiner Herstellung
US5250170A (en) * 1990-03-15 1993-10-05 Ricoh Company, Ltd. Gas sensor having metal-oxide semiconductor layer
JPH04212048A (ja) * 1990-06-11 1992-08-03 Ricoh Co Ltd ガスセンサ
US5345213A (en) * 1992-10-26 1994-09-06 The United States Of America, As Represented By The Secretary Of Commerce Temperature-controlled, micromachined arrays for chemical sensor fabrication and operation
JP3452409B2 (ja) * 1994-08-10 2003-09-29 株式会社リコー マイクロブリッジヒータ

Also Published As

Publication number Publication date
JPH10260150A (ja) 1998-09-29
EP0795747A1 (de) 1997-09-17
JP3949771B2 (ja) 2007-07-25
DE69725770T2 (de) 2004-05-13
FR2746183B1 (fr) 1998-06-05
TW359888B (en) 1999-06-01
US5786608A (en) 1998-07-28
KR970067765A (ko) 1997-10-13
EP0795747B1 (de) 2003-10-29
FR2746183A1 (fr) 1997-09-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US