DE69724859D1 - Verfahren zur Herstellung von Kontakten auf einem Halbleiterbauelement - Google Patents

Verfahren zur Herstellung von Kontakten auf einem Halbleiterbauelement

Info

Publication number
DE69724859D1
DE69724859D1 DE69724859T DE69724859T DE69724859D1 DE 69724859 D1 DE69724859 D1 DE 69724859D1 DE 69724859 T DE69724859 T DE 69724859T DE 69724859 T DE69724859 T DE 69724859T DE 69724859 D1 DE69724859 D1 DE 69724859D1
Authority
DE
Germany
Prior art keywords
semiconductor device
making contacts
contacts
making
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69724859T
Other languages
English (en)
Other versions
DE69724859T2 (de
Inventor
Akira Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69724859D1 publication Critical patent/DE69724859D1/de
Publication of DE69724859T2 publication Critical patent/DE69724859T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H01L29/41783—Raised source or drain electrodes self aligned with the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69724859T 1996-03-22 1997-03-24 Verfahren zur Herstellung von Kontakten auf einem Halbleiterbauelement Expired - Lifetime DE69724859T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6675396 1996-03-22
JP06675396A JP3215320B2 (ja) 1996-03-22 1996-03-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69724859D1 true DE69724859D1 (de) 2003-10-23
DE69724859T2 DE69724859T2 (de) 2004-07-08

Family

ID=13324970

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69724859T Expired - Lifetime DE69724859T2 (de) 1996-03-22 1997-03-24 Verfahren zur Herstellung von Kontakten auf einem Halbleiterbauelement

Country Status (5)

Country Link
US (1) US5863837A (de)
EP (1) EP0797250B1 (de)
JP (1) JP3215320B2 (de)
KR (1) KR100222185B1 (de)
DE (1) DE69724859T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6124189A (en) * 1997-03-14 2000-09-26 Kabushiki Kaisha Toshiba Metallization structure and method for a semiconductor device
US6080672A (en) 1997-08-20 2000-06-27 Micron Technology, Inc. Self-aligned contact formation for semiconductor devices
US6165910A (en) * 1997-12-29 2000-12-26 Lam Research Corporation Self-aligned contacts for semiconductor device
KR100276387B1 (ko) * 1998-01-08 2000-12-15 윤종용 반도체 장치의 자기정렬 콘택 형성 방법
KR100284535B1 (ko) * 1998-06-17 2001-04-02 윤종용 반도체장치의자기정렬콘택형성방법
KR100268443B1 (ko) * 1998-08-29 2000-10-16 윤종용 반도체 장치의 자기 정렬 콘택 형성 방법
US6124172A (en) * 1998-09-30 2000-09-26 Advanced Micro Devices, Inc. Method of making a semiconductor device having source/drain structures with self-aligned heavily-doped and lightly-doped regions
KR100345069B1 (ko) * 1999-06-30 2002-07-19 주식회사 하이닉스반도체 반도체 소자의 폴리실리콘 플러그 형성방법
US6445050B1 (en) 2000-02-08 2002-09-03 International Business Machines Corporation Symmetric device with contacts self aligned to gate
DE10332600B3 (de) * 2003-07-17 2005-04-14 Infineon Technologies Ag Verfahren zum Herstellen eines elektrisch leitenden Kontaktes
US8367509B1 (en) * 2011-09-21 2013-02-05 Nanya Technology Corporation Self-aligned method for forming contact of device with reduced step height
US9748356B2 (en) 2012-09-25 2017-08-29 Stmicroelectronics, Inc. Threshold adjustment for quantum dot array devices with metal source and drain
US9601630B2 (en) * 2012-09-25 2017-03-21 Stmicroelectronics, Inc. Transistors incorporating metal quantum dots into doped source and drain regions
US10002938B2 (en) 2013-08-20 2018-06-19 Stmicroelectronics, Inc. Atomic layer deposition of selected molecular clusters

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4221045A (en) * 1978-06-06 1980-09-09 Rockwell International Corporation Self-aligned contacts in an ion implanted VLSI circuit
US4822754A (en) * 1983-05-27 1989-04-18 American Telephone And Telegraph Company, At&T Bell Laboratories Fabrication of FETs with source and drain contacts aligned with the gate electrode
US4737828A (en) * 1986-03-17 1988-04-12 General Electric Company Method for gate electrode fabrication and symmetrical and non-symmetrical self-aligned inlay transistors made therefrom
EP0422824A1 (de) * 1989-10-12 1991-04-17 AT&T Corp. Feldeffekttransistor mit Fenster aus Polysilizium
DE69034137D1 (de) * 1990-10-01 2004-06-03 St Microelectronics Srl Herstellung von Kontaktanschlüssen bei der alles überdeckenden CVD-Abscheidung und Rückätzen
KR970007830B1 (ko) * 1993-12-21 1997-05-17 현대전자산업 주식회사 반도체 장치 및 그 제조방법

Also Published As

Publication number Publication date
EP0797250A3 (de) 1999-05-06
DE69724859T2 (de) 2004-07-08
EP0797250B1 (de) 2003-09-17
KR100222185B1 (ko) 1999-10-01
JP3215320B2 (ja) 2001-10-02
JPH09260655A (ja) 1997-10-03
US5863837A (en) 1999-01-26
EP0797250A2 (de) 1997-09-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition