DE69714486T2 - Detektorschaltung für Substrat-Potential - Google Patents

Detektorschaltung für Substrat-Potential

Info

Publication number
DE69714486T2
DE69714486T2 DE69714486T DE69714486T DE69714486T2 DE 69714486 T2 DE69714486 T2 DE 69714486T2 DE 69714486 T DE69714486 T DE 69714486T DE 69714486 T DE69714486 T DE 69714486T DE 69714486 T2 DE69714486 T2 DE 69714486T2
Authority
DE
Germany
Prior art keywords
detector circuit
substrate potential
potential
substrate
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69714486T
Other languages
English (en)
Other versions
DE69714486D1 (de
Inventor
Tadahiro Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69714486D1 publication Critical patent/DE69714486D1/de
Publication of DE69714486T2 publication Critical patent/DE69714486T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0222—Charge pumping, substrate bias generation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
DE69714486T 1996-01-26 1997-01-24 Detektorschaltung für Substrat-Potential Expired - Lifetime DE69714486T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8011529A JPH09205153A (ja) 1996-01-26 1996-01-26 基板電位検出回路

Publications (2)

Publication Number Publication Date
DE69714486D1 DE69714486D1 (de) 2002-09-12
DE69714486T2 true DE69714486T2 (de) 2003-05-08

Family

ID=11780505

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69714486T Expired - Lifetime DE69714486T2 (de) 1996-01-26 1997-01-24 Detektorschaltung für Substrat-Potential

Country Status (5)

Country Link
US (1) US5936436A (de)
EP (1) EP0786810B1 (de)
JP (1) JPH09205153A (de)
KR (1) KR100261955B1 (de)
DE (1) DE69714486T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111176361A (zh) * 2020-01-09 2020-05-19 电子科技大学 一种基于衬底偏置调控的亚阈值带隙基准电压源

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064250A (en) * 1996-07-29 2000-05-16 Townsend And Townsend And Crew Llp Various embodiments for a low power adaptive charge pump circuit
DE10014385B4 (de) * 2000-03-23 2005-12-15 Infineon Technologies Ag CMOS-Spannungsteiler
JP2002033399A (ja) 2000-07-13 2002-01-31 Toshiba Corp 半導体集積回路及びその製造方法
JP4744202B2 (ja) * 2005-06-22 2011-08-10 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US20070068337A1 (en) * 2005-09-06 2007-03-29 Matthew Mincer Ergonomic, adjustable handle for microtomes and cryostats
JP5225013B2 (ja) * 2008-10-15 2013-07-03 株式会社東芝 電位検知回路及びｂｇｒ電位検知回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821856A (ja) * 1981-07-31 1983-02-08 Nec Corp 半導体装置
JPS61196617A (ja) * 1985-02-25 1986-08-30 Sharp Corp Ｍｏｓ論理回路
US4874967A (en) * 1987-12-15 1989-10-17 Xicor, Inc. Low power voltage clamp circuit
KR0133933B1 (ko) * 1988-11-09 1998-04-25 고스기 노부미쓰 기판바이어스 발생회로
KR910004737B1 (ko) * 1988-12-19 1991-07-10 삼성전자 주식회사 백바이어스전압 발생회로
JPH0783254B2 (ja) * 1989-03-22 1995-09-06 株式会社東芝 半導体集積回路
KR930001236A (ko) * 1991-06-17 1993-01-16 김광호 전원전압 변동에 둔감한 특성을 갖는 기판 전압 레벨 감지회로
KR0137857B1 (ko) * 1992-06-02 1998-06-01 사또오 후미오 반도체 장치
US5302861A (en) * 1992-11-25 1994-04-12 National Semiconductor Corporation Power on reset circuit with sharply sloped voltage transfer function

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111176361A (zh) * 2020-01-09 2020-05-19 电子科技大学 一种基于衬底偏置调控的亚阈值带隙基准电压源
CN111176361B (zh) * 2020-01-09 2021-03-26 电子科技大学 一种基于衬底偏置调控的亚阈值带隙基准电压源

Also Published As

Publication number Publication date
KR970060422A (ko) 1997-08-12
US5936436A (en) 1999-08-10
KR100261955B1 (ko) 2000-07-15
DE69714486D1 (de) 2002-09-12
JPH09205153A (ja) 1997-08-05
EP0786810A1 (de) 1997-07-30
EP0786810B1 (de) 2002-08-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition