DE69707828D1 - Herstellungsverfahren für einen isolierenden Film mit eingestellter Spannung, Hableitervorrichtung und Herstellungsverfahren - Google Patents
Herstellungsverfahren für einen isolierenden Film mit eingestellter Spannung, Hableitervorrichtung und HerstellungsverfahrenInfo
- Publication number
- DE69707828D1 DE69707828D1 DE69707828T DE69707828T DE69707828D1 DE 69707828 D1 DE69707828 D1 DE 69707828D1 DE 69707828 T DE69707828 T DE 69707828T DE 69707828 T DE69707828 T DE 69707828T DE 69707828 D1 DE69707828 D1 DE 69707828D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- insulating film
- adjusted voltage
- voltage insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Local Oxidation Of Silicon (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34635196A JP3226816B2 (ja) | 1996-12-25 | 1996-12-25 | 層間絶縁膜の形成方法、半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69707828D1 true DE69707828D1 (de) | 2001-12-06 |
DE69707828T2 DE69707828T2 (de) | 2002-06-20 |
Family
ID=18382827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69707828T Expired - Fee Related DE69707828T2 (de) | 1996-12-25 | 1997-07-24 | Herstellungsverfahren für einen isolierenden Film mit eingestellter Spannung, Hableitervorrichtung und Herstellungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US20010023125A1 (de) |
EP (1) | EP0851480B1 (de) |
JP (1) | JP3226816B2 (de) |
KR (1) | KR100287930B1 (de) |
DE (1) | DE69707828T2 (de) |
TW (1) | TW356571B (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990081277A (ko) * | 1998-04-28 | 1999-11-15 | 윤종용 | 절연막의 응력 제어 방법 |
US6184157B1 (en) * | 1998-06-01 | 2001-02-06 | Sharp Laboratories Of America, Inc. | Stress-loaded film and method for same |
KR20000073343A (ko) * | 1999-05-10 | 2000-12-05 | 김영환 | 반도체 장치의 배선구조 |
US6534870B1 (en) | 1999-06-15 | 2003-03-18 | Kabushiki Kaisha Toshiba | Apparatus and method for manufacturing a semiconductor device |
GB2358285A (en) * | 1999-08-30 | 2001-07-18 | Lucent Technologies Inc | Interlevel dielectrics |
JP3348084B2 (ja) | 1999-12-28 | 2002-11-20 | キヤノン販売株式会社 | 成膜方法及び半導体装置 |
US6420276B2 (en) * | 2000-07-21 | 2002-07-16 | Canon Sales Co., Inc. | Semiconductor device and semiconductor device manufacturing method |
US6500752B2 (en) * | 2000-07-21 | 2002-12-31 | Canon Sales Co., Inc. | Semiconductor device and semiconductor device manufacturing method |
US6835669B2 (en) | 2000-07-21 | 2004-12-28 | Canon Sales Co., Inc. | Film forming method, semiconductor device and semiconductor device manufacturing method |
JP2003100738A (ja) | 2001-09-25 | 2003-04-04 | Jsr Corp | 積層体、積層体の形成方法、絶縁膜ならびに半導体用基板 |
KR100448714B1 (ko) * | 2002-04-24 | 2004-09-13 | 삼성전자주식회사 | 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법 |
DE102004031744A1 (de) * | 2004-06-30 | 2006-07-27 | Advanced Micro Devices, Inc., Sunnyvale | Eine Technik zur Herstellung einer dielektrischen Zwischenschicht über einer Struktur mit eng beabstandeten Leitungen |
US7638859B2 (en) | 2005-06-06 | 2009-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnects with harmonized stress and methods for fabricating the same |
JP2007005627A (ja) * | 2005-06-24 | 2007-01-11 | Sony Corp | 半導体装置の製造方法 |
US7563704B2 (en) * | 2005-09-19 | 2009-07-21 | International Business Machines Corporation | Method of forming an interconnect including a dielectric cap having a tensile stress |
US7858532B2 (en) * | 2007-08-06 | 2010-12-28 | United Microelectronics Corp. | Dielectric layer structure and manufacturing method thereof |
JP2009253275A (ja) * | 2008-04-03 | 2009-10-29 | Xi Max Co Ltd | セラミック印刷回路基板の原板及び原板の製造方法 |
EP2341531A4 (de) * | 2008-09-26 | 2012-05-16 | Rohm Co Ltd | Halbleiterbauelement und halbleiterbauelement-herstellungsverfahren |
DE102008054069B4 (de) * | 2008-10-31 | 2016-11-10 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Reduzierte Scheibendurchbiegung in Halbleitern durch Verspannungstechniken im Metallisierungssystem |
US20120015113A1 (en) * | 2010-07-13 | 2012-01-19 | Applied Materials, Inc. | Methods for forming low stress dielectric films |
CN102446839A (zh) * | 2011-10-21 | 2012-05-09 | 上海华力微电子有限公司 | 一种前金属介电质层的淀积方法 |
CN104167385B (zh) * | 2013-05-16 | 2017-03-15 | 中芯国际集成电路制造(上海)有限公司 | 改善互连工艺中半导体器件可靠性的方法 |
GB201410317D0 (en) * | 2014-06-10 | 2014-07-23 | Spts Technologies Ltd | Substrate |
JP6589277B2 (ja) | 2015-01-14 | 2019-10-16 | 富士電機株式会社 | 高耐圧受動素子および高耐圧受動素子の製造方法 |
JP6919137B2 (ja) * | 2017-05-11 | 2021-08-18 | 新日本無線株式会社 | 半導体装置の製造方法 |
JP7005367B2 (ja) * | 2018-02-05 | 2022-02-04 | 東京エレクトロン株式会社 | ボロン系膜の成膜方法および成膜装置 |
CN108376652B (zh) * | 2018-03-05 | 2019-08-30 | 长江存储科技有限责任公司 | 晶圆键合方法、晶圆键合结构及调整晶圆变形量的方法 |
KR102271158B1 (ko) | 2020-12-22 | 2021-06-29 | 조아라 | 세라믹 롤러 |
US11973021B2 (en) * | 2021-09-17 | 2024-04-30 | Vanguard International Semiconductor Corporation | Semiconductor device and method forming the same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4764475A (en) * | 1986-12-01 | 1988-08-16 | The University Of British Columbia | Pancreas dependant immunoassay for determining subpopulations of monoclonal antibodies to somatostatin. |
JPH084109B2 (ja) * | 1987-08-18 | 1996-01-17 | 富士通株式会社 | 半導体装置およびその製造方法 |
US5098865A (en) * | 1989-11-02 | 1992-03-24 | Machado Jose R | High step coverage silicon oxide thin films |
JPH03151637A (ja) * | 1989-11-09 | 1991-06-27 | Kowa Kurieitaa:Kk | 半導体装置の製造方法及びプラズマcvd装置 |
CA2006174A1 (en) * | 1989-12-20 | 1991-06-20 | Luc Ouellet | Method of making crack-free insulating films with sog interlayer |
US5250468A (en) * | 1990-02-05 | 1993-10-05 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device including interlaying insulating film |
JPH0719777B2 (ja) * | 1990-08-10 | 1995-03-06 | 株式会社半導体プロセス研究所 | 半導体装置の製造方法 |
JP3332467B2 (ja) * | 1993-04-06 | 2002-10-07 | 三洋電機株式会社 | 多結晶半導体の製造方法 |
US5500312A (en) * | 1994-10-11 | 1996-03-19 | At&T Corp. | Masks with low stress multilayer films and a process for controlling the stress of multilayer films |
-
1996
- 1996-12-25 JP JP34635196A patent/JP3226816B2/ja not_active Expired - Fee Related
-
1997
- 1997-07-21 US US08/897,839 patent/US20010023125A1/en not_active Abandoned
- 1997-07-22 TW TW086110442A patent/TW356571B/zh active
- 1997-07-24 EP EP97112763A patent/EP0851480B1/de not_active Expired - Lifetime
- 1997-07-24 DE DE69707828T patent/DE69707828T2/de not_active Expired - Fee Related
- 1997-07-31 KR KR1019970036312A patent/KR100287930B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0851480A2 (de) | 1998-07-01 |
JP3226816B2 (ja) | 2001-11-05 |
JPH10189577A (ja) | 1998-07-21 |
EP0851480A3 (de) | 1998-07-29 |
TW356571B (en) | 1999-04-21 |
EP0851480B1 (de) | 2001-10-31 |
US20010023125A1 (en) | 2001-09-20 |
KR100287930B1 (ko) | 2001-06-01 |
KR19980063389A (ko) | 1998-10-07 |
DE69707828T2 (de) | 2002-06-20 |
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