DE69706468T2 - Diodenlaservorrichtung - Google Patents

Diodenlaservorrichtung

Info

Publication number
DE69706468T2
DE69706468T2 DE69706468T DE69706468T DE69706468T2 DE 69706468 T2 DE69706468 T2 DE 69706468T2 DE 69706468 T DE69706468 T DE 69706468T DE 69706468 T DE69706468 T DE 69706468T DE 69706468 T2 DE69706468 T2 DE 69706468T2
Authority
DE
Germany
Prior art keywords
laser device
diode laser
diode
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69706468T
Other languages
English (en)
Other versions
DE69706468D1 (de
Inventor
Victor Victorovich Apollonov
Gennadiy Ivanovich Babayants
Sergey Igorevich Derjavin
Batory Shakhimovich Kishmakhov
Yury Petrovich Koval
Vitaliy Vladimirovich Kuzminov
Dmitry Alecsandrovi Mashkovsky
Alexandr Mikhaylovic Prokhorov
Victor Pavlovich Smekalin
Jean Cornillault
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Industriel des Lasers CILAS SA
Original Assignee
Compagnie Industriel des Lasers CILAS SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Industriel des Lasers CILAS SA filed Critical Compagnie Industriel des Lasers CILAS SA
Application granted granted Critical
Publication of DE69706468D1 publication Critical patent/DE69706468D1/de
Publication of DE69706468T2 publication Critical patent/DE69706468T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4037—Edge-emitting structures with active layers in more than one orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE69706468T 1996-04-23 1997-04-17 Diodenlaservorrichtung Expired - Lifetime DE69706468T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU96108180A RU2130221C1 (ru) 1996-04-23 1996-04-23 Матрица лазерных диодов

Publications (2)

Publication Number Publication Date
DE69706468D1 DE69706468D1 (de) 2001-10-11
DE69706468T2 true DE69706468T2 (de) 2002-05-16

Family

ID=20179823

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69706468T Expired - Lifetime DE69706468T2 (de) 1996-04-23 1997-04-17 Diodenlaservorrichtung

Country Status (5)

Country Link
US (1) US5930279A (de)
EP (1) EP0803949B1 (de)
JP (1) JP3828237B2 (de)
DE (1) DE69706468T2 (de)
RU (1) RU2130221C1 (de)

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US6295307B1 (en) * 1997-10-14 2001-09-25 Decade Products, Inc. Laser diode assembly
US6266353B1 (en) * 1999-07-30 2001-07-24 The Regents Of The University Of California Monolithic laser diode array with one metalized sidewall
US6647035B1 (en) * 2000-10-17 2003-11-11 The Regents Of The University Of California Ruggedized microchannel-cooled laser diode array with self-aligned microlens
LT5257B (lt) 2003-12-19 2005-08-25 Uždaroji akcinė bendrovė MGF "Šviesos konversija" Ryškį išsaugojantis lazerinių pluoštų formuotuvas
US8134163B2 (en) 2008-08-11 2012-03-13 Taiwan Semiconductor Manfacturing Co., Ltd. Light-emitting diodes on concave texture substrate
US9293656B2 (en) * 2012-11-02 2016-03-22 Epistar Corporation Light emitting device
US8716723B2 (en) 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
US8995493B2 (en) 2009-02-17 2015-03-31 Trilumina Corp. Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
US20130223846A1 (en) 2009-02-17 2013-08-29 Trilumina Corporation High speed free-space optical communications
US10038304B2 (en) 2009-02-17 2018-07-31 Trilumina Corp. Laser arrays for variable optical properties
US8613536B2 (en) * 2009-12-19 2013-12-24 Trilumina Corporation System and method for combining laser arrays for digital outputs
US10244181B2 (en) 2009-02-17 2019-03-26 Trilumina Corp. Compact multi-zone infrared laser illuminator
US8995485B2 (en) 2009-02-17 2015-03-31 Trilumina Corp. High brightness pulsed VCSEL sources
JP5522977B2 (ja) * 2009-06-09 2014-06-18 三菱電機株式会社 多波長半導体レーザ装置
GB2477458B (en) * 2009-06-09 2012-03-07 Mitsubishi Electric Corp Multi-wavelength semiconductor laser device
US8979338B2 (en) 2009-12-19 2015-03-17 Trilumina Corp. System for combining laser array outputs into a single beam carrying digital data
TWI446578B (zh) * 2010-09-23 2014-07-21 Epistar Corp 發光元件及其製法
US11095365B2 (en) 2011-08-26 2021-08-17 Lumentum Operations Llc Wide-angle illuminator module
DE102012209266A1 (de) 2012-06-01 2013-12-05 Robert Bosch Gmbh Schaltungsanordnung und Herstellungsverfahren hierfür
US9510478B2 (en) * 2013-06-20 2016-11-29 Honeywell International Inc. Cooling device including etched lateral microchannels
JP2016081562A (ja) 2014-10-09 2016-05-16 ソニー株式会社 表示装置、表示装置の製造方法および電子機器
CN105720478A (zh) * 2016-04-26 2016-06-29 西安炬光科技股份有限公司 一种可替换芯片的传导冷却型半导体激光器及其制备方法
US11025031B2 (en) 2016-11-29 2021-06-01 Leonardo Electronics Us Inc. Dual junction fiber-coupled laser diode and related methods
US11406004B2 (en) 2018-08-13 2022-08-02 Leonardo Electronics Us Inc. Use of metal-core printed circuit board (PCB) for generation of ultra-narrow, high-current pulse driver
DE102019121924A1 (de) 2018-08-14 2020-02-20 Lasertel, Inc. Laserbaugruppe und zugehörige verfahren
US11296481B2 (en) 2019-01-09 2022-04-05 Leonardo Electronics Us Inc. Divergence reshaping array
US11752571B1 (en) 2019-06-07 2023-09-12 Leonardo Electronics Us Inc. Coherent beam coupler

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1597707A (en) * 1978-03-08 1981-09-09 Aei Semiconductors Ltd Electronic component assemblies
JPS5885368U (ja) * 1981-12-04 1983-06-09 沖電気工業株式会社 レ−ザダイオ−ドアレイ装置
US4881237A (en) * 1988-08-26 1989-11-14 Massachusetts Institute Of Technology Hybrid two-dimensional surface-emitting laser arrays
JPH0323688A (ja) * 1989-06-21 1991-01-31 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
NL9000161A (nl) * 1990-01-23 1991-08-16 Koninkl Philips Electronics Nv Halfgeleiderinrichting bevattende een drager en werkwijze voor het vervaardigen van de drager.
US5128951A (en) * 1991-03-04 1992-07-07 Karpinski Arthur A Laser diode array and method of fabrication thereof
US5349210A (en) * 1993-02-02 1994-09-20 Motorola, Inc. Optical reading head with angled array
JPH0851247A (ja) * 1994-08-05 1996-02-20 Mitsubishi Electric Corp 集積型半導体レーザ装置の製造方法，及び集積型半導体レーザ装置
US5898211A (en) * 1996-04-30 1999-04-27 Cutting Edge Optronics, Inc. Laser diode package with heat sink
US5828683A (en) * 1997-04-21 1998-10-27 The Regents Of The University Of California High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array

Also Published As

Publication number Publication date
US5930279A (en) 1999-07-27
RU2130221C1 (ru) 1999-05-10
EP0803949A3 (de) 1998-03-04
DE69706468D1 (de) 2001-10-11
EP0803949A2 (de) 1997-10-29
EP0803949B1 (de) 2001-09-05
JPH1065267A (ja) 1998-03-06
JP3828237B2 (ja) 2006-10-04

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Legal Events

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