DE69704586T2 - Verschlüsse mit unabhängigen Regelungen und Blenden mit verstellbaren Öffnungen zur schiefen Beleuchtung - Google Patents

Verschlüsse mit unabhängigen Regelungen und Blenden mit verstellbaren Öffnungen zur schiefen Beleuchtung

Info

Publication number
DE69704586T2
DE69704586T2 DE69704586T DE69704586T DE69704586T2 DE 69704586 T2 DE69704586 T2 DE 69704586T2 DE 69704586 T DE69704586 T DE 69704586T DE 69704586 T DE69704586 T DE 69704586T DE 69704586 T2 DE69704586 T2 DE 69704586T2
Authority
DE
Germany
Prior art keywords
closures
panels
independent controls
adjustable openings
oblique lighting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69704586T
Other languages
English (en)
Other versions
DE69704586D1 (de
Inventor
Bernhard L Poschenrieder
Takashi Sato
Tsukasa Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Toshiba Corp
Original Assignee
Infineon Technologies AG
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG, Toshiba Corp filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE69704586D1 publication Critical patent/DE69704586D1/de
Publication of DE69704586T2 publication Critical patent/DE69704586T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69704586T 1996-03-04 1997-02-20 Verschlüsse mit unabhängigen Regelungen und Blenden mit verstellbaren Öffnungen zur schiefen Beleuchtung Expired - Fee Related DE69704586T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/610,770 US5712698A (en) 1996-03-04 1996-03-04 Independently controllable shutters and variable area apertures for off axis illumination

Publications (2)

Publication Number Publication Date
DE69704586D1 DE69704586D1 (de) 2001-05-23
DE69704586T2 true DE69704586T2 (de) 2001-08-23

Family

ID=24446350

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69704586T Expired - Fee Related DE69704586T2 (de) 1996-03-04 1997-02-20 Verschlüsse mit unabhängigen Regelungen und Blenden mit verstellbaren Öffnungen zur schiefen Beleuchtung

Country Status (4)

Country Link
US (1) US5712698A (de)
EP (1) EP0794462B1 (de)
JP (1) JPH09325501A (de)
DE (1) DE69704586T2 (de)

Cited By (1)

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DE102010042351A1 (de) * 2010-10-12 2012-04-12 Leica Microsystems Cms Gmbh Mikroskopbeleuchtungssystem, Mikroskop und Verfahren zur schrägen Auflichtbeleuchtung

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US6014202A (en) * 1997-09-16 2000-01-11 Polaroid Corporation Optical system for transmitting a graphical image
KR100250152B1 (ko) * 1997-11-15 2000-03-15 유무성 노광장치
JPH11271619A (ja) * 1998-03-19 1999-10-08 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
KR20010042098A (ko) * 1998-03-24 2001-05-25 오노 시게오 조명 장치, 노광 방법 및 장치와 디바이스 제조 방법
DE69931690T2 (de) * 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographischer Apparat
EP0949541B1 (de) * 1998-04-08 2006-06-07 ASML Netherlands B.V. Lithographischer Apparat
US6268907B1 (en) * 1998-05-13 2001-07-31 International Business Machines Corporation Elimination of standing waves in photoresist
US6215578B1 (en) 1998-09-17 2001-04-10 Vanguard International Semiconductor Corporation Electronically switchable off-axis illumination blade for stepper illumination system
US6563567B1 (en) * 1998-12-17 2003-05-13 Nikon Corporation Method and apparatus for illuminating a surface using a projection imaging apparatus
TW587199B (en) 1999-09-29 2004-05-11 Asml Netherlands Bv Lithographic method and apparatus
US6476905B1 (en) * 2000-01-20 2002-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Step and scan exposure system equipped with a plurality of attenuator blades for exposure control
US6744493B1 (en) * 2000-07-05 2004-06-01 Euv Llc In-vacuum exposure shutter
DE10043315C1 (de) 2000-09-02 2002-06-20 Zeiss Carl Projektionsbelichtungsanlage
US6611387B1 (en) * 2000-09-29 2003-08-26 Intel Corporation Adjustment of the partial coherence of the light energy in an imaging system
GB0214431D0 (en) * 2002-06-21 2002-07-31 Wynne Willson Gottelier Ltd Light beam shaping apparatus
JP2004063988A (ja) * 2002-07-31 2004-02-26 Canon Inc 照明光学系、当該照明光学系を有する露光装置及びデバイス製造方法
US7423730B2 (en) * 2003-05-28 2008-09-09 Asml Netherlands B.V. Lithographic apparatus
KR100598095B1 (ko) * 2003-07-10 2006-07-07 삼성전자주식회사 노광 장치
TWI240852B (en) * 2004-01-08 2005-10-01 Powerchip Semiconductor Corp Photolithograph system with variable shutter and method of using the same
US7046339B2 (en) * 2004-03-05 2006-05-16 Micron Technology, Inc. Optimized optical lithography illumination source for use during the manufacture of a semiconductor device
US20050225740A1 (en) * 2004-03-31 2005-10-13 Padlyar Sushil D Light source for photolithography
US7384725B2 (en) 2004-04-02 2008-06-10 Advanced Micro Devices, Inc. System and method for fabricating contact holes
US7253575B2 (en) * 2004-11-08 2007-08-07 Sutter Instrument Company Industrial optical shutter
WO2006058062A2 (en) * 2004-11-22 2006-06-01 Energex Systems, Inc. Blood irradiation system, associated devices and methods for irradiating blood
US7283205B2 (en) * 2005-01-19 2007-10-16 Micron Technology, Inc. Optimized optical lithography illumination source for use during the manufacture of a semiconductor device
US7511799B2 (en) * 2006-01-27 2009-03-31 Asml Netherlands B.V. Lithographic projection apparatus and a device manufacturing method
US20070211352A1 (en) * 2006-03-09 2007-09-13 Nikon Corporation Aperture changing apparatus and method
US7936447B2 (en) * 2006-05-08 2011-05-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080204683A1 (en) * 2007-02-26 2008-08-28 Asml Netherlands B.V. Lithographic apparatus and method
DE102009030502A1 (de) * 2009-06-24 2010-12-02 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie
DE102010009022B4 (de) 2010-02-22 2019-10-24 Carl Zeiss Smt Gmbh Beleuchtungssystem sowie Projektionsobjektiv einer Maskeninspektionsanlage
WO2012123000A1 (en) * 2011-03-15 2012-09-20 Carl Zeiss Smt Gmbh Method of operating a microlithographic projection exposure apparatus
DE102011085949A1 (de) * 2011-11-08 2013-01-03 Carl Zeiss Smt Gmbh Wärme ableitender und mechanisch stabilisierter Filter
DE102014115068A1 (de) * 2014-10-16 2016-04-21 Osram Opto Semiconductors Gmbh Beleuchtungsanordnung
CN110680354A (zh) * 2019-09-30 2020-01-14 中国人民解放军第四军医大学 一种x射线快门控制系统及方法、控制装置和应用

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US3980407A (en) * 1975-01-17 1976-09-14 Electromask, Inc. Shutter plate movement
DE7707291U1 (de) * 1977-03-09 1977-07-28 Bischl, Johann, 8000 Muenchen Vorrichtung zum abblenden einer lichtquelle
US4450578A (en) * 1982-03-03 1984-05-22 The United States Of America As Represented By The United States Department Of Energy Variable aperture collimator for high energy radiation
US4458303A (en) * 1982-05-24 1984-07-03 Berns Michael S Light beam concentrating, intensifying and filtering device
JPS5928337A (ja) * 1982-08-09 1984-02-15 Hitachi Ltd プロジエクシヨンアライナ
US4816876A (en) * 1985-11-27 1989-03-28 Pryor Paul L Contrast control for lens
JP2805220B2 (ja) * 1989-09-21 1998-09-30 キヤノン株式会社 露光装置
US5053934A (en) * 1990-02-09 1991-10-01 Krebs Juergen Optical arrangement for high-powered diaprojectors
JP2995820B2 (ja) * 1990-08-21 1999-12-27 株式会社ニコン 露光方法及び方法，並びにデバイス製造方法
JP2830492B2 (ja) * 1991-03-06 1998-12-02 株式会社ニコン 投影露光装置及び投影露光方法
US5264898A (en) * 1991-08-29 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Projection exposure apparatus
US5329336A (en) * 1992-07-06 1994-07-12 Nikon Corporation Exposure method and apparatus
DE29503859U1 (de) * 1994-03-07 1995-05-04 Hyundai Electronics Ind Vorgefertigte, modifizierte Beleuchtungsvorrichtung zur Herstellung feiner Muster in einer Halbleitervorrichtung

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010042351A1 (de) * 2010-10-12 2012-04-12 Leica Microsystems Cms Gmbh Mikroskopbeleuchtungssystem, Mikroskop und Verfahren zur schrägen Auflichtbeleuchtung
DE102010042351B4 (de) * 2010-10-12 2014-02-13 Leica Microsystems Cms Gmbh Mikroskopbeleuchtungssystem, Mikroskop und Verfahren zur schrägen Auflichtbeleuchtung
US9250432B2 (en) 2010-10-12 2016-02-02 Leica Microsystems Cms Gmbh Microscope illumination system, microscope and oblique incident illumination method

Also Published As

Publication number Publication date
DE69704586D1 (de) 2001-05-23
EP0794462B1 (de) 2001-04-18
US5712698A (en) 1998-01-27
EP0794462A2 (de) 1997-09-10
JPH09325501A (ja) 1997-12-16
EP0794462A3 (de) 1998-05-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee