DE69703768T2 - Vielfachhalbleiterlaseranordnung - Google Patents

Vielfachhalbleiterlaseranordnung

Info

Publication number
DE69703768T2
DE69703768T2 DE69703768T DE69703768T DE69703768T2 DE 69703768 T2 DE69703768 T2 DE 69703768T2 DE 69703768 T DE69703768 T DE 69703768T DE 69703768 T DE69703768 T DE 69703768T DE 69703768 T2 DE69703768 T2 DE 69703768T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser array
multiple semiconductor
array
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69703768T
Other languages
English (en)
Other versions
DE69703768D1 (de
Inventor
Masayuki Iwase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of DE69703768D1 publication Critical patent/DE69703768D1/de
Application granted granted Critical
Publication of DE69703768T2 publication Critical patent/DE69703768T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69703768T 1996-08-06 1997-08-05 Vielfachhalbleiterlaseranordnung Expired - Fee Related DE69703768T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8223110A JPH1051078A (ja) 1996-08-06 1996-08-06 半導体レーザアレイ及びその製造方法

Publications (2)

Publication Number Publication Date
DE69703768D1 DE69703768D1 (de) 2001-02-01
DE69703768T2 true DE69703768T2 (de) 2001-08-02

Family

ID=16792989

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69703768T Expired - Fee Related DE69703768T2 (de) 1996-08-06 1997-08-05 Vielfachhalbleiterlaseranordnung

Country Status (5)

Country Link
US (1) US6034982A (de)
EP (1) EP0823760B1 (de)
JP (1) JPH1051078A (de)
CN (1) CN1174429A (de)
DE (1) DE69703768T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156379A (ja) * 1999-11-29 2001-06-08 Canon Inc 半導体レーザアレイおよび光走査装置
JP2001267675A (ja) * 2000-03-14 2001-09-28 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
GB2414214B (en) * 2004-05-19 2008-01-09 Intense Photonics Ltd Printing with laser activation
US7421045B2 (en) * 2005-03-18 2008-09-02 Interdigital Technology Corporation Method and apparatus for computing SIR of time varying signals in a wireless communication system
JP2008244440A (ja) * 2007-02-13 2008-10-09 Matsushita Electric Ind Co Ltd 半導体レーザ装置及び画像表示装置
JP4901909B2 (ja) * 2009-05-19 2012-03-21 シャープ株式会社 光学部品及びその製造方法
JP5597029B2 (ja) * 2010-05-27 2014-10-01 住友電気工業株式会社 波長可変半導体レーザ
CN102074890B (zh) * 2010-12-14 2012-05-09 山东华光光电子有限公司 一种管芯串联激光器封装方法
KR101327243B1 (ko) * 2011-12-27 2013-11-12 전자부품연구원 바형태의 레이저 다이오드 어레이를 개별 구동하기 위한 ｐ형 서브마운트 및 이를 포함하는 반도체 패키지
JP6597037B2 (ja) 2015-08-06 2019-10-30 住友電気工業株式会社 量子カスケードレーザデバイス
JP6720506B2 (ja) * 2015-11-16 2020-07-08 住友電気工業株式会社 量子カスケードレーザデバイス

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3794883A (en) * 1973-02-01 1974-02-26 E Bylander Process for fabricating ge:hg infrared detector arrays and resulting article of manufacture
US4079404A (en) * 1976-12-30 1978-03-14 International Business Machines Corporation Self-aligning support structure for optical components
JPS6331104A (ja) * 1986-07-24 1988-02-09 株式会社村田製作所 積層セラミツクコンデンサの製造方法
JPH087288B2 (ja) * 1986-11-20 1996-01-29 日本電信電話株式会社 ハイブリッド光集積回路の製造方法
JPH0828551B2 (ja) * 1988-05-07 1996-03-21 三菱電機株式会社 アレイレーザ
JP2780981B2 (ja) * 1988-06-27 1998-07-30 三菱電機株式会社 多点発光型半導体レーザ及びその製造方法
JPH03196588A (ja) * 1989-12-26 1991-08-28 Sony Corp 半導体レーザダイオード
EP0457344A3 (en) * 1990-05-18 1992-03-11 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
JP2622029B2 (ja) * 1990-05-18 1997-06-18 株式会社東芝 半導体発光装置
US5077878A (en) * 1990-07-11 1992-01-07 Gte Laboratories Incorporated Method and device for passive alignment of diode lasers and optical fibers

Also Published As

Publication number Publication date
EP0823760A3 (de) 1998-07-15
CN1174429A (zh) 1998-02-25
JPH1051078A (ja) 1998-02-20
US6034982A (en) 2000-03-07
DE69703768D1 (de) 2001-02-01
EP0823760B1 (de) 2000-12-27
EP0823760A2 (de) 1998-02-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee