DE69704544T2 - Optischer Halbleiterverstärker - Google Patents

Optischer Halbleiterverstärker

Info

Publication number
DE69704544T2
DE69704544T2 DE69704544T DE69704544T DE69704544T2 DE 69704544 T2 DE69704544 T2 DE 69704544T2 DE 69704544 T DE69704544 T DE 69704544T DE 69704544 T DE69704544 T DE 69704544T DE 69704544 T2 DE69704544 T2 DE 69704544T2
Authority
DE
Germany
Prior art keywords
optical semiconductor
semiconductor amplifier
amplifier
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69704544T
Other languages
English (en)
Other versions
DE69704544D1 (de
Inventor
Shotaro Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69704544D1 publication Critical patent/DE69704544D1/de
Application granted granted Critical
Publication of DE69704544T2 publication Critical patent/DE69704544T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
DE69704544T 1996-12-26 1997-12-19 Optischer Halbleiterverstärker Expired - Fee Related DE69704544T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34783596 1996-12-26

Publications (2)

Publication Number Publication Date
DE69704544D1 DE69704544D1 (de) 2001-05-17
DE69704544T2 true DE69704544T2 (de) 2001-11-29

Family

ID=18392933

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69704544T Expired - Fee Related DE69704544T2 (de) 1996-12-26 1997-12-19 Optischer Halbleiterverstärker

Country Status (3)

Country Link
US (1) US6052222A (de)
EP (1) EP0851548B1 (de)
DE (1) DE69704544T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3479220B2 (ja) 1998-07-03 2003-12-15 日本電気株式会社 光集積モジュール
EP1130709A2 (de) * 2000-01-20 2001-09-05 Cyoptics (Israel) Ltd. Optische Strahlungsüberwachung in Halbleitervorrichtungen
US6366716B1 (en) * 2000-06-15 2002-04-02 Nortel Networks Limited Optical switching device
SE521023C2 (sv) 2000-07-07 2003-09-23 Ericsson Telefon Ab L M Optisk anordning samt framställning därav
US6423963B1 (en) 2000-07-26 2002-07-23 Onetta, Inc. Safety latch for Raman amplifiers
US6456429B1 (en) 2000-11-15 2002-09-24 Onetta, Inc. Double-pass optical amplifier
US6433921B1 (en) 2001-01-12 2002-08-13 Onetta, Inc. Multiwavelength pumps for raman amplifier systems
US6731424B1 (en) 2001-03-15 2004-05-04 Onetta, Inc. Dynamic gain flattening in an optical communication system
JP3991615B2 (ja) * 2001-04-24 2007-10-17 日本電気株式会社 半導体光アンプおよび半導体レーザ
US6583926B1 (en) 2001-08-21 2003-06-24 Onetta, Inc. Optical amplifiers with age-based pump current limiters
US6731427B1 (en) 2001-09-06 2004-05-04 Onetta, Inc. Semiconductor optical amplifier systems
US6714344B2 (en) 2001-10-04 2004-03-30 Gazillion Bits, Inc. Reducing output noise in a ballast-powered semiconductor optical amplifier
US6597497B2 (en) 2001-10-04 2003-07-22 Shih-Yuan Wang Semiconductor optical amplifier with transverse laser cavity intersecting optical signal path and method of fabrication thereof
US6836357B2 (en) 2001-10-04 2004-12-28 Gazillion Bits, Inc. Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof
US7116851B2 (en) * 2001-10-09 2006-10-03 Infinera Corporation Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance
KR100566255B1 (ko) * 2004-02-19 2006-03-29 삼성전자주식회사 반사형 반도체 광 증폭기
TWI251393B (en) * 2004-03-31 2006-03-11 Nec Corp Tunable laser
US7402882B2 (en) * 2004-08-23 2008-07-22 Eastman Kodak Company Methods to eliminate amplifier glowing artifact in digital images captured by an image sensor
US20080018988A1 (en) * 2006-07-24 2008-01-24 Andrew Davidson Light source with tailored output spectrum
US8260096B2 (en) * 2009-05-15 2012-09-04 Infinera Corporation Photonic integrated circuit having bent active components
EP2521227B1 (de) 2011-05-04 2016-09-07 Alcatel Lucent Optische Halbleiterverstärkervorrichtung und optischer Matrixschalter
US8902945B1 (en) * 2012-08-06 2014-12-02 Emcore Corporation Semiconductor laser gain device with mode filter
US10408999B2 (en) 2014-05-09 2019-09-10 National University Corporation University Of Fukui Multiplexer
JP6807561B2 (ja) 2014-05-09 2021-01-13 国立大学法人福井大学 合波器、この合波器を用いた画像投影装置及び画像投影システム
US9739938B2 (en) 2015-12-09 2017-08-22 Elenion Technologies, Llc Shielded photonic integrated circuit
CN107272116B (zh) * 2017-08-16 2024-01-05 深圳大学 一种回音壁模式谐振器及其制备方法
WO2020181938A1 (zh) * 2019-03-14 2020-09-17 青岛海信宽带多媒体技术有限公司 一种光模块
US20220373737A1 (en) * 2019-07-09 2022-11-24 Nippon Telegraph And Telephone Corporation Optical Multiplexing Circuit
CN115864134B (zh) * 2023-02-17 2023-04-25 福建慧芯激光科技有限公司 一种多弯波导dfb激光器芯片

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0497206A (ja) * 1990-08-10 1992-03-30 Anritsu Corp 半導体光素子
JPH04159513A (ja) * 1990-10-24 1992-06-02 Nec Corp モード選択光素子
JP3070016B2 (ja) * 1990-12-07 2000-07-24 日本電信電話株式会社 光導波路デバイス
US5088105A (en) * 1991-03-26 1992-02-11 Spectra Diode Laboratories, Inc. Optical amplifier with folded light path and laser-amplifier combination

Also Published As

Publication number Publication date
EP0851548A1 (de) 1998-07-01
DE69704544D1 (de) 2001-05-17
US6052222A (en) 2000-04-18
EP0851548B1 (de) 2001-04-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee